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Lulu Zheng, Edy Azrak, Ruiling Gong, Celia Castro, Sébastien Duguay, et al.. Investigation of Sn-containing precursors for in-plane GeSn nanowire growth. Journal of Alloys and Compounds, Elsevier, 2022, 899, pp.163273. ⟨10.1016/j.jallcom.2021.163273⟩. ⟨hal-03595536⟩

P. Dumas, Sébastien Duguay, F. Hilario, A. Gauthier, D. Blavette. Uphill phosphorus diffusion in carbon co-implanted silicon. Journal of Applied Physics, American Institute of Physics, 2022, 131 (11), pp.115102. ⟨10.1063/5.0074682⟩. ⟨hal-03616394⟩

Niemat Moultif, Sébastien Duguay, O. Latry, M. Ndiaye, Joubert Eric. Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating. Microelectronics Reliability, Elsevier, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩. ⟨hal-03469148⟩

P. Dumas, S. Duguay, J. Borrel, F. Hilario, D. Blavette. Atom probe tomography quantification of carbon in silicon. Ultramicroscopy, Elsevier, 2021, 220, pp.113153. ⟨10.1016/j.ultramic.2020.113153⟩. ⟨hal-03468007⟩

P. Dumas, P.-L. Julliard, J. Borrel, Sébastien Duguay, F. Hilario, et al.. Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling. Journal of Applied Physics, American Institute of Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩. ⟨hal-03249547⟩

Ruiling Gong, Edy Azrak, Celia Castro, Sébastien Duguay, Philippe Pareige, et al.. Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO 2 nanoparticles. Nanotechnology, Institute of Physics, 2021, 32 (34), pp.345602. ⟨10.1088/1361-6528/abfc72⟩. ⟨hal-03249563⟩

P. Dumas, Sébastien Duguay, J. Borrel, F. Hilario, D. Blavette. Atom probe tomography quantification of carbon in silicon. Ultramicroscopy, Elsevier, 2021, 220, pp.113153. ⟨10.1016/j.ultramic.2020.113153⟩. ⟨hal-03249568⟩

P. Dumas, P.-L. Julliard, J. Borrel, S. Duguay, F. Hilario, et al.. Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling. Journal of Applied Physics, American Institute of Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩. ⟨hal-03468001⟩

Ruiling Gong, Zhen Zheng, Junyang An, Jean-Luc Maurice, Edy Azrak, et al.. Hydrogen Plasma-Assisted Growth of Gold Nanowires. Crystal Growth & Design, American Chemical Society, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩. ⟨hal-03030277⟩

Susanne Siebentritt, Enrico Avancini, Marcus Bär, Jakob Bombsch, Emilie Bourgeois, et al.. Heavy Alkali Treatment of Cu(In,Ga)Se 2 Solar Cells: Surface versus Bulk Effects. Advanced Energy Materials, Wiley-VCH Verlag, 2020, pp.1903752. ⟨10.1002/aenm.201903752⟩. ⟨hal-02461969⟩

Edy Azrak, Wanghua Chen, Simona Moldovan, Sébastien Duguay, Philippe Pareige, et al.. Low-Temperature Plasma-Assisted Growth of Core–Shell GeSn Nanowires with 30% Sn. Journal of Physical Chemistry C, American Chemical Society, 2019, 124 (1), pp.1220-1226. ⟨10.1021/acs.jpcc.9b10444⟩. ⟨hal-02433462⟩

P. Dumas, S. Duguay, J. Borrel, A. Gauthier, E. Ghegin, et al.. 3D atomic-scale investigation of carbon segregation in phosphorus co-implanted silicon. Applied Physics Letters, American Institute of Physics, 2019, 115 (13), pp.132103. ⟨10.1063/1.5121629⟩. ⟨hal-02298943⟩

Sébastien Duguay, Andres Echeverri, Celia Castro, Olivier Latry. Evidence of Mg segregation to threading dislocation in normally-off GaN-HEMT. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2019, 18, pp.995-998. ⟨10.1109/TNANO.2019.2942400⟩. ⟨hal-02299201⟩

Rémi Demoulin, Manuel Roussel, Sébastien Duguay, Dominique Muller, Daniel Mathiot, et al.. Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography. Journal of Physical Chemistry C, American Chemical Society, 2019, 123 (12), pp.7381-7389. ⟨10.1021/acs.jpcc.8b08620⟩. ⟨hal-02082140⟩

J. Hernández-Saz, M. Herrera, J. Pizarro, M. Gonzalez, J. Abell, et al.. Effect of the thermal annealing and the nominal composition in the elemental distribution of InxAl1-xAsySb1-y for triple junction solar cells. Journal of Alloys and Compounds, Elsevier, 2019, 792, pp.1021-1027. ⟨10.1016/j.jallcom.2019.04.119⟩. ⟨hal-02108138⟩

Simona Moldovan, Edy Azrak, Wanghua Chen, Shiwen Gao, Sébastien Duguay, et al.. Assessment of High Sn Incorporation in Ge NanoWires Synthesized via In Plane Solid-Liquid-Solid Mechanism by In-Situ TEM. Microscopy and Microanalysis, Cambridge University Press (CUP), 2018, 24 (S1), pp.306-307. ⟨10.1017/S1431927618002027⟩. ⟨hal-02183481⟩

Edy Azrak, Wanghua Chen, Simona Moldovan, Shiwen Gao, S. Duguay, et al.. Growth of In-Plane Ge 1– x Sn x Nanowires with 22 at. % Sn Using a Solid–Liquid–Solid Mechanism. Journal of Physical Chemistry C, American Chemical Society, 2018, 122 (45), pp.26236-26242. ⟨10.1021/acs.jpcc.8b07142⟩. ⟨hal-02108143⟩

J. Hernández-Saz, M. Herrera, J. Pizarro, P.L. Galindo, M. Gonzalez, et al.. Influence of the growth temperature on the composition distribution at sub-nm scale of InAlAsSb for solar cells. Journal of Alloys and Compounds, Elsevier, 2018, 763, pp.1005-1011. ⟨10.1016/j.jallcom.2018.05.333⟩. ⟨hal-02108144⟩

Arantxa Vilalta-Clemente, Mohit Raghuwanshi, Sébastien Duguay, Celia Castro, Emmanuel Cadel, et al.. Rubidium distribution at atomic scale in high efficient Cu(In,Ga)Se2thin-film solar cells. Applied Physics Letters, American Institute of Physics, 2018, 112 (10), pp.103105. ⟨10.1063/1.5020805⟩. ⟨hal-01929133⟩

Nicolas Rolland, François Vurpillot, Sébastien Duguay, Baishakhi Mazumder, James Speck, et al.. New Atom Probe Tomography Reconstruction Algorithm for Multilayered Samples: Beyond the Hemispherical Constraint. Microscopy and Microanalysis, Cambridge University Press (CUP), 2017, 23 (02), pp.247 - 254. ⟨10.1017/s1431927617000253⟩. ⟨hal-01766098⟩

Mohit Raghuwanshi, Emmanuel Cadel, Sébastien Duguay, Ludovic Arzel, Nicolas Barreau, et al.. Influence of Na on grain boundary and properties of Cu(In,Ga)Se 2 solar cells. Progress in Photovoltaics, Wiley, 2017, 25 (5), pp.367 - 375. ⟨10.1002/pip.2869⟩. ⟨hal-01720935⟩

D. Blavette, S. Duguay. Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography. Journal of Applied Physics, American Institute of Physics, 2016, 119 (18), pp.181502. ⟨10.1063/1.4948238⟩. ⟨hal-01928847⟩

F. Vurpillot, Nicolas Rolland, Robert Estivill, S. Duguay, D. Blavette. Accuracy of analyses of microelectronics nanostructures in atom probe tomography. Semiconductor Science and Technology, IOP Publishing, 2016, 31 (7), pp.074002. ⟨10.1088/0268-1242/31/7/074002⟩. ⟨hal-01928850⟩

J. Hernández-Saz, M. Herrera, S.I. Molina, C.R. Stanley, S. Duguay. Atom Probe Tomography Analysis of InAlGaAs Capped InAs/GaAs Stacked Quantum Dots with Variable Barrier Layer Thickness. Acta Materialia, Elsevier, 2016, 103, pp.651-657. ⟨10.1016/j.actamat.2015.10.048⟩. ⟨hal-01954206⟩

J Hernández-Saz, M Herrera, F J Delgado, S Duguay, T Philippe, et al.. Atom-Scale Compositional Distribution in InAlAsSb-Based Triple Junction Solar Cells by Atom Probe Tomography. Nanotechnology, Institute of Physics, 2016, 27 (30), pp.305402. ⟨10.1088/0957-4484/27/30/305402⟩. ⟨hal-01954209⟩

Robert Estivill, Adeline Grenier, Sébastien Duguay, François Vurpillot, Tanguy Terlier, et al.. Quantitative analysis of Si/SiGeC superlattices using atom probe tomography. Ultramicroscopy, Elsevier, 2015, 159, pp.223-231. ⟨10.1016/j.ultramic.2015.03.014⟩. ⟨hal-02107589⟩

N. Fernández-Delgado, M. Herrera, S.I. Molina, Celia Castro, S. Duguay, et al.. Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells. Applied Surface Science, Elsevier, 2015, 359, pp.676-678. ⟨10.1016/j.apsusc.2015.10.161⟩. ⟨hal-02111986⟩

A. Grenier, S. Duguay, J. P. Barnes, R. Serra, Nicolas Rolland, et al.. Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques. Applied Physics Letters, American Institute of Physics, 2015, 106 (21), pp.213102. ⟨10.1063/1.4921352⟩. ⟨hal-01928856⟩

Anna Maria Beltrán, Sébastien Duguay, Christian Strenger, Anton J Bauer, Fuccio Cristiano, et al.. Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Solid State Communications, Elsevier, 2015, 221, pp.28-32. ⟨10.1016/j.ssc.2015.08.017⟩. ⟨hal-01720451⟩

Nicolas Rolland, François Vurpillot, Sébastien Duguay, Didier Blavette. Dynamic evolution and fracture of multilayer field emitters in atom probe tomography: a new interpretation. European Physical Journal: Applied Physics, EDP Sciences, 2015, 72 (2), pp.21001. ⟨10.1051/epjap/2015150233⟩. ⟨hal-02107622⟩

Nicolas Rolland, François Vurpillot, Sébastien Duguay, Didier Blavette. A Meshless Algorithm to Model Field Evaporation in Atom Probe Tomography. Microscopy and Microanalysis, Cambridge University Press (CUP), 2015, 21 (6), pp.1649-1656. ⟨10.1017/S1431927615015184⟩. ⟨hal-02107013⟩

Robert Estivill, Adeline Grenier, Sébastien Duguay, François Vurpillot, Tanguy Terlier, et al.. Quantitative investigation of SiGeC layers using atom probe tomography. Ultramicroscopy, Elsevier, 2015, 150, pp.23--29. ⟨10.1016/j.ultramic.2014.11.020⟩. ⟨hal-01928855⟩

J. Hernández-Saz, M. Herrera, S.I. Molina, C.R. Stanley, S. Duguay. 3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs. Scripta Materialia, Elsevier, 2015, 103, pp.73-76. ⟨10.1016/j.scriptamat.2015.03.013⟩. ⟨hal-02177759⟩

Mohit Raghuwanshi, Adeline Lanterne, Jérôme Le Perchec, Philippe Pareige, Emmanuel Cadel, et al.. Influence of boron clustering on the emitter quality of implanted silicon solar cells: An atom probe tomography study. Progress in Photovoltaics, Wiley, 2015, 23 (12), pp.1724--1733. ⟨10.1002/pip.2607⟩. ⟨hal-01929136⟩

Nicolas Rolland, D. J. Larson, B. P. Geiser, S. Duguay, F. Vurpillot, et al.. An analytical model accounting for tip shape evolution during atom probe analysis of heterogeneous materials. Ultramicroscopy, Elsevier, 2015, 159, pp.195--201. ⟨10.1016/j.ultramic.2015.03.010⟩. ⟨hal-01928854⟩

Yang Qiu, Fuccio Cristiano, Karim Huet, Fulvio Mazzamuto, Giuseppe Fisicaro, et al.. Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon. Nano Letters, American Chemical Society, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩. ⟨hal-01659180⟩

A. Grenier, S. Duguay, J. P. Barnes, R. Serra, G. Haberfehlner, et al.. 3D analysis of advanced nano-devices using electron and atom probe tomography. Ultramicroscopy, 2014, 136, pp.185--192. ⟨10.1016/j.ultramic.2013.10.001⟩. ⟨hal-01929139⟩

Didier Blavette, Huiyuan Wang, Manon Bonvalet, Florian Hüe, Sébastien Duguay. Atom-probe tomography study of boron precipitation in highly implanted silicon. physica status solidi (a), Wiley, 2014, 211 (1), pp.126--130. ⟨10.1002/pssa.201300127⟩. ⟨hal-01928861⟩

Didier Blavette, Sébastien Duguay. Atom probe tomography in nanoelectronics. European Physical Journal: Applied Physics, EDP Sciences, 2014, 68 (1), pp.10101. ⟨10.1051/epjap/2014140060⟩. ⟨hal-01928859⟩

M. Raghuwanshi, E. Cadel, Philippe Pareige, S. Duguay, F. Couzinie-Devy, et al.. Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se2solar cells. Applied Physics Letters, American Institute of Physics, 2014, 105 (1), pp.013902. ⟨10.1063/1.4890001⟩. ⟨hal-01929138⟩

R. Khelifi, D. Mathiot, Rajiv Gupta, D. Muller, M. Roussel, et al.. Efficient n-type doping of Si nanocrystals embedded in SiO₂ by ion beam synthesis. Applied Physics Letters, American Institute of Physics, 2013, 102, pp.013116_1-4. ⟨hal-00799830⟩

T. Philippe, S. Duguay, G. Grancher, D. Blavette. Point process statistics in atom probe tomography. Ultramicroscopy, 2013, 132, pp.114--120. ⟨10.1016/j.ultramic.2012.10.004⟩. ⟨hal-01928863⟩

G. da Costa, H. Wang, S. Duguay, A. Bostel, D. Blavette, et al.. Advance in multi-hit detection and quantization in atom probe tomography. Review of Scientific Instruments, American Institute of Physics, 2012, 83 (12), ⟨10.1063/1.4770120⟩. ⟨hal-01928866⟩

H. Y. Wang, T. Philippe, S. Duguay, D. Blavette. Temperature dependence of nucleation rate in a binary solid solution. Philosophical Magazine Letters, 2012, 92 (12), pp.718--725. ⟨10.1080/09500839.2012.725948⟩. ⟨hal-01928868⟩

T. Philippe, S. Duguay, D. Mathiot, D. Blavette. Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation. Journal of Applied Physics, American Institute of Physics, 2011, 109, pp. 023501_1-4. ⟨hal-00597120⟩

T. Philippe, S. Duguay, J.J. Grob, D. Mathiot, D. Blavette. Atomic-scale study of the role of carbon on boron clustering. Thin Solid Films, Elsevier, 2010, 518, pp. 2406-2408. ⟨10.1016/j.tsf.2009.08.022⟩. ⟨hal-00464139⟩

S. Duguay, M. Ngamo, P. F Fazzini, Fuccio Cristiano, K. Daoud, et al.. Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate. Thin Solid Films, Elsevier, 2010, 518 (9), pp.2398 - 2401. ⟨10.1016/j.tsf.2009.09.159⟩. ⟨hal-01922657⟩

S. Duguay, T. Philippe, Fuccio Cristiano, D. Blavette. Direct imaging of boron segregation to extended defects in silicon. Applied Physics Letters, American Institute of Physics, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩. ⟨hal-01922903⟩

S. Duguay, A. Colin, D. Mathiot, Pascal Morin, D. Blavette. Atomic-scale redistribution of dopants in polycrystalline silicon layers. Applied Physics, Springer-Verlag, 2010, 108, pp.034911_1-7. ⟨hal-00526353⟩

T. Philippe, S. Duguay, D. Blavette. Clustering and pair correlation function in atom probe tomography. Ultramicroscopy, 2010, 110 (7), pp.862--865. ⟨10.1016/j.ultramic.2010.03.004⟩. ⟨hal-01928874⟩

T. Philippe, O. Cojocaru-Mirédin, S. Duguay, D. Blavette. Clustering and nearest neighbour distances in atom probe tomography: The influence of the interfaces. Journal of Microscopy, Wiley, 2010, 239 (1), pp.72--77. ⟨10.1111/j.1365-2818.2009.03359.x⟩. ⟨hal-01928875⟩

T. Philippe, F. de Geuser, S. Duguay, W. Lefebvre, O. Cojocaru-Mirédin, et al.. Clustering and nearest neighbour distances in atom-probe tomography. Ultramicroscopy, Elsevier, 2009, 109, pp.1304-1309. ⟨10.1016/j.ultramic.2009.06.007⟩. ⟨hal-00457542⟩

Emmanuel Cadel, François Vurpillot, Rodrigue Lardé, Sébastien Duguay, Bernard Deconihout. Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors. Journal of Applied Physics, American Institute of Physics, 2009, 106 (4), pp.044908. ⟨10.1063/1.3186617⟩. ⟨hal-01929144⟩

S. Duguay, F. Vurpillot, T. Philippe, E. Cadel, Rodrigue Lardé, et al.. Evidence of atomic-scale arsenic clustering in highly doped silicon. Journal of Applied Physics, American Institute of Physics, 2009, 106 (10), pp.106102. ⟨10.1063/1.3257178⟩. ⟨hal-01929143⟩

B. Pivac, P. Dubcek, I. Capan, H. Zorc, S. Bernstorff, et al.. Structural analysis of annealed amorphous SiO/SiO2 superlattice. Thin Solid Films, Elsevier, 2008, 516, pp. 6796-6799. ⟨hal-00300610⟩

I. Kovacevic, P. Dubcek, S. Duguay, H. Zorc, N. Radic, et al.. Silicon nanoparticles formation in annealed SiO/SiO2 multilayers. Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2007, 38, pp. 50-53. ⟨hal-00349867⟩

S. Duguay, S. Burignat, P. Kern, J.J. Grob, A. Souifi, et al.. Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers. Semicond. Sci. Technol., 2007, 22, pp. 837-842. ⟨hal-00250270⟩

M. Mansour, A. En Naciri, L. Johann, S. Duguay, J.J. Grob, et al.. Dielectric function of germanium nanocrystals between 0.6 and 6.5 eV by spectroscopic ellipsometry. Journal of Physics and Chemistry of Solids, Elsevier, 2006, 67, pp.1291-1294. ⟨hal-00207770⟩

S. Duguay, A. Slaoui, Grob J.J., M. Kanoun, S. Burignat, et al.. Structural properties of Ge-implanted SiO2 layers and related MOS memory effects. Mater. Sci. Eng. B, 2005, 124-125, pp.488-493. ⟨hal-00207848⟩

S. Duguay, J.J. Grob, A. Slaoui, Y. Le Gall, M. Amann-Liess. Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing. Journal of Applied Physics, American Institute of Physics, 2005, 97, pp.104330_1-5. ⟨hal-00134846⟩

R. Demoulin, M. Roussel, S. Duguay, D. Muller, D. Mathiot, et al.. Characterization of p-type Doping in Silicon Nanocrystals Embedded in SiO 2. Microscopy & Microanalysis 2019, Aug 2019, Portland, United States. pp.2540-2541, ⟨10.1017/S1431927619013436⟩. ⟨hal-02294165⟩

Didier Blavette, Isabelle Mouton, S. Duguay. Atom‐Probe Tomography and Nanosciences. European Microscopy Congress 2016: Proceedings, Aug 2016, Lyon, France. ⟨hal-02108167⟩

Celia Castro, Mohit Raghuwanshi, Philippe Pareige, Sébastien Duguay, Emmanuel Cadel, et al.. Combining TEM and APT for a Better Understanding of Super High Efficiency Cu(In,Ga)Se2 Thin Film Solar Cells. European Microscopy Society Congress 2016, Dec 2016, Lyon, France. pp.914-915, ⟨10.1002/9783527808465.EMC2016.6800⟩. ⟨hal-01954234⟩

Fuccio Cristiano, Y. Qiu, Eléna Bedel-Pereira, Karim Huet, Fulvio Mazzamuto, et al.. Extended defects in ion-implanted si during nanosecond laser annealing. Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩. ⟨hal-01721156⟩

R. Khelifi, D. Mathiot, D. Muller, S. Duguay. Synthèse par faisceaux d'ion et caractérisation de nanocristaux de silicium dopés dans SiO SiO₂. 13èmes Journées de la Matière Condensée (JMC13), Aug 2012, Montpellier, France. ⟨hal-00743238⟩

H. Wang, T. Philippe, J. Marcon, S. Duguay, D. Mathiot, et al.. Modeling of boron diffusion in silicon: Influence of precipitation. European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III, May 2012, Strasbourg, France. ⟨hal-00743292⟩

D. Mathiot, R. Khelifi, D. Muller, S. Duguay. Co-implantation: A simple way to grow doped Si nanocrystals embedded in SiO₂. Material Research Society (MRS) Spring Meeting, Symposium on Nanoscale Materials Modification by Photon, Ion, and Electron Beams, Apr 2012, San Francisco, United States. pp.mrss12-1455-ii08-21. ⟨hal-00697568⟩

T. Philippe, S. Duguay, J.J. Grob, D. Mathiot, D. Blavette. Atomic-scale study of the role of carbon on boron clustering. European Material Research Society (E-MRS) Spring Conference, Symposium on Silicon and Germanium issues for future CMOS devices, Jun 2009, Strasbourg, France. pp.2406-2408. ⟨hal-00409615⟩

F. Vurpillot, M. Gruber, S. Duguay, E. Cadel, B. Deconihout. Modeling artifacts in the analysis of test semiconductor structures in atom probe tomography. AIP Conference Proceedings, 2009, Unknown, Unknown Region. pp.175--180, ⟨10.1063/1.3251216⟩. ⟨hal-01929146⟩

B. Pivac, I. Capan, P. Dubcek, N. Radic, S. Duguay, et al.. Si nanostructures formation in SiO/SiO2 superlattice for next generation solar cells. European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France. ⟨hal-00252112⟩

B. Pivac, P. Dubcek, I. Capan, H. Zorc, S. Bernstorff, et al.. Structural analysis of annealed amorphous SiO/SiO2 superlattice. European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France. ⟨hal-00303670⟩

B. Pivac, I. Capan, P. Dubcek, N. Radic, S. Bernstorff, et al.. Substrate temperature dependence of Si nanostructures formation in SiO/SiO2 superlattice. European Material Research Society (E-MRS) Spring Conference, Symposium on Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications, May 2007, Strasbourg, France. ⟨hal-00252113⟩

S. Duguay, J.J. Grob, A. Slaoui, P. Kern. Influence of the Ge dose in ion-implanted SiO2 layers on the related nanocrystal-memory properties. Material Research Society (MRS) Spring Meeting, Symposium on Science and Technology of Nonvolatile Memories, Apr 2006, SAN FRANCISCO, United States. p. G02-05. ⟨hal-00204821⟩

S. Duguay. Propriétés structurales de couches de SiO₂ implantées germanium et application aux mémoires à nanocristaux. IXèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2006), 2006, Rennes, France. ⟨hal-00081227⟩

I. Kovacevic, P. Dubcek, S. Duguay, H. Zorc, N. Radic, et al.. Silicon nanoparticles formation in annealed SiO/SiO2 multilayers. European Material Research Society (E-MRS) Spring Conference, Symposium on Silicon Nanocrystals for Electronics and Sensing Applications, 2006, Nice, France. ⟨hal-00350341⟩

M. Mansour, A. En Naciri, L. Johann, S. Duguay, J.J. Grob, et al.. Dielectric function of germanium nanocrystals between 0.6 and 6.5 eV by spectroscopic ellipsometry. 13th International Symposium on Intercalation Compounds, Jun 2006, Clermont-Ferrand, France. ⟨hal-00207775⟩

S. Duguay, A. Slaoui, J.J. Grob, M. Kanoun, S. Burignat, et al.. Structural properties of Ge-implanted SiO₂ layers and related MOS memory effects. European Material Research Society (E-MRS) Spring Conference, Symposium on Materials Science and Device Issues for Future Si-based Technologies, 2005, Strasbourg, France. ⟨hal-00021653⟩

S. Duguay. Fabrication de nanocristaux de germanium par implantation ionique et applications à effet mémoire,. VIIIèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2005), May 2005, Paris, France. ⟨hal-00134842⟩

Pere Roca I Cabarrocas Roca I Cabarrocas, Wanghua Chen, Sébastien Duguay, Philippe Pareige, Edy Azrak. NANOFILAMENTS D'ALLIAGE DE GESN, PREPARATION ET APPLICATIONS. France, N° de brevet: WO2019166486. 2019. ⟨hal-02303270⟩

S. Duguay. Propriétés de stockage de charges de nanocristaux de germanium incorporés dans des couches de silice par implantation ionique. Micro et nanotechnologies/Microélectronique. Unuiversité de Strasbourg I, 2006. Français. ⟨hal-00211889⟩