CV Accueil - Archive ouverte HAL

	Study of dc micro-discharge arrays made in silicon using CMOS compatible technology Mukesh Kulsreshath , Laurent Schwaederlé , Lawrence J. Overzet , Philippe Lefaucheux , Julien Ladroue Journal of Physics D: Applied Physics, 2012, 45, pp.285202. ⟨10.1088/0022-3727/45/28/285202⟩ Article dans une revue hal-00713105v1
	Optimization of submicron deep trench profiles with the STiGer cryoetching process: reduction of defects Thomas Tillocher , Wassim Kafrouni , Julien Ladroue , Philippe Lefaucheux , Mohamed Boufnichel Journal of Micromechanics and Microengineering, 2011, 21, pp.085005. ⟨10.1088/0960-1317/21/8/085005⟩ Article dans une revue hal-00655002v1
	Deep GaN etching by inductively coupled plasma and induced surface defects Julien Ladroue , Aline Meritan , Mohamed Boufnichel , Philippe Lefaucheux , Pierre Ranson Journal of Vacuum Science & Technology A, 2010, 28 (5), pp.1226. ⟨10.1116/1.3478674⟩ Article dans une revue hal-00519022v1

	Plasma deep etching of silicon, titanium and gallium nitride for microtechnology Remi Dussart , Philippe Lefaucheux , Thomas Tillocher , Nicolas Gosset , Julien Ladroue AVS 60th International Symposium & Exhibition, Oct 2013, United States Communication dans un congrès hal-01006364v1
	Plasma surface interactions in deep dry etching Thomas Tillocher , Julien Ladroue , Philippe Lefaucheux , Mohamed Boufnichel , Remi Dussart Workshop on particle - surface interactions : from surface analysis to materials processing, Jun 2013, Luxembourg, Luxembourg Communication dans un congrès hal-00831337v1
	Deep GaN Etching : Role of SiCl4 in Plasma Chemistry Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson AVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States Communication dans un congrès hal-00747746v1
	Optimization of STiGer process used to etch high aspect ratio silicon microstructures Thomas Tillocher , Philippe Lefaucheux , Julien Ladroue , Mohamed Boufnichel , Pierre Ranson AVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States Communication dans un congrès hal-00747743v1
	Deep GaN Etching by Inductively Coupled Plasma Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson HeteroSiC-WASMPE 2011, Jun 2011, Tours, France Communication dans un congrès hal-00696418v1
	Obtaining a smooth surface after deep GaN etching Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson 18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France Communication dans un congrès hal-00696419v1
	Deep Gallium Nitride Etching: ways to avoid etching defects Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Mar 2011, Nagoya, Japan Communication dans un congrès hal-00696396v1
	Characterisation of Silicon based micro discharge plasma arrays in Direct Current (DC) at atmospheric pressure Mukesh Kulsreshath , Laurent Schwaederlé , Philippe Lefaucheux , Thomas Tillocher , Julien Ladroue 6th International Workshop on Microplasmas, Apr 2011, Paris, France Communication dans un congrès hal-00707925v1
	STiGer process for silicon deep etching: extended scalloping reduction on submicron trenches Wassim Kafrouni , Thomas Tillocher , Julien Ladroue , Philippe Lefaucheux , Mohamed Boufnichel 18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France Communication dans un congrès hal-00696422v1
	Deep etching of bulk titanium by plasma Thomas Tillocher , Julien Ladroue , Wassim Kafrouni , Mukesh Kulsreshath , Philippe Lefaucheux 18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France Communication dans un congrès hal-00696425v1
	Deep silicon etching of 0.8 µm to hundreds of microns wide trenches with the STiGer process Thomas Tillocher , Wassim Kafrouni , Julien Ladroue , Philippe Lefaucheux , Pierre Ranson AVS 58th International Symposium & Exhibition, Oct 2011, Nashville, United States Communication dans un congrès hal-00696428v1
	Gravure du GaN pour la prochaine génération de diodes Schottky Julien Ladroue , Remi Dussart , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson Workshop MNTS 12-20, Minatec, Mar 2010, Grenoble, France Communication dans un congrès hal-00487358v1
	Deep Gallium Nitride Etching Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson 63rd Gaseous Electronics Conference, Oct 2010, Paris, France Communication dans un congrès hal-00696376v1
	Micro Hollow Cathode Discharge Arrays in silicon devices Remi Dussart , Mukesh Kulsreshath , Lawrence J. Overzet , Laurent Schwaederlé , Thomas Tillocher 63rd Gaseous Electronics Conference, Oct 2010, Paris, France Communication dans un congrès hal-00681902v1
	Deep GaN Etching by Inductively Coupled Plasma Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson 3RD WORKSHOP ON PLASMA ETCH AND STRIP IN MICROELECTRONICS, Mar 2010, France Communication dans un congrès hal-00487363v1
	Optimization of STiGer process for silicon deep etching Thomas Tillocher , Wassim Kafrouni , Vincent Girault , Julien Ladroue , Philippe Lefaucheux 63rd Gaseous Electronics Conference, Oct 2010, Paris, France Communication dans un congrès hal-00696366v1
	Deep Inductively Coupled Plasma Etching of GaN Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson AVS 57th International Symposium & Exhibition, Nov 2010, Albuquerque, United States Communication dans un congrès hal-00696393v1
	Silicon deep cryoetching with the STiGer process Thomas Tillocher , Vincent L. Girault , Guillaume Gomme , Franck Moro , Laurianne E. Pichon 3RD WORKSHOP ON PLASMA ETCH AND STRIP IN MICROELECTRONICS, Mar 2010, France Communication dans un congrès hal-00487360v1
	Inductively Coupled Plasma Etching of GaN and Induced Defects Julien Ladroue , Aline Meritan , Mohamed Boufnichel , Philippe Lefaucheux , Pierre Ranson AVS 56th International Symposium & Exhibition, Nov 2009, San Jose, United States Communication dans un congrès hal-00444488v1
	GaN Etching by Inductively Coupled Plasma Julien Ladroue , Aline Meritan , Mohamed Boufnichel , Philippe Lefaucheux , Pierre Ranson 17th International Colloquium on Plasma Processes, Jun 2009, Marseille, France Communication dans un congrès hal-00444471v1

Remi Dussart

Présentation

Publications

Study of dc micro-discharge arrays made in silicon using CMOS compatible technology

Optimization of submicron deep trench profiles with the STiGer cryoetching process: reduction of defects

Deep GaN etching by inductively coupled plasma and induced surface defects

Plasma deep etching of silicon, titanium and gallium nitride for microtechnology

Plasma surface interactions in deep dry etching

Deep GaN Etching : Role of SiCl4 in Plasma Chemistry

Optimization of STiGer process used to etch high aspect ratio silicon microstructures

Deep GaN Etching by Inductively Coupled Plasma

Obtaining a smooth surface after deep GaN etching

Deep Gallium Nitride Etching: ways to avoid etching defects

Characterisation of Silicon based micro discharge plasma arrays in Direct Current (DC) at atmospheric pressure

STiGer process for silicon deep etching: extended scalloping reduction on submicron trenches

Deep etching of bulk titanium by plasma

Deep silicon etching of 0.8 µm to hundreds of microns wide trenches with the STiGer process

Gravure du GaN pour la prochaine génération de diodes Schottky

Deep Gallium Nitride Etching

Micro Hollow Cathode Discharge Arrays in silicon devices

Deep GaN Etching by Inductively Coupled Plasma

Optimization of STiGer process for silicon deep etching

Deep Inductively Coupled Plasma Etching of GaN

Silicon deep cryoetching with the STiGer process

Inductively Coupled Plasma Etching of GaN and Induced Defects

GaN Etching by Inductively Coupled Plasma