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CNRS research officer : III-Nitride Nanowires for nanoenergy applications


Fabrice Oehler   

Journal articles3 documents

  • L. Mancini, M Morassi, C. Sinito, O Brandt, L. Geelhaar, et al.. Optical properties of GaN nanowires grown on chemical vapor deposited-graphene. Nanotechnology, Institute of Physics, 2019, 30 (21), pp.214005. ⟨10.1088/1361-6528/ab0570⟩. ⟨hal-02349609⟩
  • Martina Morassi, Ludovic Largeau, Fabrice Oehler, Hyun-Gyu Song, Laurent Travers, et al.. Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy. Crystal Growth & Design, American Chemical Society, 2018, 18 (4), pp.2545-2554. ⟨10.1021/acs.cgd.8b00150⟩. ⟨hal-02385645⟩
  • Hugo Henck, Zeineb Ben Aziza, Olivia Zill, Debora Pierucci, Carl H. Naylor, et al.. Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 ). Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2017, 96 (11), ⟨10.1103/PhysRevB.96.115312⟩. ⟨hal-01668118⟩