pascal dherbecourt

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	GaN HEMT power amplifier design for 2.45 GHz wireless applications Paula Akossiwa Atchike , Jamal Zbitou , Ahmed El Oualkadi , Pascal Dherbécourt SAIEE Africa Research Journal, 2023, 114 (4), pp.106-113. ⟨10.23919/SAIEE.2023.10319379⟩ Article dans une revue hal-04294272v1
	PHM method for detecting degradation of GaN HEMT ON resistance, application to power converter H. Boulzazen , Chawki Douzi , Eric Joubert , Pascal Dherbécourt , Moncef Kadi e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2022, 2, pp.100060. ⟨10.1016/j.prime.2022.100060⟩ Article dans une revue hal-03872112v1
	A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications Chawki Douzi , Moncef Kadi , Moncef Kadi , Pascal Dherbécourt , Mohamed Akram Besserour Microelectronics Reliability, 2022, 138, pp.114777. ⟨10.1016/j.microrel.2022.114777⟩ Article dans une revue hal-03882052v1
	In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Mohamed Lamine Masmoudi , Joubert Eric IET Circuits, Devices & Systems, 2020, 14 (2), pp.222-228. ⟨10.1049/iet-cds.2018.5509⟩ Article dans une revue hal-04355283v1
	Estimation of losses of GaN HEMT in power switching applications based on experimental characterization Al Mehdi Bouchour , Ahmed El Oualkadi , O. Latry , Pascal Dherbécourt , Andres Echeverri Computers and Electrical Engineering, 2020, 84, pp.106622. ⟨10.1016/j.compeleceng.2020.106622⟩ Article dans une revue hal-02614065v1
	Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics Wadia Jouha , Mohamed Lamine Masmoudi , Ahmed El Oualkadi , Eric Joubert , Pascal Dherbécourt IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩ Article dans une revue hal-03174373v1
	An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET Wadia Jouha , Pascal Dherbécourt , Ahmed El Oualkadi , Eric Joubert , Mohamed Lamine Masmoudi International Journal of Information Science & Technology, 2019, ⟨10.57675/IMIST.PRSM/ijist-v3i1.44⟩ Article dans une revue hal-02295925v1
	Experimental and microscopic analysis of 600V GaN-GIT under the short-circuit aging tests Jian Zhi Fu , François Fouquet , Moncef Kadi , Pascal Dherbécourt , Fabien Cuvilly International Journal of Information Science & Technology, 2019 Article dans une revue hal-02295904v1
	Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency A.M. Bouchour , A. El Oualkadi , Pascal Dherbécourt , O. Latry , A. Echeverri Microelectronics Reliability, 2019, 100-101, pp.113403. ⟨10.1016/j.microrel.2019.113403⟩ Article dans une revue hal-03174379v1
	Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests J.Z. Fu , F. Fouquet , M. Kadi , Pascal Dherbécourt Microelectronics Reliability, 2018, 88-90, pp.652-655. ⟨10.1016/j.microrel.2018.06.034⟩ Article dans une revue hal-02181673v1
	Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition O. Latry , Pascal Dherbécourt , Patrick Denis , Fabien Cuvilly , Moncef Kadi Engineering Failure Analysis, 2018, 83, pp.185-192. ⟨10.1016/J.ENGFAILANAL.2017.09.010⟩ Article dans une revue hal-02131204v1
	Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi IEEE Transactions on Power Electronics, 2018, 33 (11), pp.9130-9133. ⟨10.1109/TPEL.2018.2822939⟩ Article dans une revue hal-02177905v1
	Reliability and failure analysis of UHF RFID passive tags under thermal storage Sanae Taoufik , Pascal Dherbécourt , Ahmed Eloualkadi , Farid Temcamani IEEE Transactions on Device and Materials Reliability, 2017, 17 (3), pp.531 - 538. ⟨10.1109/TDMR.2017.2733519⟩ Article dans une revue hal-01619293v1
	Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena O. Latry , A. Divay , D. Fadil , Pascal Dherbécourt Journal of Semiconductors, 2017, 38 (1), ⟨10.1088/1674-4926/38/1/014007⟩ Article dans une revue hal-01766037v1
	Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET S. Mbarek , Pascal Dherbécourt , O. Latry , F. Fouquet Microelectronics Reliability, 2017, 76-77, pp.527 - 531. ⟨10.1016/j.microrel.2017.07.002⟩ Article dans une revue hal-01766126v1
	Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags Sanae Taoufik , Farid Temcamani , Ahmed Eloualkadi , Bruno Delacressonniere , Pascal Dherbécourt Lecture Notes in Electrical Engineering, Springer, 2016, 1, pp.35-43. ⟨10.1007/978-3-319-30301-7_5⟩ Article dans une revue hal-01341760v1
	Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests S. Mbarek , F. Fouquet , Pascal Dherbécourt , Mohamed Lamine Masmoudi , O. Latry Microelectronics Reliability, 2016, 64, pp.415-418. ⟨10.1016/j.microrel.2016.07.132⟩ Article dans une revue hal-01954256v1
	Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis P. Denis , Pascal Dherbécourt , O. Latry , C. Genevois , Fabien Cuvilly Diamond and Related Materials, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩ Article dans une revue hal-02156382v1
	Adding channels with PSBT format at 40Gbit/s in an existing 10Gbit/s optical network F. Khecib , O. Latry , Pascal Dherbécourt , M. Kétata Optics Communications, 2011, 284 (21), pp.5125-5129. ⟨10.1016/j.optcom.2011.06.064⟩ Article dans une revue hal-02267382v1
	Characterization and modeling of hot carrier injection in LDMOS for L-band radar application L. Lacheze , O. Latry , Pascal Dherbécourt , K. Mourgues , V. Purohit Microelectronics Reliability, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩ Article dans une revue hal-02267392v1
	A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications O. Latry , Pascal Dherbécourt , K. Mourgues , H. Maanane , P. Sipma Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩ Article dans une revue hal-02267399v1

	Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements Al Mehdi Bouchour , Pascal Dherbécourt , Ahmed El Oualkadi , Olivier Latry 2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/ISAECT50560.2020.9523645⟩ Communication dans un congrès hal-03354896v1
	Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm Al Mehdi Bouchour , Pascal Dherbécourt , Andres Echeverri , Ahmed El Oualkadi , O. Latry 2018 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2018, Rabat, Morocco. pp.1-6 Communication dans un congrès hal-02131106v1
	Aging of GaN GIT under repetitive short-circuit tests J-Z. Fu , F. Fouquet , Moncef Kadi , Pascal Dherbécourt 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), May 2018, Xi'an, China. pp.189-193, ⟨10.1109/WiPDAAsia.2018.8734539⟩ Communication dans un congrès hal-02306848v1
	Experimental study of 600V GaN transistor under the short-circuit aging tests J-Z. Fu , F. Fouquet , M. Kadi , Pascal Dherbécourt 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.249-253, ⟨10.1109/MELCON.2018.8379102⟩ Communication dans un congrès hal-02181678v1
	Behavoir study of a 600v gan transistor under short-circuit experimental test Jian Zhi Fu , Francois Fouquet , Moncef Kadi , Pascal Dherbécourt TELECOM 2017 et 10ème JFMMA, May 2017, Rabat, Morocco Communication dans un congrès hal-02310344v1
	An Extraction Method of SiC Power MOSFET Threshold Voltage Ahmed Eloualkaki , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi , Wadia Jouha 3rd International Conference on Electrical and Information Technologies, Nov 2017, Rabat, Morocco. ⟨10.1007/978-3-030-05276-8_2⟩ Communication dans un congrès hal-02295944v1
	A new extraction method of SiC power MOSFET threshold voltage using a physical approach Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi 2017 International Conference on Electrical and Information Technologies (ICEIT), Nov 2017, Rabat, France. pp.1-6, ⟨10.1109/EITech.2017.8255289⟩ Communication dans un congrès hal-02177925v1
	Analyse par électroluminescence des dégradations de transistors SiC-MOSFET Pascal Dherbécourt Symposium de Genie Electrique, Jun 2016, Grenoble, France Communication dans un congrès hal-01361661v1
	Static behavior analysis of silicon carbide power MOSFET for temperature variations Wadia Jouha , Pascal Dherbécourt , Eric Joubert , Ahmed El Oualkadi 2016 International Conference on Electrical and Information Technologies (ICEIT), May 2016, Tangiers, Morocco. pp.276-280, ⟨10.1109/EITech.2016.7519605⟩ Communication dans un congrès hal-02173722v1
	Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags Sanae Taoufik , Ahmed El Oualkadi , Farid Temcamani , B Delacressonniere , Pascal Dherbécourt MEDICT, 2015, SAIDIA, France Communication dans un congrès hal-01171801v1
	Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiques Mbarek Safa , Pascal Dherbécourt , François Fouquet , Olivier Latry Télécom & JFMMA, 2015, Meknès, Maroc Communication dans un congrès hal-02407378v1
	Vieillissement thermique de diodes Schottky en carbure de silicium: validation de l'analyse de défaillance par le cas singulier Patrick Denis , Pascal Dherbécourt , O. Latry Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065192v1
	Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints Mbarek Safa , Pascal Dherbécourt , O. Latry , Francois Fouquet , Othman Dhouha CENICS, 2014, Lisbonne, Portugal Communication dans un congrès hal-01700474v1
	Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN, en bande S. Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbécourt 17èmes Journées Nationales Microondes, May 2011, Brest, France. pp.4C-2 Communication dans un congrès hal-00671523v1
	Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN. Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbécourt 13èmes Journées Nano Micro et Optoélectronique, Les Issambres (France), Sep 2010, Les Issambres, France. pp.Poster 38 Communication dans un congrès hal-00735895v1

	Analyse par électroluminescence des dégradations de transistor MOSFET en SiC Tien Anh Nguyen , Echeverri Andres , Mbarek Safa , Niemat Moultif , Pascal Dherbécourt Symposium de Génie Electrique 2016 - SGE2016, Jun 2016, Grenoble, France Poster de conférence hal-01696225v1

	Chap 2. Aging Power Transistors in Operational Conditions Pascal Dherbécourt , O. Latry , K. Dehais-Mourgues , Jean Baptiste Fonder , Cédric Duperrier Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.23-48, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50002-5⟩ Chapitre d'ouvrage hal-01740826v1
	Internal Temperature Measurement of Electronic Components Eric Joubert , Olivier Latry , Pascal Dherbécourt , Maxime Fontaine , Christian Gautier Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩ Chapitre d'ouvrage hal-02173702v1

	Reliability and Failure Analysis of UHF-RFID Tags for Harsh Environments Applications Sanae Taoufik , A. Eloualkadi , Pascal Dherbécourt , Farid Temcamani , B Delacressonniere 2016 Pré-publication, Document de travail hal-01341790v1

pascal dherbecourt

Présentation

Publications

GaN HEMT power amplifier design for 2.45 GHz wireless applications

PHM method for detecting degradation of GaN HEMT ON resistance, application to power converter

A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications

In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

Estimation of losses of GaN HEMT in power switching applications based on experimental characterization

Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET

Experimental and microscopic analysis of 600V GaN-GIT under the short-circuit aging tests

Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency

Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests

Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition

Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

Reliability and failure analysis of UHF RFID passive tags under thermal storage

Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena

Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET

Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags

Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests

Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis

Adding channels with PSBT format at 40Gbit/s in an existing 10Gbit/s optical network

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application

A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications

Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements

Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm

Aging of GaN GIT under repetitive short-circuit tests

Experimental study of 600V GaN transistor under the short-circuit aging tests

Behavoir study of a 600v gan transistor under short-circuit experimental test

An Extraction Method of SiC Power MOSFET Threshold Voltage

A new extraction method of SiC power MOSFET threshold voltage using a physical approach

Analyse par électroluminescence des dégradations de transistors SiC-MOSFET

Static behavior analysis of silicon carbide power MOSFET for temperature variations

Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags

Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiques

Vieillissement thermique de diodes Schottky en carbure de silicium: validation de l'analyse de défaillance par le cas singulier

Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints

Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN, en bande S.

Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN.

Analyse par électroluminescence des dégradations de transistor MOSFET en SiC

Chap 2. Aging Power Transistors in Operational Conditions

Internal Temperature Measurement of Electronic Components

Reliability and Failure Analysis of UHF-RFID Tags for Harsh Environments Applications

Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests