Identifiants chercheur

Projets Européen

Nombre de documents

251

Pierre LEFEBVRE - Directeur de Recherche CNRS - Directeur du Laboratoire Charles Coulomb (L2C)


Brevet2 documents

  • Jelena Ristic, Martin Strassburg, Pierre Lefebvre. Light-emitting diode chip. Phosphor-free-all-InGaN White Light LEDs using Nanocolumns.. Germany, Patent n° : EP2506321. 2012. 〈hal-01306405〉
  • Jelena Ristic, Pierre Lefebvre, Martin Strassburg, Werner Bergbauer. Optical gas sensing device.. Germany, Patent n° : EP2518475. 2012. 〈hal-01306407〉

Chapitre d'ouvrage2 documents

  • Pierre Lefebvre. Surface related optical properties of GaN-based nanowires.. V. Consonni, G. Feuillet. Wide Band Gap Semiconductor Nanowires 1., John Wiley & Sons, Inc., Hoboken, NJ, USA., pp.59-79, 2014, Print: 978-1-84821-597-9. Online:9781118984321. 〈10.1002/9781118984321.ch3〉. 〈hal-01061571〉
  • Pierre Lefebvre, Bernard Gil, Jean Massies, Nicolas Grandjean, Mathieu Leroux, et al.. Physics and optical properties of GaN-AlGaN quantum wells.. H. Jiang; O. Manasreh III-V Nitride Semiconductors : Optical Properties I, Taylor & Francis Books, pp.249, 2002, 1-56032-972-6. 〈hal-01306468〉

Ouvrage (y compris édition critique et traduction)1 document

  • Henry Mathieu, Thierry Bretagnon, Pierre Lefebvre. Physique des Semiconducteurs et des Composants Electroniques - Problèmes Résolus. : Complément pratique de l'ouvrage "Physique des semiconducteurs et des composants électroniques". - 2e et 3e cycles, écoles d'ingénieurs.. Dunod, 2001, Collection Sciences Sup, 2-10-004662-4. 〈hal-01306435〉

Direction d'ouvrage, Proceedings, Dossier2 documents

Article dans une revue112 documents

Communication dans un congrès88 documents

  • Julien Barjon, Pierre Valvin, Christelle Brimont, Pierre Lefebvre, Ovidiu Brinza, et al.. Picosecond dynamics of free and bound excitons in doped diamond. Hasselt Diamond Workshop 2016 - SBDD XXI, Mar 2016, Hasselt, Belgium. 〈http://www.uhasselt.be/SBDD〉. 〈hal-01306898〉
  • Thierry Guillet, Benoit Jouault, Fedor Fedichkin, Pierre Lefebvre, Christelle Brimont, et al.. Transport of indirect excitons in GaN quantum wells.. International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States. 〈https://www.mrs.org/iwn-2016〉. 〈hal-01388983〉
  • Maria Vladimirova, Benoit Jouault, Fedor Fedichkin, Thierry Guillet, Christelle Brimont, et al.. Indirect excitons in AlGaN/GaN polar quantum wells.. 17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17., Mar 2016, Nara, Japan. 〈http://www.plmcn17.iis.u-tokyo.ac.jp/〉. 〈hal-01388908〉
  • Fedor Fedichkin, Benoit Jouault, Thierry Guillet, Christelle Brimont, Pierre Valvin, et al.. Indirect excitons in polar group III nitride quantum wells. . 8th International Conference on Materials Science and Condensed Matter Physics, Sep 2016, Chisinau, Moldova. 〈http://www.mscmp.phys.asm.md/〉. 〈hal-01388929〉
  • Tadeusz Suski, Grzegorz Staszczak, Pierre Lefebvre, Krzysztof Piotr Korona, Piotr Drozdz, et al.. Searching for Indirect Excitons in Coupled Double InGaN/GaN Quantum Wells. International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States. 〈https://www.mrs.org/iwn-2016〉. 〈hal-01389862〉
  • Fedor Fedichkin, Benoit Jouault, Maria Vladimirova, Thierry Guillet, Christelle Brimont, et al.. Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates.. Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference, Sep 2015, Pise, Italy. 〈http://web.nano.cnr.it/CEE2D/〉. 〈hal-01305122〉
  • Pierre Lefebvre. “Naturally” indirect excitons in wide band-gap semiconductor quantum wells.. INDEX International School on the Physics of Indirect Excitons , Mar 2015, Les Houches, France. 〈http://indexitn.coulomb.univ-montp2.fr/spip.php?rubrique47〉. 〈hal-01305086〉
  • Fedor Fedichkin, Benoit Jouault, Thierry Guillet, Christelle Brimont, Pierre Valvin, et al.. Indirect excitons in wide band gap semiconductors. . International School on Nanophotonics and Photovoltaics. INSP 2015., Sep 2015, Cefalu, Italy. 〈http://www.mifp.eu/SCHOOLS/ISNP-2015/〉. 〈hal-01389731〉
  • Manuel Lopez-Ponce, Atsushi Nakamura, M. Suzuki, J. Temmyo, S. Agouram, et al.. ZnCdO/ZnO multiple quantum well nanowires emitting in the visible.. 8th International Workshop on Zinc Oxide and Related Materials - IWZnO 2014., Sep 2014, Niagara Falls, Canada. 〈http://www.mrs.org/iwzno-2014/〉. 〈hal-01305424〉
  • Fedor Fedichkin, Benoit Jouault, Peristera Andreakou, Pierre Valvin, Maria Vladimirova, et al.. Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells. . 15th conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN15), Jun 2014, Montpellier, France. 〈http://plmcn2014.coulomb.univ-montp2.fr/〉. 〈hal-01305383〉
  • Pierre Corfdir, Oliver Brandt, Pierre Lefebvre. Impact of surface and internal electrical fields on the properties of donor atoms in GaN nanowires. . International Workshop on Nitride Semiconductors – IWN 2014., Aug 2014, Wroclaw, Poland. 〈hal-01305403〉
  • S. Albert, A. Bengoechea-Encabo, F. Barbagini, D. López-Romero, M. A. Sanchez-García, et al.. Advances on MBE Selective Area Growth of III- Nitride nanostructures: from nanoLEDs to pseudo substrates.. Workshop on Frontier Electronics - WOFE., Dec 2013, San Juan, Puerto Rico. World Scientific Publishing Company, International Journal of High Speed Electronics and Systems, 23 (3 & 4), pp.1450020, 2014, 〈http://www.worldscientific.com/doi/abs/10.1142/S0129156414500207〉. 〈10.1142/S0129156414500207〉. 〈hal-01081163〉
  • Pierre Lefebvre. Spatio-Temporal Dynamical Properties of Naturally Indirect Excitons in Polar Nitride Quantum Wells.. European Materials Research Society (E-MRS) Srping Meeting. Symposium L: Group III Nitrides., May 2013, Strasbourg, France. 〈hal-00796426〉
  • Pierre Corfdir, Amélie Dussaigne, Mehran Shahmohammadi, Henryk Teisseyre, Tadeusz Suski, et al.. Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells. E-MRS Fall Meeting, Sep 2013, Varsovie, Poland. 〈hal-01306226〉
  • Pierre Corfdir, Pierre Lefebvre. Excitonic effects in GaN stacking faults and crystal phase quantum wells. UK Semiconductors 2012, Jul 2012, Sheffield, United Kingdom. 〈hal-00708658〉
  • Pierre Corfdir, E. Giraud, J. Levrat, G. Rossbach, R. Butté, et al.. Impact of biexcitons on the formation of polariton condensates in III-nitride based multiple quantum well microcavities.. International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan. 〈hal-00708717〉
  • Manuel Lopez-Ponce, A. Hierro, J.-M. Ulloa, Pierre Lefebvre, E. Muñoz, et al.. Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD.. International Workshop on ZnO and Related Materials., Sep 2012, Nice, France. 〈hal-00708700〉
  • Pierre Lefebvre. Analysis and control of emission properties of InGaN-on-GaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.. SPIE-Photonic West-OPTO. "Gallium Nitride Materials and Devices VII". (Conference 8262)., Jan 2012, San Francisco, United States. 〈hal-00708483〉
  • Pierre Corfdir, Amélie Dussaigne, H. Teisseyre, Tadeusz Suski, Izabella Grzegory, et al.. Purely radiative recombinations and thermal carrier emission in nonpolar (Al,Ga)N/GaN quantum wells.. International Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland. 〈hal-00708669〉
  • Pierre Corfdir, Amelie Dussaigne, Henryk Teisseyre, Tadeusz Suski, Izabella Grzegory, et al.. Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates. International Workshop on Nitride semiconductors., Oct 2012, Sapporo, Japan. Japan Society of Applied Physics, Japanese Journal of Applied Physics, 52 (8S), pp.08JC01, 2013, Recent Advances in Nitride Semiconductors. 〈http://iopscience.iop.org/article/10.7567/JJAP.52.08JC01/meta〉. 〈10.7567/JJAP.52.08JC01〉. 〈hal-01179181〉
  • Pierre Corfdir, Amélie Dussaigne, H. Teisseyre, Tadeusz Suski, Izabella Grzegory, et al.. Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the a-facet of GaN crystals.. International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan. 〈hal-00708711〉
  • Steven Albert, Pierre Lefebvre, J. Grandal, M.A. Sanchez-Garcia, E. Calleja. Emission Control of InGaN Nanocolumns on Si(111) substrates Grown by MBE .. 9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom. 〈hal-00631744〉
  • Ana Bengoechea-Encabo, Steven Albert, Francesca Barbagini, Pierre Lefebvre, M.A. Sanchez-Garcia, et al.. Control of the Morphology on Selective Area Growth of GaN Nanocolumns by Rf-Plasma-Assisted MBE.. 9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom. 〈hal-00631606〉
  • Steven Albert, Pierre Lefebvre, J. Grandal, M.A. Sanchez-Garcia, E. Calleja. MBE growth and characterization of InGaN nanocolumns on Silicon substrates.. European Materials Research Society Spring Meeting., May 2011, Nice, France. 〈hal-00632236〉
  • E. Calleja, Ana Bengoechea-Encabo, Steven Albert, M.A. Sanchez-Garcia, Francesca Barbagini, et al.. Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics.. 11th International Conference on Light-Matter Coupling in Nanostructures, PLMCN11, Apr 2011, Berlin, Germany. 〈hal-00632240〉
  • Steven Albert, Ana Bengoechea-Encabo, Francesca Barbagini, Pierre Lefebvre, M.A. Sanchez-Garcia, et al.. Selective area growth of GaN nanocolumns by rf-plasma assisted MBE at low temperature and under nitrogen-rich conditions.. 9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom. 〈hal-00631745〉
  • Pierre Corfdir, J. Levrat, G. Rossbach, R. Butté, E. Feltin, et al.. Biexciton-Assisted Relaxation Mechanisms In III-Nitride Based Multi-Quantum Well Microcavities.. 9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom. 〈hal-00631761〉
  • Pierre Lefebvre. Surface-related optical properties of GaN and InGaN nanocolumns.. European Materials Research Society Spring Meeting., May 2011, Nice, France. 〈hal-00631334〉
  • Steven Albert, Ana Bengoechea-Encabo, M.A. Sanchez-Garcia, Francesca Barbagini, E. Calleja, et al.. Efficient phosphor-free, white light emission by using ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE.. SORIN CRISTOLOVEANU AND MICHAEL SHUR. Workshop on Frontier Electronics - WOFE 7, Dec 2011, San Juan, Puerto Rico. World Scientific Publishing, 21 (1), pp.1250010, 2012, 〈10.1142/S0129156412500103〉. 〈hal-00656647〉
  • Miguel A. Sanchez-Garcia, Steven Albert, Ana Bengoechea-Encabo, Pierre Lefebvre, E. Calleja, et al.. MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates.. 2011 German-Japanese-Spanish Joint Workshop on Frontiers in Photonic and Electronic Materials and Devices, Mar 2011, Grenade, Spain. 〈http://www.isom.upm.es/GeJpSp2011/index.html〉. 〈hal-01306674〉
  • Pierre Corfdir, Pierre Lefebvre, Amélie Dussaigne, Laurent Balet, Samuel Sonderegger, et al.. Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in GaN and GaN based heterostructures . Cathodo-luminescence 2011. , Oct 2011, Gaithersburg, MD, United States. 〈http://www.microbeamanalysis.org/topical-conferences/cl-2011〉. 〈hal-01306660〉
  • Pierre Corfdir, J. Levrat, R. Butté, E. Feltin, J.F. Carlin, et al.. Direct observation of biexciton localization dynamics in (Al,Ga)N/GaN multi quantum wells.. 38th International Symposium on Compound Semiconductors - ISCS 2011., May 2011, Berlin, Germany. 〈hal-00797375〉
  • P. Corfdir, Pierre Lefebvre, Amélie Dussaigne, Laurent Balet, Samuel Sonderegger, et al.. Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in a-Plane (Al,Ga)N/GaN Quantum Wells.. Microscopy Society of America. Microscopy and Microanalysis 2011, Aug 2011, Nashville, Tennessee., United States. Cambridge University Press, 17 (supplement S2), pp.1868-1869, 2011, 〈10.1017/S143192761101021X〉. 〈hal-00796090〉
  • Francesca Barbagini, Ana Bengoechea-Encabo, Steven Albert, Pierre Lefebvre, Javier Martinez, et al.. E-beam nanopatterning for the ordered growth of GaN/InGaN nanorods.. D. Kern, J.P. Reithmaier, O. Krüger, U. Zeitner, M. Hoffmann, M. Steizle. 37th International Conference on Micro and Nano Engineering (MNE 2011)., Sep 2011, Berlin, Germany. Elsevier, 98, pp.374, 2012, 〈10.1016/j.mee.2012.07.024〉. 〈hal-00726087〉
  • Samuel Sonderegger, P. Corfdir, Laurent Balet, T. Zhu, Amélie Dussaigne, et al.. Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures.. Robert L. Price, University of South Carolina, USA. Microscopy and Microanalysis (M&M) 2010, Aug 2010, Portland, United States. 16 (supplement S2), pp.500, 2010, 〈10.1017/S1431927610058162〉. 〈hal-00741055〉
  • E. Calleja, Ana Bengoechea-Encabo, J. Grandal, S. Fernandez-Garrido, M.A. Sanchez-Garcia, et al.. On the spontaneous and ordered growth of III-N nanocolumns: growth on nonpolar substrates and applications to Optoelectronic Devices.. 39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland. 〈hal-00634066〉
  • Pierre Lefebvre. Internal efficiency of LEDs: An application of Quantum Mechanics.. ForumLED - Europe 2010, Dec 2010, Lyon, France. 〈hal-00634063〉
  • Pierre Lefebvre, Steven Albert, J. Ristic, M.A. Sanchez-Garcia, E. Calleja. Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy.. International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States. 〈hal-00633510〉
  • E. Calleja, Ana Bengoechea-Encabo, J. Grandal, S. Fernandez-Garrido, J. Ristic, et al.. Spontaneous and ordered growth of III-N nanocolumns: growth mechanisms and applications to Optoelectronic Devices.. International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States. 〈hal-00633516〉
  • Pierre Corfdir, Pierre Lefebvre, Amélie Dussaigne, Laurent Balet, Samuel Sonderegger, et al.. Exciton dynamics in a-plane (Al,Ga)N/GaN single quantum wells grown by molecular beam epitaxy on ELO-GaN.. International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States. 〈hal-00633490〉
  • Ana Bengoechea-Encabo, J. Grandal, S. Fernandez-Garrido, M.A. Sanchez-Garcia, Francesca Barbagini, et al.. Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE.. 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany. 〈hal-00633529〉
  • Pierre Corfdir, Pierre Lefebvre, Jean-Daniel Ganière, Benoit Deveaud-Plédran. Distortion of donor properties in III-nitride based nano-scale systems.. International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States. 〈hal-00633495〉
  • Thierry Guillet, Richard Bardoux, Thierry Bretagnon, Bernard Gil, Pierre Lefebvre, et al.. Polarized emission from a single GaN/AlN quantum dot : Experiment and theory. Journées Boîtes Quantiques, Jun 2009, Grenoble, France. 〈hal-00633306〉
  • Thierry Bretagnon, Thierry Guillet, Pierre Lefebvre, Bernard Gil, Christian Morhain. Effect of the internal electric field on excitonic transitions in ZnO/(Zn,Mg)O quantum wells.. 9th Physics of Light-Matter Coupling and Nanostructures - PLMCN., Apr 2009, Lecce, Italy. 〈hal-00797192〉
  • Pierre Corfdir, Pierre Lefebvre, J. Ristic, Samuel Sonderegger, Laurent Balet, et al.. Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.. Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea. 〈hal-00797195〉
  • Samuel Sonderegger, Pierre Corfdir, Laurent Balet, J. Ristic, Pierre Lefebvre, et al.. Picosecond time-resolved cathodoluminescence to study GaN based materials. 2nd GCOE International Symposium on Photonics and Electronics Science and Engineering, Mar 2009, Kyoto, Japan. 〈hal-00797197〉
  • P. Corfdir, Pierre Lefebvre, J. Levrat, Amélie Dussaigne, J. Ristic, et al.. Emission properties of basal stacking faults in a-plane gallium nitride. 9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors. BIAMS 2008, Jun 2008, Tolède, Spain. 〈hal-00390009〉
  • P. Corfdir, J. Ristic, Pierre Lefebvre, E. Calleja, Jean-Daniel Ganière, et al.. Time-resolved photoluminescence of GaN nanocolumns grown by molecular beam epitaxy on Si.. International Workshop on Nitride Semiconductors – IWN08, Oct 2008, Montreux, Switzerland. 〈hal-00390010〉
  • Stéphane Faure, Thierry Guillet, P. Lefebvre, T. Bretagnon, T. Taliercio, et al.. Which quasi-particles in wide band gap bulk microcavities ?. 8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan. 〈hal-00388717〉
  • Thierry Guillet, Richard Bardoux, B. Gil, P. Lefebvre, T. Bretagnon, et al.. Emission polarisée d'une boîte quantique unique GaN/AlN : expérience et théorie. 11ème Journées de la Matière Condensée, Aug 2008, Strasbourg, France. 〈hal-00389559〉
  • Thierry Guillet, Richard Bardoux, B. Gil, T. Bretagnon, P. Lefebvre, et al.. Polarized emission from a single GaN/AlN quantum dot : Experiment and theory. International Conference on LightMatter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan. 〈hal-00389909〉
  • P. Lefebvre, Thierry Guillet, Richard Bardoux, B. Gil, T. Bretagnon, et al.. Polarized emission from a single GaN/AlN quantum dot : Experiment and theory. International Workshop on Nitride Semiconductors (IWN2008), Oct 2008, Montreux, Switzerland. 〈hal-00389910〉
  • Pierre Lefebvre. Propriétés optiques de nanostructures à base de ZnO. 12èmes Journées Nano, Micro et Optoélectroniques, Jun 2008, Saint-Pierre d'Oléron, France. 〈hal-00389974〉
  • Stéphane Faure, Thierry Guillet, T. Bretagnon, P. Lefebvre, B. Gil. Etude du couplage fort exciton-photon dans les microcavités massives ZnO par photoluminescence. 11ème Journées de la Matière Condensée (JMC11), Aug 2008, Strasbourg, France. 〈hal-00389906〉
  • Pierre Lefebvre. Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE. 14th European Molecular Beam Epitaxy Workshop (Euro-MBE), Mar 2008, Grenade, Spain. 〈hal-00389978〉
  • Thierry Bretagnon, Stéphane Faure, Thierry Guillet, Pierre Lefebvre, Bernard Gil, et al.. Internal electric field in ZnO/Zn1-xMgxO in single quantum wells.. Fifth International Workshop on Zinc Oxide and Related Materials., Sep 2008, Ypsilanti, Michigan., United States. 〈hal-00797187〉
  • Jean-Claude Tedenac, Aude. Mezy, Corine Gerardin, Didier Tichit, S. Suwanboon, et al.. Morphology control of ZnO nanomaterials using double hydrophilis block polymers. 2007 MRS fall meeting, Nov 2007, Boston, United States. pp.1, 2007. 〈hal-00279166〉
  • Jean-Claude Tedenac, Aude. Mezy, T. Bretagnon, Benoit Coasne, Corine Gerardin, et al.. Synthes de nanofils de ZnO dans des matériaux poreux ordonnés: experience et simulation moléculaire. Matériaux 2006, Nov 2007, France. 〈hal-00339577〉
  • Pierre Lefebvre. Unusual dynamics of time-resolved emission from wide-band gap quantum dots.. Workshop on Advances in Physics and Applications of Low-Dimensional Systems, Jul 2007, Brazilia, Brazil. 〈hal-00389998〉
  • Pierre Lefebvre. Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn,Mg)O quantum wells grown by MBE. . 14th Euro-MBE Workshop., Mar 2007, Grenade, Spain. 〈http://www.isom.upm.es/mbe2007/index.html〉. 〈hal-01306409〉
  • Richard Bardoux, Pierre Lefebvre, Thierry Guillet, Thierry Bretagnon, Thierry Taliercio, et al.. Micro-Photoluminescence of isolated GaN/AlN hexagonal QDs: Role of the trapping dynamics of charges at AlN defects . 14th European Molecular Beam Epitaxy Workshop (14th Euro-MBE), Mar 2007, Grenade, Spain. 〈http://www.isom.upm.es/mbe2007/prog.html〉. 〈hal-01306794〉
  • Richard Bardoux, Pierre Lefebvre, Thierry Guillet, Thierry Bretagnon, Thierry Taliercio, et al.. Linear polarization of the emission of a single polar GaN/AlN quantum dot. 7th International Conference of Nitride Semiconductors (ICNS-7) , Sep 2007, Las Vegas, United States. 〈http://www.tms.org/meetings/specialty/icns7/home.html〉. 〈hal-01306799〉
  • Aude Mezy, S. Suwanboon, Didier Ravot, Jean-Claude Tedenac, Corine Gérardin, et al.. Contrôle de la croissance de nanomatériaux d'oxyde de zinc par des copolymères diblocs hydrophiles.. Matériaux 2006, Nov 2006, Dijon, France. 〈http://www.ffmateriaux.org/SiteM2006/indexMat2006.htm〉. 〈hal-01309706〉
  • Christian Morhain, Jean-Michel Chauveau, M. Teisseire, B. Lo, M. Laügt, et al.. Polar and non-polar ZnO/ZnMgO quantum well heterostructures . International Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France. 〈hal-01309700〉
  • Aude Mezy, Jean-Claude Tedenac, Benoît Coasne, S. Suwanboon, Didier Ravot, et al.. Synthèse de nanofils de ZnO dans des Matériaux Poreux Ordonnés: Experience et Simulation Moléculaire.. Matériaux 2006, Nov 2006, Dijon, France. 〈http://www.ffmateriaux.org/SiteM2006/indexMat2006.htm〉. 〈hal-01309705〉
  • Pierre Lefebvre, Thierry Bretagnon, Thierry Taliercio, Thierry Guillet, Bernard Gil, et al.. Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots.. 6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany. 〈http://physicsworld.com/cws/event/6179〉. 〈hal-01309937〉
  • Richard Bardoux, Thierry Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, et al.. Study of Sharp Photoluminescence Spectra of Individual GaN/AlN Quantum Dots. Spectral Diffusion Effects.. International Workshop on Nitrides Semiconductors (IWN), Oct 2006, Kyoto, Japan. 〈hal-00389908〉
  • Richard Bardoux, T. Bretagnon, Thierry Guillet, P. Lefebvre, T. Taliercio, et al.. Radiative lifetime in wurtzite GaN/AlN quantum dots.. International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. 4, pp.183, 2007, 〈10.1002/pssc.200673559〉. 〈hal-00389911〉
  • Thierry Guillet, Thierry Bretagnon, Thierry Taliercio, Pierre Lefebvre, Bernard Gil, et al.. Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells. J. Christen; A. Krost; F. Bertram. 6th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2006), Sep 2006, Magdeburg, Germany. Elsevier, Superlattices and Microstructures, 41 (5-6), pp.352, 2007, 6th International Conference on Physics of Light-Matter Coupling in Nanostructures. 〈http://www.plmcn6.org/〉. 〈10.1016/j.spmi.2007.03.030〉. 〈hal-01308666〉
  • Pierre Lefebvre. Optical properties of quantum nanostructures based on wide band-gap semiconductor compounds.. 6th French-Japanese Workshop on Nanomaterials. , Mar 2006, Sapporo, Japan. 〈hal-01309482〉
  • Thierry Taliercio, Pierre Valvin, Romuald Intartaglia, Vincent Sallet, J.C. Harmand, et al.. Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots. 5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5). , Jun 2005, Glasgow, United Kingdom. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Physica Status Solidi (a)., 202 (14), pp.2598-2603, 2005, 〈10.1002/pssa.200562030〉. 〈hal-01309747〉
  • Thierry Bretagnon, Pierre Valvin, Pierre Lefebvre, Bernard Gil, Christian Morhain, et al.. Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells. Shu Ping Lau; Siu Fung Yu; Gyu-Chul Yi; Masashi Kawasaki. International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N — ZnO and Related Materials, Jul 2005, Singapour, Singapore. Elsevier, Superlattices and Microstructures, 287 (1), pp.12-15, 2006, Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N — ZnO and Related Materials. 〈http://www.mrs.org.sg/society/public.asp?page=icmatmeetings.htm〉. 〈10.1016/j.jcrysgro.2005.10.034〉. 〈hal-01309928〉
  • Romuald Intartaglia, Thierry Taliercio, Pierre Valvin, Guilhem Almuneau, Pierre Lefebvre, et al.. Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells. 5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5)., Jun 2005, Glasgow, United Kingdom. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Physica Status Solidi (c), 2 (11), pp.3887, 2005, 〈10.1002/pssc.200562039〉. 〈hal-01309930〉
  • Thierry Bretagnon, Pierre Valvin, Pierre Lefebvre, Bernard Gil, Christian Morhain. Time resolved photoluminescence of ZnO / (Zn,Mg)O quantum wells. Internal electric field effects.. E-MRS Spring Meeting - Symposium G : ZnO and Related Materials., May 2005, Strasbourg, France. 〈hal-01309933〉
  • K. Zitouni, A. Kadri, Pierre Lefebvre, Bernard Gil. k.P energy band structure of ZnO/Zn1-xMgxO quantum well heterostructures. E-MRS Spring Meeting, May 2005, Strasbourg, France. 39, pp.91, 2006, 〈10.1016/j.spmi.2005.08.033〉. 〈hal-00389991〉
  • Aude Mezy, Stéphanie Anceau, T. Bretagnon, Pierre Lefebvre, T. Taliercio, et al.. Optical properties of ZnO nanorods and nanowires. E-MRS Spring Meeting, May 2005, Strasbourg, France. 39, pp.358, 2006, 〈10.1016/j.spmi.2005.08.079〉. 〈hal-00389990〉
  • Aude Mezy, Didier Ravot, Corine Gerardin, Didier Tichit, Jean-Claude Tedenac, et al.. Morphology Control of ZnO Nanomaterials using Double Hydrophilic Block Copolymers. MRS Fall Meeting, Dec 2005, Boston, United States. 901, pp.Rb15-05.1, 2006. 〈hal-00389989〉
  • Pierre Lefebvre, Sokratis Kalliakos, Thierry Bretagnon, Thierry Taliercio, Bernard Gil, et al.. Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.. E-MRS Spring Meeting - Symposium L., May 2004, Strasbourg, France. 〈hal-01310227〉
  • Romuald Intartaglia, Thierry Taliercio, Pierre Lefebvre, Thierry Bretagnon, Thierry Guillet, et al.. Carrier recombination processes in GaAsN: from the dilute limit to alloying . E-MRS Spring Meeting, May 2004, Strasbourg, France. IET, IEE Proceedings - Optoelectronics., 151 (5), pp.365, 2004, 〈10.1049/ip-opt:20040867〉. 〈hal-01310044〉
  • Pierre Lefebvre, Aurélien Morel, Thierry Taliercio, Sokratis Kalliakos, Bernard Gil. New model of electron-hole pair recombination in (Ga,In)N/GaN low-dimensional systems. 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. 〈hal-01312484〉
  • Pierre Lefebvre. Original physical properties of low-dimensional systems based on group-III nitride semiconductors. . 1st E-MRS Fall Meeting ., Sep 2003, Varsovie, Poland. 〈https://searchworks.stanford.edu/view/5599295〉. 〈hal-01312286〉
  • Stéphanie Anceau, Pierre Lefebvre, Tadeusz Suski, S. Lepkowsky, Henryk Teisseyre, et al.. Surprisingly low built-in electric fields in quaternary InAlGaN heterostructures. . 1st E-MRS Fall Meeting ., Sep 2003, Varsovie, Poland. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Physica Status Solidi (a), 201 (2), pp.190-194, 2004, 〈10.1002/pssa.200303980〉. 〈hal-01312293〉
  • Thierry Taliercio, Bernard Gil, Pierre Lefebvre, Marie-Amandine Pinault, Eric Tournié. Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN. Axel Hoffmann; Angela Rizzi. International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Physica Status Solidi (b), 234 (3), pp.778-781, 2002, 〈http://onlinelibrary.wiley.com/doi/10.1002/1521-3951%28200210%29233:3%3C555::AID-PSSB555%3E3.0.CO;2-B/abstract〉. 〈10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H〉. 〈hal-01319577〉
  • Aurélien Morel, Pierre Lefebvre, Thierry Taliercio, Bernard Gil, Nicolas Grandjean, et al.. Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells. Xavier Marie; Thierry Amand; Chantal Fontaine; Jesse Groenen; Adnen Mlayah. International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. Elsevier Science B.V., Physica E: Low-dimensional Systems and Nanostructures., 17, pp.64-67, 2003, Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002. 〈http://www.sciencedirect.com/science/article/pii/S1386947703002029〉. 〈10.1016/S1386-9477(02)00762-2〉. 〈hal-01319596〉
  • Sokratis Kalliakos, Pierre Lefebvre, Thierry Taliercio. Photo-induced interband absorption in group-III nitride quantum wells. International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. Elsevier, 17, pp.247-249, 2003, Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002. 〈http://www.sciencedirect.com/science/article/pii/S1386947703002029〉. 〈10.1016/S1386-9477(02)00785-3〉. 〈hal-01322938〉
  • Pierre Lefebvre. Optical properties of group-III nitride based quantum wells and quantum boxes.. J. Breza; F. Dubecky; B. Zat'ko. 12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. , Jun 2002, Smolenice, Slovakia. IEEE, Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on, pp.227 - 232 Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on. 〈http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=8804〉. 〈10.1109/SIM.2002.1242761〉. 〈hal-01316057〉
  • Henryk Teisseyre, Tadeusz Suski, S. Lepkowsky, Stéphanie Anceau, Piotr Perlin, et al.. Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures. Axel Hoffmann; Angela Rizzi. International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Physica Status Solidi (b), 234 (3), pp.764-768, 2002, 〈http://onlinelibrary.wiley.com/doi/10.1002/1521-3951%28200210%29233:3%3C555::AID-PSSB555%3E3.0.CO;2-B/abstract〉. 〈10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0〉. 〈hal-01319469〉
  • J. Allegre, Pierre Lefebvre, Sandrine Juillaguet, Jean Camassel, Wojciech Knap, et al.. Optical properties of InGaN/GaN multiple quantum wells. 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. TRANSTEC PUBLICATIONS LTD, BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND, 264-2, pp.1295-1298, 1998. 〈hal-00543785〉

Poster44 documents

  • F Fedichkin, P Andreakou, P Valvin, M Vladimirova, T Guillet, et al.. Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.. Compound Semiconductor Week 2014, May 2014, Montpellier, France. 〈http://www.csw2014.org/〉. 〈hal-01305161〉
  • Fedor Fedichkin, Peristera Andreakou, Pierre Valvin, Maria Vladimirova, Thierry Guillet, et al.. Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells. . Condensed Matter in Paris – CMD25 – JMC14. , Aug 2014, Paris, France. 〈http://cmd25jmc14.sciencesconf.org/〉. 〈hal-01305395〉
  • Pierre Lefebvre, Christelle Brimont, Pierre Valvin, Bernard Gil, H. Miyake, et al.. Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structures. International Conference on Nitride Semiconductors – ICNS10., Aug 2013, Washington DC, United States. Physica Status Solidi A, 211 (4), pp.765, 2014, 〈10.1002/pssa.201300505〉. 〈hal-01021458〉
  • Andreas Kruse, Pierre Valvin, Maria Vladimirova, Thierry Guillet, Thierry Bretagnon, et al.. Dipolar exciton fluids in (Al,Ga)N/GaN quantum wells. 14th International Conference on the Physics of Light-Matter Coupling in Nanostructures - PLMCN14, May 2013, Hersonissos, Crète, Greece. 〈http://plmcn14.com/〉. 〈hal-01306241〉
  • Pierre Lefebvre, Christelle Brimont, Thierry Guillet, Thierry Bretagnon, Bernard Gil, et al.. Optical properties of a hybrid nitride-ZnO microcavity.. SPIE-OPTO-Photonic West. "Gallium Nitride Materials & Devices VII"., Jan 2012, San Francisco, United States. 〈hal-00708677〉
  • Pierre Corfdir, Pierre Lefebvre. Role of the dielectric mismatch on the emission properties of GaN nanostructures.. International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan. 〈hal-00708726〉
  • Manuel Lopez-Ponce, Pierre Lefebvre, Christelle Brimont, Pierre Valvin, J.-M. Ulloa, et al.. Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires.. International Workshop on ZnO and Related Materials., Sep 2012, Nice, France. 〈hal-00708706〉
  • Pierre Corfdir, Pierre Lefebvre. Excitonic effects in GaN stacking faults and crystal phase quantum wells. International Conference on the Physics of Semiconductors, Jul 2012, Zürich, Switzerland. 〈hal-00708666〉
  • Pierre Lefebvre, Christelle Brimont, Pierre Valvin, H. Miyake, K. Hiramatsu, et al.. Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.. International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan. 〈hal-00797472〉
  • Pierre Corfdir, J. Levrat, G. Rossbach, R. Butté, E. Feltin, et al.. Dynamics of cavity biexcitons in III-Nitride based multi quantum well Microcavities. Optics of Excitons in Confined Systems (OECS 12)., Sep 2011, Paris, France. 〈hal-00631405〉
  • Zarko Gacevic, Pierre Lefebvre, Frank Bertram, G. Schmidt, P. Veit, et al.. Growth and Characterization of InGaN/GaN Quantum Dots for violet-blue Applications. 9th International Conference on Nitride Semiconductors - ICNS9., Jul 2011, Glasgow, United Kingdom. 〈hal-00632224〉
  • Pierre Corfdir, Amélie Dussaigne, H. Teisseyre, Izabella Grzegory, Tadeusz Suski, et al.. Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals.. 9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom. 〈hal-00631755〉
  • Pierre Corfdir, Amélie Dussaigne, H. Teisseyre, Izabella Grzegory, Tadeusz Suski, et al.. Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals.. 38th International Symposium on Compound Semiconductors - ISCS38., May 2011, Berlin, Germany. 〈hal-00632230〉
  • Pierre Corfdir, Pierre Lefebvre, Amélie Dussaigne, J. Ristic, T. Zhu, et al.. Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.. 10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors - BIAMS 2010, Jul 2010, Halle (Saale), Germany. 〈hal-00634162〉
  • Pierre Corfdir, Dobri Simeonov, E. Feltin, J.F. Carlin, Pierre Lefebvre, et al.. Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets.. Otwin Breitenstein, Hartmut S. Leipner. (10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond - BIAMS 2010jul. 2010, Jul 2010, Halle, Germany. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 8 (4), pp.1394, 2011, 〈10.1002/pssc.201084005〉. 〈hal-00631325〉
  • Steven Albert, J. Grandal, M.A. Sanchez-Garcia, Pierre Lefebvre, J. Ristic, et al.. MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates.. 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Aug 2010, Berlin, Germany. 〈hal-00633522〉
  • S. Fernandez-Garrido, J. Grandal, Pierre Lefebvre, M.A. Sanchez-Garcia, E. Calleja. GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters.. 3rd International Symposium on Growth of III-Nitrides - ISGN3., Jul 2010, Montpellier, France. 〈hal-00633536〉
  • Pierre Corfdir, Amélie Dussaigne, Pierre Lefebvre, H. Teisseyre, Jean-Daniel Ganière, et al.. Radiative lifetimes of localized and free excitons in homoepitaxial non-polar (Al,Ga)N/GaN single quantum well.. 39 th International School and Conference on the Physics of Semiconductors., Jun 2010, Jaszowiec, Poland. 〈hal-00634159〉
  • Pierre Corfdir, Amélie Dussaigne, Pierre Lefebvre, H. Teisseyre, Tadeusz Suski, et al.. Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN.. International Workshop on Nitride Semiconductors - IWN 2010, Sep 2010, Tampa, Floride., United States. 〈hal-00633505〉
  • Stéphane Faure, Thierry Guillet, Christelle Brimont, Thierry Bretagnon, Pierre Lefebvre, et al.. Strong coupling of multiple branches polariton in a ZnO microcavity.. Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain. 〈hal-00797194〉
  • Pierre Corfdir, Pierre Lefebvre, J. Ristic, Amélie Dussaigne, Samuel Sonderegger, et al.. Exciton localization on basal stacking faults in a-plane GaN probed by picosecond time-resolved cathodoluminescence.. Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain. 〈hal-00797193〉
  • Samuel Sonderegger, Pierre Corfdir, Laurent Balet, Pierre Lefebvre, Denis Martin, et al.. Optical properties of V-pits in GaN through temperature-dependent picosecond Time-Resolved Cathodolminescence (pTRCL). Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea. 〈hal-00797196〉
  • Pierre Corfdir, Jean-Daniel Ganière, J. Ristic, Pierre Lefebvre, B. Deveaud, et al.. Spectroscopy of GaN nanocolumns grown by molecular beam epitaxy on Si.. Meeting annuel de la Société Suisse de Physique., Mar 2008, Genève, Switzerland. 〈hal-00797191〉
  • Stéphane Faure, Thierry Guillet, Pierre Lefebvre, Thierry Bretagnon, Thierry Taliercio, et al.. Which quasi-particle in wide band gap bulk microcavities? . 2nd International School on Nanophotonics , Sep 2007, Maratea, Italy. 〈http://afrodite.eln.uniroma2.it/maratea2007/index.htm〉. 〈hal-01306849〉
  • Thierry Bretagnon, Thierry Guillet, Pierre Lefebvre, Thierry Taliercio, Bernard Gil, et al.. Determination of internal electric field in ZnO/(Zn,Mg)O quantum wells from time resolved photoluminescence experiments. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. 〈http://www.icps2006.at/〉. 〈hal-01309701〉
  • Thierry Bretagnon, Pierre Lefebvre, Bernard Gil, Christian Morhain. ZnO / (Zn,Mg)O Quantum Wells : a Time Resolved Photoluminescence Study . International Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France. 〈hal-01309698〉
  • Richard Bardoux, Thierry Guillet, Pierre Lefebvre, Thierry Taliercio, Thierry Bretagnon, et al.. Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipole . Wolfgang Jantsch; Friederich Schafler. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. AIP Publishing, AIP Conference Proceedings, 893, pp.941, 2007, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. 〈http://www.icps2006.at/〉. 〈10.1063/1.2730203〉. 〈hal-01309696〉
  • Henryk Teisseyre, C. Skierbiszewski, Boleslaw Łucznik, Kamler G., Feduniewicz A., et al.. Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates.. 6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany. 〈http://physicsworld.com/cws/event/6179〉. 〈hal-01309939〉
  • Robert Czernecki, Piotr Perlin, G. Franssen, T. Swietlik, J. Borysiuk, et al.. Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals.. 6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany. 〈http://physicsworld.com/cws/event/6179〉. 〈hal-01309942〉
  • Thierry Bretagnon, Pierre Lefebvre, Pierre Valvin, Thierry Taliercio, Thierry Guillet, et al.. Carrier recombination dynamics in GaN/AlN quantum dots.. EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France. 〈hal-01310832〉
  • Laurent Chusseau, Pierre Lefebvre, Thierry Bretagnon, Bernard Gil. Evidence de l'interaction dipôle-dipôle dans la photoluminescence résolue en temps des boîtes quantiques GaN/AlN.. Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France. 〈http://www.jnmo.online.fr/JNMO2004/bienvenue.html〉. 〈hal-01312278〉
  • Romuald Intartaglia, Thierry Taliercio, Pierre Valvin, Thierry Guillet, Thierry Bretagnon, et al.. Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs.. 9èmes Journées de la Matière Condensée, Aug 2004, Nancy, France. 〈hal-01312282〉
  • Thierry Taliercio, Sébastien Rousset, Pierre Lefebvre, Thierry Bretagnon, Thierry Guillet, et al.. Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillars. European Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices., May 2004, Strasbourg, France. Elsevier, Superlattices and Microstructures, 36 (4-6), pp.783-790, 2004, European Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices. 〈10.1016/j.spmi.2004.09.034〉. 〈hal-01312254〉
  • Pierre Lefebvre, Thierry Bretagnon, Thierry Taliercio, Thierry Guillet, Bernard Gil, et al.. Malices et fourberies des boîtes quantiques GaN/AlN.. Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France. 〈http://www.jnmo.online.fr/JNMO2004/bienvenue.html〉. 〈hal-01312258〉
  • Pierre Lefebvre, Thierry Bretagnon, Thierry Taliercio, Thierry Guillet, Bernard Gil, et al.. Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.. Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland. 〈hal-01312253〉
  • S. Kalliakos, Thierry Bretagnon, Pierre Lefebvre, Sandrine Juillaguet, T. Taliercio, et al.. Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots. Eun-Kyung Suh; Euijoon Yoon; Hyung Jae Lee. 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Physica Status Solidi (b), 241 (12), pp.2779-2782, 2004, 〈http://onlinelibrary.wiley.com/doi/10.1002/pssc.200490022/pdf〉. 〈10.1002/pssb.200404996〉. 〈hal-00543738〉
  • Stéphanie Anceau, Pierre Lefebvre, Tadeusz Suski, Leszek Konczewicz, H Hirayama, et al.. Amélioration de l’efficacité radiative dans les puits quantiques à base d’(Al,Ga,In)N pour les composants optoélectroniques. Journées du GDR "Semiconducteurs à Grands Gaps"., May 2004, Fréjus, France. 〈hal-01312280〉
  • Stéphanie Anceau, Pierre Lefebvre, Tadeusz Suski, Leszek Konczewicz, H Hirayama, et al.. Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate . Jean Camassel; Sylvie Contreras; Sandrine Juillaguet. EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Physica Status Solidi (a), 202 (4), pp.642, 2005, 〈10.1002/pssa.200460455〉. 〈hal-01310242〉
  • Romuald Intartaglia, Thierry Taliercio, Bernard Gil, Pierre Lefebvre, Pierre Valvin, et al.. Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers . 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Physica Status Solidi (c), 0, pp.2631, 2003, 〈10.1002/pssc.200303271〉. 〈hal-01312489〉
  • Pierre Lefebvre, Sokratis Kalliakos, Thierry Taliercio. Nonlinear optical absorption induced by high photo-excitation of group-III nitride based quantum wells. 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. 〈http://onlinelibrary.wiley.com/doi/10.1002/pssa.200306690/abstract〉. 〈hal-01312666〉
  • S. Kalliakos, Thierry Bretagnon, Pierre Lefebvre, Sandrine Juillaguet, T. Taliercio, et al.. Optical properties of GaN/AlN quantum boxes under high photo-excitation. 5th International Conference on Nitride Semiconductors (ICNS-5), May 2003, Nara, Japan. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Physica Status Solidi (c), 0, pp.2666-2669, 2003, 〈http://onlinelibrary.wiley.com/doi/10.1002/pssa.200306690/abstract〉. 〈10.1002/pssc.200303270〉. 〈hal-00543736〉
  • Stéphanie Anceau, S. Lepkowsky, Henryk Teisseyre, Tadeusz Suski, Piotr Perlin, et al.. Small internal electric fields in quaternary InGaAlN heterostructures . Michael Shur; Arturas Zukauskas. NATO Advanced Research Workshop on UV Solid State Light Emitters and Detectors., Jun 2003, Vilnius, Lithuania. Kluwer Academic Publisher, Dordrecht, Pays-Bas.; lOS Press, Amsterdam, Pays-Bas.; NATO Scientific Affairs Division., 144, pp.215-222, UV Solid-State Light Emitters and Detectors. NATO Science Series II: Mathematics, Physics and Chemistry. 〈http://www.springer.com/us/book/9781402020346〉. 〈10.1007/978-1-4020-2103-9〉. 〈hal-01312494〉
  • Stéphanie Anceau, Henryk Teisseyre, Tadeusz Suski, S. Lepkowsky, Leszek Konczewicz, et al.. Evolution of internal electric fields with the wel thickness of quaternary InAlGaN quantum wells. Joint 19th AIRAPT - 41th EHPRG Int. Conf. on High Pressure Science and Technology , Jul 2003, Bordeaux, France. 〈hal-01312667〉
  • Henryk Teisseyre, Tadeusz Suski, S. Lepkowsky, Stéphanie Anceau, Piotr Perlin, et al.. Internal electric fields in quaternary InAlGaN heterostructures . 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. 〈http://onlinelibrary.wiley.com/doi/10.1002/pssa.200306690/abstract〉. 〈hal-01312665〉