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Nikolay Cherkashin

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nikolay-cherkashin
0000-0002-0322-0864
IdRef : 183426924

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gerard-benassayag

	Amorphization, recrystallization and end of range defects in germanium Alain Claverie , S. Koffel , Nikolay Cherkashin , Gérard Benassayag , P. Scheiblin Thin Solid Films, 2010, 518 (9), pp.2307--2313. ⟨10.1016/j.tsf.2009.09.162⟩ Article dans une revue hal-01736049v1
	End of range defects in Ge S. Koffel , Nikolay Cherkashin , Florent Houdellier , Martin Hÿtch , Gérard Benassayag Journal of Applied Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩ Article dans une revue hal-01736054v1
	Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS Sylvie Schamm-Chardon , Caroline Bonafos , H. Coffin , Nikolay Cherkashin , Marzia Carrada Ultramicroscopy, 2008, 108 (4), pp.346--357. ⟨10.1016/j.ultramic.2007.05.008⟩ Article dans une revue hal-01736064v1
	Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks V. Ioannou-Sougleridis , P. Dimitrakis , V.Em. Vamvakas , P. Normand , Caroline Bonafos Applied Physics Letters, 2007, 90 (26), pp.263513. ⟨10.1063/1.2752769⟩ Article dans une revue hal-01736066v1
	Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation V. Ioannou-Sougleridis , P. Dimitrakis , V.Em. Vamvakas , P. Normand , Caroline Bonafos Microelectronic Engineering, 2007, 84 (9-10), pp.1986--1989. ⟨10.1016/j.mee.2007.04.068⟩ Article dans une revue hal-01736069v1
	Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation Alain Claverie , Caroline Bonafos , Gérard Benassayag , Sylvie Schamm-Chardon , Nikolay Cherkashin Defect Diffus. Forum, 2006, 258-260, pp.531-541 Article dans une revue hal-00204809v1
	Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag Journal of Applied Physics, 2006, 99 (4), pp.044302. ⟨10.1063/1.2171785⟩ Article dans une revue hal-01736074v1
	Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications Caroline Bonafos , H. Coffin , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag Solid-State Electronics, 2005, 49 (11), pp.1734--1744. ⟨10.1016/j.sse.2005.10.001⟩ Article dans une revue hal-01736088v1
	Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Marzia Carrada , Nikolay Cherkashin Materials Science and Engineering: B, 2005, 124-125, pp.499--503. ⟨10.1016/j.mseb.2005.08.129⟩ Article dans une revue hal-01736081v1
	Fabrication of nanocrystal memories by ultra low energy ion implantation Nikolay Cherkashin , Caroline Bonafos , H. Coffin , Marzia Carrada , Sylvie Schamm-Chardon physica status solidi (c), 2005, 2 (6), pp.1907--1911. ⟨10.1002/pssc.200460523⟩ Article dans une revue hal-01736090v1
	Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , K. Beltsios Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.228-238. ⟨10.1016/j.nimb.2003.11.039⟩ Article dans une revue hal-01736094v1
	Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation Caroline Bonafos , Marzia Carrada , Nikolay Cherkashin , H. Coffin , D. Chassaing Journal of Applied Physics, 2004, 95 (10), pp.5696-5702. ⟨10.1063/1.1695594⟩ Article dans une revue hal-01736103v1
	Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology T. Müller , K.-H. Heinig , W. Möller , Caroline Bonafos , H. Coffin Applied Physics Letters, 2004, 85 (12), pp.2373-2375 Article dans une revue hal-01736097v1
	Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , D. Tsoukalas Microelectronic Engineering, 2003, 67-68, pp.629-634. ⟨10.1016/S0167-9317(03)00124-2⟩ Article dans une revue hal-01736114v1
	Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers Marzia Carrada , Nikolay Cherkashin , Caroline Bonafos , Gérard Benassayag , D. Chassaing Materials Science and Engineering: B, 2003, 101 (1-3), pp.204-207. ⟨10.1016/S0921-5107(02)00724-9⟩ Article dans une revue hal-01736116v1
	Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology T. Müller , K.-H. Heinig , Caroline Bonafos , H. Coffin , Nikolay Cherkashin Materials Research Society Symposium - Proceedings, 2003, 792, pp.333-338. ⟨10.1557/PROC-792-R8.7⟩ Article dans une revue hal-01736111v1
	Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis P. Normand , E. Kapetanakis , P. Dimitrakis , D. Tsoukalas , K. Beltsios Applied Physics Letters, 2003, 83 (1), pp.168-170. ⟨10.1063/1.1588378⟩ Article dans une revue hal-01736112v1

	Materials science issues for the fabrication of naocrystal memory devices by ultra low energy ion implantation Alain Claverie , Caroline Bonafos , Gérard Benassayag , Sylvie Schamm-Chardon , Nikolay Cherkashin 2nd International Conference on Diffusion in Solids and Liquids, DSL-2006, 2006, Aveiro, Portugal Communication dans un congrès hal-00115744v1
	Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications Caroline Bonafos , Nikolay Cherkashin , Marzia Carrada , H. Coffin , Gérard Benassayag Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.217-222, ⟨10.1557/PROC-830-D5.2⟩ Communication dans un congrès hal-01736091v1
	Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin , Marc Respaud Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.281-286, ⟨10.1557/PROC-830-D6.6⟩ Communication dans un congrès hal-01736087v1