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Noelle Gogneau

15

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1032436

	What Triggers Epitaxial Growth of GaN on Graphene? Camille Barbier , Ludovic Largeau , Noëlle Gogneau , Laurent Travers , Christophe David Crystal Growth & Design, 2023, 23 (9), pp.6517-6525. ⟨10.1021/acs.cgd.3c00481⟩ Article dans une revue hal-04173825v1
	Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors Lorenzo Rigutti , Enrico Di Russo , Florian Chabanais , Ivan Blum , Jonathan Houard Journal of Physical Chemistry C, 2021, 125 (31), pp.17078-17087. ⟨10.1021/acs.jpcc.1c04778⟩ Article dans une revue hal-03448318v1
	Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005) L Mancini , M Morassi , C Sinito , O Brandt , L Geelhaar Nanotechnology, 2020, 31 (45), pp.459501. ⟨10.1088/1361-6528/abaade⟩ Article dans une revue hal-03084748v1
	In Situ X-ray Diffraction Study of GaN Nucleation on Transferred Graphene Camille Barbier , Tao Zhou , Gilles Renaud , Patrick Le Fèvre , Frank Glas Crystal Growth & Design, 2020, 20 (6), pp.4013-4019. ⟨10.1021/acs.cgd.0c00306⟩ Article dans une revue hal-03008961v1
	Selective Area Growth of GaN Nanowires on Graphene Nanodots Martina Morassi , Nan Guan , Vladimir Dubrovskii , Yury Berdnikov , Camille Barbier Crystal Growth & Design, 2019, 20 (2), pp.552-559. ⟨10.1021/acs.cgd.9b00556⟩ Article dans une revue hal-03024971v1
	Selective Area Growth of GaN Nanowires on Graphene Nanodots Martina Morassi , Nan Guan , Vladimir G Dubrovskii , Yuri Berdnikov , Camille Barbier Crystal Growth & Design, 2019, 20 (2), pp.552-559. ⟨10.1021/acs.cgd.9b00556⟩ Article dans une revue hal-03048504v1
	Optical properties of GaN nanowires grown on chemical vapor deposited-graphene L. Mancini , M Morassi , C. Sinito , O Brandt , L. Geelhaar Nanotechnology, 2019, 30 (21), pp.214005. ⟨10.1088/1361-6528/ab0570⟩ Article dans une revue hal-02349609v1
	Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques Valerio Piazza , Andrey Babichev , Lorenzo Mancini , Martina Morassi , Patrick Quach Nanotechnology, 2019, 30 (21), pp.214006. ⟨10.1088/1361-6528/ab055e⟩ Article dans une revue hal-02182873v1
	GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors Quang Chieu Bui , Ludovic Largeau , Martina Morassi , Nikoletta Jegenyes , Olivia Mauguin Applied Sciences, 2019, 9, pp.3528. ⟨10.3390/app9173528⟩ Article dans une revue hal-02385613v1
	Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy Martina Morassi , Ludovic Largeau , Fabrice Oehler , Hyun-Gyu Song , Laurent Travers Crystal Growth & Design, 2018, 18 (4), pp.2545-2554. ⟨10.1021/acs.cgd.8b00150⟩ Article dans une revue hal-02385645v1
	Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography Enrico Di Russo , F. Moyon , N. Gogneau , L. Largeau , E. Giraud Journal of Physical Chemistry C, 2018, 122 (29), pp.16704--16714. ⟨10.1021/acs.jpcc.8b03223⟩ Article dans une revue hal-01928844v1
	Piezo-generator integrating a vertical array of GaN nanowires N C Jamond , Pascal Chrétien , Frédéric Houzé , Lu Lu , L Largeau Nanotechnology, 2016, 27, pp.325403. ⟨10.1088/0957-4484/27/32/325403⟩ Article dans une revue hal-01390969v1
	Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem Lorenzo Rigutti , L. Mancini , Enrico Di Russo , Ivan Blum , F. Moyon Microscopy and Microanalysis, 2016, 22 (S3), pp.650-651. ⟨10.1017/S1431927616004104⟩ Article dans une revue hal-01954232v1

	Piezoelectric properties of axial InGaN/GaN Nanowires Noëlle Gogneau , Pascal Chrétien , Martina Morassi , Tanbir Sodhi , Laurent Travers Journées Nationales des Nanofils semiconducteurs - J2N 2019, Nov 2019, Lyon, France Communication dans un congrès hal-02337971v1

	Effect of the AlN interfacial layer on the piezoelectric properties of GaN nanowires Nicolas Jamond , Pascal Chrétien , L Largeau , Olivia Mauguin , Elisabeth Galopin Réunion plénière des GDR PULSE (Processus ULtimes en épitaxie de SEmiconducteurs) et NNS (NanoFils, Nanotubes, Semiconducteurs), Oct 2014, Toulouse, France Poster de conférence hal-01338879v1