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Patrick Girard
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- 0000-0003-0722-8772
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Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance StateElectronics, 2021, 10 (18), pp.#2222. ⟨10.3390/electronics10182222⟩
Article dans une revue
lirmm-03377249v1
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Improving TID Radiation Robustness of a CMOS OxRAM-Based Neuron Circuit by Using Enclosed Layout TransistorsIEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2021, 29 (6), pp.1122-1131. ⟨10.1109/TVLSI.2021.3067446⟩
Article dans une revue
lirmm-03376937v1
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Density Enhancement of RRAMs using a RESET Write Termination for MLC OperationMicroelectronics Reliability, 2021, 126, pp.1877-1880. ⟨10.23919/DATE51398.2021.9473967⟩
Article dans une revue
hal-03504284v1
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A CMOS OxRAM-Based Neuron Circuit Hardened with Enclosed Layout Transistors for Aerospace ApplicationsIOLTS 2020 - 26th IEEE International Symposium on On-Line Testing and Robust System Design, Jul 2020, Napoli, Italy. pp.1-6, ⟨10.1109/IOLTS50870.2020.9159709⟩
Communication dans un congrès
lirmm-03035780v1
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A Capacitor-Less CMOS Neuron Circuit for Neuromemristive NetworksNEWCAS 2019 - 17th IEEE International Conference on Electronics Circuits and Systems, Jun 2019, Munich, Germany. ⟨10.1109/NEWCAS44328.2019.8961278⟩
Communication dans un congrès
lirmm-02395325v1
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