Raphaël Lachaume
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Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire arrays: focus on the electrical transport in between the nanowiresNanotechnology, 2018, nanotechnology, 29 (25), pp.255401. ⟨10.1088/1361-6528/aab7e8⟩
Article dans une revue
hal-01738024v1
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Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cellsphysica status solidi (c), 2017, E‐MRS 2017 Spring Meeting – Symposium E ; E‐MRS 2017 Spring Meeting – Symposium N, 14 (10), pp.1700181. ⟨10.1002/pssc.201700181⟩
Article dans une revue
hal-01589258v1
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Plasma-enhanced chemical vapor deposition epitaxy of Si on GaAs for tunnel junction applications in tandem solar cellsJournal of Photonics for Energy, 2017, 7 (2), ⟨10.1117/1.JPE.7.022504⟩
Article dans une revue
hal-01632906v1
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Low temperature plasma epitaxy of Silicon on III-V for tandem solar cellsInternational Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany
Communication dans un congrès
hal-01632964v1
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Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells13th International Conference on Concentrator Photovoltaic Systems (CPV 13), May 2017, Ottawa, Canada
Communication dans un congrès
hal-01632921v1
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Influence of electrical transport properties on performance of Si nanowire array solar cells assessed by optoelectrical modelingE-MRS 2017 Spring Meeting, May 2017, Strasbourg, France
Communication dans un congrès
hal-01632933v1
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Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem CellsJournées Nationales du Photovoltaïque (JNPV), Nov 2016, Dourdan, France
Communication dans un congrès
hal-01424644v1
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Silicon heterojunctions and homo-heterojunctionsFrench-Russian Workshop: Beyond silicon : heterojunctions and multijunctions solar cells, Dec 2016, Gif-sur-Yvette, France
Communication dans un congrès
hal-01475783v1
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Modelling of multijunction cellsFrench-Russian Workshop, Dec 2016, Gif-Sur-Yvette, France
Communication dans un congrès
hal-01416388v1
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Realistic modeling of tandem cells formed by low temperature PECVD epitaxy of silicon-germanium on gallium arsenideE-MRS Spring Meeting 2015, May 2015, Lille, France
Communication dans un congrès
hal-01232097v1
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Towards realistic simulation of the novel III-V/epi-Si tandem solar cell conceptWorkshop Theory and Modeling for PV, IPVF, Nov 2015, Marseille, France
Communication dans un congrès
hal-01240827v1
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SiGe Low Temperature Epitaxy by PECVD on III-V MOVPE Grown Material for High Efficiency Tandem Solar Cell Applications16th European Workshop on Metalorganic Vapour Phase Epitaxy, EWMOVPE XVI, Jun 2015, Lund, Sweden
Communication dans un congrès
hal-01232098v1
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Interfaces in (p) a-Si:H/(n) c-Si heterojunctions: influence of (i) a-Si:H buffer layer and front electrode on capacitance-temperature dependencies and strong inversion layers26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany
Communication dans un congrès
hal-01232109v1
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Realistic simulation of III-V/epi-SiGe tandem solar cellsCOST Multiscale solar Workshop, Nov 2015, Valencia, Spain
Communication dans un congrès
hal-01239075v1
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Investigation of Hybrid Tunnel Junction Architectures for III-V/Si Tandem Solar Cells31st European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC 2015), Sep 2015, Hamburg, Germany. pp.75-79, ⟨10.4229/EUPVSEC20152015-1CO.10.4⟩
Communication dans un congrès
hal-01232634v1
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Simulation électrique et optique de nanofils de Silicium en géométrie radiale pour des applications photovoltaïquesJournées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France
Communication dans un congrès
hal-01238536v1
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