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Charge carrier lifetime and charge carrier density in organic photovoltaic solar cells

 Lionel Hirsch , Anil K. Thakur , Guillaume Wantz , Raphaël Clerc , Alex Barker , et al.
ICFPAM 2013, Dec 2013, Auckland, New Zealand
Communication dans un congrès hal-01003409v1

Redox-active ions unlock substitutional doping in halide perovskites

 Zuzanna Molenda , Bastien Politi , Raphaël Clerc , Mamatimin Abbas , Sylvain Chambon , et al.
Materials Horizons, 2023, 10 (8), pp.2845-2853. ⟨10.1039/D3MH00663H⟩
Article dans une revue hal-04506608v1

Saturation Drain Current analytical modeling of Single Gate Fully Depleted SOI or SON MOSFETs in the Quasi Ballistic Regime of Transport

 M. Ferrier , R. Clerc , L. Lucci , Gérard Ghibaudo , A. Vandooren , et al.
2006 IEEE International SOI Conference, 2006, Niagara Falls, United States. pp.XX
Communication dans un congrès hal-00146654v1

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

 E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet , et al.
ISCS 2008, The International Symposium on Compound Semiconductors, Sep 2008, Grenoble, France
Communication dans un congrès hal-00391921v1

Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures

 J. Coignus , R. Clerc , Cédric Leroux , G. Reimbold , G. Ghibaudo
15th Workshop on Dielectrics in Microelectronics, Jun 2008, Berlin, France
Communication dans un congrès hal-00391881v1

Ultra-thin fully-depleted SOI MOSFETs: special charge properties and coupling effects

 S. Eminente , Sorin Cristoloveanu , R. Clerc , A. Ohata , Gérard Ghibaudo
EUROSOI 2006, 2006, Grenoble, France
Communication dans un congrès hal-00146784v1

Semiconductors & Optics: an introduction

 Raphaël Clerc
Ecole Dautreppe 2015 PHOTONIQUE, Patricia Segonds, Lucien Besombes Dec 2015, Grenoble, France
Communication dans un congrès hal-01385505v1
Image document

Three-dimensional hyperspectral imaging: A new method for human face acquisition

 Lou Gevaux , Cyprien Adnet , Pierre Seroul , Raphaël Clerc , Alain Trémeau , et al.
IS&T International Symposium on Electronic Imaging 2018, Material Appearance 2018, Jan 2018, Burlingame, CA, United States. ⟨10.2352/ISSN.2470-1173.2018.8.MAAP-152⟩
Communication dans un congrès hal-01700610v1

Thermally stimulated current for quantitative analysis of trap density in organic photodetectors

 Lionel Hirsch , Kielar Marcin , Olivier François-Martin , Bruno Flament , Mehdi Daanoune , et al.
AUCAOS 2018, Dec 2018, Adelaide, Australia
Communication dans un congrès hal-02506058v1

On the Accuracy of Current TCAD Hot Carrier Injection Models in Nanoscale Devices

 A. Zaka , Q. Rafhay , M. Iellina , P. Palestri , R. Clerc , et al.
Solid-State Electronics, 2010, 54 (12), pp.1669-1674
Article dans une revue hal-00596340v1

Etat de l'art de la compréhension du transport quasi ballistique dans les composants MOS avancés

 R. Clerc , Q. Rafhay , G. Ghibaudo
GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France
Communication dans un congrès hal-00604961v1

Impact of Ohmic Contacts on Space Charge Limited Currents in Au / Pentacene / Au Structures

 S. Altazin , R. Clerc , R. Gwoziecki , G. Ghibaudo , G. Pananakakis , et al.
International Conference on Organic Electronics 2009, Jun 2009, Liverpool, United Kingdom
Communication dans un congrès hal-00603796v1

On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices

 A. Zaka , Q. Rafhay , P. Palestri , R. Clerc , D. Rideau , et al.
International Semiconductor Device Research Symposium, Dec 2009, Washington, DC, United States
Communication dans un congrès hal-00603838v1

The Quantization Impact of Accumulated Carriers in Silicide-Gated MOSFETs

 N. Rodriguez , F. Gámiz , L. Donetti , R. Clerc , G. Ghibaudo , et al.
IEEE Electron Device Letters, 2008, 29, pp.628-631
Article dans une revue hal-00391601v1

NANOSIL Network of Excellence: Silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

 F. Balestra , E. Parker , D. Leadley , S. Mantl , Emmanuel Dubois , et al.
European Materials Research Society (E-MRS 2008), Symposium, May 2008, Strasbourg, France
Communication dans un congrès hal-00391849v1

Semi-analytical modelling of short channel effects in Si Double-Gate, Tri-Gate and Gate-All-Around MOSFETs

 A. Tsormpatzoglou , C.A. Dimitriadis , R. Clerc , G. Pananakakis , G. Ghibaudo
physica status solidi (c), 2008, 5 (12), pp.3605-3608
Article dans une revue hal-00391594v1

Analytical Models

 R. Clerc
SINANO Device-Modelling Summer School, 2006, Bertinoro, Italy
Communication dans un congrès hal-00145643v1

Modeling and optimization of series resistance of planar MIM capacitors

 A. Bajolet , R. Clerc , G. Pananakakis , E. Picollet , N. Segura , et al.
Solid-State Electronics, 2006, 50, pp.1244-1251
Article dans une revue hal-00145449v1

Modeling and optimization of series resistance of planar MIM capacitors

 A. Bajolet , R. Clerc , E. Picollet , N. Segura , S. Boret , et al.
Solid-State Electronics, 2006, 50, pp.1244
Article dans une revue hal-00145111v1

Non-metallic effects in silicided gate MOSFETs

 N. Rodrriguez , F. Gamiz , R. Clerc , C. Sampedro , A. Godoy , et al.
Solid-State Electronics, 2010, 53 (12), pp.1313-1317
Article dans une revue hal-00596351v1

Optical constants (n, k) extraction from R, T measurements in organic thin film

 Victorien Raulot , Raphael Clerc , Mathieu Hébert , Benjamin Bouthinon Bouthinon , Jean-Marie Verilhac
International Conference on Organic Electronics, Jun 2015, Erlangen, Germany
Communication dans un congrès ujm-01225222v1

Analysis of edge losses on silicon heterojunction half solar cells

 Félix Gerenton , Julien Eymard , Samuel Harrison , Raphaël Clerc , Delfina Munoz
Solar Energy Materials and Solar Cells, 2020, 204, pp.110213. ⟨10.1016/j.solmat.2019.110213⟩
Article dans une revue hal-02318359v1

Characterization of UV–Vis–NIR optical constants of encapsulant for accurate determination of absorption and backscattering losses in photovoltaics modules

 Julien Eymard , Raphael Clerc , Vincent Duveiller , Benjamin Commault , Mathieu Hebert
Solar Energy Materials and Solar Cells, 2022, 240, pp.111717. ⟨10.1016/j.solmat.2022.111717⟩
Article dans une revue hal-03620275v1
Image document

On the minimum thickness of doped Electron/Hole Transport Layers in organic semiconductor devices

 D. Oussalah , R. Clerc , J. Baylet , R. Paquet , C. Sésé , et al.
Journal of Applied Physics, 2021, 130 (12), pp.125502. ⟨10.1063/5.0060429⟩
Article dans une revue hal-03358906v1
Image document

On the front and back side quantum efficiency differences in semi-transparent organic solar cells and photodiodes

 B. Bouthinon , R. Clerc , J. Verilhac , B. Racine , J. de Girolamo , et al.
Journal of Applied Physics, 2018, 123, pp.125501. ⟨10.1063/1.5017030⟩
Article dans une revue hal-01741227v1

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

 E. Buccafurri , R. Clerc , F. Calmon , M.G. Pala , A. Poncet , et al.
physica status solidi (c), 2009, 6 (6), pp.1408-1411
Article dans une revue hal-00596139v1

Performance and analytical modeling of Metal-Insulator-Metal Field Controlled Tunnel Transistors

 M. Ferrier , D. Zhang , P. Griffin , R. Clerc , S. Monfray , et al.
Solid-State Electronics, 2010, 54 (12), pp.1525-1531
Article dans une revue hal-00596350v1

Injection Velocity Optimization in Quasi-Ballistic Si-nMOSFETs

 M. Ferrier , R. Clerc , Q. Raphay , F. Daugé , Gérard Ghibaudo , et al.
Silicon Nanoelectronics Workshop, 2006, Honolulu, United States
Communication dans un congrès hal-00146658v1

A simple approach to account for the impact of quantum confinement on the charge in semi classical montecarlo simulations of Bulk nMOSFETs

 R. Hudé , D. Villanueva , R. Clerc , Gérard Ghibaudo , E. Robilliart
ULtimate Integration of Silicon (ULIS) Workshop 2005, 2005, XX, pp.XX
Article dans une revue hal-00146185v1

Performance of two-flux and four-flux models for predicting the spectral reflectance and transmittance factors of flowable dental resin composites

 Vincent Duveiller , Raphaël Clerc , Julien Eymard , Jean-Pierre Salomon , Mathieu Hébert
Dental Materials, 2023, ⟨10.1016/j.dental.2023.06.010⟩
Article dans une revue hal-04148642v1
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