Characterization and modelling of gate current injection in embedded non-volatile flash memory
Alban Zaka
,
Davide Garetto
,
Denis Rideau
,
Pierpaolo Palestri
,
Jean-Philippe Manceau
,
et al.
Communication dans un congrès
hal-01959411v1
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Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology
G. Hiblot
,
J. Lacord
,
M. Akbal
,
Q. Rafhay
,
F. Boeuf
,
et al.
Article dans une revue
hal-01947635v1
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Experimental and theoretical investigation of RRAM endurance statistical behavior
D. Alfaro Robayo
,
G. Sassine
,
Quentin Rafhay
,
Gérard Ghibaudo
,
Gabriel Molas
,
et al.
49th IEEE Semiconductor Interface Specialists Conference (SISC) , IEEE, Dec 2018, San Diego, United States. pp.13.2
Communication dans un congrès
hal-02052290v1
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Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs
Q. Rafhay
,
R. Clerc
,
G. Ghibaudo
,
G. Pananakakis
Solid-State Electronics , 2008, 52 (Issue 10), pp.1474-1481
Article dans une revue
hal-00391582v1
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Estimations of the Ion-Ioff Performances of Nano nMOSFETs with Alternative Channels Materials
Q. Rafhay
,
R. Clerc
,
G. Pananakakis
,
G. Ghibaudo
4th EUROSOI Workshop , Jan 2008, EUROSOI, France. pp.43-44
Communication dans un congrès
hal-00391957v1
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Optical absorption and transport mechanisms in ZnO nanowire-based ETA solar cells
Jerome Michallon
,
Davide Bucci
,
Quentin Rafhay
,
Vincent Consonni
,
Anne Kaminski
EMRS2014-fall meeting , 2014, Warsaw, Poland
Poster de conférence
hal-02918362v1
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Tunable Morphology and Doping of ZnO Nanowires by Chemical Bath Deposition Using Aluminum Nitrate
Claire Verrier
,
Estelle Appert
,
Odette Chaix-Pluchery
,
Laetitia Rapenne
,
Quentin Rafhay
,
et al.
Article dans une revue
hal-01758853v1
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On the impact of OxRAM-based synapses variability on convolutional neural networks performance
D. Garbin
,
E. Vianello
,
O. Bichler
,
M. Azzaz
,
Q. Rafhay
,
et al.
2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15) , Jul 2015, Boston, MA, United States. pp.193-198,
⟨10.1109/NANOARCH.2015.7180611⟩
Communication dans un congrès
cea-01839851v1
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Impact of access resistance on New-Y function methodology for MOSFET parameter extraction in advanced FD-SOI technology
Jean-Baptiste Henry
,
Antoine Cros
,
Julien Rosa
,
Quentin Rafhay
,
Gérard Ghibaudo
2017 International Conference of Microelectronic Test Structures (ICMTS) , Mar 2017, Grenoble, France. pp.68-72,
⟨10.1109/ICMTS.2017.7954269⟩
Communication dans un congrès
hal-01959125v1
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CMOS roadmap analysis from the perspective of III-V technology using MASTAR
Gaspard Hiblot
,
Quentin Rafhay
,
Gabriel Mugny
,
Gérard Ghibaudo
,
Frédéric Boeuf
2015 Silicon Nanoelectronics Workshop (SNW) , Jun 2015, Kyoto, Japan. pp.115-116
Communication dans un congrès
hal-02049782v1
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Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR
Gaspard Hiblot
,
Quentin Rafhay
,
Loic Gaben
,
Gérard Ghibaudo
,
Frédéric Boeuf
Communication dans un congrès
hal-01959154v1
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Investigation of Back-Bias Capacitance Coupling Coefficient Measurement Methodology for Floating-Gate Nonvolatile Memory Cells
M. Florian Beug
,
Quentin Rafhay
,
Michiel van Duuren
,
Russell Duane
IEEE Transactions on Electron Devices , 2010, 57 (6), pp.1253-1260
Article dans une revue
hal-01959422v1
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Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials
Q. Rafhay
,
R. Clerc
,
G. Pananakakis
,
G. Ghibaudo
2008 International Conference on Solid State Devices and Materials , Sep 2008, -, France
Communication dans un congrès
hal-00391924v1
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Resistive memory variability: A simplified trap-assisted tunneling model
Daniele Garbin
,
Elisa Vianello
,
Quentin Rafhay
,
Mourad Azzaz
,
Philippe Candelier
,
et al.
Article dans une revue
hal-01947671v1
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Embedded non-volatile memory study with surface potential based model
D. Garetto
,
A. Zaka
,
V. Quenette
,
D. Rideau
,
E. Dornel
,
et al.
NSTI Nanotech 2009, Workshop on Compact Modeling (WCM 2009) , May 2009, Ston, United States. pp.554-557
Communication dans un congrès
hal-00604191v1
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Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices
Gaspard Hiblot
,
Tapas Dutta
,
Quentin Rafhay
,
Joris Lacord
,
Madjid Akbal
,
et al.
Article dans une revue
hal-01947631v1
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Universality of trap-induced mobility fluctuations between 1/f noise and Random Telegraph Noise in nanoscale FD-SOI MOSFETs
Owen Gauthier
,
Sébastien Haendler
,
Quentin Rafhay
,
Christoforos Theodorou
Article dans une revue
hal-04305435v1
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Probing hidden conduction mechanisms in diced silicon solar cells by low frequency noise analysis
Chloé Wulles
,
Quentin Rafhay
,
Thibaut Desrues
,
Anne Kaminski
,
Christoforos Theodorou
Article dans une revue
hal-04305470v1
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Improvements in low temperature (<625°C) FDSOI devices down to 30nm gate length
C. Xu
,
P. Batude
,
M. Vinet
,
M. Mouis
,
M. Cassé
,
et al.
Communication dans un congrès
hal-01959359v1
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Plasma immersion ion implantation (PIII): New path for optimizing doping profiles of advanced phosphorus emitters
Antoine Veau
,
Thibaut Desrues
,
Adeline Lanterne
,
Pierre Bellanger
,
Frank Torregrosa
,
et al.
SiliconPV 2018: 8th International Conference on Silicon Photovoltaics , Mar 2018, Lausanne, Switzerland. pp.110007,
⟨10.1063/1.5049316⟩
Communication dans un congrès
hal-01959074v1
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On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices
A. Zaka
,
Q. Rafhay
,
P. Palestri
,
R. Clerc
,
D. Rideau
,
et al.
International Semiconductor Device Research Symposium , Dec 2009, Washington, DC, United States
Communication dans un congrès
hal-00603838v1
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Etat de l'art de la compréhension du transport quasi ballistique dans les composants MOS avancés
R. Clerc
,
Q. Rafhay
,
G. Ghibaudo
GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques , May 2009, Orsay, France
Communication dans un congrès
hal-00604961v1
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On the Accuracy of Current TCAD Hot Carrier Injection Models in Nanoscale Devices
A. Zaka
,
Q. Rafhay
,
M. Iellina
,
P. Palestri
,
R. Clerc
,
et al.
Solid-State Electronics , 2010, 54 (12), pp.1669-1674
Article dans une revue
hal-00596340v1
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Electron and Hole Mobility in Semiconductor Devices
Quentin Rafhay
,
Gérard Ghibaudo
Chapitre d'ouvrage
hal-01959198v1
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Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment
Clement Nguyen
,
Carlo Cagli
,
Elisa Vianello
,
Alain Persico
,
Gabriel Molas
,
et al.
2015 IEEE International Integrated Reliability Workshop (IIRW) , Oct 2015, South Lake Tahoe, CA, United States. pp.17-20,
⟨10.1109/IIRW.2015.7437059⟩
Communication dans un congrès
hal-01959140v1
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Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation
Diego Alfaro Robayo
,
Gilbert Sassine
,
Quentin Rafhay
,
Gérard Ghibaudo
,
Gabriel Molas
,
et al.
Article dans une revue
hal-02126884v1
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Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices
Jessy Micout
,
Quentin Rafhay
,
Xavier Garros
,
Mikael Cassé
,
Jean Coignus
,
et al.
Communication dans un congrès
cea-01525266v1
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LaNiO3 thin films: influence of the deposition technique and growth parameters on the film quality
Klaasjan Maas
,
Michel Boudard
,
Quentin Rafhay
,
Carmen Jimenez
,
Laetitia Rapenne
,
et al.
2018 E-MRS Spring Meeting , Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01981257v1
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(Invited) Understanding Resistive Switching in Manganite-based Memristive Devices
Mónica Burriel
,
Dolors Pla
,
Odette Chaix-Pluchery
,
Raquel Rodriguez-Lamas
,
Michel Boudard
,
et al.
232nd ECS MEETING: Symposium on Oxide Memristors , J. Rupp, J. Nicholas, J.J. Yang, S. Nonnenmann, Oct 2017, Washington DC, United States
Communication dans un congrès
hal-02066346v1
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Formation Mechanisms and Physical Properties of Al-doped ZnO Nanowires by Chemical Bath Deposition
C. Verrier
,
E. Appert
,
O. Chaix-Pluchery
,
L. Rapenne
,
Fares Chouchane
,
et al.
2016 E-MRS Fall Meeting: Symposium C Nano-Engineering of Materials and Interfaces: design, synthesis and applications , A. Illiberi, C. Detavernier, D. Barreca, F. Roozeboom, M. Van Bael, T. Anthopoulos, Sep 2016, Varsaw, Poland
Communication dans un congrès
hal-02016936v1
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