Pierre-Olivier Bouchard
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Investigations of Thermomechanical Stress Induced by TSV-Middle (Through-Silicon via) in 3-D ICs by Means of CMOS Sensors and Finite-Element MethodIEEE Transactions on Components, Packaging and Manufacturing Technology. Part A, Manufacturing Technology, 2015, 5 (8), pp.1085-1092 - Article number 7164297. ⟨10.1109/TCPMT.2015.2445099⟩
Article dans une revue
hal-01221158v1
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Packaging induced stress effects investigations on 40nm CMOS technology node: Measurements and optimization of device shifts2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC), Dec 2015, Singapore, Singapore. pp.346-351, ⟨10.1109/EPTC.2015.7412333⟩
Communication dans un congrès
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CMOS stress sensor for 3D integrated circuits: Thermo-mechanical effects of Through Silicon Via (TSV) on surrounding silicon15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014, Apr 2014, Ghent, Belgium. 8 p. - ISBN 978-1-4799-4791-1, ⟨10.1109/EuroSimE.2014.6813808⟩
Communication dans un congrès
hal-01024448v1
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Investigation of TSV induced thermo-mechanical stress: Implementation of piezoresistive sensors and correlation with simulation9th European Conference on Residual Stresses, ECRS 2014, Jul 2014, Troyes, France. pp.975-981, ⟨10.4028/www.scientific.net/AMR.996.975⟩
Communication dans un congrès
hal-01063670v1
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