Pierre Lefebvre
Pierre LEFEBVRE - Directeur de Recherche CNRS - Directeur du Laboratoire Charles Coulomb (L2C)
16
Documents
Identifiants chercheurs
pierre-lefebvre- IdRef : 033942463
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0000-0001-8513-5489
- ISNI : 0000000001935976
- Google Scholar : https://scholar.google.fr/citations?user=YuoEELIAAAAJ&hl=fr
- ResearcherId : Q-7571-2019
Publications
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Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructuresPhysical Review B, 2021, 103 (4), pp.045308. ⟨10.1103/PhysRevB.103.045308⟩
Article dans une revue
hal-03014825v2
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Trapping Dipolar Exciton Fluids in GaN/(AlGa)N NanostructuresNano Letters, 2019, 19 (8), pp.4911-4918. ⟨10.1021/acs.nanolett.9b00914⟩
Article dans une revue
hal-02272702v1
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Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum WellsPhysical Review Applied, 2016, 6 (1), pp.014011. ⟨10.1103/PhysRevApplied.6.014011⟩
Article dans une revue
hal-01353893v2
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Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
Communication dans un congrès
hal-02466887v1
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Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
Communication dans un congrès
hal-02466858v1
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Indirect Excitons in Group III-Nitride-Based Quantum Wells.CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy
Communication dans un congrès
hal-01908795v1
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Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Communication dans un congrès
hal-01907806v1
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Phase transition of indirect excitons in GaN quantum wells.International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès
hal-01910225v1
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Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico
Communication dans un congrès
hal-01908823v1
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Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany
Communication dans un congrès
hal-01908565v1
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On the nature of light emission in polar GaN/(AlGa)N quantum wellsInternational Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece
Communication dans un congrès
hal-01932705v1
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Indirect excitons in polar GaN/(AlGa)N quantum wellsInternational school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia
Communication dans un congrès
hal-01932812v1
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Indirect excitons in polar group III nitride quantum wells.8th International Conference on Materials Science and Condensed Matter Physics, Leonid Kulyuk, Sep 2016, Chisinau, Moldova
Communication dans un congrès
hal-01388929v1
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Transport of indirect excitons in GaN quantum wells.International Workshop on Nitride Semiconductors (IWN 2016), Alan Doolittle, Tomás Palacios, Stacia Keller, Siddharth Rajan, Oct 2016, Orlando, United States
Communication dans un congrès
hal-01388983v1
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Indirect excitons in AlGaN/GaN polar quantum wells.17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17., Yasuhiko Arakawa, Mar 2016, Nara, Japan
Communication dans un congrès
hal-01388908v1
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On the nature of light emission in polar GaN/(AlGa)N quantum wells.Poster de conférence hal-01907860v1 |