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CNRS research officer : III-Nitride Nanowires for nanoenergy applications

Stéphane Collin   

Journal articles3 documents

  • Omar Saket, Junkang Wang, Nuno Amador-Mendez, Martina Morassi, Arup Kunti, et al.. Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecularbeam epitaxy. Nanotechnology, Institute of Physics, 2020, ⟨10.1088/1361-6528/abc91a⟩. ⟨hal-03019946⟩
  • Valerio Piazza, Andrey Babichev, Lorenzo Mancini, Martina Morassi, Patrick Quach, et al.. Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques. Nanotechnology, Institute of Physics, 2019, 30 (21), pp.214006. ⟨10.1088/1361-6528/ab055e⟩. ⟨hal-02182873⟩
  • Hugo Henck, Zeineb Ben Aziza, Olivia Zill, Debora Pierucci, Carl H. Naylor, et al.. Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 ). Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2017, 96 (11), ⟨10.1103/PhysRevB.96.115312⟩. ⟨hal-01668118⟩