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82 résultats
Excitons bounded around In-rich antiphase boundaries34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France. 2018
Poster de conférence
hal-01864401v1
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GaPSb/Si photoelectrode for Solar Fuel ProductionEuropean COST multsicaleSolar Final meeting, Apr 2019, Sofia, Bulgaria
Communication dans un congrès
hal-03102622v1
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InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 μm photoluminescence4th International Conference on Semiconductor Quantum Dots (QD 2006), May 2006, Chamonix, France. pp.3920, ⟨10.1002/pssc.200671622⟩
Communication dans un congrès
istex
hal-00491729v1
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InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrateCompound Semiconductor Week 2013 - 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), May 2013, Kobe, Japan. IEEE (ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562595⟩
Poster de conférence
hal-01167841v1
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Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layersCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States
Communication dans un congrès
hal-01147506v1
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Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μmIndium Phosphide and Related Materials, IPRM, May 2008, Versailles, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4703027⟩
Communication dans un congrès
hal-00492842v1
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Dynamic Properties of InAs/InP (311)B Quantum Dot Lasers Emitting at 1.52 μm,The International Semiconductor Laser Conference, Sep 2008, Italy
Communication dans un congrès
hal-00536762v1
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Single and Double Section InAs Quantum Dots Mode‐Locked Laser Elaborated on Misoriented (001) InP SubstrateInternational Symposium on Physics and Applications of Laser Dynamics 2013 (IS-PALD 2013), Oct 2013, Paris, France
Poster de conférence
hal-01165707v1
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Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si : structural and optical characterizationsInternational Symposium : 20th Anniversary of LPQM, Apr 2019, Cachan, France
Poster de conférence
hal-02882424v1
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InAs/InP(311)B quantum dot single mode lasers emitting at 1.52 µmePIXnet annual meeting, Sep 2006, Lausanne, Switzerland
Communication dans un congrès
hal-00496916v1
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Monolithic 1.59 µm InAs/InP Quantum Dash Passively Mode-Locked LasersSemiconductor and Integrated OptoElectronics conference, SIOE, Mar 2010, Cardiff, United Kingdom
Communication dans un congrès
hal-00662935v1
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Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasersSPIE Photonics West - OPTO 2013, Feb 2013, San Francisco, United States. pp.863407, ⟨10.1117/12.2005244⟩
Communication dans un congrès
hal-01167250v1
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Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrateApplied Physics Letters, 2008, 93, pp.161104. ⟨10.1063/1.3005194⟩
Article dans une revue
hal-00491836v1
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Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarizationTrends in Nanotechnology 2006, Sep 2006, Grenoble, France. pp.1672-1676, ⟨10.1002/pssa.200675343⟩
Communication dans un congrès
hal-00488399v1
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Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V SingularitiesACS Nano, 2020, 14 (10), pp.13127-13136. ⟨10.1021/acsnano.0c04702⟩
Article dans une revue
hal-03032030v1
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Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 μmJapanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2009, 48 (7), pp.70204. ⟨10.1143/JJAP.48.070204⟩
Article dans une revue
hal-00485726v1
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Universal growth mechanism of III-V/Si: using antiphase boundaries for devices.Réunion plénière du GDR Pulse (PULSE 2019), Jul 2019, Clermont-Ferrand, France
Communication dans un congrès
hal-02189095v1
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Average-atom model calculations of dense-plasma opacities: Review and potential applications to white-dwarf starsContributions to Plasma Physics, 2018, 58 (1), pp.30 - 41. ⟨10.1002/ctpp.201700095⟩
Article dans une revue
cea-01881612v1
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First demonstration of a 1.52 µm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layerSemiconductor Science & Technology, 2007, 22, pp.827-830. ⟨10.1088/0268-1242/22/7/028⟩
Article dans une revue
istex
hal-00493037v1
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Recent progress in QD broad area lasersePIXnet annual meeting, Sep 2006, Lausanne, Switzerland
Communication dans un congrès
hal-00491803v1
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Thermal properties of 1.5µm InAs/InP quantum dot lasersEuropean Semiconductor Laser Workshop (ESLW07), Sep 2007, Berlin, Germany. pp.1
Communication dans un congrès
hal-00496875v1
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Optical injection of quantum dot and quantum dash semiconductor lasersConference on Lasers and Electro Optics / European Quantum Electronics Conference 2009 (CLEO Europe/EQEC 2009), Jun 2009, Munich, Germany. pp.CB9.2, ⟨10.1109/CLEOE-EQEC.2009.5191534⟩
Communication dans un congrès
hal-00496853v1
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Lasers à Boîtes Quantiques InAs/InP émettant à 1.55µm : effet de la température et du nombre de plans de boîtesJournées des Nanosciences de Bretagne, Jun 2006, Rennes, France. pp.1
Communication dans un congrès
hal-00491797v1
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InAs/InP quantum dot laser grown on (113)B InP substrateLWQD : International workshop on long wavelength quantum dots : Growth and applications, Jul 2007, Rennes, France
Communication dans un congrès
hal-00486908v1
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Performances of InAs/InP quantum dot and quantum dash lasersInternational Workshop on Semiconductor Quantum Dot based Devices and Applications (IWSQDA), 2006, Paris, France
Communication dans un congrès
hal-00485313v1
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Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasersSPIE Photonics Europe 2010, Apr 2010, Bruxelles, Belgium. pp.77202F, ⟨10.1117/12.863580⟩
Communication dans un congrès
hal-00492346v1
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1.55 µm room-temperature continuous wave operation of InAs/InP (100) quantum dash ridge lasersSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00494186v1
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Monolithic 1.59 µm InAs/InP quantum dash passively mode-locked lasersAdvances in Molecular Nonlinear Optics : Information Technology and Life Sciences (AMARIS'10), May 2010, Cachan, France
Communication dans un congrès
hal-00662940v1
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Comparative study of Single- and Double-capped InAs/InP (311)B QD lasers: effects on lasing characteristicsLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1
Communication dans un congrès
hal-00491814v1
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Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cellsSolar Energy Materials and Solar Cells, 2021, 221, pp.110888. ⟨10.1016/j.solmat.2020.110888⟩
Article dans une revue
hal-03031939v1
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