Nombre de documents

8

CV de Pierre Huguet


Communication dans un congrès4 documents

  • Benoit Lambert, Nathalie Malbert, Nathalie Labat, Andre Touboul, Pierre Huguet. Influence of thermal and impact ionization stresses on AlGaAs/InGaAs HEMT DC performances. International Symposium on Physical and Failure Analysis of Integrated Circuits, 2001, Singapour. NC, pp.1, 2001. <hal-00183514>
  • Benoit Lambert, Nathalie Malbert, Nathalie Labat, Andre Touboul, Pierre Huguet, et al.. Analysis of LF noise evolution in power HEMT after DC step lifetests. 16th International Conference on Noise in Physical Systems and 1/f Fluctuations, 2001, États-Unis. NC, pp.1, 2001. <hal-00183513>
  • Benoit Lambert, Nathalie Malbert, Nathalie Labat, Andre Touboul, Pierre Huguet. Breakdown voltage of AlGaAs/InGaAs HEMT submitted to life-tests in impact ionization regime. IEEE GaAs Reliability Workshop, 2000, États-Unis. NC, pp.1, 2000. <hal-00183517>
  • Nathalie Malbert, Benoit Lambert, Cristell Maneux, Nathalie Labat, Andre Touboul, et al.. Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis. IEEE GaAs Reliability Workshop, 1999, États-Unis. NC, pp.1, 1999. <hal-00183476>

Article dans une revue4 documents

  • Philippe Dussart, Gaëlle Cartet, Pierre Huguet, Nicolas Lévêque, Christian Hajjar, et al.. Outbreak of acute hemorrhagic conjunctivitis in French Guiana and West Indies caused by coxsackievirus A24 variant: phylogenetic analysis reveals Asian import.. Journal of Medical Virology, Wiley-Blackwell, 2005, 75 (4), pp.559-65. <10.1002/jmv.20304>. <pasteur-00584126>
  • Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, Andre Touboul, et al.. Evolution of LF noise in power PHEMTs submitted to RF and DC step Stresses. Microelectronics Reliability, Elsevier, 2001, 39, pp.1. <hal-00183495>
  • Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, Andre Touboul, et al.. Comparison of RF and DC life-test effects on GaAs power MESFETs. Microelectronics Reliability, Elsevier, 2000, 40, pp.1. <hal-00183497>
  • Nathalie Malbert, Benoit Lambert, Cristell Maneux, Nathalie Labat, Andre Touboul, et al.. Effects of RF life-test on LF electrical parameters of GaAs power MESFETs. Microelectronics Reliability, Elsevier, 1999, 39, pp.1. <hal-00183094>