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Dielectric Coating-Induced Absorption Enhancement in Si Nanowire Junctions
Amit Solanki
,
Pascal Gentile
,
Salim Boutami
,
Vincent Calvo
,
Nicolas Pauc
Article dans une revue
hal-01616535v1
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Tensile Strained Germanium Nanowires Measured by Photocurrent Spectroscopy and X-ray Microdiffraction
Kevin Guilloy
,
Nicolas Pauc
,
Alban Gassenq
,
Pascal Gentile
,
Samuel Tardif
,
et al.
Article dans une revue
hal-01593538v1
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STM study of ultra-thin (<2 nm) silicon oxide
P. Gentile
,
J. Eymery
,
F. Gustavo
,
P. Mur
,
J.M. Hartmann
,
et al.
Article dans une revue
istex
hal-01876870v1
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Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic application
Nadia Chehata
,
Adnen Ltaief
,
Bouraoui Ilahi
,
Bassem Salem
,
Abdelaziz Bouazizi
,
et al.
Article dans une revue
hal-01869153v1
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Tailoring Strain and Morphology of Core–Shell SiGe Nanowires by Low-Temperature Ge Condensation
Thomas David
,
Kailang Liu
,
Antoine Ronda
,
Luc Favre
,
Marco Abbarchi
,
et al.
Article dans une revue
hal-01788664v1
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Growth of SiGe NW Using Gold and Alternative Metal Catalysts
A. Potie
,
T. Baron
,
G. Rosaz
,
B. Salem
,
L. Latu-Romain
,
et al.
MRS Spring meeting, Apr 2011, San Francisco, United States
Communication dans un congrès
hal-00650029v1
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In Situ Transmission Electron Microscopy Analysis of Aluminum–Germanium Nanowire Solid-State Reaction
Khalil El Hajraoui
,
Minh Anh Luong
,
Eric Robin
,
Florian Brunbauer
,
Clemens Zeiner
,
et al.
Article dans une revue
hal-02910070v1
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Growth of Ge 1− x Sn x Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH 4 and SnCl 4
Thibault Haffner
,
Mohammed Zeghouane
,
Franck Bassani
,
Pascal Gentile
,
Alban Gassenq
,
et al.
Article dans une revue
hal-01948093v1
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Ordering of Ge quantum dots with buried Si dislocation networks
F. Leroy
,
J. Eymery
,
P. Gentile
,
F. Fournel
Applied Physics Letters, 2002, 80 (17), pp.3078-3080
Article dans une revue
cea-01989695v1
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Nonlinear strain dependences in highly strained germanium micromembranes for on-chip light source applications
Kévin Guilloy
,
Alban Gassenq
,
N. Pauc
,
J.M. Escalante
,
I. Duchemin
,
et al.
Communication dans un congrès
cea-01994511v1
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Direct nanomechanical measurement of elastic and plastic deformation of single Si nanowires grown by CVD
M. Gordon
,
T. Baron
,
F. Dhalluin
,
P. Gentile
,
P. Ferret
MRS Spring Meeting, 2006, san francisco, United States
Communication dans un congrès
hal-00395851v1
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Elaboration de Nanocristaux Silicium, propriétés électriques et optiques
T. Baron
,
F. Mazen
,
A. Souifi
,
P. Gentile
,
F. Fournel
,
et al.
VIIIème Journées de la Matière Condensée, 2002, Marseille, France
Communication dans un congrès
hal-00486149v1
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Croissance VLS de nanofils de Si de diamètre inférieur à 10 nm
F. Dhalluin
,
M. den Hertog
,
P. Gentile
,
P. Ferret
,
J.L. Rouviere
GDR Nanofils, 2007, Ecully, France
Communication dans un congrès
hal-00396923v1
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Structural investigation of silicon nanowires grown by VLS method in nanoporous alumina template on <100> silicon substrate
T. David
,
D. Buttard
,
M. den Hertog
,
P. Gentile
,
P. Ferret
,
et al.
E-MRS, 2007, strasbourg, France
Communication dans un congrès
hal-00395907v1
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Redefining high-k dielectric materials vision at nanoscale for energy storage: A new electrochemically active protection barrier
Anthony Valero
,
Adrien Mery
,
Dorian Gaboriau
,
Marc Dietrich
,
Maggie Fox
,
et al.
Article dans une revue
hal-03355843v1
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Functionalized silicon nanowires/conjugated polymer hybrid solar cells: Optical, electrical and morphological characterizations
N. Chehata
,
A. Ltaief
,
Emmanuel Beyou
,
B. Ilahi
,
B. Salem
,
et al.
Article dans une revue
hal-01265838v1
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Si and SiGe Nanowires Field-effect Transistors Study Toward Vertical Integration
G. Rosaz
,
B. Salem
,
N. Pauc
,
T. Baron
,
P. Gentile
,
et al.
Colloque LIA-LN2, Jul 2011, Allevard les bains, France
Communication dans un congrès
hal-00647422v1
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Confined growth of silicon nanowires as a possible process for third generation solar cells
D. Buttard
,
L. Dupré
,
T. Bernardin
,
M. Zelsmann
,
D. Peyrade
,
et al.
Physica Status Solidi, 2010, doi: 10.1002/pssc.201000340
Article dans une revue
hal-00623542v1
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Influence of the Dielectric Environment on the Absorption Properties of Single Silicon Nanowires
A. Solanki
,
N. Pauc
,
P. Gentile
,
V. Calvo
,
G. Rosaz
,
et al.
E-MRS Strasbourg (2012), 2012, Strasbourg, France
Communication dans un congrès
hal-00762162v1
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Caractérisation de nanofils Ge-Si cœur-coquille par diffraction cohérente des rayons X
S. Fernández
,
M.I. Richard
,
S. Labat
,
S. Leake
,
G. Chahine
,
et al.
Meeting of the French Crystallography Association (AFC 2016), Jul 2016, Marseille, France
Communication dans un congrès
hal-01453359v1
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Nonlinear direct band gap and Raman shift strain dependence in germanium under high uniaxial stress
Kevin Guilloy
,
Alban Gassenq
,
Nicolas Pauc
,
Samuel Tardif
,
Francois Rieutord
,
et al.
E-MRS spring meeting, May 2016, lille, France
Communication dans un congrès
cea-01994354v1
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Fabrication and characterization of a germanium nanowire light emitting diode
Johannes Greil
,
Emmerich Bertagnolli
,
Bassem Salem
,
Thierry Baron
,
Pascal Gentile
,
et al.
Article dans une revue
cea-01988258v1
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Grazing Incidence X-ray Diffraction investigation of strains in silicon nanowires obtained by gold catalytic growth
D. Buttard
,
P. Gentile
,
Hubert Renevier
Article dans une revue
hal-01067027v1
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Atomic Layer Deposition of Alumina on Silicon Nanotrees, towards the development of 3D ultrastable Aqueous Si Microsupercapacitor
Anthony Valero
,
Dorian Gaboriau
,
P. Gentile
,
Saïd Sadki
233rd ECS MEETING, May 2018, Seattle, WA, United States
Communication dans un congrès
cea-01993877v1
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Control of the interfacial abruptness of Au-catalyzed Si-Si 1−x Ge x heterostructured nanowires grown by vapor–liquid–solid
Priyanka Periwal
,
Thierry Baron
,
Laurence Latu-Romain
,
Bassem Salem
,
Franck Bassani
,
et al.
Article dans une revue
hal-01869721v1
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Electrical characteristics of horizontal and vertical field-effect transistors using non-intentionally doped Si and SiGe nanowires.
G. Rosaz
,
B. Salem
,
N. Pauc
,
P. Gentile
,
A. Potié
,
et al.
4th Meeting of the French GDR "Nanofils Semiconducteurs", Jan 2011, Porquerolles, France
Communication dans un congrès
hal-00647423v1
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Controlled growth of SiGe nanowires by addition of HCl in the gas phase
A. Potié
,
T. Baron
,
L. Latu-Romain
,
G. Rosaz
,
B. Salem
,
et al.
Journal of Applied Physics, 2011, 110 (2), pp.024311
Article dans une revue
hal-00641300v1
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Dopant profiling of individual Si nanowires using scanning capacitance microscopy
F. Bassani
,
P. Periwal
,
D. Mariolle
,
N. Chevalier
,
B. Salem
,
et al.
EMRS 2013, 2013, Strasbourg, France
Communication dans un congrès
hal-00955739v1
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Catalyzed growth study and physical properties of SiGe and Ge NWs
T. Baron
,
A. Potié
,
F. Dhalluin
,
G. Rosaz
,
B. Salem
,
et al.
MRS Fall meeting, Nov 2010, Boston, United States
Communication dans un congrès
hal-00650023v1
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Enhancing the incorporation of Sn in vapor–liquid–solid GeSn nanowires by modulation of the droplet composition
Mohammed Zeghouane
,
Hadi Hijazi
,
Franck Bassani
,
Gauthier Lefevre
,
Eugenie Martinez
,
et al.
Article dans une revue
hal-03867559v1
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