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100 résultats
Charge carrier lifetime and charge carrier density in organic photovoltaic solar cellsICFPAM 2013, Dec 2013, Auckland, New Zealand
Communication dans un congrès
hal-01003409v1
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Performances Comparison of Si and GaAs Based Resonant Tunneling DiodesISCS 2008, The International Symposium on Compound Semiconductors, Sep 2008, Grenoble, France
Communication dans un congrès
hal-00391921v1
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Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures15th Workshop on Dielectrics in Microelectronics, Jun 2008, Berlin, France
Communication dans un congrès
hal-00391881v1
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Ultra-thin fully-depleted SOI MOSFETs: special charge properties and coupling effectsEUROSOI 2006, 2006, Grenoble, France
Communication dans un congrès
hal-00146784v1
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Saturation Drain Current analytical modeling of Single Gate Fully Depleted SOI or SON MOSFETs in the Quasi Ballistic Regime of Transport2006 IEEE International SOI Conference, 2006, Niagara Falls, United States. pp.XX
Communication dans un congrès
hal-00146654v1
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Redox-active ions unlock substitutional doping in halide perovskitesMaterials Horizons, 2023, 10 (8), pp.2845-2853. ⟨10.1039/D3MH00663H⟩
Article dans une revue
hal-04506608v1
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Impact of TiN post-treatment on Metal Insulator Metal capacitors performancesMAM 2006, Materials for Advanced Metallization Conference, 2006, GRENOBLE, France. pp.XX
Communication dans un congrès
hal-00146672v1
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Compact model for quasi ballistic transport and quantization in strained and unstrained bulk MOSFETsULtimate Integration of Silicon (ULIS) Workshop 2005, 2005, XX
Article dans une revue
hal-00146183v1
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Insights into the Failure Mechanisms of Organic PhotodetectorsAdvanced Electronic Materials, 2019, ⟨10.1002/aelm.201700526⟩
Article dans une revue
hal-01684953v1
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Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials2008 International Conference on Solid State Devices and Materials, Sep 2008, -, France
Communication dans un congrès
hal-00391924v1
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Back-Scattering in Quasi Ballistic NanoMOSFETs: The role of Non Thermal Carrier DistributionsIEEE ULIS conference, Mar 2008, Grenoble, France
Communication dans un congrès
hal-00391933v1
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Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS StructuresJournal of Vacuum Science and Technology, 2009, 27 (1), pp.338-345. ⟨10.1116/1.3043539⟩
Article dans une revue
hal-00596105v1
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Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling DiodesEuropean Solid-State Device Research Conference, Sep 2009, Athènes, Greece. pp.237-241
Communication dans un congrès
hal-00603719v1
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HfO2-based Gate Stacks Transport Mechanisms and Parameter ExtractionSolid-State Electronics, 2010, 54 (9), pp.972-978
Article dans une revue
hal-00596344v1
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Embedded non-volatile memory study with surface potential based modelNSTI Nanotech 2009, Workshop on Compact Modeling (WCM 2009), May 2009, Ston, United States. pp.554-557
Communication dans un congrès
hal-00604191v1
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PERFORMANCE SIMULATIONS OF A 72-CELL, A-SI HET MODULE WITH DIFFERENT TAB-INTERCONNECTION GEOMETRIESEuropean Photovoltaic Solar Energy Conference (35th EU PVSEC), Sep 2018, Bruxelles, Belgium
Communication dans un congrès
hal-01895240v1
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Modeling and optimization of series resistance of planar MIM capacitorsSolid-State Electronics, 2006, 50, pp.1244-1251
Article dans une revue
hal-00145449v1
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Modeling and optimization of series resistance of planar MIM capacitorsSolid-State Electronics, 2006, 50, pp.1244
Article dans une revue
hal-00145111v1
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On the Accuracy of Current TCAD Hot Carrier Injection Models in Nanoscale DevicesSolid-State Electronics, 2010, 54 (12), pp.1669-1674
Article dans une revue
hal-00596340v1
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Thermally stimulated current for quantitative analysis of trap density in organic photodetectorsAUCAOS 2018, Dec 2018, Adelaide, Australia
Communication dans un congrès
hal-02506058v1
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NANOSIL Network of Excellence: Silicon-based nanostructures and nanodevices for long-term nanoelectronics applicationsEuropean Materials Research Society (E-MRS 2008), Symposium, May 2008, Strasbourg, France
Communication dans un congrès
hal-00391849v1
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On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale DevicesInternational Semiconductor Device Research Symposium, Dec 2009, Washington, DC, United States
Communication dans un congrès
hal-00603838v1
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Etat de l'art de la compréhension du transport quasi ballistique dans les composants MOS avancésGDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France
Communication dans un congrès
hal-00604961v1
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Impact of Ohmic Contacts on Space Charge Limited Currents in Au / Pentacene / Au StructuresInternational Conference on Organic Electronics 2009, Jun 2009, Liverpool, United Kingdom
Communication dans un congrès
hal-00603796v1
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Semi-analytical modelling of short channel effects in Si Double-Gate, Tri-Gate and Gate-All-Around MOSFETsphysica status solidi (c), 2008, 5 (12), pp.3605-3608
Article dans une revue
hal-00391594v1
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The Quantization Impact of Accumulated Carriers in Silicide-Gated MOSFETsIEEE Electron Device Letters, 2008, 29, pp.628-631
Article dans une revue
hal-00391601v1
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Analytical ModelsSINANO Device-Modelling Summer School, 2006, Bertinoro, Italy
Communication dans un congrès
hal-00145643v1
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Semiconductors & Optics: an introductionEcole Dautreppe 2015 PHOTONIQUE, Patricia Segonds, Lucien Besombes Dec 2015, Grenoble, France
Communication dans un congrès
hal-01385505v1
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Three-dimensional hyperspectral imaging: A new method for human face acquisitionIS&T International Symposium on Electronic Imaging 2018, Material Appearance 2018, Jan 2018, Burlingame, CA, United States. ⟨10.2352/ISSN.2470-1173.2018.8.MAAP-152⟩
Communication dans un congrès
hal-01700610v1
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Analysis of edge losses on silicon heterojunction half solar cellsSolar Energy Materials and Solar Cells, 2020, 204, pp.110213. ⟨10.1016/j.solmat.2019.110213⟩
Article dans une revue
hal-02318359v1
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