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CV Pascal Dherbécourt

Pascal Dherbécourt,

Maître de conférences Hors Classe

Section CNU 63 (Génie électrique, électronique, photonique et systèmes)

  • Adresse professionnelle :
  • Groupe de Physique des Matériaux - UMR CNRS 6634
  • Avenue de l’Université BP 76801 Saint Etienne du Rouvray Cedex
  • Tel : 02 32 95 51 57 - Email : pascal.dherbecourt@univ-rouen.fr

Université de Rouen - IUT – Département Génie Electrique et Informatique Industrielle

  • 76821 Mont Saint Aignan Cedex         Tel : 02 35 14 63 54

Septembre 2014 : Habilitation à Diriger des Recherches

Soutenue le 4 septembre 2014 au GPM Université de Rouen Normandie : « Performances et fiabilité des systèmes: Des télécommunications optiques aux composants électroniques de puissance »

Juin 2002 : Doctorat en physique à l’université de Rouen.

         Thèse soutenue le 21 juin 2002, portant sur « l’étude et réalisation d’un générateur d’onde   optique modulée en amplitude à très haute fréquence ». Application à la caractérisation spectrale des sources lasers et des photorécepteurs rapides type PIN pour les systèmes de télécommunications sur fibres optiques à très haut débit.

 

Distinction honorifique : Chevalier dans l’Ordre des Palmes Académiques promotion juillet 2009.

Journal articles17 documents

  • Wadia Jouha, Mohamed Lamine Masmoudi, Ahmed El Oualkadi, Eric Joubert, Pascal Dherbécourt. Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics. IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩. ⟨hal-03174373⟩
  • Al Mehdi Bouchour, Ahmed El Oualkadi, O. Latry, Pascal Dherbécourt, Andres Echeverri. Estimation of losses of GaN HEMT in power switching applications based on experimental characterization. Computers and Electrical Engineering, Elsevier, 2020, 84, pp.106622. ⟨10.1016/j.compeleceng.2020.106622⟩. ⟨hal-02614065⟩
  • A.M. Bouchour, A. El Oualkadi, Pascal Dherbécourt, O. Latry, A. Echeverri. Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency. Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113403. ⟨10.1016/j.microrel.2019.113403⟩. ⟨hal-03174379⟩
  • Wadia Jouha, Pascal Dherbécourt, Ahmed El Oualkadi, Joubert Eric, M Masmoudi. An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET. International Journal of Information Science & Technology, iJIST, 2019. ⟨hal-02295925⟩
  • Pascal Dherbécourt, Moncef Kadi, Jian Zhi Fu, François Fouquet, Fabien Cuvilly. Experimental and microscopic analysis of 600V GaN-GIT under the short-circuit aging tests. International Journal of Information Science & Technology, iJIST, 2019. ⟨hal-02295904⟩
  • Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Eric Joubert, Mohamed Lamine Masmoudi. Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2018, 33 (11), pp.9130-9133. ⟨10.1109/TPEL.2018.2822939⟩. ⟨hal-02177905⟩
  • J.Z. Fu, F. Fouquet, M. Kadi, Pascal Dherbécourt. Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests. Microelectronics Reliability, Elsevier, 2018, 88-90, pp.652-655. ⟨10.1016/j.microrel.2018.06.034⟩. ⟨hal-02181673⟩
  • O. Latry, Pascal Dherbécourt, Patrick Denis, Fabien Cuvilly, Moncef Kadi. Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition. Engineering Failure Analysis, Elsevier, 2018, 83, pp.185-192. ⟨10.1016/J.ENGFAILANAL.2017.09.010⟩. ⟨hal-02131204⟩
  • O. Latry, A. Divay, D. Fadil, Pascal Dherbécourt. Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena. Journal of Semiconductors, Beijing : Chinese Institute of Electronics ; Bristol : IOP,, 2017, 38 (1), ⟨10.1088/1674-4926/38/1/014007⟩. ⟨hal-01766037⟩
  • S. Mbarek, Pascal Dherbécourt, O. Latry, F. Fouquet. Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET. Microelectronics Reliability, Elsevier, 2017, 76-77, pp.527 - 531. ⟨10.1016/j.microrel.2017.07.002⟩. ⟨hal-01766126⟩
  • Sanae Taoufik, Pascal Dherbécourt, Ahmed Eloualkadi, Farid Temcamani. Reliability and failure analysis of UHF RFID passive tags under thermal storage. IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2017, 17 (3), pp.531 - 538. ⟨10.1109/TDMR.2017.2733519⟩. ⟨hal-01619293⟩
  • S. Mbarek, F. Fouquet, Pascal Dherbécourt, M. Masmoudi, O. Latry. Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests. Microelectronics Reliability, Elsevier, 2016, 64, pp.415-418. ⟨10.1016/j.microrel.2016.07.132⟩. ⟨hal-01954256⟩
  • Sanae Taoufik, Farid Temcamani, Ahmed Eloualkadi, Bruno Delacressonniere, Pascal Dherbécourt. Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags. Lecture Notes in Electrical Engineering, Springer, 2016, 1, pp.35-43. ⟨10.1007/978-3-319-30301-7_5⟩. ⟨hal-01341760⟩
  • P. Denis, Pascal Dherbécourt, O. Latry, C. Genevois, F. Cuvilly, et al.. Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis. Diamond and Related Materials, Elsevier, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩. ⟨hal-02156382⟩
  • L. Lacheze, O. Latry, Pascal Dherbécourt, K. Mourgues, V. Purohit, et al.. Characterization and modeling of hot carrier injection in LDMOS for L-band radar application. Microelectronics Reliability, Elsevier, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩. ⟨hal-02267392⟩
  • F. Khecib, O. Latry, Pascal Dherbécourt, M. Kétata. Adding channels with PSBT format at 40Gbit/s in an existing 10Gbit/s optical network. Optics Communications, Elsevier, 2011, 284 (21), pp.5125-5129. ⟨10.1016/j.optcom.2011.06.064⟩. ⟨hal-02267382⟩
  • O. Latry, Pascal Dherbécourt, K. Mourgues, H. Maanane, P. Sipma, et al.. A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications. Microelectronics Reliability, Elsevier, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩. ⟨hal-02267399⟩

Conference papers15 documents

  • Al Mehdi Bouchour, Pascal Dherbécourt, Ahmed El Oualkadi, Olivier Latry. Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements. 2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/ISAECT50560.2020.9523645⟩. ⟨hal-03354896⟩
  • J-Z. Fu, F. Fouquet, M. Kadi, Pascal Dherbécourt. Experimental study of 600V GaN transistor under the short-circuit aging tests. 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.249-253, ⟨10.1109/MELCON.2018.8379102⟩. ⟨hal-02181678⟩
  • Al Mehdi Bouchour, Pascal Dherbécourt, Andres Echeverri, Ahmed El Oualkadi, O. Latry. Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm. 2018 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2018, Rabat, Morocco. pp.1-6. ⟨hal-02131106⟩
  • J-Z. Fu, F. Fouquet, Moncef Kadi, Pascal Dherbécourt. Aging of GaN GIT under repetitive short-circuit tests. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), May 2018, Xi'an, China. pp.189-193, ⟨10.1109/WiPDAAsia.2018.8734539⟩. ⟨hal-02306848⟩
  • Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Eric Joubert, Mohamed Lamine Masmoudi. A new extraction method of SiC power MOSFET threshold voltage using a physical approach. 2017 International Conference on Electrical and Information Technologies (ICEIT), Nov 2017, Rabat, France. pp.1-6, ⟨10.1109/EITech.2017.8255289⟩. ⟨hal-02177925⟩
  • Jian Zhi Fu, Francois Fouquet, Moncef Kadi, Pascal Dherbécourt. Behavoir study of a 600v gan transistor under short-circuit experimental test. TELECOM 2017 et 10ème JFMMA, May 2017, Rabat, Morocco. ⟨hal-02310344⟩
  • Wadia Jouha, Ahmed Eloualkaki, Pascal Dherbécourt, Joubert Eric, M. Masmoudi. An Extraction Method of SiC Power MOSFET Threshold Voltage. 3rd International Conference on Electrical and Information Technologies, Nov 2017, Rabat, Morocco. ⟨10.1007/978-3-030-05276-8_2⟩. ⟨hal-02295944⟩
  • Wadia Jouha, Pascal Dherbécourt, Eric Joubert, Ahmed El Oualkadi. Static behavior analysis of silicon carbide power MOSFET for temperature variations. 2016 International Conference on Electrical and Information Technologies (ICEIT), May 2016, Tangiers, Morocco. pp.276-280, ⟨10.1109/EITech.2016.7519605⟩. ⟨hal-02173722⟩
  • Pascal Dherbécourt. Analyse par électroluminescence des dégradations de transistors SiC-MOSFET. Symposium de Genie Electrique, Jun 2016, Grenoble, France. ⟨hal-01361661⟩
  • Mbarek Safa, Pascal Dherbécourt, François Fouquet, Olivier Latry. Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiques. Télécom & JFMMA, 2015, Meknès, Maroc. ⟨hal-02407378⟩
  • S Taoufik, Ahmed El Oualkadi, Farid Temcamani, B Delacressonniere, Pascal Dherbécourt. Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags. MEDICT, 2015, SAIDIA, France. ⟨hal-01171801⟩
  • Patrick Denis, Pascal Dherbécourt, O. Latry. Vieillissement thermique de diodes Schottky en carbure de silicium: validation de l'analyse de défaillance par le cas singulier. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065192⟩
  • Mbarek Safa, Pascal Dherbécourt, O. Latry, Francois Fouquet, Othman Dhouha, et al.. Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints. CENICS, 2014, Lisbonne, Portugal. ⟨hal-01700474⟩
  • Jean Baptiste Fonder, Farid Temcamani, Cédric Duperrier, Olivier Latry, Pascal Dherbecourt, et al.. Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN, en bande S.. 17èmes Journées Nationales Microondes, May 2011, Brest, France. pp.4C-2. ⟨hal-00671523⟩
  • Jean Baptiste Fonder, Farid Temcamani, Cédric Duperrier, Olivier Latry, Pascal Dherbecourt, et al.. Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN.. 13èmes Journées Nano Micro et Optoélectronique, Les Issambres (France), Sep 2010, Les Issambres, France. pp.Poster 38. ⟨hal-00735895⟩

Poster communications1 document

  • Tien Anh Nguyen, Echeverri Andres, Mbarek Safa, Niemat Moultif, Pascal Dherbécourt, et al.. Analyse par électroluminescence des dégradations de transistor MOSFET en SiC. Symposium de Génie Electrique 2016 - SGE2016, Jun 2016, Grenoble, France. ⟨hal-01696225⟩

Book sections2 documents

  • Eric Joubert, Olivier Latry, Pascal Dherbécourt, Maxime Fontaine, Christian Gautier, et al.. Internal Temperature Measurement of Electronic Components. Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩. ⟨hal-02173702⟩
  • Pascal Dherbécourt, O. Latry, K. Dehais-Mourgues, Jean Baptiste Fonder, Cédric Duperrier, et al.. Chap 2. Aging Power Transistors in Operational Conditions. Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.23-48, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50002-5⟩. ⟨hal-01740826⟩

Preprints, Working Papers, ...1 document

  • S Taoufik, A. Eloualkadi, Pascal Dherbécourt, Farid Temcamani, B Delacressonniere. Reliability and Failure Analysis of UHF-RFID Tags for Harsh Environments Applications. 2016. ⟨hal-01341790⟩