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Noelle Gogneau
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Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafersPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.205429. ⟨10.1103/PhysRevB.83.205429⟩
Article dans une revue
hal-00644391v1
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Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication windowApplied Physics Letters, 2008, 93, pp.073106. ⟨10.1063/1.2965112⟩
Article dans une revue
hal-00303555v1
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Density of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth ratesApplied Physics Letters, 2007, 91 (10), pp.102107. ⟨10.1063/1.2779101⟩
Article dans une revue
hal-01939911v1
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