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Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

 Thi Huong Ngo , Bernard Gil , Pierre Valvin , B. Damilano , Kaddour Lekhal , et al.
Applied Physics Letters, 2015, 107, pp.122103. ⟨10.1063/1.4931624⟩
Article dans une revue hal-01203313v1

Analyzing full-polarized metasurface holograms by vectorial ptychography

 Arthur Baroni , Virginie Chamard , Qinghua Song , Rajath Sawant , Peinan Ni , et al.
Focus On Microscopy 2020 (FOM 2020) (Canceled Covid-19), Apr 2020, Osaka, Japan
Communication dans un congrès hal-02537380v1

Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

 Julien Brault , Daniel Rosales , B. Damilano , Mathieu Leroux , A Courville , et al.
Semiconductor Science and Technology, 2014, 29, pp.084001. ⟨10.1088/0268-1242/29/8/084001⟩
Article dans une revue hal-01025116v1

Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

 Thi Huong Ngo , Bernard Gil , Benjamin Damilano , Pierre Valvin , A Courville , et al.
Journal of Applied Physics, 2017, 122, pp.063103. ⟨10.1063/1.4997608⟩
Article dans une revue hal-01573934v1

Vectorial Hologram Based on Pixelated Metasurface

 Qinghua Song , Arthur Baroni , Rajath Sawant , Peinan Ni , Virginie Brandli , et al.
CLEO: Applications and Technology 2020, OSA / IEEE, May 2020, Wahington, DC (virtual), United States. pp.ATh4I.6, ⟨10.1364/CLEO_AT.2020.ATh4I.6⟩
Communication dans un congrès hal-02962142v1
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Terahertz intersubband absorption of GaN/ AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates

 A Jollivet , M Tchernycheva , V Trinité , E Frayssinet , P de Mierry , et al.
Applied Physics Letters, 2019, 115 (26), pp.261103. ⟨10.1063/1.5129362⟩
Article dans une revue hal-03023702v1
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Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky

 Camille Sonneville , Atse Julien Eric N’dohi , S Saidi , T H Ngo , P. de Mierry , et al.
Conférence Internationale Matériaux, Oct 2022, Lille, France
Communication dans un congrès hal-03844887v1
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Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression

 Rami Mantach , P Vennéguès , J Zuniga Perez , P de Mierry , M Leroux , et al.
Journal of Applied Physics, 2019, 125 (3), pp.035703. ⟨10.1063/1.5067375⟩
Article dans une revue hal-03023829v1

The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures

 Daniel Rosales , Thi Huong Ngo , Pierre Valvin , K Lekhal , B. Damilano , et al.
Superlattices and Microstructures, 2014, 76, pp.9. ⟨10.1016/j.spmi.2014.09.017⟩
Article dans une revue hal-01101061v1

The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

 Nicolas Chery , Thi Huong Ngo , M.P. Chauvat , B. Damilano , A Courville , et al.
Journal of Microscopy, 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313. ⟨10.1111/jmi.12657⟩
Article dans une revue hal-01691523v1

Internal quantum efficiency in polar and semipolar (11e22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red

 Thi Huong Ngo , Nicolas Chery , Pierre Valvin , A Courville , Philippe de Miery , et al.
Superlattices and Microstructures, 2018, 113, pp.129. ⟨10.1016/j.spmi.2017.10.030⟩
Article dans une revue hal-01700051v1

MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES

 Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry , et al.
POWER 2021 (IMAPS), Nov 2021, Tours, France
Communication dans un congrès hal-03676940v1

Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells

 Thi Huong Ngo , Bernard Gil , Pierre Valvin , Benjamin Damilano , K. Lekhal , et al.
Japanese Journal of Applied Physics, 2016, 55, pp.05FG10. ⟨10.7567/JJAP.55.05FG10⟩
Article dans une revue hal-01382420v1

Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications

 Atse Julien Eric N’dohi , Camille Sonneville , Thi Huong Ngo , P. de Mierry , Éric Frayssinet , et al.
EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom
Communication dans un congrès hal-03676503v1
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Multiphysics Characterizations of Vertical GaN Schottky Diodes

 Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry , et al.
2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩
Communication dans un congrès hal-03844585v1

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

 Yvon Cordier , Éric Frayssinet , Magdalena Chmielowska , Maud Nemoz , Aimeric Courville , et al.
physica status solidi (c), 2014, 11 (3-4), pp.498-501. ⟨10.1002/pssc.201300453⟩
Article dans une revue istex hal-00966112v1
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