Pierre Lefebvre
Pierre LEFEBVRE - Directeur de Recherche CNRS - Directeur du Laboratoire Charles Coulomb (L2C)
7
Documents
Identifiants chercheurs
- pierre-lefebvre
- IdRef : 033942463
- 0000-0001-8513-5489
- ISNI : 0000000001935976
- Google Scholar : https://scholar.google.fr/citations?user=YuoEELIAAAAJ&hl=fr
- ResearcherId : Q-7571-2019
Publications
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold filmsPhysical Review B, 2023, 108 (12), pp.125421. ⟨10.1103/PhysRevB.108.125421⟩
Article dans une revue
hal-04251300v1
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Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wellsPhysical Review B, 2022, 106 (3), pp.035429. ⟨10.1103/PhysRevB.106.035429⟩
Article dans une revue
hal-03759667v1
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Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructuresPhysical Review B, 2021, 103 (4), pp.045308. ⟨10.1103/PhysRevB.103.045308⟩
Article dans une revue
hal-03014825v2
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Trapping Dipolar Exciton Fluids in GaN/(AlGa)N NanostructuresNano Letters, 2019, 19 (8), pp.4911-4918. ⟨10.1021/acs.nanolett.9b00914⟩
Article dans une revue
hal-02272702v1
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Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico
Communication dans un congrès
hal-01908823v1
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Phase transition of indirect excitons in GaN quantum wells.International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès
hal-01910225v1
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Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Communication dans un congrès
hal-01907806v1
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