Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures
Thi Huong Ngo
,
Bernard Gil
,
Pierre Valvin
,
B. Damilano
,
Kaddour Lekhal
,
et al.
Article dans une revue
hal-01203313v1
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Analyzing full-polarized metasurface holograms by vectorial ptychography
Arthur Baroni
,
Virginie Chamard
,
Qinghua Song
,
Rajath Sawant
,
Peinan Ni
,
et al.
Focus On Microscopy 2020 (FOM 2020) (Canceled Covid-19) , Apr 2020, Osaka, Japan
Communication dans un congrès
hal-02537380v1
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Vectorial Hologram Based on Pixelated Metasurface
Qinghua Song
,
Arthur Baroni
,
Rajath Sawant
,
Peinan Ni
,
Virginie Brandli
,
et al.
Communication dans un congrès
hal-02962142v1
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Terahertz intersubband absorption of GaN/ AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates
A Jollivet
,
M Tchernycheva
,
V Trinité
,
E Frayssinet
,
P de Mierry
,
et al.
Article dans une revue
hal-03023702v1
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Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
Julien Brault
,
Daniel Rosales
,
B. Damilano
,
Mathieu Leroux
,
A Courville
,
et al.
Article dans une revue
hal-01025116v1
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Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures
Thi Huong Ngo
,
Bernard Gil
,
Benjamin Damilano
,
Pierre Valvin
,
A Courville
,
et al.
Article dans une revue
hal-01573934v1
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The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures
Daniel Rosales
,
Thi Huong Ngo
,
Pierre Valvin
,
K Lekhal
,
B. Damilano
,
et al.
Article dans une revue
hal-01101061v1
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The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells
Nicolas Chery
,
Thi Huong Ngo
,
M.P. Chauvat
,
B. Damilano
,
A Courville
,
et al.
Journal of Microscopy , 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313.
⟨10.1111/jmi.12657⟩
Article dans une revue
hal-01691523v1
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Internal quantum efficiency in polar and semipolar (11e22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red
Thi Huong Ngo
,
Nicolas Chery
,
Pierre Valvin
,
A Courville
,
Philippe de Miery
,
et al.
Article dans une revue
hal-01700051v1
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MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES
Atse Julien Eric N’dohi
,
Camille Sonneville
,
Soufiane Saidi
,
Thi Huong Ngo
,
P. de Mierry
,
et al.
POWER 2021 (IMAPS) , Nov 2021, Tours, France
Communication dans un congrès
hal-03676940v1
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Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells
Thi Huong Ngo
,
Bernard Gil
,
Pierre Valvin
,
Benjamin Damilano
,
K. Lekhal
,
et al.
Article dans une revue
hal-01382420v1
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Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky
Camille Sonneville
,
Atse Julien Eric N’dohi
,
S Saidi
,
T H Ngo
,
P. de Mierry
,
et al.
Conférence Internationale Matériaux , Oct 2022, Lille, France
Communication dans un congrès
hal-03844887v1
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Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression
Rami Mantach
,
P Vennéguès
,
J Zuniga Perez
,
P de Mierry
,
M Leroux
,
et al.
Article dans une revue
hal-03023829v1
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Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications
Atse Julien Eric N’dohi
,
Camille Sonneville
,
Thi Huong Ngo
,
P. de Mierry
,
Éric Frayssinet
,
et al.
EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies , Jun 2021, Bristol, United Kingdom
Communication dans un congrès
hal-03676503v1
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Multiphysics Characterizations of Vertical GaN Schottky Diodes
Atse Julien Eric N’dohi
,
Camille Sonneville
,
Soufiane Saidi
,
Thi Huong Ngo
,
P. de Mierry
,
et al.
Communication dans un congrès
hal-03844585v1
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GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers
Yvon Cordier
,
Éric Frayssinet
,
Magdalena Chmielowska
,
Maud Nemoz
,
Aimeric Courville
,
et al.
Article dans une revue
istex
hal-00966112v1
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