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Pierre Lefebvre

Pierre LEFEBVRE - Directeur de Recherche CNRS - Directeur du Laboratoire Charles Coulomb (L2C)

20

Documents

Identifiants chercheurs

pierre-lefebvre
IdRef : 033942463
0000-0001-8513-5489
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Google Scholar : https://scholar.google.fr/citations?user=YuoEELIAAAAJ&hl=fr
ResearcherId : Q-7571-2019

Publications

710065

	Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes. Sokratis Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Thierry Taliercio , Bernard Gil Journal of Applied Physics, 2004, 96 (1), pp.180. ⟨10.1063/1.1753085⟩ Article dans une revue hal-01303942v1
	Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation. Pierre Lefebvre , Sokratis Kalliakos , Thierry Bretagnon , Pierre Valvin , Thierry Taliercio Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (3), pp.035307. ⟨10.1103/PhysRevB.69.035307⟩ Article dans une revue hal-01303935v1
	Nonlinear behavior of photoabsorption in hexagonal nitride quantum wells due to free carrier screening of the internal fields. Sokratis Kalliakos , Pierre Lefebvre , Thierry Taliercio Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 67 (20), pp.205307. ⟨10.1103/PhysRevB.67.205307⟩ Article dans une revue hal-01303911v1
	Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation. Thierry Bretagnon , Sokratis Kalliakos , Pierre Lefebvre , Pierre Valvin , Bernard Gil Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (20), pp.205301. ⟨10.1103/PhysRevB.68.205301⟩ Article dans une revue hal-01303926v1
	Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems. Aurélien Morel , Pierre Lefebvre , Sokratis Kalliakos , Thierry Taliercio , Thierry Bretagnon Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (4), pp.045331. ⟨10.1103/PhysRevB.68.045331⟩ Article dans une revue hal-01303919v1
	Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes. Sokratis Kalliakos , Xuebin Zhang , Thierry Taliercio , Pierre Lefebvre , Bernard Gil Applied Physics Letters, 2002, 80 (3), pp.428. ⟨10.1063/1.1433165⟩ Article dans une revue hal-01303257v1
	Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy. Thierry Taliercio , Mathieu Gallart , Pierre Lefebvre , Aurélien Morel , Bernard Gil Solid State Communications, 2001, 117 (7), pp.445. ⟨10.1016/S0038-1098(00)00475-0⟩ Article dans une revue hal-01302922v1
	Optical properties of group-III nitride quantum wells and quantum boxes. Thierry Taliercio , Pierre Lefebvre , Aurélien Morel , Bernard Gil Journal of Physics: Condensed Matter, 2001, 13 (32), pp.7027. ⟨10.1088/0953-8984/13/32/310⟩ Article dans une revue hal-01303255v1
	High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy. Pierre Lefebvre , Aurélien Morel , Mathieu Gallart , Thierry Taliercio , Jacques Allègre Applied Physics Letters, 2001, 78 (9), pp.1252. ⟨10.1063/1.1351517⟩ Article dans une revue hal-01303203v1
	Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes. Pierre Lefebvre , Thierry Taliercio , Aurélien Morel , Jacques Allègre , Mathieu Gallart Applied Physics Letters, 2001, 78 (11), pp.1538. ⟨10.1063/1.1352664⟩ Article dans une revue hal-01303205v1
	Exclusion principle and screening of excitons in GaN/AlxGa1−xN quantum wells. Pierre Bigenwald , Alexey Kavokin , Bernard Gil , Pierre Lefebvre Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 63 (3), pp.035315. ⟨10.1103/PhysRevB.63.035315⟩ Article dans une revue hal-01303201v1
	Influence of electron-phonon interaction on the optical properties of III nitride semiconductors. Xuebin Zhang , Thierry Taliercio , Sokratis Kalliakos , Pierre Lefebvre Journal of Physics: Condensed Matter, 2001, 13 (32), pp.7053. ⟨10.1088/0953-8984/13/32/312⟩ Article dans une revue hal-01303256v1
	Electron-hole plasma effect on excitons in GaN/AlxGa1−xN quantum wells. Pierre Bigenwald , Alexey Kavokin , Bernard Gil , Pierre Lefebvre Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61 (23), pp.15621. ⟨10.1103/PhysRevB.61.15621⟩ Article dans une revue hal-01302903v1

	Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩ Communication dans un congrès hal-00543738v1
	Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots. Pierre Lefebvre , Sokratis Kalliakos , Thierry Bretagnon , Thierry Taliercio , Bernard Gil E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France Communication dans un congrès hal-01310227v1
	Original physical properties of low-dimensional systems based on group-III nitride semiconductors. Pierre Lefebvre 1st E-MRS Fall Meeting ., European Materials Research Society, Sep 2003, Varsovie, Poland Communication dans un congrès hal-01312286v1
	Optical properties of GaN/AlN quantum boxes under high photo-excitation S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio 5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩ Communication dans un congrès hal-00543736v1
	Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells Aurélien Morel , Pierre Lefebvre , Thierry Taliercio , Bernard Gil , Nicolas Grandjean International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩ Communication dans un congrès hal-01319596v1
	Photo-induced interband absorption in group-III nitride quantum wells Sokratis Kalliakos , Pierre Lefebvre , Thierry Taliercio International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.247-249, ⟨10.1016/S1386-9477(02)00785-3⟩ Communication dans un congrès hal-01322938v1

	Nonlinear optical absorption induced by high photo-excitation of group-III nitride based quantum wells Pierre Lefebvre , Sokratis Kalliakos , Thierry Taliercio 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. Poster de conférence hal-01312666v1