Number of documents

67

CV


Journal articles49 documents

  • J. Hernández-Saz, M. Herrera, J. Pizarro, M. Gonzalez, J. Abell, et al.. Effect of the thermal annealing and the nominal composition in the elemental distribution of InxAl1-xAsySb1-y for triple junction solar cells. Journal of Alloys and Compounds, Elsevier, 2019, 792, pp.1021-1027. ⟨10.1016/j.jallcom.2019.04.119⟩. ⟨hal-02108138⟩
  • Rémi Demoulin, Manuel Roussel, Sébastien Duguay, Dominique Muller, Daniel Mathiot, et al.. Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography. Journal of Physical Chemistry C, American Chemical Society, 2019, 123 (12), pp.7381-7389. ⟨10.1021/acs.jpcc.8b08620⟩. ⟨hal-02082140⟩
  • Mohit Raghuwanshi, Arantxa Vilalta-Clemente, Celia Castro, S. Duguay, Emmanuel Cadel, et al.. Influence of RbF post deposition treatment on heterojunction and grain boundaries in high efficient (21.1%) Cu(In,Ga)Se2 solar cells. Nano Energy, Elsevier, 2019, 60, pp.103-110. ⟨10.1016/j.nanoen.2019.03.028⟩. ⟨hal-02108142⟩
  • Simona Moldovan, Edy Azrak, Wanghua Chen, Shiwen Gao, Sébastien Duguay, et al.. Assessment of High Sn Incorporation in Ge NanoWires Synthesized via In Plane Solid-Liquid-Solid Mechanism by In-Situ TEM. Microscopy and Microanalysis, Cambridge University Press (CUP), 2018, 24 (S1), pp.306-307. ⟨10.1017/S1431927618002027⟩. ⟨hal-02183481⟩
  • J. Hernández-Saz, M. Herrera, J. Pizarro, P.L. Galindo, M. Gonzalez, et al.. Influence of the growth temperature on the composition distribution at sub-nm scale of InAlAsSb for solar cells. Journal of Alloys and Compounds, Elsevier, 2018, 763, pp.1005-1011. ⟨10.1016/j.jallcom.2018.05.333⟩. ⟨hal-02108144⟩
  • Edy Azrak, Wanghua Chen, Simona Moldovan, Shiwen Gao, S. Duguay, et al.. Growth of In-Plane Ge 1– x Sn x Nanowires with 22 at. % Sn Using a Solid–Liquid–Solid Mechanism. Journal of Physical Chemistry C, American Chemical Society, 2018, 122 (45), pp.26236-26242. ⟨10.1021/acs.jpcc.8b07142⟩. ⟨hal-02108143⟩
  • Arantxa Vilalta-Clemente, Mohit Raghuwanshi, Sébastien Duguay, Celia Castro, Emmanuel Cadel, et al.. Rubidium distribution at atomic scale in high efficient Cu(In,Ga)Se2thin-film solar cells. Applied Physics Letters, American Institute of Physics, 2018, 112 (10), pp.103105. ⟨10.1063/1.5020805⟩. ⟨hal-01929133⟩
  • J. Barnes, A. Grenier, I. Mouton, S. Barraud, G. Audoit, et al.. Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives. Scripta Materialia, Elsevier, 2018, 148, pp.91 - 97. ⟨10.1016/j.scriptamat.2017.05.012⟩. ⟨hal-01765929⟩
  • Mohit Raghuwanshi, Emmanuel Cadel, Sébastien Duguay, Ludovic Arzel, Nicolas Barreau, et al.. Influence of Na on grain boundary and properties of Cu(In,Ga)Se 2 solar cells. Progress in Photovoltaics: Research and Applications, 2017, 25 (5), pp.367 - 375. ⟨10.1002/pip.2869⟩. ⟨hal-01720935⟩
  • Nicolas Rolland, François Vurpillot, Sébastien Duguay, Baishakhi Mazumder, James Speck, et al.. New Atom Probe Tomography Reconstruction Algorithm for Multilayered Samples: Beyond the Hemispherical Constraint. Microscopy and Microanalysis, Cambridge University Press (CUP), 2017, 23 (02), pp.247 - 254. ⟨10.1017/s1431927617000253⟩. ⟨hal-01766098⟩
  • F. Vurpillot, N. Rolland, R. Estivill, S. Duguay, D. Blavette. Accuracy of analyses of microelectronics nanostructures in atom probe tomography. Semiconductor Science and Technology, 2016, 31 (7), ⟨10.1088/0268-1242/31/7/074002⟩. ⟨hal-01928850⟩
  • J. Hernández-Saz, M. Herrera, S.I. Molina, C.R. Stanley, S. Duguay. Atom Probe Tomography Analysis of InAlGaAs Capped InAs/GaAs Stacked Quantum Dots with Variable Barrier Layer Thickness. Acta Materialia, 2016, 103, pp.651-657. ⟨10.1016/j.actamat.2015.10.048⟩. ⟨hal-01954206⟩
  • J Hernández-Saz, M Herrera, F J Delgado, S Duguay, T Philippe, et al.. Atom-Scale Compositional Distribution in InAlAsSb-Based Triple Junction Solar Cells by Atom Probe Tomography. Nanotechnology, 2016, 27 (30), pp.305402. ⟨10.1088/0957-4484/27/30/305402⟩. ⟨hal-01954209⟩
  • D. Blavette, S. Duguay. Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography. Journal of Applied Physics, American Institute of Physics, 2016, 119 (18), ⟨10.1063/1.4948238⟩. ⟨hal-01928847⟩
  • N. Rolland, D. J. Larson, B. P. Geiser, S. Duguay, F. Vurpillot, et al.. An analytical model accounting for tip shape evolution during atom probe analysis of heterogeneous materials. Ultramicroscopy, 2015, 159, pp.195--201. ⟨10.1016/j.ultramic.2015.03.010⟩. ⟨hal-01928854⟩
  • Anna Maria Beltrán, Sébastien Duguay, Christian Strenger, Anton J Bauer, Fuccio Cristiano, et al.. Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Solid State Communications, 2015, 221, pp.28-32. ⟨10.1016/j.ssc.2015.08.017⟩. ⟨hal-01720451⟩
  • Nicolas Rolland, François Vurpillot, Sébastien Duguay, Didier Blavette. A Meshless Algorithm to Model Field Evaporation in Atom Probe Tomography. Microscopy and Microanalysis, Cambridge University Press (CUP), 2015, 21 (6), pp.1649-1656. ⟨10.1017/S1431927615015184⟩. ⟨hal-02107013⟩
  • N. Fernández-Delgado, M. Herrera, S.I. Molina, Celia Castro, S. Duguay, et al.. Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells. Applied Surface Science, Elsevier, 2015, 359, pp.676-678. ⟨10.1016/j.apsusc.2015.10.161⟩. ⟨hal-02111986⟩
  • Robert Estivill, Adeline Grenier, Sébastien Duguay, François Vurpillot, Tanguy Terlier, et al.. Quantitative investigation of SiGeC layers using atom probe tomography. Ultramicroscopy, 2015, 150, pp.23--29. ⟨10.1016/j.ultramic.2014.11.020⟩. ⟨hal-01928855⟩
  • Mohit Raghuwanshi, Adeline Lanterne, Jérôme Le Perchec, Philippe Pareige, Emmanuel Cadel, et al.. Influence of boron clustering on the emitter quality of implanted silicon solar cells: An atom probe tomography study. Progress in Photovoltaics: Research and Applications, 2015, 23 (12), pp.1724--1733. ⟨10.1002/pip.2607⟩. ⟨hal-01929136⟩
  • Nicolas Rolland, François Vurpillot, Sébastien Duguay, Didier Blavette. Dynamic evolution and fracture of multilayer field emitters in atom probe tomography: a new interpretation. European Physical Journal: Applied Physics, EDP Sciences, 2015, 72 (2), pp.21001. ⟨10.1051/epjap/2015150233⟩. ⟨hal-02107622⟩
  • A. Grenier, S. Duguay, J. P. Barnes, R. Serra, N. Rolland, et al.. Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques. Applied Physics Letters, American Institute of Physics, 2015, 106 (21), ⟨10.1063/1.4921352⟩. ⟨hal-01928856⟩
  • J. Hernández-Saz, M. Herrera, S.I. Molina, C.R. Stanley, S. Duguay. 3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs. Scripta Materialia, Elsevier, 2015, 103, pp.73-76. ⟨10.1016/j.scriptamat.2015.03.013⟩. ⟨hal-02177759⟩
  • Robert Estivill, Adeline Grenier, Sébastien Duguay, François Vurpillot, Tanguy Terlier, et al.. Quantitative analysis of Si/SiGeC superlattices using atom probe tomography. Ultramicroscopy, Elsevier, 2015, 159, pp.223-231. ⟨10.1016/j.ultramic.2015.03.014⟩. ⟨hal-02107589⟩
  • Didier Blavette, Huiyuan Wang, Manon Bonvalet, Florian Hüe, Sébastien Duguay. Atom-probe tomography study of boron precipitation in highly implanted silicon. physica status solidi (a), Wiley, 2014, 211 (1), pp.126--130. ⟨10.1002/pssa.201300127⟩. ⟨hal-01928861⟩
  • Yang Qiu, Fuccio Cristiano, Karim Huet, Fulvio Mazzamuto, Giuseppe Fisicaro, et al.. Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon. Nano Letters, American Chemical Society, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩. ⟨hal-01659180⟩
  • A. Grenier, S. Duguay, J. P. Barnes, R. Serra, G. Haberfehlner, et al.. 3D analysis of advanced nano-devices using electron and atom probe tomography. Ultramicroscopy, 2014, 136, pp.185--192. ⟨10.1016/j.ultramic.2013.10.001⟩. ⟨hal-01929139⟩
  • Didier Blavette, Sébastien Duguay. Atom probe tomography in nanoelectronics. European Physical Journal: Applied Physics, EDP Sciences, 2014, 68 (1), pp.10101. ⟨10.1051/epjap/2014140060⟩. ⟨hal-01928859⟩
  • M. Raghuwanshi, E. Cadel, Philippe Pareige, S. Duguay, F. Couzinie-Devy, et al.. Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se2solar cells. Applied Physics Letters, American Institute of Physics, 2014, 105 (1), pp.013902. ⟨10.1063/1.4890001⟩. ⟨hal-01929138⟩
  • T. Philippe, S. Duguay, G. Grancher, D. Blavette. Point process statistics in atom probe tomography. Ultramicroscopy, 2013, 132, pp.114--120. ⟨10.1016/j.ultramic.2012.10.004⟩. ⟨hal-01928863⟩
  • R. Khelifi, D. Mathiot, Rajiv Gupta, D. Muller, M. Roussel, et al.. Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis. Applied Physics Letters, American Institute of Physics, 2013, 102, pp.013116_1-4. ⟨hal-00799830⟩
  • H. Y. Wang, T. Philippe, S. Duguay, D. Blavette. Temperature dependence of nucleation rate in a binary solid solution. Philosophical Magazine Letters, 2012, 92 (12), pp.718--725. ⟨10.1080/09500839.2012.725948⟩. ⟨hal-01928868⟩
  • G. Da Costa, H. Wang, S. Duguay, A. Bostel, D. Blavette, et al.. Advance in multi-hit detection and quantization in atom probe tomography. Review of Scientific Instruments, 2012, 83 (12), ⟨10.1063/1.4770120⟩. ⟨hal-01928866⟩
  • T. Philippe, S. Duguay, D. Mathiot, D. Blavette. Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation. Journal of Applied Physics, American Institute of Physics, 2011, 109, pp. 023501_1-4. ⟨hal-00597120⟩
  • S. Duguay, A. Colin, D. Mathiot, Pascal Morin, D. Blavette. Atomic-scale redistribution of dopants in polycrystalline silicon layers. Applied Physics, Springer-Verlag, 2010, 108, pp.034911_1-7. ⟨hal-00526353⟩
  • T. Philippe, O. Cojocaru-Mirédin, S. Duguay, D. Blavette. Clustering and nearest neighbour distances in atom probe tomography: The influence of the interfaces. Journal of Microscopy, 2010, 239 (1), pp.72--77. ⟨10.1111/j.1365-2818.2009.03359.x⟩. ⟨hal-01928875⟩
  • T. Philippe, S. Duguay, D. Blavette. Clustering and pair correlation function in atom probe tomography. Ultramicroscopy, 2010, 110 (7), pp.862--865. ⟨10.1016/j.ultramic.2010.03.004⟩. ⟨hal-01928874⟩
  • T. Philippe, S. Duguay, J.J. Grob, D. Mathiot, D. Blavette. Atomic-scale study of the role of carbon on boron clustering. Thin Solid Films, Elsevier, 2010, 518, pp. 2406-2408. ⟨10.1016/j.tsf.2009.08.022⟩. ⟨hal-00464139⟩
  • S. Duguay, M. Ngamo, P. Fazzini, Fuccio Cristiano, K. Daoud, et al.. Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate. Thin Solid Films, Elsevier, 2010, 518 (9), pp.2398 - 2401. ⟨10.1016/j.tsf.2009.09.159⟩. ⟨hal-01922657⟩
  • S. Duguay, T. Philippe, Fuccio Cristiano, D. Blavette. Direct imaging of boron segregation to extended defects in silicon. Applied Physics Letters, American Institute of Physics, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩. ⟨hal-01922903⟩
  • Emmanuel Cadel, Fraņois Vurpillot, Rodrigue Lardé, Sébastien Duguay, Bernard Deconihout. Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors. Journal of Applied Physics, American Institute of Physics, 2009, 106 (4), pp.044908. ⟨10.1063/1.3186617⟩. ⟨hal-01929144⟩
  • S. Duguay, F. Vurpillot, T. Philippe, E. Cadel, R. Lardé, et al.. Evidence of atomic-scale arsenic clustering in highly doped silicon. Journal of Applied Physics, American Institute of Physics, 2009, 106 (10), pp.106102. ⟨10.1063/1.3257178⟩. ⟨hal-01929143⟩
  • T. Philippe, F. de Geuser, S. Duguay, W. Lefebvre, O. Cojocaru-Mirédin, et al.. Clustering and nearest neighbour distances in atom-probe tomography. Ultramicroscopy, Elsevier, 2009, 109, pp.1304-1309. ⟨10.1016/j.ultramic.2009.06.007⟩. ⟨hal-00457542⟩
  • B. Pivac, P. Dubcek, I. Capan, H. Zorc, S. Bernstorff, et al.. Structural analysis of annealed amorphous SiO/SiO2 superlattice. Thin Solid Films, Elsevier, 2008, 516, pp. 6796-6799. ⟨hal-00300610⟩
  • S. Duguay, S. Burignat, P. Kern, J.J. Grob, A. Souifi, et al.. Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers. Semicond. Sci. Technol., 2007, 22, pp. 837-842. ⟨hal-00250270⟩
  • I. Kovacevic, P. Dubcek, S. Duguay, H. Zorc, N. Radic, et al.. Silicon nanoparticles formation in annealed SiO/SiO2 multilayers. Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2007, 38, pp. 50-53. ⟨hal-00349867⟩
  • M. Mansour, A. En Naciri, L. Johann, S. Duguay, J.J. Grob, et al.. Dielectric function of germanium nanocrystals between 0.6 and 6.5 eV by spectroscopic ellipsometry. Journal of Physics and Chemistry of Solids, Elsevier, 2006, 67, pp.1291-1294. ⟨hal-00207770⟩
  • S. Duguay, A. Slaoui, Grob J.J., M. Kanoun, S. Burignat, et al.. Structural properties of Ge-implanted SiO2 layers and related MOS memory effects. Mater. Sci. Eng. B, 2005, 124-125, pp.488-493. ⟨hal-00207848⟩
  • S. Duguay, J.J. Grob, A. Slaoui, Y. Le Gall, M. Amann-Liess. Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing. Journal of Applied Physics, American Institute of Physics, 2005, 97, pp.104330_1-5. ⟨hal-00134846⟩

Conference papers17 documents

  • Celia Castro, Mohit Raghuwanshi, Philippe Pareige, Sébastien Duguay, Emmanuel Cadel, et al.. Combining TEM and APT for a Better Understanding of Super High Efficiency Cu(In,Ga)Se2 Thin Film Solar Cells. European Microscopy Society Congress 2016, Dec 2016, Lyon, France. pp.914-915, ⟨10.1002/9783527808465.EMC2016.6800⟩. ⟨hal-01954234⟩
  • Didier Blavette, Isabelle Mouton, S. Duguay. Atom‐Probe Tomography and Nanosciences. European Microscopy Congress 2016: Proceedings, Aug 2016, Lyon, France. ⟨hal-02108167⟩
  • Fuccio Cristiano, Y. Qiu, Eléna Bedel-Pereira, Karim Huet, Fulvio Mazzamuto, et al.. Extended defects in ion-implanted si during nanosecond laser annealing. Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩. ⟨hal-01721156⟩
  • D. Mathiot, R. Khelifi, D. Muller, S. Duguay. Co-implantation: A simple way to grow doped Si nanocrystals embedded in SiO2. Material Research Society (MRS) Spring Meeting, Symposium on Nanoscale Materials Modification by Photon, Ion, and Electron Beams, Apr 2012, San Francisco, United States. pp.mrss12-1455-ii08-21. ⟨hal-00697568⟩
  • R. Khelifi, D. Mathiot, D. Muller, S. Duguay. Synthèse par faisceaux d'ion et caractérisation de nanocristaux de silicium dopés dans SiO SiO2. 13èmes Journées de la Matière Condensée (JMC13), Aug 2012, Montpellier, France. ⟨hal-00743238⟩
  • H. Wang, T. Philippe, J. Marcon, S. Duguay, D. Mathiot, et al.. Modeling of boron diffusion in silicon: Influence of precipitation. European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III, May 2012, Strasbourg, France. ⟨hal-00743292⟩
  • T. Philippe, S. Duguay, J.J. Grob, D. Mathiot, D. Blavette. Atomic-scale study of the role of carbon on boron clustering. European Material Research Society (E-MRS) Spring Conference, Symposium on Silicon and Germanium issues for future CMOS devices, Jun 2009, Strasbourg, France. pp.2406-2408. ⟨hal-00409615⟩
  • F. Vurpillot, M. Gruber, S. Duguay, E. Cadel, B. Deconihout. Modeling artifacts in the analysis of test semiconductor structures in atom probe tomography. AIP Conference Proceedings, 2009, Unknown, Unknown Region. pp.175--180, ⟨10.1063/1.3251216⟩. ⟨hal-01929146⟩
  • B. Pivac, P. Dubcek, I. Capan, H. Zorc, S. Bernstorff, et al.. Structural analysis of annealed amorphous SiO/SiO2 superlattice. European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France. ⟨hal-00303670⟩
  • B. Pivac, I. Capan, P. Dubcek, N. Radic, S. Bernstorff, et al.. Substrate temperature dependence of Si nanostructures formation in SiO/SiO2 superlattice. European Material Research Society (E-MRS) Spring Conference, Symposium on Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications, May 2007, Strasbourg, France. ⟨hal-00252113⟩
  • B. Pivac, I. Capan, P. Dubcek, N. Radic, S. Duguay, et al.. Si nanostructures formation in SiO/SiO2 superlattice for next generation solar cells. European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France. ⟨hal-00252112⟩
  • I. Kovacevic, P. Dubcek, S. Duguay, H. Zorc, N. Radic, et al.. Silicon nanoparticles formation in annealed SiO/SiO2 multilayers. European Material Research Society (E-MRS) Spring Conference, Symposium on Silicon Nanocrystals for Electronics and Sensing Applications, 2006, Nice, France. ⟨hal-00350341⟩
  • S. Duguay. Propriétés structurales de couches de SiO2 implantées germanium et application aux mémoires à nanocristaux. IXèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2006), 2006, Rennes, France. ⟨hal-00081227⟩
  • S. Duguay, J.J. Grob, A. Slaoui, P. Kern. Influence of the Ge dose in ion-implanted SiO2 layers on the related nanocrystal-memory properties. Material Research Society (MRS) Spring Meeting, Symposium on Science and Technology of Nonvolatile Memories, Apr 2006, SAN FRANCISCO, United States. p. G02-05. ⟨hal-00204821⟩
  • M. Mansour, A. En Naciri, L. Johann, S. Duguay, J.J. Grob, et al.. Dielectric function of germanium nanocrystals between 0.6 and 6.5 eV by spectroscopic ellipsometry. 13th International Symposium on Intercalation Compounds, Jun 2006, Clermont-Ferrand, France. ⟨hal-00207775⟩
  • S. Duguay. Fabrication de nanocristaux de germanium par implantation ionique et applications à effet mémoire,. VIIIèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2005), May 2005, Paris, France. ⟨hal-00134842⟩
  • S. Duguay, A. Slaoui, J.J. Grob, M. Kanoun, S. Burignat, et al.. Structural properties of Ge-implanted SiO2 layers and related MOS memory effects. European Material Research Society (E-MRS) Spring Conference, Symposium on Materials Science and Device Issues for Future Si-based Technologies, 2005, Strasbourg, France. ⟨hal-00021653⟩

Theses1 document

  • S. Duguay. Propriétés de stockage de charges de nanocristaux de germanium incorporés dans des couches de silice par implantation ionique. Micro et nanotechnologies/Microélectronique. Unuiversité de Strasbourg I, 2006. Français. ⟨hal-00211889⟩