Documentation
Français (FR)

Anglais (EN)

Remi Dussart

7

Documents

Présentation

Publications

942268

	Limitation of surface defects in deep GaN etching Nicolas Gosset , Thomas Tillocher , Floriane Leroy , Julien Ladroue , Philippe Lefaucheux AVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States Communication dans un congrès hal-01228462v1
	Surface state improvement in GaN deep etching for power electronics applications Nicolas Gosset , Floriane Leroy , Thomas Tillocher , Julien Ladroue , Philippe Lefaucheux 37th International Symposium on Dry Process (DPS 2015), Nov 2015, Awaji Island, Japan Communication dans un congrès hal-01228470v1
	Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices Nicolas Gosset , Julien Ladroue , Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel 226th meeting of the Electrochemical Society, Oct 2014, Cancun, Mexico Communication dans un congrès hal-01151851v1
	Effect of surface fluorination on GaN deep dry etching defects Nicolas Gosset , Julien Ladroue , Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel Plasma Etch and Strip in Microtechnology, May 2014, Grenoble, France Communication dans un congrès hal-01057239v1
	Dry deep etching of GaN wide band-gap Semiconductor Nicolas Gosset , Julien Ladroue , Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel AVS 60th International Symposium & Exhibition, Oct 2013, Long Beach, United States Communication dans un congrès hal-01057235v1
	Dry deep etching of GaN wide-bandgap semiconductor Nicolas Gosset , Julien Ladroue , Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel 19th International Vacuum Conference, Sep 2013, Paris, France Communication dans un congrès hal-01056606v1
	Deep etching of gallium nitride by chlorine based plasma Remi Dussart , Julien Ladroue , Thomas Tillocher , Mohamed Boufnichel , Nicolas Gosset Journées Nationales des Technologies Emergentes, May 2013, Evian, France Communication dans un congrès hal-00831346v1