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Nikolay Cherkashin
6
Documents
Identifiants chercheurs
- nikolay-cherkashin
- 0000-0002-0322-0864
- IdRef : 183426924
Présentation
Publications
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Local strain measurements at dislocations, disclinations and domain boundariesMicroscopy and Microanalysis, 2014, 20 (3), pp.1044-1045. ⟨10.1017/S1431927614006941⟩
Article dans une revue
hal-01721157v1
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Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substratesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. ⟨10.1016/j.nimb.2006.10.051⟩
Article dans une revue
hal-01736071v1
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Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrateMaterials Science and Engineering: B, 2005, 124-125, pp.118--122. ⟨10.1016/j.mseb.2005.08.054⟩
Article dans une revue
hal-01736084v1
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Strain Mapping of Layers and Devices Using Electron HolographyECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩
Communication dans un congrès
hal-01736051v1
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Determination of strain within Si1-yCy layers grown by CVD on a Si substrateSymposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
Communication dans un congrès
hal-01736057v1
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Dark-Field Electron Holography for Strain MappingAlain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩
Chapitre d'ouvrage
hal-01736026v1
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