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Olivier Latry


Professor Olivier Latry holds an MSc degree in electrical engineering from ESIGELEC Rouen, France from 1991 and a PhD degree in electrical engineering from the University of Rouen, France, from 1995. Since late 2008, he joined the « Groupe de Physique des Matériaux » UMR CNRS at the University of Rouen Normandy. He has carried out research on transistors and his major research interests today include microelectronic reliability on power transistors like Gallium Nitride High Electron Mobility Transistors (HEMT GaN) or Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors, (MOSFET SiC).

At University Institute of Technology of Rouen, he gives courses on electronics, controlled systems, microwave and radar systems.


Article dans une revue29 documents

  • Al Mehdi Bouchour, Ahmed El Oualkadi, O. Latry, Pascal Dherbécourt, Andres Echeverri. Estimation of losses of GaN HEMT in power switching applications based on experimental characterization. Computers & Electrical Engineering, 2020, 84, pp.106622. ⟨10.1016/j.compeleceng.2020.106622⟩. ⟨hal-02614065⟩
  • Sébastien Duguay, Andres Echeverri, Celia Castro, Olivier Latry. Evidence of Mg segregation to threading dislocation in normally-off GaN-HEMT. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2019, 18, pp.995-998. ⟨10.1109/TNANO.2019.2942400⟩. ⟨hal-02299201⟩
  • Niemat Moultif, Andres Echeverri, Dominique Carisetti, O. Latry, Eric Joubert. Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy. IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩. ⟨hal-02614080⟩
  • A.M. Bouchour, A. El Oualkadi, Pascal Dherbécourt, O. Latry, A. Echeverri. Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency. Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113403. ⟨10.1016/j.microrel.2019.113403⟩. ⟨hal-02380191⟩
  • N. Moultif, O. Latry, M. Ndiaye, T. Neveu, E. Joubert, et al.. S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application. Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩. ⟨hal-02380186⟩
  • O. Latry, Pascal Dherbécourt, Patrick Denis, Fabien Cuvilly, Moncef Kadi. Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition. Engineering Failure Analysis, Elsevier, 2018, 83, pp.185-192. ⟨10.1016/J.ENGFAILANAL.2017.09.010⟩. ⟨hal-02131204⟩
  • O. Latry, A. Divay, D. Fadil, Pascal Dherbécourt. Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena. Journal of Semiconductors, Beijing : Chinese Institute of Electronics ; Bristol : IOP,, 2017, 38 (1), ⟨10.1088/1674-4926/38/1/014007⟩. ⟨hal-01766037⟩
  • Niemat Moultif, Alexis Divay, Eric Joubert, O. Latry. Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures. Engineering Failure Analysis, Elsevier, 2017, 81, pp.69 - 78. ⟨10.1016/j.engfailanal.2017.07.014⟩. ⟨hal-01766076⟩
  • Lu Zhao, Antoine Normand, Jonathan Houard, Ivan Blum, Fabien Delaroche, et al.. Optimizing Atom Probe Analysis with Synchronous Laser Pulsing and Voltage Pulsing. Microscopy and Microanalysis, Cambridge University Press (CUP), 2017, 23 (2), pp.221-226. ⟨10.1017/S1431927616012666⟩. ⟨hal-02107518⟩
  • Lu Zhao, Antoine Normand, Jonathan Houard, Ivan Blum, Fabien Delaroche, et al.. Optimizing Atom Probe Analysis with Synchronous Laser Pulsing and Voltage Pulsing. Microscopy and Microanalysis, Cambridge University Press (CUP), 2017, 23 (2), pp.221-226. ⟨10.1017/S1431927616012666⟩. ⟨hal-02611781⟩
  • N. Moultif, E. Joubert, M. Masmoudi, O. Latry. Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures. Microelectronics Reliability, Elsevier, 2017, 76-77, pp.243 - 248. ⟨10.1016/j.microrel.2017.07.013⟩. ⟨hal-01765955⟩
  • S. Mbarek, Pascal Dherbécourt, O. Latry, F. Fouquet. Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET. Microelectronics Reliability, Elsevier, 2017, 76-77, pp.527 - 531. ⟨10.1016/j.microrel.2017.07.002⟩. ⟨hal-01766126⟩
  • A. Divay, O. Latry, Cédric Duperrier, Farid Temcamani. Ageing of GaN HEMT devices: which degradation indicators?. Journal of Semiconductors, Beijing : Chinese Institute of Electronics ; Bristol : IOP,, 2016, 37 (1), ⟨10.1088/1674-4926/37/1/014001⟩. ⟨hal-01740848⟩
  • Farid Temcamani, Jean Baptiste Fonder, O. Latry, Cédric Duperrier. Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life. IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2016, 64 (3), pp.756-766. ⟨10.1109/TMTT.2016.2519342⟩. ⟨hal-01299413⟩
  • N. Moultif, E. Joubert, O. Latry. Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy. Advanced Electromagnetics, Advanced Electromagnetics, 2016, 5 (3), pp.20. ⟨10.7716/aem.v5i3.380⟩. ⟨hal-02177964⟩
  • A. Divay, Cédric Duperrier, Farid Temcamani, O. Latry. Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. Microelectronics Reliability, Elsevier, 2016, 64, pp.585 - 588. ⟨10.1016/j.microrel.2016.07.123⟩. ⟨hal-01690679⟩
  • S. Mbarek, F. Fouquet, Pascal Dherbécourt, M. Masmoudi, O. Latry. Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests. Microelectronics Reliability, Elsevier, 2016, 64, pp.415-418. ⟨10.1016/j.microrel.2016.07.132⟩. ⟨hal-01954256⟩
  • L. Zhao, A. Delamare, Antoine Normand, F. Delaroche, O. Latry, et al.. RF Pulse Signal Integrity Analysis for Nonlinear Ended Microstrip Line Atom-Probe Tomography. IOP Conference Series: Materials Science and Engineering, IOP Publishing, 2016, 120, pp.012006. ⟨10.1088/1757-899X/120/1/012006⟩. ⟨hal-01954239⟩
  • Joubert Eric, O. Latry, Jean-Philippe Roux. Temperature and Dilatation Estimation for Modern Semiconductor Devices. Sensors & Transducers Journal, International Frequency Sensor Association (IFSA), 2015, 184 (1), pp.130-135. ⟨hal-02178029⟩
  • A Divay, M Masmoudi, O Latry, C Duperrier, Farid Temcamani. An athermal measurement technique for long traps characterization in GaN HEMT transistors.. Microelectronics Reliability, Elsevier, 2015, 55, pp.1703-1707. ⟨10.1016/j.microrel.2015.06.074⟩. ⟨hal-01341768⟩
  • P. Denis, Pascal Dherbécourt, O. Latry, C. Genevois, F. Cuvilly, et al.. Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis. Diamond and Related Materials, Elsevier, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩. ⟨hal-02156382⟩
  • M.A. Belaïd, A.M. Nahhas, M. Gares, K. Daoud, O. Latry. Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests. Microelectronics Journal, Elsevier, 2014, 45 (12), pp.1800-1805. ⟨10.1016/j.mejo.2014.06.002⟩. ⟨hal-02267365⟩
  • M.A. Belaïd, M. Gares, K. Daoud, O. Latry. Performance drifts of N-MOSFETs under pulsed RF life test. Microelectronics Reliability, Elsevier, 2014, 54 (9-10), pp.1851-1855. ⟨10.1016/j.microrel.2014.07.131⟩. ⟨hal-02267372⟩
  • Jean Baptiste Fonder, O. Latry, Cédric Duperrier, Michel Stanislawiak, Hichame Maanane, et al.. Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band Pulsed-RF Operating Life.. Microelectronics Reliability, Elsevier, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩. ⟨hal-00735899⟩
  • Jean Baptiste Fonder, Laurence Chevalier, Cécile Genevois, O. Latry, Cédric Duperrier, et al.. Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.. Microelectronics Reliability, Elsevier, 2012, pp.2205. ⟨10.1016/j.microrel.2012.06.053⟩. ⟨hal-00735905⟩
  • F. Khecib, O. Latry, Pascal Dherbécourt, M. Kétata. Adding channels with PSBT format at 40Gbit/s in an existing 10Gbit/s optical network. Optics Communications, Elsevier, 2011, 284 (21), pp.5125-5129. ⟨10.1016/j.optcom.2011.06.064⟩. ⟨hal-02267382⟩
  • L. Lacheze, O. Latry, Pascal Dherbécourt, K. Mourgues, V. Purohit, et al.. Characterization and modeling of hot carrier injection in LDMOS for L-band radar application. Microelectronics Reliability, Elsevier, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩. ⟨hal-02267392⟩
  • O. Latry, Pascal Dherbécourt, K. Mourgues, H. Maanane, P. Sipma, et al.. A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications. Microelectronics Reliability, Elsevier, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩. ⟨hal-02267399⟩
  • G. Ducournau, O. Latry, E. Joubert, M. Ketata. Comparison of different feedback signals used in one stage PMD compensators for different modulation formats. IEEE Transactions on Communications, Institute of Electrical and Electronics Engineers, 2008, 56, pp.1722-1728. ⟨10.1109/TCOMM.2008.060476⟩. ⟨hal-00356948⟩

Communication dans un congrès19 documents

  • Al Mehdi Bouchour, Pascal Dherbécourt, Andres Echeverri, Ahmed El Oualkadi, O. Latry. Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm. 2018 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2018, Rabat, Morocco. pp.1-6. ⟨hal-02131106⟩
  • O. Latry, Eric Joubert, Tristan Neveu, Niemat Moultif, Mohamed Ndiaye. Temperature estimation of high-electron mobility transistors AlGaN/GaN. 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.265-268, ⟨10.1109/MELCON.2018.8379105⟩. ⟨hal-02131183⟩
  • Niemat Moultif, Eric Joubert, Olivier Latry. SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations. 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.260-264, ⟨10.1109/MELCON.2018.8379104⟩. ⟨hal-02181679⟩
  • Niemat Moultif, Eric Joubert, Mohamed Masmoudi, O. Latry. Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures. 2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩. ⟨hal-01765953⟩
  • Alexis Divay, Cédric Duperrier, Farid Temcamani, O. Latry. Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. ESREF 2016, Sep 2016, Saale, Germany. ⟨hal-01687227⟩
  • Alexis Divay, Mohamed Masmoudi, O. Latry, Cédric Duperrier, Farid Temcamani, et al.. Study of different algorithms and models for trapping effect extraction. 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), May 2016, Krakow, France. ⟨10.1109/MIKON.2016.7491990⟩. ⟨hal-01740879⟩
  • L. Zhao, A. Delamare, Antoine Normand, F. Delaroche, O. Latry, et al.. RF transient pulse signal integrity with ns-duration for atom-probe tomography. 2015 IEEE Radio and Antenna Days of the Indian Ocean (RADIO), Sep 2015, Belle Mare, France. pp.1-2, ⟨10.1109/RADIO.2015.7323403⟩. ⟨hal-02107624⟩
  • Alexis Divay, Mohamed Masmoudi, Olvier Latry, Cédric Duperrier, Farid Temcamani. An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors. ESREF 2015, Oct 2015, Toulouse, France. ⟨hal-01230925⟩
  • Alexis Divay, O. Latry, Cédric Duperrier, Farid Temcamani. Caractérisation de la diode d'un transistor HEMT en GaN sous illumination UV. TELECOM’2015 & 9èmes JFMMA, May 2015, Meknes, Maroc. ⟨hal-01230931⟩
  • Mbarek Safa, Pascal Dherbécourt, François Fouquet, Olivier Latry. Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiques. Télécom & JFMMA, 2015, Meknès, Maroc. ⟨hal-02407378⟩
  • Mbarek Safa, Pascal Dherbécourt, O. Latry, Francois Fouquet, Othman Dhouha, et al.. Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints. CENICS, 2014, Lisbonne, Portugal. ⟨hal-01700474⟩
  • Farid Temcamani, Jean Baptiste Fonder, Cédric Duperrier, O. Latry. Physical analysis of power AlGaN/GaN HEMT reliability. IEICE Workshop on Circuits, Systems and Information Technology (WCSIT), Jul 2014, Iasi, Romania. ⟨hal-01740954⟩
  • Jean-Baptiste Fonder, O. Latry, Farid Temcamani, Cédric Duperrier. Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization. 2014 International Conference on Multimedia Computing and Systems (ICMCS), Apr 2014, Marrakech, France. ⟨10.1109/ICMCS.2014.6911421⟩. ⟨hal-01740889⟩
  • Patrick Denis, Pascal Dherbécourt, O. Latry. Vieillissement thermique de diodes Schottky en carbure de silicium: validation de l'analyse de défaillance par le cas singulier. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065192⟩
  • O. Latry, Jean Baptiste Fonder, L. Chevalier, Genevois G., Cédric Duperrier, et al.. Fiabilité d'amplificateurs de puissance à base de GaN: analyse de la défaillance. Colloque International TELECOM'2013 & 8ème JFMMA, Mar 2013, Marrakech, Maroc. ⟨hal-01740909⟩
  • Jean Baptiste Fonder, Laurence Chevalier, Cécile Genevois, Olivier Latry, Cédric Duperrier, et al.. Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. 23rd EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Oct 2012, Cagliari, Italy. pp.2205. ⟨hal-00735910⟩
  • Jean Baptiste Fonder, Cédric Duperrier, Olivier Latry, Michel Stanislawiak, Philippe Eudeline, et al.. A Reliability-based AlGaN/GaN HEMT model considering high drain bias voltage ageing.. EUROPEAN MICROWAVE WEEK 2012, Oct 2012, Amsterdam, Netherlands. In press. ⟨hal-00735915⟩
  • Jean Baptiste Fonder, Farid Temcamani, Cédric Duperrier, Olivier Latry, Pascal Dherbecourt, et al.. Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN, en bande S.. 17èmes Journées Nationales Microondes, May 2011, Brest, France. pp.4C-2. ⟨hal-00671523⟩
  • Jean Baptiste Fonder, Farid Temcamani, Cédric Duperrier, Olivier Latry, Pascal Dherbecourt, et al.. Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN.. 13èmes Journées Nano Micro et Optoélectronique, Les Issambres (France), Sep 2010, Les Issambres, France. pp.Poster 38. ⟨hal-00735895⟩

Poster1 document

  • Tien Anh Nguyen, Echeverri Andres, Mbarek Safa, Niemat Moultif, Pascal Dherbécourt, et al.. Analyse par électroluminescence des dégradations de transistor MOSFET en SiC. Symposium de Génie Electrique 2016 - SGE2016, Jun 2016, Grenoble, France. ⟨hal-01696225⟩

Chapitre d'ouvrage6 documents

  • Niemat Moultif, Alexis Divay, Eric Joubert, O. Latry. Reliability Study of High-Power Mechatronic Components by Spectral Photoemission Microscopy. Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.241--271, 2017, ⟨10.1016/b978-1-78548-261-8.50008-5⟩. ⟨hal-01927247⟩
  • Niemat Moultif, Mohamed Masmoudi, Eric Joubert, O. Latry. Reliability and Qualification Tests for High-Power MOSFET Transistors. Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩. ⟨hal-01927246⟩
  • Eric Joubert, Olivier Latry, Pascal Dherbécourt, Maxime Fontaine, Christian Gautier, et al.. Internal Temperature Measurement of Electronic Components. Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩. ⟨hal-02173702⟩
  • Christian Gautier, Eric Pieraerts, O. Latry. Physical Defects Analysis of Mechatronic Systems. Embedded Mechatronic Systems 2, Elsevier, pp.49-77, 2015, ⟨10.1016/B978-1-78548-014-0.50003-7⟩. ⟨hal-02130929⟩
  • Farid Temcamani, Jean Baptiste Fonder, Cédric Duperrier, O. Latry. Chap.8 High-Efficiency Architecture for Power Amplifiers. Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.217-240, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50008-6⟩. ⟨hal-01740811⟩
  • Pascal Dherbécourt, O. Latry, K. Dehais-Mourgues, Jean Baptiste Fonder, Cédric Duperrier, et al.. Chap 2. Aging Power Transistors in Operational Conditions. Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.23-48, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50002-5⟩. ⟨hal-01740826⟩