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Remi Dussart

4

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906837

	Elucidating the effects of gas flow rate on an SF6 inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation Stefan Tinck , Thomas Tillocher , Remi Dussart , Erik Neyts , Annemie Bogaerts Journal of Physics D: Applied Physics, 2016, 49 (38), pp.385201. ⟨10.1088/0022-3727/49/38/385201⟩ Article dans une revue hal-01374746v1
	Cryogenic etching of silicon with SF6 inductively coupled plasmas: a combined modelling and experimental study Stefan Tinck , Thomas Tillocher , Rémi Dussart , Annemie Bogaerts Journal of Physics D: Applied Physics, 2015, 48, pp.155204. ⟨10.1088/0022-3727/48/15/155204⟩ Article dans une revue hal-01135854v1

	Effects of gas and surface temperatures during cryogenic etching of silicon with SF6/O2 Stefan Tinck , Erik Neyts , Thomas Tillocher , Remi Dussart , Annemie Bogaerts 69th Gaseous Electronic Conference, Oct 2016, Bochum, France Communication dans un congrès hal-01379701v1
	Cryogenic etching of silicon with SF6/O2/SiF4 plasmas: a modelling and experimental study Stefan Tinck , E.C. Neyts , Thomas Tillocher , Remi Dussart , Annemie Bogaerts 22nd International Symposium on Plasma Chemistry (ISPC 2015), Jul 2015, Antwerp, Belgium Communication dans un congrès hal-01228451v1