Pierre Lefebvre
Pierre LEFEBVRE - Directeur de Recherche CNRS - Directeur du Laboratoire Charles Coulomb (L2C)
14
Documents
Identifiants chercheurs
pierre-lefebvre- IdRef : 033942463
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0000-0001-8513-5489
- ISNI : 0000000001935976
- Google Scholar : https://scholar.google.fr/citations?user=YuoEELIAAAAJ&hl=fr
- ResearcherId : Q-7571-2019
Publications
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Light-emitting diode chip. Phosphor-free-all-InGaN White Light LEDs using Nanocolumns.Germany, Patent n° : EP2506321. L2C:11-359. 2012
Brevet
hal-02074092v1
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Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns.Superlattices and Microstructures, 2012, 52, pp.165. ⟨10.1016/j.spmi.2012.05.001⟩
Article dans une revue
hal-00704495v1
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Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies.Applied Physics Letters, 2012, 100, pp.231906. ⟨10.1063/1.4728115⟩
Article dans une revue
hal-00704507v1
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Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology.Applied Physics Letters, 2011, 98 (8), pp.083104. ⟨10.1063/1.3556643⟩
Article dans une revue
hal-00631205v1
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Advances on MBE Selective Area Growth of III- Nitride nanostructures: from nanoLEDs to pseudo substrates.Workshop on Frontier Electronics - WOFE., Chairman: M.Shur - Rensselaer Polytechnic Institute,Troy, NY, USA, Dec 2013, San Juan, Puerto Rico. pp.1450020, ⟨10.1142/S0129156414500207⟩
Communication dans un congrès
hal-01081163v1
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Control of the Morphology on Selective Area Growth of GaN Nanocolumns by Rf-Plasma-Assisted MBE.9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès
hal-00631606v1
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Emission Control of InGaN Nanocolumns on Si(111) substrates Grown by MBE .9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès
hal-00631744v1
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E-beam nanopatterning for the ordered growth of GaN/InGaN nanorods.37th International Conference on Micro and Nano Engineering (MNE 2011)., Sep 2011, Berlin, Germany. pp.374, ⟨10.1016/j.mee.2012.07.024⟩
Communication dans un congrès
hal-00726087v1
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Selective area growth of GaN nanocolumns by rf-plasma assisted MBE at low temperature and under nitrogen-rich conditions.9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom
Communication dans un congrès
hal-00631745v1
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MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates.2011 German-Japanese-Spanish Joint Workshop on Frontiers in Photonic and Electronic Materials and Devices, Elias Muñoz, Mar 2011, Grenade, Spain
Communication dans un congrès
hal-01306674v1
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MBE growth and characterization of InGaN nanocolumns on Silicon substrates.European Materials Research Society Spring Meeting., May 2011, Nice, France
Communication dans un congrès
hal-00632236v1
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On the spontaneous and ordered growth of III-N nanocolumns: growth on nonpolar substrates and applications to Optoelectronic Devices.39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland
Communication dans un congrès
hal-00634066v1
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Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE.16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany
Communication dans un congrès
hal-00633529v1
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GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters.3rd International Symposium on Growth of III-Nitrides - ISGN3., Jul 2010, Montpellier, France
Poster de conférence
hal-00633536v1
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