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Nikolay Cherkashin
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- nikolay-cherkashin
- 0000-0002-0322-0864
- IdRef : 183426924
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Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in siliconJournal of Applied Physics, 2018, 123 (16), pp.161556 - 161559. ⟨10.1063/1.5012505⟩
Article dans une revue
hal-01736014v1
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