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Researcher identifiers

European projects

Number of documents

270

Pierre LEFEBVRE - Directeur de Recherche CNRS - Directeur du Laboratoire Charles Coulomb (L2C)


Patents2 documents

  • Jelena Ristic, Martin Strassburg, Pierre Lefebvre. Light-emitting diode chip. Phosphor-free-all-InGaN White Light LEDs using Nanocolumns.. Germany, Patent n° : EP2506321. L2C:11-359. 2012. ⟨hal-02074092⟩
  • Jelena Ristic, Pierre Lefebvre, Martin Strassburg, Werner Bergbauer. Optical gas sensing device.. Germany, Patent n° : EP2518475. 2012. ⟨hal-01306407⟩

Book sections2 documents

  • Pierre Lefebvre. Surface related optical properties of GaN-based nanowires.. V. Consonni, G. Feuillet. Wide Band Gap Semiconductor Nanowires 1., John Wiley & Sons, Inc., Hoboken, NJ, USA., pp.59-79, 2014, Print: 978-1-84821-597-9. Online:9781118984321. ⟨10.1002/9781118984321.ch3⟩. ⟨hal-01061571⟩
  • Pierre Lefebvre, Bernard Gil, Jean Massies, Nicolas Grandjean, Mathieu Leroux, et al.. Physics and optical properties of GaN-AlGaN quantum wells.. H. Jiang; O. Manasreh III-V Nitride Semiconductors : Optical Properties I, Taylor & Francis Books, pp.249, 2002, 1-56032-972-6. ⟨hal-01306468⟩

Books1 document

  • Henry Mathieu, Thierry Bretagnon, Pierre Lefebvre. Physique des Semiconducteurs et des Composants Electroniques - Problèmes Résolus. : Complément pratique de l'ouvrage "Physique des semiconducteurs et des composants électroniques". - 2e et 3e cycles, écoles d'ingénieurs.. Dunod, 2001, Collection Sciences Sup, 2-10-004662-4. ⟨hal-01306435⟩

Directions of work or proceedings2 documents

  • Hiroshi Amano, E. Calleja, Jürgen Christen, Markus Kamp, Pierre Lefebvre, et al.. Proceedings Symposium H, "GaN & Related Compounds". E-MRS Spring Meeting.: Materials Science and Engineering: B. Pierre Lefebvre; Enrique Calleja; Tadeusz Suski; Jürgen Christen; Hiroshi Amano; James Speck; Markus Kamp. E-MRS Spring Meeting. Symposium H, "GaN & Related Compounds". , Jun 2002, Strasbourg, France. 93 (1-3), Elsevier Science B.V., pp.1-245, 2002, ⟨10.1016/S0921-5107(02)00114-9⟩. ⟨hal-01312713⟩
  • Gérald Bastard, Pierre Lefebvre. Proceedings of the 7th International Conference on Optics and Excitons in Confined Systems (OECS7).: Montpellier, France, September 3–7, 2001.. Pierre Lefebvre; Gérald Bastard. 7th International Conference on Optics and Excitons in Confined Systems (OECS7)., Sep 2001, Montpellier, France. 190 (2-3), WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, pp.303-603 (Part 1) et 605-870 (Part 2), 2002, Proceedings of the 7th International Conference on Optics and Excitons in Confined Systems (OECS7)., ⟨10.1002/1521-396X(200204)190:2<303::AID-PSSA303>3.0.CO;2-B⟩. ⟨hal-01312678⟩

Journal articles121 documents

  • François Chiaruttini, Thierry Guillet, Christelle Brimont, Benoit Jouault, Pierre Lefebvre, et al.. Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures. Nano Letters, American Chemical Society, 2019, 19 (8), pp.4911-4918. ⟨10.1021/acs.nanolett.9b00914⟩. ⟨hal-02272702⟩
  • T. Suski, G Staszczak, K Korona, P. Lefebvre, E. Monroy, et al.. Switching of exciton character in double InGaN/GaN quantum wells. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98, ⟨10.1103/PhysRevB.98.165302⟩. ⟨hal-01891681⟩
  • Fedor Fedichkin, Thierry Guillet, Pierre Valvin, Benoit Jouault, Christelle Brimont, et al.. Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells. Physical Review Applied, American Physical Society, 2016, 6 (1), pp.014011. ⟨10.1103/PhysRevApplied.6.014011⟩. ⟨hal-01353893v2⟩
  • Julien Barjon, Pierre Valvin, Christelle Brimont, Pierre Lefebvre, Ovidiu Brinza, et al.. Picosecond dynamics of free and bound excitons in doped diamond.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2016, 93 (11), pp.115202. ⟨hal-01287753⟩
  • Yuliya Kuznetsova, Fedor Fedichkin, Peristera Andreakou, Eric Calman, L. V. Butov, et al.. Transport of indirect excitons in ZnO quantum wells.. Optics Letters, Optical Society of America - OSA Publishing, 2015, 40 (15), pp.3667-3670. ⟨10.1364/OL.40.003667⟩. ⟨hal-01181619⟩
  • Fedor Fedichkin, Peristera Andreakou, Benoit Jouault, Maria Vladimirova, Thierry Guillet, et al.. Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2015, 91 (20), pp.205424. ⟨10.1103/PhysRevB.91.205424⟩. ⟨hal-01154792⟩
  • Manuel Lopez-Ponce, A. Nakamura, M. Suzuki, J. Temmyo, S. Agouram, et al.. VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.. Nanotechnology, Institute of Physics, 2014, 25, pp.255202. ⟨10.1088/0957-4484/25/25/255202⟩. ⟨hal-01009919⟩
  • Ana Bengoechea-Encabo, Steven Albert, D. Lopez-Romero, Pierre Lefebvre, Francesca Barbagini, et al.. Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range.. Nanotechnology, Institute of Physics, 2014, 25 (43), pp.435203. ⟨10.1088/0957-4484/25/43/435203⟩. ⟨hal-01073992⟩
  • Pierre Corfdir, Johannes K. Zettler, Christian Hauswald, Sergio Fernandez-Garrido, Oliver Brandt, et al.. Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2014, 90 (20), pp.205301. ⟨10.1103/PhysRevB.90.205301⟩. ⟨hal-01083398⟩
  • Pierre Corfdir, Barbara van Hattem, Emanuele Uccelli, Sonia Conesa-Boj, Pierre Lefebvre, et al.. Three-dimensional magneto-photoluminescence as a probe of the electronic properties of crystal phase quantum disks in GaAs nanowires.. Nano Letters, American Chemical Society, 2013, 13 (11), pp.5303. ⟨10.1021/nl4028186⟩. ⟨hal-00904133⟩
  • Manuel Lopez-Ponce, A. Hierro, J.-M. Ulloa, Pierre Lefebvre, E. Munoz, et al.. Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing. Applied Physics Letters, American Institute of Physics, 2013, 102, pp.143103. ⟨10.1063/1.4799491⟩. ⟨hal-00809307⟩
  • Pierre Corfdir, Pierre Lefebvre. Role of the dielectric mismatch on the properties of donors in semiconductor nanostructures bounded by air.. Journal of Applied Physics, American Institute of Physics, 2012, 112, pp.106104. ⟨10.1063/1.4765031⟩. ⟨hal-00758583⟩
  • Pierre Corfdir, Pierre Lefebvre. Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: the model-case of GaN.. Journal of Applied Physics, American Institute of Physics, 2012, 112, pp.053512. ⟨10.1063/1.4749789⟩. ⟨hal-00750406⟩
  • Steven Albert, Ana Bengoechea-Encabo, Pierre Lefebvre, Francesca Barbagini, M.A. Sanchez-Garcia, et al.. Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies.. Applied Physics Letters, American Institute of Physics, 2012, 100, pp.231906. ⟨10.1063/1.4728115⟩. ⟨hal-00704507⟩
  • P. Corfdir, J. Levrat, G. Rossbach, R. Butté, E. Feltin, et al.. Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multi-quantum well microcavities.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2012, 85 (24), pp.245308. ⟨10.1103/PhysRevB.85.245308⟩. ⟨hal-00708277⟩
  • Pierre Corfdir, Amélie Dussaigne, H. Teisseyre, T. Suski, Izabella Grzegory, et al.. Thermal carrier emission and nonradiative recombinations in nonpolar(Al,Ga)N/GaN quantum wells grown on bulk GaN.. Journal of Applied Physics, American Institute of Physics, 2012, 111, pp.033517. ⟨10.1063/1.3681816⟩. ⟨hal-00677582⟩
  • Pierre Lefebvre, Steven Albert, Jelena Ristic, S. Fernandez-Garrido, J. Grandal, et al.. Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns.. Superlattices and Microstructures, Elsevier, 2012, 52, pp.165. ⟨10.1016/j.spmi.2012.05.001⟩. ⟨hal-00704495⟩
  • Steven Albert, Ana Bengoechea-Encabo, Pierre Lefebvre, M.A. Sanchez-Garcia, E. Calleja, et al.. Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.. Applied Physics Letters, American Institute of Physics, 2011, 99, pp.131108. ⟨10.1063/1.3644986⟩. ⟨hal-00631167⟩
  • Pierre Lefebvre, S. Fernandez-Garrido, J. Grandal, J. Ristic, M.A. Sanchez-Garcia, et al.. Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology.. Applied Physics Letters, American Institute of Physics, 2011, 98 (8), pp.083104. ⟨10.1063/1.3556643⟩. ⟨hal-00631205⟩
  • Pierre Corfdir, J. Levrat, Amélie Dussaigne, Pierre Lefebvre, H. Teisseyre, et al.. Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 83 (24), pp.245326. ⟨10.1103/PhysRevB.83.245326⟩. ⟨hal-00631188⟩
  • Amélie Dussaigne, Pierre Corfdir, Jacques Levrat, T Zhu, Denis Martin, et al.. One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells.. Semiconductor Science and Technology, IOP Publishing, 2010, 26 (2), pp.025012. ⟨10.1088/0268-1242/26/2/025012⟩. ⟨hal-01260924⟩
  • P. Corfdir, Pierre Lefebvre, Laurent Balet, Samuel Sonderegger, Amélie Dussaigne, et al.. Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence.. Journal of Applied Physics, American Institute of Physics, 2010, 107 (4), pp.043524. ⟨10.1063/1.3305336⟩. ⟨hal-00632548⟩
  • P. Corfdir, Pierre Lefebvre, J. Levrat, Amélie Dussaigne, Jean-Daniel Ganière, et al.. Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy. Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.043102. ⟨10.1063/1.3075596⟩. ⟨hal-00390006⟩
  • P. Corfdir, Pierre Lefebvre, J. Ristic, Pierre Valvin, E. Calleja, et al.. Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates. Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.013113. ⟨10.1063/1.3062742⟩. ⟨hal-00390003⟩
  • P. Corfdir, J. Ristic, Pierre Lefebvre, Amélie Dussaigne, D. Martin, et al.. Exciton dynamics involving basal stacking faults in a-plane GaN studied by low-temperature time-resolved cathodoluminescence.. Applied Physics Letters, American Institute of Physics, 2009, 94, pp.201115. ⟨10.1063/1.3142396⟩. ⟨hal-00391736⟩
  • P. Corfdir, Pierre Lefebvre, J. Ristic, Jean-Daniel Ganière, Benoit Deveaud-Plédran. Electron localization by a donor in the vicinity of a basal stacking fault in GaN.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2009, 80 (15), pp.153309. ⟨10.1103/PhysRevB.80.153309⟩. ⟨hal-00632552⟩
  • Richard Bardoux, Thierry Guillet, Bernard Gil, Pierre Lefebvre, Thierry Bretagnon, et al.. Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory;. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2008, 77 (23), pp.235315. ⟨10.1103/PhysRevB.77.235315⟩. ⟨hal-01220150⟩
  • Richard Bardoux, Thierry Guillet, B. Gil, P. Lefebvre, T. Bretagnon, et al.. Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2008, 77, pp.235315. ⟨10.1103/PhysRevB.77.235315⟩. ⟨hal-00261181v3⟩
  • Pierre Lefebvre, B. Gayral. Optical properties of GaN/AlN quantum dots. Comptes Rendus Physique, Centre Mersenne, 2008, 9, pp.816. ⟨10.1016/j.crhy.2008.10.008⟩. ⟨hal-00389996⟩
  • Stéphane Faure, T. Guillet, P. Lefebvre, T. Bretagnon, B. Gil. Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2008, 78, pp.235323. ⟨10.1103/PhysRevB.78.235323⟩. ⟨hal-00327759⟩
  • F. Ravotti, D. Benoit, P. Lefèbvre, P. Valvin, J.-R. Vaillé, et al.. Time-resolved photoluminescence and optically stimulated luminescence measurements of picosecond-excited SrS:Ce,Sm phosphor. Journal of Applied Physics, American Institute of Physics, 2007, 102 (12), pp.123102. ⟨10.1063/1.2822474⟩. ⟨hal-00327469⟩
  • Maxime Hugues, Mirja Richter, Jean-Michel Chauveau, Benjamin Damilano, Jean-Yves Duboz, et al.. Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots.. Japanese Journal of Applied Physics, part 2 : Letters, Japan Society of Applied Physics, 2007, 46 (14), pp.L317. ⟨10.1143/JJAP.46.L317⟩. ⟨hal-01304760⟩
  • Thierry Bretagnon, Pierre Lefebvre, Thierry Guillet, Thierry Taliercio, Bernard Gil, et al.. Barrier composition dependence of the internal electric field in ZnO∕Zn1−xMgxO quantum wells.. Applied Physics Letters, American Institute of Physics, 2007, 90 (20), pp.201912. ⟨10.1063/1.2740576⟩. ⟨hal-01304724⟩
  • Robert Seguin, Thierry Guillet, T. Taliercio, P. Lefebvre, T. Bretagnon, et al.. Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers. European Physical Journal: Applied Physics, EDP Sciences, 2007, 37, pp.15. ⟨10.1051/epjap:2007006⟩. ⟨hal-00389970⟩
  • Thierry Bretagnon, Pierre Lefebvre, Pierre Valvin, Richard Bardoux, Thierry Guillet, et al.. Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2006, 73 (11), pp.113304. ⟨10.1103/PhysRevB.73.113304⟩. ⟨hal-01304534⟩
  • Bernard Gil, Pierre Lefebvre, Thierry Bretagnon, Thierry Guillet, J.A. Sans, et al.. Spin-exchange interaction in ZnO-based quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2006, 74 (15), pp.153302. ⟨10.1103/PhysRevB.74.153302⟩. ⟨hal-01304535⟩
  • Richard Bardoux, Thierry Guillet, Pierre Lefebvre, Thierry Taliercio, Thierry Bretagnon, et al.. Photoluminescence of single GaN∕AlN hexagonal quantum dots on Si(111): Spectral diffusion effects.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2006, 74 (19), pp.195319. ⟨10.1103/PhysRevB.74.195319⟩. ⟨hal-01304536⟩
  • Soufien Haffouz, Hao Tang, J.A. Bardwell, Pierre Lefebvre, Thierry Bretagnon, et al.. Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template.. Journal of Applied Physics, American Institute of Physics, 2006, 100 (1), pp.013528. ⟨10.1063/1.2214211⟩. ⟨hal-01304537⟩
  • Christian Morhain, Thierry Bretagnon, Pierre Lefebvre, X Tang, Pierre Valvin, et al.. Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2005, 72 (24), pp.241305. ⟨10.1103/PhysRevB.72.241305⟩. ⟨hal-01304048⟩
  • Robert Czernecki, G. Franssen, Tadeusz Suski, T. Swietlik, J. Borysiuk, et al.. Localization Effects in InGaN/GaN Double Heterostructure Laser Diode Structures Grown on Bulk GaN Crystals.. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2005, 44 (Part1 - N°10), pp.7244. ⟨10.1143/JJAP.44.7244⟩. ⟨hal-01304041⟩
  • G. Franssen, S. Grzanka, Robert Czernecki, Tadeusz Suski, L Marona, et al.. Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN∕GaN multiple quantum wells on bulk GaN substrates.. Journal of Applied Physics, American Institute of Physics, 2005, 97 (10), pp.103507. ⟨10.1063/1.1897066⟩. ⟨hal-01304034⟩
  • Sokratis Kalliakos, Thierry Bretagnon, Pierre Lefebvre, Thierry Taliercio, Bernard Gil, et al.. Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes.. Journal of Applied Physics, American Institute of Physics, 2004, 96 (1), pp.180. ⟨10.1063/1.1753085⟩. ⟨hal-01303942⟩
  • Pierre Lefebvre, Sokratis Kalliakos, Thierry Bretagnon, Pierre Valvin, Thierry Taliercio, et al.. Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2004, 69 (3), pp.035307. ⟨10.1103/PhysRevB.69.035307⟩. ⟨hal-01303935⟩
  • T. Taliercio, R. Intartaglia, B. Gil, P. Lefèbvre, T. Bretagnon, et al.. From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2004, 69 (7), pp.073303.1-073303.4. ⟨10.1103/PhysRevB.69.073303⟩. ⟨hal-00330627⟩
  • Sokratis Kalliakos, Pierre Lefebvre, Thierry Taliercio. Nonlinear behavior of photoabsorption in hexagonal nitride quantum wells due to free carrier screening of the internal fields.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2003, 67 (20), pp.205307. ⟨10.1103/PhysRevB.67.205307⟩. ⟨hal-01303911⟩
  • Aurélien Morel, Pierre Lefebvre, Sokratis Kalliakos, Thierry Taliercio, Thierry Bretagnon, et al.. Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2003, 68 (4), pp.045331. ⟨10.1103/PhysRevB.68.045331⟩. ⟨hal-01303919⟩
  • Thierry Bretagnon, Sokratis Kalliakos, Pierre Lefebvre, Pierre Valvin, Bernard Gil, et al.. Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2003, 68 (20), pp.205301. ⟨10.1103/PhysRevB.68.205301⟩. ⟨hal-01303926⟩
  • R. Intartaglia, T. Taliercio, P. Valvin, B. Gil, P. Lefèbvre, et al.. Isoelectronic traps in heavily doped GaAs:(In,N). Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2003, 68 (23), pp.235202.1-235202.5. ⟨10.1103/PhysRevB.68.235202⟩. ⟨hal-00327975⟩
  • Henryk Teisseyre, Tadeusz Suski, S. Lepkowsky, Stéphanie Anceau, Piotr Perlin, et al.. Determination of built-in electric fields in quaternary InAlGaN heterostructures.. Applied Physics Letters, American Institute of Physics, 2003, 82 (10), pp.1541. ⟨10.1063/1.1559948⟩. ⟨hal-01303282⟩
  • Sokratis Kalliakos, Xuebin Zhang, Thierry Taliercio, Pierre Lefebvre, Bernard Gil, et al.. Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes.. Applied Physics Letters, American Institute of Physics, 2002, 80 (3), pp.428. ⟨10.1063/1.1433165⟩. ⟨hal-01303257⟩
  • Eric Frayssinet, Bernard Beaumont, Jean-Pierre Faurie, Pierre Gibart, Zsolt Makkai, et al.. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy.. MRS Internet Journal of Nitride Semiconductor Research, Cambridge University Press (CUP), 2002, 7, pp.8. ⟨hal-01303258⟩
  • Pierre Lefebvre, Stéphanie Anceau, Pierre Valvin, Thierry Taliercio, Leszek Konczewicz, et al.. Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2002, 66 (19), pp.195330. ⟨10.1103/PhysRevB.66.195330⟩. ⟨hal-01303261⟩
  • Pierre Lefebvre, Aurélien Morel, Mathieu Gallart, Thierry Taliercio, Jacques Allègre, et al.. High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.. Applied Physics Letters, American Institute of Physics, 2001, 78 (9), pp.1252. ⟨10.1063/1.1351517⟩. ⟨hal-01303203⟩
  • Pierre Lefebvre, Thierry Taliercio, Aurélien Morel, Jacques Allègre, Mathieu Gallart, et al.. Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.. Applied Physics Letters, American Institute of Physics, 2001, 78 (11), pp.1538. ⟨10.1063/1.1352664⟩. ⟨hal-01303205⟩
  • Bernard Gil, Aurélien Morel, Thierry Taliercio, Pierre Lefebvre, C.T. Foxon, et al.. Carrier relaxation dynamics for As defects in GaN.. Applied Physics Letters, American Institute of Physics, 2001, 79 (1), pp.69. ⟨10.1063/1.1380400⟩. ⟨hal-01303208⟩
  • Thierry Taliercio, Mathieu Gallart, Pierre Lefebvre, Aurélien Morel, Bernard Gil, et al.. Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.. Solid State Communications, Elsevier, 2001, 117 (7), pp.445. ⟨10.1016/S0038-1098(00)00475-0⟩. ⟨hal-01302922⟩
  • Xuebin Zhang, Thierry Taliercio, Sokratis Kalliakos, Pierre Lefebvre. Influence of electron-phonon interaction on the optical properties of III nitride semiconductors.. Journal of Physics: Condensed Matter, IOP Publishing, 2001, 13 (32), pp.7053. ⟨10.1088/0953-8984/13/32/312⟩. ⟨hal-01303256⟩
  • Thierry Taliercio, Pierre Lefebvre, Aurélien Morel, Bernard Gil. Optical properties of group-III nitride quantum wells and quantum boxes.. Journal of Physics: Condensed Matter, IOP Publishing, 2001, 13 (32), pp.7027. ⟨10.1088/0953-8984/13/32/310⟩. ⟨hal-01303255⟩
  • Pierre Bigenwald, Alexey Kavokin, Bernard Gil, Pierre Lefebvre. Exclusion principle and screening of excitons in GaN/AlxGa1−xN quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2001, 63 (3), pp.035315. ⟨10.1103/PhysRevB.63.035315⟩. ⟨hal-01303201⟩
  • Thierry Taliercio, Pierre Lefebvre, Vincent Calvo, Noël Magnéa, Henry Mathieu, et al.. Excitons and Trions Confined on CdTe Nano-Islands: Optical Tuning of the Dielectric Response.. physica status solidi (b), Wiley, 2000, 220 (2), pp.875. ⟨10.1002/(SICI)1521-3951(200008)220:2<875::AID-PSSB875>3.0.CO;2-W⟩. ⟨hal-01302898⟩
  • Bernard Gil, Pierre Lefebvre, Hadis Morkoc. Strain effects in GaN epilayers.. Comptes rendus de l’Académie des sciences. Série IV, Physique, astrophysique, Elsevier, 2000, 1 (1), pp.51. ⟨10.1016/S1296-2147(00)00101-3⟩. ⟨hal-01302886⟩
  • Pierre Bigenwald, Alexey Kavokin, Bernard Gil, Pierre Lefebvre. Electron-hole plasma effect on excitons in GaN/AlxGa1−xN quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2000, 61 (23), pp.15621. ⟨10.1103/PhysRevB.61.15621⟩. ⟨hal-01302903⟩
  • Nicolas Grandjean, Benjamin Damilano, Jean Massies, Gérard Neu, M Teissere, et al.. Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate.. Journal of Applied Physics, American Institute of Physics, 2000, 88 (1), pp.183. ⟨10.1063/1.373640⟩. ⟨hal-01302893⟩
  • Philippe Christol, P. Bigenwald, A. Kavokin, B. Gil, P. Lefebvre. Highly Photo-Excited Nitride Quantum Wells: Threshold for Exciton Bleaching. physica status solidi (b), Wiley, 1999, 216 (1), pp.481 - 486. ⟨10.1002/(SICI)1521-3951(199911)216:1<481::AID-PSSB481>3.0.CO;2-K⟩. ⟨hal-01756604⟩
  • Tj Ochalski, Bernard Gil, Pierre Lefebvre, Nicolas Grandjean, Mathieu Leroux, et al.. Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN.. Applied Physics Letters, American Institute of Physics, 1999, 74 (22), pp.3353. ⟨10.1063/1.123342⟩. ⟨hal-01302666⟩
  • Bernard Gil, Pierre Lefebvre, Jacques Allègre, Henry Mathieu, Nicolas Grandjean, et al.. Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1999, 59 (15), pp.10246. ⟨10.1103/PhysRevB.59.10246⟩. ⟨hal-01302655⟩
  • Mathieu Leroux, Nicolas Grandjean, Jean Massies, Bernard Gil, Pierre Lefebvre, et al.. Barrier-width dependence of group-III nitrides quantum-well transition energies.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1999, 60 (3), pp.1496. ⟨10.1103/PhysRevB.60.1496⟩. ⟨hal-01302659⟩
  • B. Gil, P. Lefebvre, J. Allègre, H. Mathieu, N. Grandjean, et al.. Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1999, 59 (15), pp.10246 - 10250. ⟨10.1103/PhysRevB.59.10246⟩. ⟨hal-01756619⟩
  • Pierre Lefebvre, Jacques Allègre, Bernard Gil, Henry Mathieu, Nicolas Grandjean, et al.. Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1999, 59 (23), pp.15363. ⟨10.1103/PhysRevB.59.15363⟩. ⟨hal-01302335⟩
  • Tj Ochalski, Bernard Gil, Pierre Lefebvre, N. Grandjean, J. Massies, et al.. Photoreflectance spectroscopy as a powerful tool for the investigation of GaN-AlGaN quantum well structures. Solid State Communications, Elsevier, 1999, 109, pp.567-571. ⟨hal-00546569⟩
  • Axel Göldner, Axel Hoffmann, Bernard Gil, Pierre Lefebvre, Pierre Bigenwald, et al.. Microcalorimetric absorption spectroscopy in GaN–AlGaN quantum wells. Materials Science and Engineering: B, Elsevier, 1999, 59 (1-3), pp.319 - 322. ⟨10.1016/S0921-5107(98)00363-8⟩. ⟨hal-01756610⟩
  • Vincent Calvo, Noël Magnéa, Thierry Taliercio, Pierre Lefebvre, Jacques Allègre, et al.. Optical properties versus growth conditions of CdTe submonolayers inserted in ZnTe quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1998, 58 (23), pp.15736. ⟨10.1103/PhysRevB.58.15736⟩. ⟨hal-01302330⟩
  • Mathieu Leroux, Nicolas Grandjean, M. Laügt, Jean Massies, Bernard Gil, et al.. Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1998, 58 (20), pp.R13371. ⟨10.1103/PhysRevB.58.R13371⟩. ⟨hal-01291688⟩
  • Mohammed Rezki, A.M. Vasson, Aime Vasson, Pierre Lefebvre, Vincent Calvo, et al.. Optical studies of ultrashort-period GaAs/AlAs superlattices grown on (In,Ga)As pseudosubstrate.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1998, 58 (12), pp.R7540. ⟨10.1103/PhysRevB.58.R7540⟩. ⟨hal-01288966⟩
  • Thierry Taliercio, Pierre Lefebvre, Vincent Calvo, Denis Scalbert, Noël Magnéa, et al.. Charged excitons trapped on monomolecular CdTe islands in wide ZnTe-(Zn,Mg)Te quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1998, 58 (23), pp.15408. ⟨10.1103/PhysRevB.58.15408⟩. ⟨hal-01302334⟩
  • Pierre Lefebvre, Jacques Allègre, Bernard Gil, Alexei Kavokin, Henry Mathieu, et al.. Recombination dynamics of free and localized excitons in GaN/Ga0.93Al0.07N quantum wells. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1998, 57 (16), pp.R9447. ⟨10.1103/PhysRevB.57.R9447⟩. ⟨hal-01287782⟩
  • Christian Tanguy, Pierre Lefebvre, Henry Mathieu, R.J. Elliott. Analytical model for the refractive index in quantum wells derived from the complex dielectric constant of Wannier excitons in noninteger dimensions.. Journal of Applied Physics, American Institute of Physics, 1997, 82 (2), pp.798. ⟨10.1063/1.365580⟩. ⟨hal-01260885⟩
  • Pierre Lefebvre, Henry Mathieu, Jacques Allègre, Tristan Richard, Anne Combette-Roos, et al.. Dynamics of photoluminescence in medium-size CdSe quantum crystallites.. Semiconductor Science and Technology, IOP Publishing, 1997, 12 (8), pp.958. ⟨10.1088/0268-1242/12/8/005⟩. ⟨hal-01260896⟩
  • Stephan Glutsch, Pierre Lefebvre, Daniel S. Chemla. Optical absorption of type-II superlattices.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1997, 55 (23), pp.15786. ⟨10.1103/PhysRevB.55.15786⟩. ⟨hal-01237153⟩
  • Pierre Lefebvre, Vincent Calvo, Noël Magnéa, Thierry Taliercio, Jacques Allègre, et al.. Optical investigation of CdTe monomolecular islands in wide ZnTe/(Zn,Mg)Te quantum wells: Evidence of a vertical self-ordering.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1997, 56 (7), pp.3907. ⟨10.1103/PhysRevB.56.3907⟩. ⟨hal-01260891⟩
  • Pierre Lefebvre, Vincent Calvo, Noël Magnéa, Thierry Taliercio, Jacques Allègre, et al.. Distinct center-of-mass quantization of light-hole and heavy-hole excitons in wide ZnTe-(Zn,Mg)Te quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1997, 56 (16), pp.R10040. ⟨10.1103/PhysRevB.56.R10040⟩. ⟨hal-01260899⟩
  • Vincent Calvo, Pierre Lefebvre, Jacques Allègre, A. Bellabchara, Henry Mathieu, et al.. Evidence of the ordered growth of monomolecular ZnTe islands in CdTe/(Cd,Zn)Te quantum wells on a nominal (001) surface.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1996, 53 (24), pp.R16164. ⟨10.1103/PhysRevB.53.R16164⟩. ⟨hal-01233762⟩
  • A.V. Kavokin, M.A. Kaliteevski, S.V Goupalov, J.D. Berger, O. Lyngnes, et al.. Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1996, 54 (16), pp.R11078. ⟨10.1103/PhysRevB.54.R11078⟩. ⟨hal-01233781⟩
  • Tristan Richard, Pierre Lefebvre, Henry Mathieu, Jacques Allègre. Effects of finite spin-orbit splitting on optical properties of spherical semiconductor quantum dots.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1996, 53 (11), pp.7287. ⟨10.1103/PhysRevB.53.7287⟩. ⟨hal-01179203⟩
  • Pierre Lefebvre, Tristan Richard, Jacques Allègre, Henry Mathieu, Anne Combette-Roos, et al.. Measurement of the optical band gap and crystal-field splitting in wurtzite CdTe.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1996, 53 (23), pp.15440. ⟨10.1103/PhysRevB.53.15440⟩. ⟨hal-01179205⟩
  • Pierre Lefebvre, Tristan Richard, Henry Mathieu, Jacques Allègre. Influence of spin-orbit split-off band on optical properties of spherical semiconductor nanocrystals. The case of CdTe.. Solid State Communications, Elsevier, 1996, 98 (4), pp.303. ⟨10.1016/0038-1098(96)00044-0⟩. ⟨hal-01233756⟩
  • Pierre Lefebvre, Philippe Christol, Henry Mathieu, Glutsch Stephan. Confined excitons in semiconductors: Correlation between binding energy and spectral absorption shape.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1995, 52 (8), pp.5756. ⟨10.1103/PhysRevB.52.5756⟩. ⟨hal-01178748⟩
  • Henry Mathieu, Tristan Richard, Jacques Allègre, Pierre Lefebvre, Gérald Arnaud, et al.. Quantum confinement effects of CdS nanocrystals in a sodium borosilicate glass prepared by the sol-gel process.. Journal of Applied Physics, American Institute of Physics, 1995, 77 (1), pp.287. ⟨10.1063/1.359389⟩. ⟨hal-01178746⟩
  • Pierre Lefebvre, Philippe Christol, Henry Mathieu. Universal formulation of excitonic linear absorption spectra in all semiconductor microstructures. Superlattices and Microstructures, Elsevier, 1995, 17 (1), pp.19 - 21. ⟨10.1006/spmi.1995.1005⟩. ⟨hal-01756638⟩
  • Philippe Christol, Pierre Lefebvre, Henry Mathieu. Universal formulation of excitonic linear absorption spectra in all semiconductor microstructures. Superlattices and Microstructures, Elsevier, 1995, 17 (1), pp.19 - 21. ⟨10.1006/spmi.1995.1005⟩. ⟨hal-01756184⟩
  • A. Bellabchara, Pierre Lefebvre, Philippe Christol, Henry Mathieu. Improved modeling of excitons in type-II semiconductor heterostructures by use of a three-dimensional variational function.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1994, 50 (16), pp.11840. ⟨10.1103/PhysRevB.50.11840⟩. ⟨hal-01176125⟩
  • Philippe Christol, Pierre Lefebvre, Henry Mathieu. A single equation describes excitonic absorption spectra in all quantum-sized semiconductors.. IEEE Journal of Quantum Electronics, Institute of Electrical and Electronics Engineers, 1994, 30 (10), pp.2287. ⟨10.1109/3.328597⟩. ⟨hal-01176124⟩
  • Philippe Christol, Pierre Lefebvre, Henry Mathieu. Fractional‐dimensional calculation of exciton binding energies in semiconductor quantum wells and quantum‐well wires.. Journal of Applied Physics, American Institute of Physics, 1993, 74 (9), pp.5626. ⟨10.1063/1.354224⟩. ⟨hal-01176107⟩
  • Philippe Christol, P. Lefebvre, H. Mathieu. Low dimensionality semiconductors: modelling of excitons via a fractional-dimensional space. Journal de Physique III, EDP Sciences, 1993, 3 (9), pp.1783 - 1789. ⟨10.1051/jp3:1993237⟩. ⟨hal-01756634⟩
  • Philippe Christol, P. Lefebvre, H. Mathieu. Low dimensionality semiconductors: modelling of excitons via a fractional-dimensional space. Journal de Physique III, EDP Sciences, 1993, 3 (9), pp.1783-1789. ⟨10.1051/jp3:1993237⟩. ⟨jpa-00249040⟩
  • P. Lefebvre, Philippe Christol, H. Mathieu. General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality. Journal de Physique IV Proceedings, EDP Sciences, 1993, 03 (C5), pp.C5-377-C5-380. ⟨10.1051/jp4:1993579⟩. ⟨jpa-00251666⟩
  • P. Lefebvre, Philippe Christol, H. Mathieu. General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality. Journal de Physique IV Proceedings, EDP Sciences, 1993, 03 (C5), pp.377 - 380. ⟨10.1051/jp4:1993579⟩. ⟨hal-01756636⟩
  • Pierre Lefebvre, Philippe Christol, Henry Mathieu. Unified formulation of excitonic absorption spectra of semiconductor quantum wells, superlattices, and quantum wires.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1993, 48 (23), pp.17308. ⟨10.1103/PhysRevB.48.17308⟩. ⟨hal-01176109⟩
  • Bernard Gil, Pierre Lefebvre, Bonnel Philippe, Henry Mathieu, Christiane Deparis, et al.. Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1993, 47 (4), pp.1954. ⟨10.1103/PhysRevB.47.1954⟩. ⟨hal-01176102⟩
  • Henry Mathieu, Pierre Lefebvre, Philippe Christol. Excitons in semiconductor quantum wells: A straightforward analytical calculation. Journal of Applied Physics, American Institute of Physics, 1992, 72 (1), pp.300. ⟨10.1063/1.352137⟩. ⟨hal-01175835⟩
  • A. Georgakilas, Christou A., Pierre Lefebvre, Jacques Allègre, K. Zekentes, et al.. Optical properties of InGaAs films embedded in plasma etched InP wells.. Applied Physics Letters, American Institute of Physics, 1992, 61 (7), pp.798. ⟨10.1063/1.107805⟩. ⟨hal-01176049⟩
  • Henry Mathieu, Pierre Lefebvre, Philippe Christol. Simple analytical method for calculating exciton binding energies in semiconductor quantum wells. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1992, 46 (7), pp.4092. ⟨10.1103/PhysRevB.46.4092⟩. ⟨hal-01175849⟩
  • Bernard Gil, L.K. Howard, David J. Dunstan, Boring Philippe, Pierre Lefebvre. Influence of the spin-orbit split-off valence band in InGaAs/AlGaAs strained-layer quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1992, 45 (7), pp.3906. ⟨10.1103/PhysRevB.45.3906⟩. ⟨hal-01175827⟩
  • Pierre Lefebvre, Philippe Christol, Henry Mathieu. Excitons in semiconductor superlattices: Heuristic description of the transfer between Wannier-like and Frenkel-like regimes.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1992, 46 (20), pp.13603. ⟨10.1103/PhysRevB.46.13603⟩. ⟨hal-01176050⟩
  • Arnaud Gérald, Jacques Allègre, Pierre Lefebvre, Henry Mathieu, L.K. Howard, et al.. Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1992, 46 (23), pp.15290. ⟨10.1103/PhysRevB.46.15290⟩. ⟨hal-01176053⟩
  • M. Averous, B Bertho, B Boiron, B Boring, Thierry Cloitre, et al.. Hetero- and multi-quantum well structures in wide-gap II-VI semiconductors. Semiconductor Science and Technology, IOP Publishing, 1991, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 6 (9A), pp.A1 - A7. ⟨10.1088/0268-1242/6/9A/001⟩. ⟨hal-01817883⟩
  • Pierre Lefebvre, Bonnel Philippe, Bernard Gil, Henry Mathieu. Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1991, 44 (11), pp.5635. ⟨10.1103/PhysRevB.44.5635⟩. ⟨hal-01175824⟩
  • Bernard Gil, Pierre Lefebvre, P. Boring, Karen J. Moore, Geoffrey Duggan, et al.. Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1991, 44 (4), pp.1942. ⟨10.1103/PhysRevB.44.1942⟩. ⟨hal-01175678⟩
  • Bonnel Philippe, Pierre Lefebvre, Bernard Gil, Henry Mathieu, Christiane Deparis, et al.. Reflectance study of inter-well couplings in GaAs-(Ga,Al)As double quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1990, 42 (6), pp.3435. ⟨10.1103/PhysRevB.42.3435⟩. ⟨hal-01175677⟩
  • Youness El Khalifi, Pierre Lefebvre, Jacques Allègre, Bernard Gil, Henry Mathieu, et al.. Electronic structure of (1 1 3)-grown GaAs-(GaAl)As single quantum wells under biaxial strain fields.. Solid State Communications, Elsevier, 1990, 75 (8), pp.677. ⟨10.1016/0038-1098(90)90223-X⟩. ⟨hal-01175668⟩
  • Pierre Lefebvre, Bernard Gil, Henry Mathieu, Planel Richard. Piezospectroscopy of GaAs-AlAs superlattices.. Physical Review B: Condensed Matter (1978-1997), American Physical Society, 1989, 40 (11), pp.7802. ⟨10.1103/PhysRevB.40.7802⟩. ⟨hal-01175666⟩
  • Pierre Lefebvre, Bernard Gil, Henry Mathieu, Planel Richard. Symmetry of conduction states for GaAs-AlAs type II superlattices from uniaxial stress.. Physical Review B: Condensed Matter (1978-1997), American Physical Society, 1989, 39 (8), pp.5550. ⟨10.1103/PhysRevB.39.5550⟩. ⟨hal-01175665⟩
  • Henry Mathieu, Jacques Allègre, A Chatt, Pierre Lefebvre, Jp Faurie. Band offset and lattice mismatch effects in strained-layer CdTe-ZnTe superlattices.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1988, 38 (11), pp.9. ⟨10.1103/PhysRevB.38.7740⟩. ⟨hal-01175590⟩
  • Pierre Lefebvre, Bernard Gil, J.P Lascaray, Henry Mathieu, Dieter Bimberg, et al.. Magnetoexcitons in a narrow single GaAs-Ga0.5Al0.5As quantum well grown by Molecular Beam Epitaxy.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1988, 37 (8), pp.4. ⟨10.1103/PhysRevB.37.4171⟩. ⟨hal-01175578⟩
  • Yong Chen, Bernard Gil, Pierre Lefebvre, Henry Mathieu. Exchange effects on excitons in quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1988, 37 (11), pp.4. ⟨10.1103/PhysRevB.37.6429⟩. ⟨hal-01175568⟩
  • Bernard Gil, Pierre Lefebvre, Henry Mathieu, G. Platero, M. Altarelli, et al.. Reflectance spectroscopy on GaAs-Ga0.5Al0.5As single quantum wells, under in-plane uni¬axial stress, at liquid helium temperature.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1988, 38 (2), pp.6. ⟨10.1103/PhysRevB.38.1215⟩. ⟨hal-01175583⟩
  • P. Lefebvre, B. Gil, H. Mathieu. Microstructures III-V sous pression hydrostatique. Revue de Physique Appliquee, 1987, 22 (8), pp.859-866. ⟨10.1051/rphysap:01987002208085900⟩. ⟨jpa-00245624⟩
  • B. Gil, Y. Chen, P. Lefebvre, H. Mathieu. FINE STRUCTURE OF EXCITONS IN QUANTUM WELLS. Journal de Physique Colloques, 1987, 48 (C5), pp.C5-549-C5-552. ⟨10.1051/jphyscol:19875118⟩. ⟨jpa-00226701⟩
  • Henry Mathieu, Pierre Lefebvre, Jacques Allègre, Bernard Gil, A. Regreny. Differential spectroscopy of GaAs-Ga1-xAlxAs quantum wells : an unambiguous identifica¬tion of light-hole and heavy-hole states.. Physical Review B: Condensed Matter (1978-1997), American Physical Society, 1987, 36 (12), pp.4. ⟨10.1103/PhysRevB.36.6581⟩. ⟨hal-01175558⟩
  • Pierre Lefebvre, Bernard Gil, Henry Mathieu. Effect of hydrostatic pressure on GaAs-Ga1-xAlxAs microstructures.. Physical Review B: Condensed Matter (1978-1997), American Physical Society, 1987, 35 (11), pp.5. ⟨10.1103/PhysRevB.35.5630⟩. ⟨hal-01175550⟩
  • Pierre Lefebvre, Bernard Gil, Jacques Allègre, Henry Mathieu, Raisin Claude. Nonparabolic behavior of GaSb-AlSb quantum wells under hydrostatic pressure.. Physical Review B: Condensed Matter (1978-1997), American Physical Society, 1987, 35 (3), pp.6. ⟨10.1103/PhysRevB.35.1230⟩. ⟨hal-01175485⟩

Conference papers99 documents

  • Maria Vladimirova, François Chiaruttini, Thierry Guillet, Christelle Brimont, Benoit Jouault, et al.. Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures. 13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States. ⟨hal-02466858⟩
  • Maria Vladimirova, François Chiaruttini, Thierry Guillet, Christelle Brimont, Pierre Lefebvre, et al.. Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures. 5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia. ⟨hal-02466887⟩
  • Thierry Guillet, François Chiaruttini, Christelle Brimont, Thierry Bretagnon, Laetitia Doyennette, et al.. Phase transition of indirect excitons in GaN quantum wells.. International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan. ⟨hal-01910225⟩
  • François Chiaruttini, Thierry Guillet, Christelle Brimont, Thierry Bretagnon, Laetitia Doyennette, et al.. Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.. International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France. ⟨hal-01907806⟩
  • Masha Vladimirova, Thierry Guillet, Benoit Jouault, Christelle Brimont, Denis Scalbert, et al.. Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.. International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany. ⟨hal-01908565⟩
  • Maria Vladimirova, Thierry Guillet, Christelle Brimont, Pierre Lefebvre, Thierry Bretagnon, et al.. Indirect excitons in polar GaN/(AlGa)N quantum wells. International school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia. ⟨hal-01932812⟩
  • Maria Vladimirova, Thierry Guillet, Christelle Brimont, Denis Scalbert, Benoit Jouault, et al.. On the nature of light emission in polar GaN/(AlGa)N quantum wells. International Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece. ⟨hal-01932705⟩
  • Thierry Guillet, Benoit Jouault, Fedor Fedichkin, Pierre Lefebvre, Christelle Brimont, et al.. Transport of indirect excitons in GaN quantum wells.. International Workshop on Nitride Semiconductors (IWN 2016), Alan Doolittle, Tomás Palacios, Stacia Keller, Siddharth Rajan, Oct 2016, Orlando, United States. ⟨hal-01388983⟩
  • Maria Vladimirova, Benoit Jouault, Fedor Fedichkin, Thierry Guillet, Christelle Brimont, et al.. Indirect excitons in AlGaN/GaN polar quantum wells.. 17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17., Yasuhiko Arakawa, Mar 2016, Nara, Japan. ⟨hal-01388908⟩
  • Fedor Fedichkin, Benoit Jouault, Thierry Guillet, Christelle Brimont, Pierre Valvin, et al.. Indirect excitons in polar group III nitride quantum wells.. 8th International Conference on Materials Science and Condensed Matter Physics, Leonid Kulyuk, Sep 2016, Chisinau, Moldova. ⟨hal-01388929⟩
  • Tadeusz Suski, Grzegorz Staszczak, Pierre Lefebvre, Krzysztof Piotr Korona, Piotr Drozdz, et al.. Searching for Indirect Excitons in Coupled Double InGaN/GaN Quantum Wells. International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States. ⟨hal-01389862⟩
  • Julien Barjon, Pierre Valvin, Christelle Brimont, Pierre Lefebvre, Ovidiu Brinza, et al.. Picosecond dynamics of free and bound excitons in doped diamond. Hasselt Diamond Workshop 2016 - SBDD XXI, Miloš Nesládek, Mar 2016, Hasselt, Belgium. ⟨10.1103/PhysRevB.93.115202⟩. ⟨hal-01306898⟩
  • Pierre Lefebvre. “Naturally” indirect excitons in wide band-gap semiconductor quantum wells.. INDEX International School on the Physics of Indirect Excitons , Guillaume Malpuech; Masha Vladimirova, Mar 2015, Les Houches, France. ⟨hal-01305086⟩
  • Fedor Fedichkin, Benoit Jouault, Maria Vladimirova, Thierry Guillet, Christelle Brimont, et al.. Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates.. Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference, François Dubin, ICFO (ES); Vittorio Pellegrini, Scuola Normale Superiore & IIT (IT); Aron Pinczuk, Columbia University (USA); David Ritchie, University of Cambridge (UK); Massimo Rontani, Cnr Nano (IT); Thomas Satzoukidis, Scuola Normale Superiore (IT); Masha Vladimirova, CNRS (FR), Sep 2015, Pise, Italy. ⟨hal-01305122⟩
  • Fedor Fedichkin, Benoit Jouault, Thierry Guillet, Christelle Brimont, Pierre Valvin, et al.. Indirect excitons in wide band gap semiconductors.. International School on Nanophotonics and Photovoltaics. INSP 2015., MISP : Mediterranean Institute of Fundamental Physics, Sep 2015, Cefalu, Italy. ⟨hal-01389731⟩
  • Manuel Lopez-Ponce, Atsushi Nakamura, M. Suzuki, J. Temmyo, S. Agouram, et al.. ZnCdO/ZnO multiple quantum well nanowires emitting in the visible.. 8th International Workshop on Zinc Oxide and Related Materials - IWZnO 2014., Sep 2014, Niagara Falls, Canada. ⟨hal-01305424⟩
  • Pierre Corfdir, Oliver Brandt, Pierre Lefebvre. Impact of surface and internal electrical fields on the properties of donor atoms in GaN nanowires. . International Workshop on Nitride Semiconductors – IWN 2014., Tadeusz Suski; Detlef Hommel, Aug 2014, Wroclaw, Poland. ⟨hal-01305403⟩
  • Fedor Fedichkin, Benoit Jouault, Peristera Andreakou, Pierre Valvin, Maria Vladimirova, et al.. Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.. 15th conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN15), Bernard Gil, Jun 2014, Montpellier, France. ⟨hal-01305383⟩
  • Pierre Lefebvre. Spatio-Temporal Dynamical Properties of Naturally Indirect Excitons in Polar Nitride Quantum Wells.. European Materials Research Society (E-MRS) Srping Meeting. Symposium L: Group III Nitrides., European Materials Research Society (E-MRS), May 2013, Strasbourg, France. ⟨hal-00796426⟩
  • S. Albert, A. Bengoechea-Encabo, F. Barbagini, D. López-Romero, M. A. Sanchez-García, et al.. Advances on MBE Selective Area Growth of III- Nitride nanostructures: from nanoLEDs to pseudo substrates.. Workshop on Frontier Electronics - WOFE., Chairman: M.Shur - Rensselaer Polytechnic Institute,Troy, NY, USA, Dec 2013, San Juan, Puerto Rico. pp.1450020, ⟨10.1142/S0129156414500207⟩. ⟨hal-01081163⟩
  • Pierre Corfdir, Amélie Dussaigne, Mehran Shahmohammadi, Henryk Teisseyre, Tadeusz Suski, et al.. Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells. E-MRS Fall Meeting, European Materials Society, Sep 2013, Varsovie, Poland. ⟨hal-01306226⟩
  • Pierre Corfdir, Amélie Dussaigne, Mehran Shahmohammadi, Henryk Teisseyre, Tadeusz Suski, et al.. Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells.. E-MRS Fall Meeting, Sep 2013, Varsovie, Poland. ⟨hal-01907907⟩
  • Manuel Lopez-Ponce, A. Hierro, J.-M. Ulloa, Pierre Lefebvre, E. Muñoz, et al.. Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD.. International Workshop on ZnO and Related Materials., Sep 2012, Nice, France. ⟨hal-00708700⟩
  • Pierre Corfdir, Pierre Lefebvre. Excitonic effects in GaN stacking faults and crystal phase quantum wells. UK Semiconductors 2012, Jul 2012, Sheffield, United Kingdom. ⟨hal-00708658⟩
  • Pierre Corfdir, E. Giraud, J. Levrat, G. Rossbach, R. Butté, et al.. Impact of biexcitons on the formation of polariton condensates in III-nitride based multiple quantum well microcavities.. International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan. ⟨hal-00708717⟩
  • Pierre Lefebvre. Analysis and control of emission properties of InGaN-on-GaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.. SPIE-Photonic West-OPTO. "Gallium Nitride Materials and Devices VII". (Conference 8262)., Jan 2012, San Francisco, United States. ⟨hal-00708483⟩
  • Pierre Corfdir, Amelie Dussaigne, Henryk Teisseyre, Tadeusz Suski, Izabella Grzegory, et al.. Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates. International Workshop on Nitride semiconductors., Oct 2012, Sapporo, Japan. pp.08JC01, ⟨10.7567/JJAP.52.08JC01⟩. ⟨hal-01179181⟩
  • Pierre Corfdir, Amélie Dussaigne, H. Teisseyre, Tadeusz Suski, Izabella Grzegory, et al.. Purely radiative recombinations and thermal carrier emission in nonpolar (Al,Ga)N/GaN quantum wells.. International Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland. ⟨hal-00708669⟩
  • Pierre Corfdir, Amélie Dussaigne, H. Teisseyre, Tadeusz Suski, Izabella Grzegory, et al.. Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the a-facet of GaN crystals.. International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan. ⟨hal-00708711⟩
  • Pierre Corfdir, J. Levrat, G. Rossbach, R. Butté, E. Feltin, et al.. Biexciton-Assisted Relaxation Mechanisms In III-Nitride Based Multi-Quantum Well Microcavities.. 9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom. ⟨hal-00631761⟩
  • Steven Albert, Pierre Lefebvre, J. Grandal, M.A. Sanchez-Garcia, E. Calleja. Emission Control of InGaN Nanocolumns on Si(111) substrates Grown by MBE .. 9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom. ⟨hal-00631744⟩
  • Pierre Corfdir, Pierre Lefebvre, Amélie Dussaigne, Laurent Balet, Samuel Sonderegger, et al.. Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in GaN and GaN based heterostructures . Cathodo-luminescence 2011. , Oct 2011, Gaithersburg, MD, United States. ⟨hal-01306660⟩
  • Steven Albert, Pierre Lefebvre, J. Grandal, M.A. Sanchez-Garcia, E. Calleja. MBE growth and characterization of InGaN nanocolumns on Silicon substrates.. European Materials Research Society Spring Meeting., May 2011, Nice, France. ⟨hal-00632236⟩
  • Pierre Lefebvre. Surface-related optical properties of GaN and InGaN nanocolumns.. European Materials Research Society Spring Meeting., May 2011, Nice, France. ⟨hal-00631334⟩
  • Pierre Corfdir, J. Levrat, R. Butté, E. Feltin, J.F. Carlin, et al.. Direct observation of biexciton localization dynamics in (Al,Ga)N/GaN multi quantum wells.. 38th International Symposium on Compound Semiconductors - ISCS 2011., May 2011, Berlin, Germany. ⟨hal-00797375⟩
  • Miguel A. Sanchez-Garcia, Steven Albert, Ana Bengoechea-Encabo, Pierre Lefebvre, E. Calleja, et al.. MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates.. 2011 German-Japanese-Spanish Joint Workshop on Frontiers in Photonic and Electronic Materials and Devices, Elias Muñoz, Mar 2011, Grenade, Spain. ⟨hal-01306674⟩
  • E. Calleja, Ana Bengoechea-Encabo, Steven Albert, M.A. Sanchez-Garcia, Francesca Barbagini, et al.. Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics.. 11th International Conference on Light-Matter Coupling in Nanostructures, PLMCN11, Apr 2011, Berlin, Germany. ⟨hal-00632240⟩
  • Ana Bengoechea-Encabo, Steven Albert, Francesca Barbagini, Pierre Lefebvre, M.A. Sanchez-Garcia, et al.. Control of the Morphology on Selective Area Growth of GaN Nanocolumns by Rf-Plasma-Assisted MBE.. 9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom. ⟨hal-00631606⟩
  • Steven Albert, Ana Bengoechea-Encabo, Francesca Barbagini, Pierre Lefebvre, M.A. Sanchez-Garcia, et al.. Selective area growth of GaN nanocolumns by rf-plasma assisted MBE at low temperature and under nitrogen-rich conditions.. 9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom. ⟨hal-00631745⟩
  • Steven Albert, Ana Bengoechea-Encabo, M.A. Sanchez-Garcia, Francesca Barbagini, E. Calleja, et al.. Efficient phosphor-free, white light emission by using ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE.. Workshop on Frontier Electronics - WOFE 7, Dec 2011, San Juan, Puerto Rico. pp.1250010, ⟨10.1142/S0129156412500103⟩. ⟨hal-00656647⟩
  • Francesca Barbagini, Ana Bengoechea-Encabo, Steven Albert, Pierre Lefebvre, Javier Martinez, et al.. E-beam nanopatterning for the ordered growth of GaN/InGaN nanorods.. 37th International Conference on Micro and Nano Engineering (MNE 2011)., Sep 2011, Berlin, Germany. pp.374, ⟨10.1016/j.mee.2012.07.024⟩. ⟨hal-00726087⟩
  • P. Corfdir, Pierre Lefebvre, Amélie Dussaigne, Laurent Balet, Samuel Sonderegger, et al.. Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in a-Plane (Al,Ga)N/GaN Quantum Wells.. Microscopy and Microanalysis 2011, Aug 2011, Nashville, Tennessee., United States. pp.1868-1869, ⟨10.1017/S143192761101021X⟩. ⟨hal-00796090⟩
  • Pierre Corfdir, Pierre Lefebvre, Amélie Dussaigne, Laurent Balet, Samuel Sonderegger, et al.. Exciton dynamics in a-plane (Al,Ga)N/GaN single quantum wells grown by molecular beam epitaxy on ELO-GaN.. International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States. ⟨hal-00633490⟩
  • Pierre Lefebvre. Internal efficiency of LEDs: An application of Quantum Mechanics.. ForumLED - Europe 2010, Dec 2010, Lyon, France. ⟨hal-00634063⟩
  • Pierre Lefebvre, Steven Albert, J. Ristic, M.A. Sanchez-Garcia, E. Calleja. Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy.. International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States. ⟨hal-00633510⟩
  • Samuel Sonderegger, P. Corfdir, Laurent Balet, T. Zhu, Amélie Dussaigne, et al.. Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures.. Microscopy and Microanalysis (M&M) 2010, Aug 2010, Portland, United States. pp.500, ⟨10.1017/S1431927610058162⟩. ⟨hal-00741055⟩
  • Pierre Corfdir, Pierre Lefebvre, Jean-Daniel Ganière, Benoit Deveaud-Plédran. Distortion of donor properties in III-nitride based nano-scale systems.. International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States. ⟨hal-00633495⟩
  • Ana Bengoechea-Encabo, J. Grandal, S. Fernandez-Garrido, M.A. Sanchez-Garcia, Francesca Barbagini, et al.. Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE.. 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany. ⟨hal-00633529⟩
  • E. Calleja, Ana Bengoechea-Encabo, J. Grandal, S. Fernandez-Garrido, M.A. Sanchez-Garcia, et al.. On the spontaneous and ordered growth of III-N nanocolumns: growth on nonpolar substrates and applications to Optoelectronic Devices.. 39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland. ⟨hal-00634066⟩
  • E. Calleja, Ana Bengoechea-Encabo, J. Grandal, S. Fernandez-Garrido, J. Ristic, et al.. Spontaneous and ordered growth of III-N nanocolumns: growth mechanisms and applications to Optoelectronic Devices.. International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States. ⟨hal-00633516⟩
  • Samuel Sonderegger, Pierre Corfdir, Laurent Balet, J. Ristic, Pierre Lefebvre, et al.. Picosecond time-resolved cathodoluminescence to study GaN based materials. 2nd GCOE International Symposium on Photonics and Electronics Science and Engineering, Mar 2009, Kyoto, Japan. ⟨hal-00797197⟩
  • Pierre Corfdir, Pierre Lefebvre, J. Ristic, Samuel Sonderegger, Laurent Balet, et al.. Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.. Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea. ⟨hal-00797195⟩
  • Thierry Guillet, Richard Bardoux, Thierry Bretagnon, Bernard Gil, Pierre Lefebvre, et al.. Polarized emission from a single GaN/AlN quantum dot : Experiment and theory. Journées Boîtes Quantiques, Jun 2009, Grenoble, France. ⟨hal-00633306⟩
  • Thierry Bretagnon, Thierry Guillet, Pierre Lefebvre, Bernard Gil, Christian Morhain. Effect of the internal electric field on excitonic transitions in ZnO/(Zn,Mg)O quantum wells.. 9th Physics of Light-Matter Coupling and Nanostructures - PLMCN., Apr 2009, Lecce, Italy. ⟨hal-00797192⟩
  • P. Corfdir, J. Ristic, Pierre Lefebvre, E. Calleja, Jean-Daniel Ganière, et al.. Time-resolved photoluminescence of GaN nanocolumns grown by molecular beam epitaxy on Si.. International Workshop on Nitride Semiconductors – IWN08, Oct 2008, Montreux, Switzerland. ⟨hal-00390010⟩
  • Pierre Lefebvre. Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE. 14th European Molecular Beam Epitaxy Workshop (Euro-MBE), Mar 2008, Grenade, Spain. ⟨hal-00389978⟩
  • P. Corfdir, Pierre Lefebvre, J. Levrat, Amélie Dussaigne, J. Ristic, et al.. Emission properties of basal stacking faults in a-plane gallium nitride. 9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors. BIAMS 2008, Jun 2008, Tolède, Spain. ⟨hal-00390009⟩
  • Pierre Lefebvre. Propriétés optiques de nanostructures à base de ZnO. 12èmes Journées Nano, Micro et Optoélectroniques, Jun 2008, Saint-Pierre d'Oléron, France. ⟨hal-00389974⟩
  • P. Lefebvre, Thierry Guillet, Richard Bardoux, B. Gil, T. Bretagnon, et al.. Polarized emission from a single GaN/AlN quantum dot : Experiment and theory. International Workshop on Nitride Semiconductors (IWN2008), Oct 2008, Montreux, Switzerland. ⟨hal-00389910⟩
  • Thierry Guillet, Richard Bardoux, B. Gil, P. Lefebvre, T. Bretagnon, et al.. Emission polarisée d'une boîte quantique unique GaN/AlN : expérience et théorie. 11ème Journées de la Matière Condensée, Aug 2008, Strasbourg, France. ⟨hal-00389559⟩
  • Thierry Guillet, Richard Bardoux, B. Gil, T. Bretagnon, P. Lefebvre, et al.. Polarized emission from a single GaN/AlN quantum dot : Experiment and theory. International Conference on LightMatter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan. ⟨hal-00389909⟩
  • Thierry Bretagnon, Stéphane Faure, Thierry Guillet, Pierre Lefebvre, Bernard Gil, et al.. Internal electric field in ZnO/Zn1-xMgxO in single quantum wells.. Fifth International Workshop on Zinc Oxide and Related Materials., Sep 2008, Ypsilanti, Michigan., United States. ⟨hal-00797187⟩
  • Stéphane Faure, Thierry Guillet, P. Lefebvre, T. Bretagnon, T. Taliercio, et al.. Which quasi-particles in wide band gap bulk microcavities ?. 8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan. ⟨hal-00388717⟩
  • Stéphane Faure, Thierry Guillet, T. Bretagnon, P. Lefebvre, B. Gil. Etude du couplage fort exciton-photon dans les microcavités massives ZnO par photoluminescence. 11ème Journées de la Matière Condensée (JMC11), Aug 2008, Strasbourg, France. ⟨hal-00389906⟩
  • Pierre Lefebvre. Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE. . 14th Euro-MBE Workshop., Mar 2007, Grenade, Spain. ⟨hal-01306409⟩
  • Pierre Lefebvre. Unusual dynamics of time-resolved emission from wide-band gap quantum dots.. Workshop on Advances in Physics and Applications of Low-Dimensional Systems, Jul 2007, Brazilia, Brazil. ⟨hal-00389998⟩
  • Jean-Claude Tedenac, Aude. Mezy, Corine Gerardin, Didier Tichit, S. Suwanboon, et al.. Morphology control of ZnO nanomaterials using double hydrophilis block polymers. 2007 MRS fall meeting, Nov 2007, Boston, United States. pp.1. ⟨hal-00279166⟩
  • Jean-Claude Tedenac, Aude. Mezy, T. Bretagnon, Benoit Coasne, Corine Gerardin, et al.. Synthes de nanofils de ZnO dans des matériaux poreux ordonnés: experience et simulation moléculaire. Matériaux 2006, Nov 2007, France. ⟨hal-00339577⟩
  • Richard Bardoux, Pierre Lefebvre, Thierry Guillet, Thierry Bretagnon, Thierry Taliercio, et al.. Linear polarization of the emission of a single polar GaN/AlN quantum dot. 7th International Conference of Nitride Semiconductors (ICNS-7) , Sep 2007, Las Vegas, United States. ⟨hal-01306799⟩
  • Richard Bardoux, Pierre Lefebvre, Thierry Guillet, Thierry Bretagnon, Thierry Taliercio, et al.. Micro-Photoluminescence of isolated GaN/AlN hexagonal QDs: Role of the trapping dynamics of charges at AlN defects . 14th European Molecular Beam Epitaxy Workshop (14th Euro-MBE), Mar 2007, Grenade, Spain. ⟨hal-01306794⟩
  • Pierre Lefebvre. Optical properties of quantum nanostructures based on wide band-gap semiconductor compounds.. 6th French-Japanese Workshop on Nanomaterials. , Mar 2006, Sapporo, Japan. ⟨hal-01309482⟩
  • Pierre Lefebvre, Thierry Bretagnon, Thierry Taliercio, Thierry Guillet, Bernard Gil, et al.. Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots.. 6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany. ⟨hal-01309937⟩
  • Richard Bardoux, T. Bretagnon, Thierry Guillet, P. Lefebvre, T. Taliercio, et al.. Radiative lifetime in wurtzite GaN/AlN quantum dots.. International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩. ⟨hal-00389911⟩
  • Aude Mezy, Jean-Claude Tedenac, Benoit Coasne, S. Suwanboon, Didier Ravot, et al.. Synthèse de nanofils de ZnO dans des Matériaux Poreux Ordonnés: Experience et Simulation Moléculaire.. Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France. ⟨hal-01309705⟩
  • Aude Mezy, S. Suwanboon, Didier Ravot, Jean-Claude Tedenac, Corine Gérardin, et al.. Contrôle de la croissance de nanomatériaux d'oxyde de zinc par des copolymères diblocs hydrophiles.. Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France. ⟨hal-01309706⟩
  • Richard Bardoux, Thierry Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, et al.. Study of Sharp Photoluminescence Spectra of Individual GaN/AlN Quantum Dots. Spectral Diffusion Effects.. International Workshop on Nitrides Semiconductors (IWN), Oct 2006, Kyoto, Japan. ⟨hal-00389908⟩
  • Christian Morhain, Jean-Michel Chauveau, M. Teisseire, B. Lo, M. Laügt, et al.. Polar and non-polar ZnO/ZnMgO quantum well heterostructures . International Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France. ⟨hal-01309700⟩
  • Thierry Guillet, Thierry Bretagnon, Thierry Taliercio, Pierre Lefebvre, Bernard Gil, et al.. Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells. 6th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2006), J. Christen, Sep 2006, Magdeburg, Germany. pp.352, ⟨10.1016/j.spmi.2007.03.030⟩. ⟨hal-01308666⟩
  • Aude Mezy, Stéphanie Anceau, T. Bretagnon, Pierre Lefebvre, T. Taliercio, et al.. Optical properties of ZnO nanorods and nanowires. E-MRS Spring Meeting, May 2005, Strasbourg, France. pp.358, ⟨10.1016/j.spmi.2005.08.079⟩. ⟨hal-00389990⟩
  • K. Zitouni, A. Kadri, Pierre Lefebvre, Bernard Gil. k.P energy band structure of ZnO/Zn1-xMgxO quantum well heterostructures. E-MRS Spring Meeting, May 2005, Strasbourg, France. pp.91, ⟨10.1016/j.spmi.2005.08.033⟩. ⟨hal-00389991⟩
  • Aude Mezy, Didier Ravot, Corine Gerardin, Didier Tichit, Jean-Claude Tedenac, et al.. Morphology Control of ZnO Nanomaterials using Double Hydrophilic Block Copolymers. MRS Fall Meeting, Dec 2005, Boston, United States. pp.Rb15-05.1. ⟨hal-00389989⟩
  • Thierry Taliercio, Pierre Valvin, Romuald Intartaglia, Vincent Sallet, J.C. Harmand, et al.. Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots. 5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5). , Jun 2005, Glasgow, United Kingdom. pp.2598-2603, ⟨10.1002/pssa.200562030⟩. ⟨hal-01309747⟩
  • Romuald Intartaglia, Thierry Taliercio, Pierre Valvin, Guilhem Almuneau, Pierre Lefebvre, et al.. Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells. 5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5)., Jun 2005, Glasgow, United Kingdom. pp.3887, ⟨10.1002/pssc.200562039⟩. ⟨hal-01309930⟩
  • Thierry Bretagnon, Pierre Valvin, Pierre Lefebvre, Bernard Gil, Christian Morhain, et al.. Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells. International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N — ZnO and Related Materials, Jul 2005, Singapour, Singapore. pp.12-15, ⟨10.1016/j.jcrysgro.2005.10.034⟩. ⟨hal-01309928⟩
  • Thierry Bretagnon, Pierre Valvin, Pierre Lefebvre, Bernard Gil, Christian Morhain. Time resolved photoluminescence of ZnO / (Zn,Mg)O quantum wells. Internal electric field effects.. E-MRS Spring Meeting - Symposium G : ZnO and Related Materials., May 2005, Strasbourg, France. ⟨hal-01309933⟩
  • Laurent Chusseau, Pierre Lefebvre, Thierry Bretagnon, Bernard Gil. Evidence de l'interaction dipôle-dipôle dans la photoluminescence résolue en temps des boîtes quantiques GaN/AlN.. Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France. ⟨hal-01312278⟩
  • Pierre Lefebvre, Sokratis Kalliakos, Thierry Bretagnon, Thierry Taliercio, Bernard Gil, et al.. Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.. E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France. ⟨hal-01310227⟩
  • Romuald Intartaglia, Thierry Taliercio, Pierre Lefebvre, Thierry Bretagnon, Thierry Guillet, et al.. Carrier recombination processes in GaAsN: from the dilute limit to alloying . E-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩. ⟨hal-01310044⟩
  • Pierre Lefebvre. Original physical properties of low-dimensional systems based on group-III nitride semiconductors. . 1st E-MRS Fall Meeting ., European Materials Research Society, Sep 2003, Varsovie, Poland. ⟨hal-01312286⟩
  • Pierre Lefebvre, Aurélien Morel, Thierry Taliercio, Sokratis Kalliakos, Bernard Gil. New model of electron-hole pair recombination in (Ga,In)N/GaN low-dimensional systems. 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. ⟨hal-01312484⟩
  • Romuald Intartaglia, Thierry Taliercio, Bernard Gil, Pierre Lefebvre, Pierre Valvin, et al.. Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers. 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩. ⟨hal-01312489⟩
  • Stéphanie Anceau, Pierre Lefebvre, Tadeusz Suski, S. Lepkowsky, Henryk Teisseyre, et al.. Surprisingly low built-in electric fields in quaternary InAlGaN heterostructures. . 1st E-MRS Fall Meeting ., European Materials Research Society, Sep 2003, Varsovie, Poland. pp.190-194, ⟨10.1002/pssa.200303980⟩. ⟨hal-01312293⟩
  • Sokratis Kalliakos, Pierre Lefebvre, Thierry Taliercio. Photo-induced interband absorption in group-III nitride quantum wells. International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.247-249, ⟨10.1016/S1386-9477(02)00785-3⟩. ⟨hal-01322938⟩
  • Pierre Lefebvre. Optical properties of group-III nitride based quantum wells and quantum boxes.. 12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. , Jun 2002, Smolenice, Slovakia. pp.227 - 232 ⟨10.1109/SIM.2002.1242761⟩. ⟨hal-01316057⟩
  • Aurélien Morel, Pierre Lefebvre, Thierry Taliercio, Bernard Gil, Nicolas Grandjean, et al.. Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells. International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩. ⟨hal-01319596⟩
  • Thierry Taliercio, Bernard Gil, Pierre Lefebvre, Marie-Amandine Pinault, Eric Tournié. Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN. International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩. ⟨hal-01319577⟩
  • Henryk Teisseyre, Tadeusz Suski, S. Lepkowsky, Stéphanie Anceau, Piotr Perlin, et al.. Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures. International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.764-768, ⟨10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0⟩. ⟨hal-01319469⟩
  • J. Allegre, Pierre Lefebvre, Sandrine Juillaguet, Jean Camassel, Wojciech Knap, et al.. Optical properties of InGaN/GaN multiple quantum wells. 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.1295-1298. ⟨hal-00543785⟩
  • Guilhem Almuneau, F. Genty, Laurent Chusseau, C. Picard, T. Taliercio, et al.. Croissance de multi-puits quantiques dans le système (Al)GaInAs sur AlGaAsSb accordé sur InP. Séminaire National : Epitaxie par Jets Moléculaires, 1997, Saint-Aygulf, France. ⟨hal-01904251⟩

Poster communications43 documents

  • Christelle Brimont, Thierry Guillet, Denis Scalbert, Benoit Jouault, Pierre Valvin, et al.. On the nature of light emission in polar GaN/(AlGa)N quantum wells.. 12th International Conference on Nitride Semiconductors – ICNS12., Jul 2017, Strasbourg, France. ⟨hal-01907860⟩
  • Fedor Fedichkin, Peristera Andreakou, Pierre Valvin, Maria Vladimirova, Thierry Guillet, et al.. Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells. . Condensed Matter in Paris – CMD25 – JMC14. , Aug 2014, Paris, France. ⟨hal-01305395⟩
  • F Fedichkin, P Andreakou, P Valvin, M Vladimirova, T Guillet, et al.. Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.. Compound Semiconductor Week 2014, May 2014, Montpellier, France. ⟨hal-01305161⟩
  • Pierre Lefebvre, Christelle Brimont, Pierre Valvin, Bernard Gil, H. Miyake, et al.. Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structures. International Conference on Nitride Semiconductors – ICNS10., Aug 2013, Washington DC, United States. Physica Status Solidi A, 211 (4), pp.765, 2014, ⟨10.1002/pssa.201300505⟩. ⟨hal-01021458⟩
  • Andreas Kruse, Pierre Valvin, Maria Vladimirova, Thierry Guillet, Thierry Bretagnon, et al.. Dipolar exciton fluids in (Al,Ga)N/GaN quantum wells. 14th International Conference on the Physics of Light-Matter Coupling in Nanostructures - PLMCN14, May 2013, Hersonissos, Crète, Greece. ⟨hal-01306241⟩
  • Manuel Lopez-Ponce, Pierre Lefebvre, Christelle Brimont, Pierre Valvin, J.-M. Ulloa, et al.. Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires.. International Workshop on ZnO and Related Materials., Sep 2012, Nice, France. ⟨hal-00708706⟩
  • Pierre Lefebvre, Christelle Brimont, Pierre Valvin, H. Miyake, K. Hiramatsu, et al.. Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.. International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan. ⟨hal-00797472⟩
  • Pierre Corfdir, Pierre Lefebvre. Role of the dielectric mismatch on the emission properties of GaN nanostructures.. International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan. ⟨hal-00708726⟩
  • Pierre Corfdir, Pierre Lefebvre. Excitonic effects in GaN stacking faults and crystal phase quantum wells. International Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland. ⟨hal-00708666⟩
  • Pierre Lefebvre, Christelle Brimont, Thierry Guillet, Thierry Bretagnon, Bernard Gil, et al.. Optical properties of a hybrid nitride-ZnO microcavity.. SPIE-OPTO-Photonic West. "Gallium Nitride Materials & Devices VII"., Jan 2012, San Francisco, United States. ⟨hal-00708677⟩
  • Zarko Gacevic, Pierre Lefebvre, Frank Bertram, G. Schmidt, P. Veit, et al.. Growth and Characterization of InGaN/GaN Quantum Dots for violet-blue Applications. 9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom. ⟨hal-00632224⟩
  • Pierre Corfdir, J. Levrat, G. Rossbach, R. Butté, E. Feltin, et al.. Dynamics of cavity biexcitons in III-Nitride based multi quantum well Microcavities. Optics of Excitons in Confined Systems (OECS 12)., Sep 2011, Paris, France. ⟨hal-00631405⟩
  • Pierre Corfdir, Amélie Dussaigne, H. Teisseyre, Izabella Grzegory, Tadeusz Suski, et al.. Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals.. 38th International Symposium on Compound Semiconductors - ISCS38., May 2011, Berlin, Germany. ⟨hal-00632230⟩
  • Pierre Corfdir, Amélie Dussaigne, H. Teisseyre, Izabella Grzegory, Tadeusz Suski, et al.. Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals.. 9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom. ⟨hal-00631755⟩
  • Pierre Corfdir, Pierre Lefebvre, Amélie Dussaigne, J. Ristic, T. Zhu, et al.. Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.. 10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors - BIAMS 2010, Jul 2010, Halle (Saale), Germany. ⟨hal-00634162⟩
  • Pierre Corfdir, Dobri Simeonov, E. Feltin, J.F. Carlin, Pierre Lefebvre, et al.. Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets.. Otwin Breitenstein, Hartmut S. Leipner. (10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond - BIAMS 2010jul. 2010, Jul 2010, Halle, Germany. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 8 (4), pp.1394, 2011, ⟨10.1002/pssc.201084005⟩. ⟨hal-00631325⟩
  • S. Fernandez-Garrido, J. Grandal, Pierre Lefebvre, M.A. Sanchez-Garcia, E. Calleja. GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters.. 3rd International Symposium on Growth of III-Nitrides - ISGN3., Jul 2010, Montpellier, France. ⟨hal-00633536⟩
  • Pierre Corfdir, Amélie Dussaigne, Pierre Lefebvre, H. Teisseyre, Jean-Daniel Ganière, et al.. Radiative lifetimes of localized and free excitons in homoepitaxial non-polar (Al,Ga)N/GaN single quantum well.. 39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland. ⟨hal-00634159⟩
  • Pierre Corfdir, Amélie Dussaigne, Pierre Lefebvre, H. Teisseyre, Tadeusz Suski, et al.. Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN.. International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States. ⟨hal-00633505⟩
  • Steven Albert, J. Grandal, M.A. Sanchez-Garcia, Pierre Lefebvre, J. Ristic, et al.. MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates.. 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany. ⟨hal-00633522⟩
  • Samuel Sonderegger, Pierre Corfdir, Laurent Balet, Pierre Lefebvre, Denis Martin, et al.. Optical properties of V-pits in GaN through temperature-dependent picosecond Time-Resolved Cathodolminescence (pTRCL). Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea. ⟨hal-00797196⟩
  • Pierre Corfdir, Pierre Lefebvre, J. Ristic, Amélie Dussaigne, Samuel Sonderegger, et al.. Exciton localization on basal stacking faults in a-plane GaN probed by picosecond time-resolved cathodoluminescence.. Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain. ⟨hal-00797193⟩
  • Stéphane Faure, Thierry Guillet, Christelle Brimont, Thierry Bretagnon, Pierre Lefebvre, et al.. Strong coupling of multiple branches polariton in a ZnO microcavity.. Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain. ⟨hal-00797194⟩
  • Pierre Corfdir, Jean-Daniel Ganière, J. Ristic, Pierre Lefebvre, B. Deveaud, et al.. Spectroscopy of GaN nanocolumns grown by molecular beam epitaxy on Si.. Meeting annuel de la Société Suisse de Physique., Mar 2008, Genève, Switzerland. ⟨hal-00797191⟩
  • Stéphane Faure, Thierry Guillet, Pierre Lefebvre, Thierry Bretagnon, Thierry Taliercio, et al.. Which quasi-particle in wide band gap bulk microcavities? . 2nd International School on Nanophotonics , Sep 2007, Maratea, Italy. ⟨hal-01306849⟩
  • Henryk Teisseyre, C. Skierbiszewski, Boleslaw Łucznik, Kamler G., Feduniewicz A., et al.. Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates.. 6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany. ⟨hal-01309939⟩
  • Robert Czernecki, Piotr Perlin, G. Franssen, T. Swietlik, J. Borysiuk, et al.. Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals.. 6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany. ⟨hal-01309942⟩
  • Richard Bardoux, Thierry Guillet, Pierre Lefebvre, Thierry Taliercio, Thierry Bretagnon, et al.. Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipole . Wolfgang Jantsch; Friederich Schafler. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. AIP Publishing, AIP Conference Proceedings, 893, pp.941, 2007, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. ⟨10.1063/1.2730203⟩. ⟨hal-01309696⟩
  • Thierry Bretagnon, Thierry Guillet, Pierre Lefebvre, Thierry Taliercio, Bernard Gil, et al.. Determination of internal electric field in ZnO/(Zn,Mg)O quantum wells from time resolved photoluminescence experiments. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. ⟨hal-01309701⟩
  • Thierry Bretagnon, Pierre Lefebvre, Bernard Gil, Christian Morhain. ZnO / (Zn,Mg)O Quantum Wells : a Time Resolved Photoluminescence Study . International Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France. ⟨hal-01309698⟩
  • Thierry Bretagnon, Pierre Lefebvre, Pierre Valvin, Thierry Taliercio, Thierry Guillet, et al.. Carrier recombination dynamics in GaN/AlN quantum dots.. EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France. ⟨hal-01310832⟩
  • Pierre Lefebvre, Thierry Bretagnon, Thierry Taliercio, Thierry Guillet, Bernard Gil, et al.. Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.. Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland. ⟨hal-01312253⟩
  • Pierre Lefebvre, Thierry Bretagnon, Thierry Taliercio, Thierry Guillet, Bernard Gil, et al.. Malices et fourberies des boîtes quantiques GaN/AlN.. Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France. ⟨hal-01312258⟩
  • S. Kalliakos, Thierry Bretagnon, Pierre Lefebvre, Sandrine Juillaguet, T. Taliercio, et al.. Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots. Eun-Kyung Suh; Euijoon Yoon; Hyung Jae Lee. 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Physica Status Solidi (b), 241 (12), pp.2779-2782, 2004, ⟨10.1002/pssb.200404996⟩. ⟨hal-00543738⟩
  • Thierry Taliercio, Sébastien Rousset, Pierre Lefebvre, Thierry Bretagnon, Thierry Guillet, et al.. Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillars. European Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices., May 2004, Strasbourg, France. Elsevier, Superlattices and Microstructures, 36 (4-6), pp.783-790, 2004, European Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices. ⟨10.1016/j.spmi.2004.09.034⟩. ⟨hal-01312254⟩
  • Romuald Intartaglia, Thierry Taliercio, Pierre Valvin, Thierry Guillet, Thierry Bretagnon, et al.. Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs.. 9èmes Journées de la Matière Condensée, Aug 2004, Nancy, France. ⟨hal-01312282⟩
  • Stéphanie Anceau, Pierre Lefebvre, Tadeusz Suski, Leszek Konczewicz, H Hirayama, et al.. Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate . Jean Camassel; Sylvie Contreras; Sandrine Juillaguet. EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Physica Status Solidi (a), 202 (4), pp.642, 2005, ⟨10.1002/pssa.200460455⟩. ⟨hal-01310242⟩
  • Stéphanie Anceau, Pierre Lefebvre, Tadeusz Suski, Leszek Konczewicz, H Hirayama, et al.. Amélioration de l’efficacité radiative dans les puits quantiques à base d’(Al,Ga,In)N pour les composants optoélectroniques. Journées du GDR "Semiconducteurs à Grands Gaps"., May 2004, Fréjus, France. ⟨hal-01312280⟩
  • Pierre Lefebvre, Sokratis Kalliakos, Thierry Taliercio. Nonlinear optical absorption induced by high photo-excitation of group-III nitride based quantum wells. 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. ⟨hal-01312666⟩
  • S. Kalliakos, Thierry Bretagnon, Pierre Lefebvre, Sandrine Juillaguet, T. Taliercio, et al.. Optical properties of GaN/AlN quantum boxes under high photo-excitation. 5th International Conference on Nitride Semiconductors (ICNS-5), May 2003, Nara, Japan. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim , Physica Status Solidi (c), 0, pp.2666-2669, 2003, ⟨10.1002/pssc.200303270⟩. ⟨hal-00543736⟩
  • Stéphanie Anceau, S. Lepkowsky, Henryk Teisseyre, Tadeusz Suski, Piotr Perlin, et al.. Small internal electric fields in quaternary InGaAlN heterostructures . Michael Shur; Arturas Zukauskas. NATO Advanced Research Workshop on UV Solid State Light Emitters and Detectors., Jun 2003, Vilnius, Lithuania. Kluwer Academic Publisher, Dordrecht, Pays-Bas.; lOS Press, Amsterdam, Pays-Bas.; NATO Scientific Affairs Division., 144, pp.215-222, UV Solid-State Light Emitters and Detectors. NATO Science Series II: Mathematics, Physics and Chemistry. ⟨10.1007/978-1-4020-2103-9⟩. ⟨hal-01312494⟩
  • Henryk Teisseyre, Tadeusz Suski, S. Lepkowsky, Stéphanie Anceau, Piotr Perlin, et al.. Internal electric fields in quaternary InAlGaN heterostructures . 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. ⟨hal-01312665⟩
  • Stéphanie Anceau, Henryk Teisseyre, Tadeusz Suski, S. Lepkowsky, Leszek Konczewicz, et al.. Evolution of internal electric fields with the wel thickness of quaternary InAlGaN quantum wells. Joint 19th AIRAPT - 41th EHPRG Int. Conf. on High Pressure Science and Technology , Jul 2003, Bordeaux, France. ⟨hal-01312667⟩