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Nikolay Cherkashin

22
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caroline-bonafos

Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS

Sylvie Schamm-Chardon , Caroline Bonafos , H. Coffin , Nikolay Cherkashin , Marzia Carrada
Ultramicroscopy, 2008, 108 (4), pp.346--357. ⟨10.1016/j.ultramic.2007.05.008⟩
Article dans une revue hal-01736064v1
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Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

Nikolay Cherkashin , Alain Claverie , Caroline Bonafos , V.V. Chaldyshev , N.A. Bert
Journal of Applied Physics, 2007, 102 (2), pp.023520. ⟨10.1063/1.2749303⟩
Article dans une revue hal-01736067v1

Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

V. Ioannou-Sougleridis , P. Dimitrakis , V.Em. Vamvakas , P. Normand , Caroline Bonafos
Microelectronic Engineering, 2007, 84 (9-10), pp.1986--1989. ⟨10.1016/j.mee.2007.04.068⟩
Article dans une revue hal-01736069v1
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Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

V. Ioannou-Sougleridis , P. Dimitrakis , V.Em. Vamvakas , P. Normand , Caroline Bonafos
Applied Physics Letters, 2007, 90 (26), pp.263513. ⟨10.1063/1.2752769⟩
Article dans une revue hal-01736066v1

Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films

M. Perego , M. Fanciulli , Caroline Bonafos , Nikolay Cherkashin
Materials Science and Engineering: C, 2006, 26 (5-7), pp.835--839. ⟨10.1016/j.msec.2005.09.058⟩
Article dans une revue hal-01736077v1

Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation

Alain Claverie , Caroline Bonafos , Gérard Benassayag , Sylvie Schamm-Chardon , Nikolay Cherkashin
Defect Diffus. Forum, 2006, 258-260, pp.531-541
Article dans une revue hal-00204809v1
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Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag
Journal of Applied Physics, 2006, 99 (4), pp.044302. ⟨10.1063/1.2171785⟩
Article dans une revue hal-01736074v1

Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

Caroline Bonafos , H. Coffin , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag
Solid-State Electronics, 2005, 49 (11), pp.1734--1744. ⟨10.1016/j.sse.2005.10.001⟩
Article dans une revue hal-01736088v1
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Fabrication of nanocrystal memories by ultra low energy ion implantation

Nikolay Cherkashin , Caroline Bonafos , H. Coffin , Marzia Carrada , Sylvie Schamm-Chardon
physica status solidi (c), 2005, 2 (6), pp.1907--1911. ⟨10.1002/pssc.200460523⟩
Article dans une revue hal-01736090v1

Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications

H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Marzia Carrada , Nikolay Cherkashin
Materials Science and Engineering: B, 2005, 124-125, pp.499--503. ⟨10.1016/j.mseb.2005.08.129⟩
Article dans une revue hal-01736081v1

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , K. Beltsios
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.228-238. ⟨10.1016/j.nimb.2003.11.039⟩
Article dans une revue hal-01736094v1
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Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology

T. Müller , K.-H. Heinig , W. Möller , Caroline Bonafos , H. Coffin
Applied Physics Letters, 2004, 85 (12), pp.2373-2375
Article dans une revue hal-01736097v1
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Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation

Caroline Bonafos , Marzia Carrada , Nikolay Cherkashin , H. Coffin , D. Chassaing
Journal of Applied Physics, 2004, 95 (10), pp.5696-5702. ⟨10.1063/1.1695594⟩
Article dans une revue hal-01736103v1
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Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate

A. Wellner , Vincent Paillard , H. Coffin , Nikolay Cherkashin , Caroline Bonafos
Journal of Applied Physics, 2004, 96 (4), pp.2403-2405. ⟨10.1063/1.1765853⟩
Article dans une revue hal-01736095v1

Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , D. Tsoukalas
Microelectronic Engineering, 2003, 67-68, pp.629-634. ⟨10.1016/S0167-9317(03)00124-2⟩
Article dans une revue hal-01736114v1

Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology

T. Müller , K.-H. Heinig , Caroline Bonafos , H. Coffin , Nikolay Cherkashin
Materials Research Society Symposium - Proceedings, 2003, 792, pp.333-338. ⟨10.1557/PROC-792-R8.7⟩
Article dans une revue hal-01736111v1
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Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis

P. Normand , E. Kapetanakis , P. Dimitrakis , D. Tsoukalas , K. Beltsios
Applied Physics Letters, 2003, 83 (1), pp.168-170. ⟨10.1063/1.1588378⟩
Article dans une revue hal-01736112v1

Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers

Marzia Carrada , Nikolay Cherkashin , Caroline Bonafos , Gérard Benassayag , D. Chassaing
Materials Science and Engineering: B, 2003, 101 (1-3), pp.204-207. ⟨10.1016/S0921-5107(02)00724-9⟩
Article dans une revue hal-01736116v1