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248 résultats
Analytical Study of Performances of Bilayer and Monolayer Graphene FETs based on Physical MechanismsGraphene week, May 2014, Toulouse, France. pp.1-3
Communication dans un congrès
hal-01002504v1
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TCAD Calibration of High-Speed Si/SiGe HBTs in 55-nm BiCMOSPriMe 2016, Oct 2016, Honolulu, United States. pp.113 - 119, ⟨10.1149/07508.0113ecst⟩
Communication dans un congrès
hal-01399104v1
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SiGe-based Nanowire HBT for THz ApplicationsIEEE Electron Devices Technology and Manufacturing (IEEE EDTM) Conference 2023, Mar 2023, SEOUL, South Korea
Communication dans un congrès
hal-04037313v1
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Collector-substrate modeling of SiGe HBTs up to THz range2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nov 2019, Nashville, France. pp.1-4, ⟨10.1109/BCICTS45179.2019.8972745⟩
Communication dans un congrès
hal-02532693v1
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Characterization of Sub-THz and THz TransistorsIEEE BEE WEEK 2019, Dec 2019, Bordeaux, France. 2019
Poster de conférence
hal-02396565v1
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Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model DevelopmentElectronics, 2020, 9 (9), pp.1333. ⟨10.3390/electronics9091333⟩
Article dans une revue
hal-02920341v1
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Guideline for test-structures placement for on-Wafer calibration in sub-THz Si device characterization2021 IEEE/MTT-S International Microwave Symposium - IMS 2021, Jun 2021, Atlanta, United States. pp.511-514, ⟨10.1109/IMS19712.2021.9574928⟩
Communication dans un congrès
hal-03851109v1
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Optically-Gated CNTFET compact model including source and drain Schottky barrier5th Conference on Design and Technology of Integrated Systems in Nanoscale Era, Mar 2010, Hammamet, Tunisia. pp.1
Communication dans un congrès
hal-00584845v1
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Limitations of on-wafer calibration and de-embedding methods in the sub-THz rangeECC 2013 conference, Nov 2013, Sanya, China
Communication dans un congrès
hal-00909399v1
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A Scalable Model for Temperature Dependent Thermal Resistance of SiGe HBTsIEEE Bipolar / BiCMOS Circuits and Technology Meeting, Sep 2013, Bordeaux, France
Communication dans un congrès
hal-00905673v1
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Graphene Transistor-Based Active Balun ArchitecturesIEEE Transactions on Electron Devices, 2015, 62 (9), ⟨10.1109/TED.2015.2457496⟩
Article dans une revue
hal-01235955v1
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Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature VariationSolid State Device Research Conference (ESSDERC), 2014, 44th European, Sep 2014, Venise, Italy. ⟨10.1109/ESSDERC.2014.6948821⟩
Communication dans un congrès
hal-01090864v1
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2.5GHz integrated graphene RF power amplifier on SiC substrateSolid-State Electronics, 2016, ⟨10.1016/j.sse.2016.10.002⟩
Article dans une revue
hal-01399069v1
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Prospects for Complementary SiGeC BiCMOS on Thin-Film SOIECS Transactions, Oct 2006, Cancun, Mexico. pp. 355-363
Communication dans un congrès
hal-00181206v1
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Modélisation thermique des TBH SiGe destinés à des applications radiofréquencesConférence Internationale Sciences Electroniques, Technologies de l'Information et des Télécommunications, 2003, Tunisie. pp.1
Communication dans un congrès
hal-00181988v1
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A Hicum SOI extension5th European HICUM Workshop, 2005, France
Communication dans un congrès
hal-00181989v1
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Analytic Estimation of Thermal Resistance in HBTsIEEE Transactions on Electron Devices, 2016, 63 (8), pp.2994 - 2998. ⟨10.1109/TED.2016.2572959⟩
Article dans une revue
hal-01399079v1
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Compact Model of a Dual Gate CNTFET: Description and Circuit Application8th IEEE Conference on Nanotechnology, Aug 2008, Arlington, TEXAS, USA, United States. pp.Page(s):388 - 389, ⟨10.1109/TED.2007.902719⟩
Communication dans un congrès
hal-00319955v1
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CNTFET modeling and reconfigurable logic circuit designIEEE Transactions on Circuits and Systems, 2007, 54 (11), pp.2365-2379. ⟨10.1109/TCSI.2007.907835⟩
Article dans une revue
hal-00187137v1
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Challenges and potential of new approaches for reliability assessment of nanotechnologiesComptes Rendus de l'Academie des Sciences. Série IV, Physique, Astronomie, 2008, pp.95-109
Article dans une revue
hal-00266387v1
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TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layerMaterials Science in Semiconductor Processing, 2010, 13 (5-6), pp. 344-348. ⟨10.1016/j.mssp.2011.03.002⟩
Article dans une revue
istex
hal-00671678v1
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Characterization of self-heating in Si-Ge HBTs with pulse, DC and AC measurementsSolid-State Electronics, 2012, 76, pp.13-18. ⟨10.1016/j.sse.2012.04.039⟩
Article dans une revue
istex
hal-00978797v1
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A compact model for SiGe HBT on thin film SOIIEEE Transactions on Electron Devices, 2006, 53 (2), pp.296-303
Article dans une revue
hal-00181969v1
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Toward compact model of Optical-Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET)JNTE 08, French Symposium on Emerging Technologies for micro-nanofabrication, Nov 2008, Toulouse, France
Communication dans un congrès
hal-00337487v1
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Implementation of Electron–Phonon Scattering in a CNTFET Compact ModelIEEE Transactions on Electron Devices, 2009, 56 (6), pp.1184-1190
Article dans une revue
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Pulsed radio frequency characterisation on 28 nm complementary metal–oxide semiconductor technologyElectronics Letters, 2015, 51 (1), pp.2. ⟨10.1049/el.2014.3634⟩
Article dans une revue
hal-01100656v1
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Nouvelles structures 3D pour calibrage TRL sur puces adaptées à la mesure de paramètres S très hautes fréquencesJournées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM2015), May 2015, Talence, France
Communication dans un congrès
hal-01163604v1
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Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applicationsIEEE Transactions on Electron Devices, 2011, pp.195-205. ⟨10.1109/TED.2010.2084351⟩
Article dans une revue
hal-00584876v1
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Extracting the temperature dependence of thermal resistance from temperature-controlled DC measurements of sige HBTs2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2017, Miami, France. ⟨10.1109/BCTM.2017.8112919⟩
Communication dans un congrès
hal-01695326v1
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A Test Structure Set for on-wafer 3D-TRL calibration2016 International Conference on Microelectronic Test Structures (ICMTS), Mar 2016, Yokohama, Japan
Communication dans un congrès
hal-01399900v1
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