Nikolay Cherkashin

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Identifiants chercheurs

nikolay-cherkashin
0000-0002-0322-0864
IdRef : 183426924

Présentation

Publications

alain-claverie

	Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5 Minh Anh Luong , Nikolay Cherkashin , Béatrice Pécassou , Chiara Sabbione , Frédéric Mazen Nanomaterials, 2021, 11 (7), pp.1729. ⟨10.3390/nano11071729⟩ Article dans une revue hal-03375510v1
	Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon Nikolay Cherkashin , Nabil Daghbouj , Grégory Seine , Alain Claverie Journal of Applied Physics, 2018, 123 (16), pp.161556 - 161559. ⟨10.1063/1.5012505⟩ Article dans une revue hal-01736014v1
	A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon Nabil Daghbouj , Nikolay Cherkashin , Alain Claverie Microelectronic Engineering, 2018, 190, pp.54-56. ⟨10.1016/j.mee.2018.01.006⟩ Article dans une revue hal-01736187v1
	Determination of the free gibbs energy of plate-like precipitates of hydrogen molecules and silicon vacancies formed after H+ ion implantation into silicon and annealing Nikolay Cherkashin , François-Xavier Darras , Alain Claverie Solid State Phenomena, 2016, 242, pp.190-195. ⟨10.4028/www.scientific.net/SSP.242.190⟩ Article dans une revue hal-01719486v1
	Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon Nabil Daghbouj , Nikolay Cherkashin , François-Xavier Darras , Vincent Paillard , M. Fnaiech Journal of Applied Physics, 2016, 119 (13), pp.135308 - 245301. ⟨10.1063/1.4945032⟩ Article dans une revue hal-01719485v1
	On the origin of dislocation loops in irradiated materials: A point of view from silicon Alain Claverie , Nikolay Cherkashin Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2016, 374, pp.82-89. ⟨10.1016/j.nimb.2015.09.011⟩ Article dans une revue hal-01719487v1
	Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy Nikolay Cherkashin , Nabil Daghbouj , François-Xavier Darras , M. Fnaiech , Alain Claverie Journal of Applied Physics, 2015, 118 (24), pp.245301 - 135308. ⟨10.1063/1.4938108⟩ Article dans une revue hal-01719496v1
	Modelling of point defect complex formation and its application to H+ ion implanted silicon Nikolay Cherkashin , François-Xavier Darras , P. Pochet , S. Reboh , Nicolas Ratel-Ramond Acta Materialia, 2015, 99, pp.187-195. ⟨10.1016/j.actamat.2015.07.078⟩ Article dans une revue hal-01736020v1
	Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers François-Xavier Darras , Nikolay Cherkashin , Fuccio Cristiano , Emmanuel Scheid , Oleg Kononchuk Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩ Article dans une revue hal-01719500v1
	The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys Larbi Laânab , Amine Belafhaili , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie physica status solidi (c), 2014, 11 (1), pp.20-23. ⟨10.1002/pssc.201300177⟩ Article dans une revue hal-01719497v1
	Strain in hydrogen-implanted si investigated using dark-field electron holography Nikolay Cherkashin , Shay Reboh , Axel Lubk , Martin Hÿtch , Alain Claverie Applied Physics Express, 2013, 6 (9), ⟨10.7567/APEX.6.091301⟩ Article dans une revue hal-01736022v1
	Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy Nikolay Cherkashin , Shay Reboh , Martin Hÿtch , Alain Claverie , V.V. Preobrazhenskii Applied Physics Letters, 2013, 102 (17), pp.173115. ⟨10.1063/1.4804380⟩ Article dans une revue hal-01736028v1
	Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation A. Belafhaili , L. Laânab , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie Materials Science in Semiconductor Processing, 2013, 16 (6), pp.1655-1658. ⟨10.1016/j.mssp.2013.04.014⟩ Article dans une revue hal-01736024v1
	Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices Nikolay Cherkashin , Alain Claverie , D. Sotta , J.-M. Bethoux , L. Capello Applied Physics Letters, 2012, 101 (2), pp.023105. ⟨10.1063/1.4733619⟩ Article dans une revue hal-01736033v1
	Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy L. Vincent , F. Fossard , T. Kociniewski , L. Largeau , Nikolay Cherkashin Applied Surface Science, 2012, 258 (23), pp.9208-9212. ⟨10.1016/j.apsusc.2011.07.074⟩ Article dans une revue hal-01736031v1
	Strain mapping in layers and devices by electron holography Martin Hÿtch , Nikolay Cherkashin , Shay Reboh , Florent Houdellier , Alain Claverie physica status solidi (a), 2011, 208 (3), pp.580-583. ⟨10.1002/pssa.201000281⟩ Article dans une revue hal-01736038v1
	Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer F. Okba , Nikolay Cherkashin , Z. Di , M. Nastasi , F. Rossi Applied Physics Letters, 2010, 97 (3), pp.31917-31917. ⟨10.1063/1.3467455⟩ Article dans une revue hal-01736050v1
	Amorphization, recrystallization and end of range defects in germanium Alain Claverie , S. Koffel , Nikolay Cherkashin , Gérard Benassayag , P. Scheiblin Thin Solid Films, 2010, 518 (9), pp.2307--2313. ⟨10.1016/j.tsf.2009.09.162⟩ Article dans une revue hal-01736049v1
	End of range defects in Ge S. Koffel , Nikolay Cherkashin , Florent Houdellier , Martin Hÿtch , Gérard Benassayag Journal of Applied Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩ Article dans une revue hal-01736054v1
	Modeling and experiments on diffusion and activation of phosphorus in germanium P. Tsouroutas , D. Tsoukalas , I. Zergioti , Nikolay Cherkashin , Alain Claverie Journal of Applied Physics, 2009, 105 (9), pp.094910. ⟨10.1063/1.3117485⟩ Article dans une revue hal-01736053v1
	On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates Nikolay Cherkashin , Martin Hÿtch , Florent Houdellier , Florian Hüe , Vincent Paillard Applied Physics Letters, 2009, 94 (14), pp.141910. ⟨10.1063/1.3116648⟩ Article dans une revue hal-00417300v1
	Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS Sylvie Schamm-Chardon , Caroline Bonafos , H. Coffin , Nikolay Cherkashin , Marzia Carrada Ultramicroscopy, 2008, 108 (4), pp.346--357. ⟨10.1016/j.ultramic.2007.05.008⟩ Article dans une revue hal-01736064v1
	Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001) S. Personnic , K.K. Bourdelle , F. Letertre , A. Tauzin , Nikolay Cherkashin Journal of Applied Physics, 2008, 103 (2), pp.23508-1 - 23508-9. ⟨10.1063/1.2829807⟩ Article dans une revue hal-01736058v1
	Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H P. Nguyen , K.K. Bourdelle , C. Aulnette , F. Lallement , N. Daix Journal of Applied Physics, 2008, 104, pp.113526. ⟨10.1063/1.3033555⟩ Article dans une revue hal-01736059v1
	Diffusion and activation of phosphorus in germanium P. Tsouroutas , D. Tsoukalas , I. Zergioti , Nikolay Cherkashin , Alain Claverie Materials Science in Semiconductor Processing, 2008, 11 (5-6), pp.372--377. ⟨10.1016/j.mssp.2008.09.005⟩ Article dans une revue hal-01736063v1
	Comparison of platelet formation in hydrogen and helium-implanted silicon Xavier Hebras , P. Nguyen , K.K. Bourdelle , F. Letertre , Nikolay Cherkashin Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007, 262 (1), pp.24-28. ⟨10.1016/j.nimb.2007.04.158⟩ Article dans une revue hal-01736070v1
	Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism Nikolay Cherkashin , Alain Claverie , Caroline Bonafos , V.V. Chaldyshev , N.A. Bert Journal of Applied Physics, 2007, 102 (2), pp.023520. ⟨10.1063/1.2749303⟩ Article dans une revue hal-01736067v1
	Laser annealing for n+/p junction formation in germanium P. Tsouroutas , D. Tsoukalas , A. Florakis , I. Zergioti , A.A. Serafetinides Materials Science in Semiconductor Processing, 2006, 9 (4-5), pp.644--649. ⟨10.1016/j.mssp.2006.08.013⟩ Article dans une revue hal-01736078v1
	Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Florian Hüe , J.M. Hartmann Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. ⟨10.1016/j.nimb.2006.10.051⟩ Article dans une revue hal-01736071v1
	Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation Alain Claverie , Caroline Bonafos , Gérard Benassayag , Sylvie Schamm-Chardon , Nikolay Cherkashin Defect Diffus. Forum, 2006, 258-260, pp.531-541 Article dans une revue hal-00204809v1
	Defects evolution and dopant activation anomalies in ion implanted silicon Fuccio Cristiano , Y. Lamrani , F. Severac , M. Gavelle , S. Boninelli Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩ Article dans une revue hal-01736079v1
	Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩ Article dans une revue hal-01736073v1
	Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano Applied Physics Letters, 2006, 89 (16), pp.161904. ⟨10.1063/1.2361178⟩ Article dans une revue hal-01736076v1
	Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag Journal of Applied Physics, 2006, 99 (4), pp.044302. ⟨10.1063/1.2171785⟩ Article dans une revue hal-01736074v1
	Fabrication of nanocrystal memories by ultra low energy ion implantation Nikolay Cherkashin , Caroline Bonafos , H. Coffin , Marzia Carrada , Sylvie Schamm-Chardon physica status solidi (c), 2005, 2 (6), pp.1907--1911. ⟨10.1002/pssc.200460523⟩ Article dans une revue hal-01736090v1
	Size and aerial density distributions of Ge nanocrystals in a SiO 2 layer produced by molecular beam epitaxy and rapid thermal processing A. Kanjilal , J.L. Hansen , P. Gaiduk , A.N. Larsen , P. Normand Applied physics. A, Materials science & processing, 2005, 81 (2), pp.363-366. ⟨10.1007/s00339-004-2924-3⟩ Article dans une revue hal-01736082v1
	Structure determination of clusters formed in ultra-low energy high-dose implanted silicon Nikolay Cherkashin , Martin Hÿtch , Fuccio Cristiano , Alain Claverie Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩ Article dans une revue hal-01736085v1
	High germanium content SiGe virtual substrates grown at high temperatures Y. Bogumilowicz , J.M. Hartmann , F. Laugier , G. Rolland , T. Billon Journal of Crystal Growth, 2005, 283 (3-4), pp.346--355. ⟨10.1016/j.jcrysgro.2005.06.036⟩ Article dans une revue hal-01736086v1
	Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications Caroline Bonafos , H. Coffin , Sylvie Schamm-Chardon , Nikolay Cherkashin , Gérard Benassayag Solid-State Electronics, 2005, 49 (11), pp.1734--1744. ⟨10.1016/j.sse.2005.10.001⟩ Article dans une revue hal-01736088v1
	Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Alain Claverie , J.M. Hartmann Materials Science and Engineering: B, 2005, 124-125, pp.118--122. ⟨10.1016/j.mseb.2005.08.054⟩ Article dans une revue hal-01736084v1
	SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy Y. Bogumilowicz , J.M. Hartmann , Nikolay Cherkashin , Alain Claverie , G. Rolland Materials Science and Engineering: B, 2005, 124-125 (SUPPL.), pp.113-117. ⟨10.1016/j.mseb.2005.08.052⟩ Article dans une revue hal-01736080v1
	Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Marzia Carrada , Nikolay Cherkashin Materials Science and Engineering: B, 2005, 124-125, pp.499--503. ⟨10.1016/j.mseb.2005.08.129⟩ Article dans une revue hal-01736081v1
	Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology T. Müller , K.-H. Heinig , W. Möller , Caroline Bonafos , H. Coffin Applied Physics Letters, 2004, 85 (12), pp.2373-2375 Article dans une revue hal-01736097v1
	Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution P. Calvo , Alain Claverie , Nikolay Cherkashin , B. Colombeau , Y. Lamrani Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩ Article dans une revue hal-01736098v1
	High Ge content Si / SiGe heterostructures for microelectronics and optoelectronics purposes Y. Bogumilowicz , J.M. Hartmann , J.F. Damlencourt , B. Vandelle , A. Abbadie Proceedings - Electrochemical Society, 2004, 7, pp.665-679 Article dans une revue hal-01736107v1
	Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , K. Beltsios Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.228-238. ⟨10.1016/j.nimb.2003.11.039⟩ Article dans une revue hal-01736094v1
	On the “Life” of {113} Defects Nikolay Cherkashin , P. Calvo , Fuccio Cristiano , B. de Mauduit , Alain Claverie MRS Proceedings, 2004, 810, pp.103-108. ⟨10.1557/PROC-810-C3.7⟩ Article dans une revue hal-01736093v1
	Ion beam induced defects in crystalline silicon Fuccio Cristiano , Nikolay Cherkashin , Xavier Hebras , P. Calvo , Y. Lamrani Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩ Article dans une revue hal-01736101v1
	Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation Caroline Bonafos , Marzia Carrada , Nikolay Cherkashin , H. Coffin , D. Chassaing Journal of Applied Physics, 2004, 95 (10), pp.5696-5702. ⟨10.1063/1.1695594⟩ Article dans une revue hal-01736103v1
	Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions Fuccio Cristiano , Nikolay Cherkashin , P. Calvo , Y. Lamrani , Xavier Hebras Materials Science and Engineering: B, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩ Article dans une revue hal-01736096v1
	Depth dependence of defect evolution and TED during annealing B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Y. Lamrani Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94 Article dans une revue hal-00140976v1
	Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis P. Normand , E. Kapetanakis , P. Dimitrakis , D. Tsoukalas , K. Beltsios Applied Physics Letters, 2003, 83 (1), pp.168-170. ⟨10.1063/1.1588378⟩ Article dans une revue hal-01736112v1
	Clusters formation in ultralow-energy high-dose boron-implanted silicon Fuccio Cristiano , Xavier Hebras , Nikolay Cherkashin , Alain Claverie , W. Lerch Applied Physics Letters, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩ Article dans une revue hal-01736115v1
	Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A. Kanjilal , J.L. Hansen , P. Gaiduk , A.N. Larsen , Nikolay Cherkashin Applied Physics Letters, 2003, 82 (8), pp.1212-1214. ⟨10.1063/1.1555709⟩ Article dans une revue hal-01736109v1
	Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Nikolay Cherkashin Applied Physics Letters, 2003, 83 (10), pp.1953-1955. ⟨10.1063/1.1608489⟩ Article dans une revue hal-01736110v1
	Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology T. Müller , K.-H. Heinig , Caroline Bonafos , H. Coffin , Nikolay Cherkashin Materials Research Society Symposium - Proceedings, 2003, 792, pp.333-338. ⟨10.1557/PROC-792-R8.7⟩ Article dans une revue hal-01736111v1
	Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis P. Normand , E. Kapetanakis , P. Dimitrakis , D. Skarlatos , D. Tsoukalas Microelectronic Engineering, 2003, 67-68, pp.629-634. ⟨10.1016/S0167-9317(03)00124-2⟩ Article dans une revue hal-01736114v1
	Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers Marzia Carrada , Nikolay Cherkashin , Caroline Bonafos , Gérard Benassayag , D. Chassaing Materials Science and Engineering: B, 2003, 101 (1-3), pp.204-207. ⟨10.1016/S0921-5107(02)00724-9⟩ Article dans une revue hal-01736116v1
	Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs N.A. Bert , Nikolay Cherkashin , V.V. Chaldyshev , Alain Claverie , V.V. Preobrazhenskii IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 2002, pp.233-236. ⟨10.1109/SIM.2002.1242762⟩ Article dans une revue hal-01736118v1

	New developments of the SmartCut process for slicing thin layers Alain Claverie , Nikolay Cherkashin EMN Conference, May 2018, Héraklion, Greece Communication dans un congrès hal-01767500v1
	Materials science behind the Smart Cut process Nikolay Cherkashin , François-Xavier Darras , Nabil Daghbouj , Alain Claverie 22nd Intern. Conf. on Ion Implantation Technology (IIT 2018), Sep 2018, Würzburg, Germany Communication dans un congrès hal-01767778v1
	Sequential He++H+ ion implantation in silicon: factors affecting blistering” Nikolay Cherkashin , Nabil Daghbouj , Alain Claverie 4th International Conference On Nano Structuring by Ion Beam (ICNIB 2017), Oct 2017, Indore, India Communication dans un congrès hal-01763083v1
	. Effect of the Order of He and H Ion Sequential Implantations on Damage Generation and Subsequent Thermal Evolution of Defects in Silicon Alain Claverie , Nikolay Cherkashin SMMIB 2017, 2017, Lisbonne, Portugal Communication dans un congrès hal-01763581v1
	The materials science behind the Smart Cut process Alain Claverie , Nikolay Cherkashin IWPSD 2017, 2017, New Delhi, India Communication dans un congrès hal-01763588v1
	Blistering of silicon surfaces due to very low energy H and He co-implantation Alain Claverie , Nabil Daghbouj , Nikolay Cherkashin EMN Conference, May 2016, Dubrovnic, Croatia Communication dans un congrès hal-01763096v1
	Route toward III-V multispectral solar cells on silicon Timothée Molière , Charles Renard , Alexandre Jaffré , Laetitia Vincent , Daniel Bouchier E-MRS Spring Meeting 2014, European Materials Research Society, May 2014, Lille, France Communication dans un congrès hal-01099576v1
	Defects and Strain imaging of ion implanted materials Alain Claverie , Nikolay Cherkashin Ion Implantation Technology 2014, Jun 2014, Portland, United States Communication dans un congrès hal-01763647v1
	Strain imaging of processed layers and devices by dark field electron holography Alain Claverie , Victor Boureau , Martin Hÿtch , Nikolay Cherkashin Congress of the Electron Microscopy Society of India, Jul 2014, ??, India Communication dans un congrès hal-01763638v1
	Strain Mapping of Layers and Devices Using Electron Holography Alain Claverie , Nikolay Cherkashin , Florian Hüe , Shay Reboh , Florent Houdellier ECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩ Communication dans un congrès hal-01736051v1
	Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate Nikolay Cherkashin , Adrien Gouye , Florian Hüe , Florent Houdellier , Martin Hÿtch ECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩ Communication dans un congrès hal-01736065v1
	Determination of strain within Si1-yCy layers grown by CVD on a Si substrate Nikolay Cherkashin , A. Gouye , Florian Hüe , Florent Houdellier , Martin Hÿtch Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩ Communication dans un congrès hal-01736057v1
	Time dependence study of hydrogen-induced defects in silicon during thermal anneals S. Personnic , A. Tauzin , K.K. Bourdelle , F. Letertre , N. Kernevez 16th International Conference on Ion Implantation Technology (IIT 2006), Jun 2006, Marseille (France), France. pp.65-68, ⟨10.1063/1.2401463⟩ Communication dans un congrès hal-01736075v1
	Materials science issues for the fabrication of naocrystal memory devices by ultra low energy ion implantation Alain Claverie , Caroline Bonafos , Gérard Benassayag , Sylvie Schamm-Chardon , Nikolay Cherkashin 2nd International Conference on Diffusion in Solids and Liquids, DSL-2006, 2006, Aveiro, Portugal Communication dans un congrès hal-00115744v1
	Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers H. Coffin , Caroline Bonafos , Sylvie Schamm-Chardon , Nikolay Cherkashin , Marc Respaud Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.281-286, ⟨10.1557/PROC-830-D6.6⟩ Communication dans un congrès hal-01736087v1
	Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications Caroline Bonafos , Nikolay Cherkashin , Marzia Carrada , H. Coffin , Gérard Benassayag Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.217-222, ⟨10.1557/PROC-830-D5.2⟩ Communication dans un congrès hal-01736091v1
	Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing A.N. Larsen , A. Kanjilal , J.L. Hansen , P. Gaiduk , P. Normand Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.263-267, ⟨10.1557/PROC-830-D6.2⟩ Communication dans un congrès hal-01736092v1
	Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon Alain Claverie , Fuccio Cristiano , B. Colombeau , Xavier Hebras , P. Calvo 2003, pp.73 Communication dans un congrès hal-00146421v1

	Dark-Field Electron Holography for Strain Mapping Martin Hÿtch , Florent Houdellier , Nikolay Cherkashin , Shay Reboh , Elsa Javon Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩ Chapitre d'ouvrage hal-01736026v1
	Characterization of Process-Induced Defects Nikolay Cherkashin , Alain Claverie Alain Claverie ; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.165--198, 2013, ⟨10.1002/9781118579022.ch7⟩ Chapitre d'ouvrage hal-01736027v1

Nikolay Cherkashin

Présentation

Publications

Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5

Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon

Determination of the free gibbs energy of plate-like precipitates of hydrogen molecules and silicon vacancies formed after H+ ion implantation into silicon and annealing

Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

On the origin of dislocation loops in irradiated materials: A point of view from silicon

Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

Modelling of point defect complex formation and its application to H+ ion implanted silicon

Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers

The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys

Strain in hydrogen-implanted si investigated using dark-field electron holography

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation

Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

Strain mapping in layers and devices by electron holography

Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

Amorphization, recrystallization and end of range defects in germanium

End of range defects in Ge

Modeling and experiments on diffusion and activation of phosphorus in germanium

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS

Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H

Diffusion and activation of phosphorus in germanium

Comparison of platelet formation in hydrogen and helium-implanted silicon

Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

Laser annealing for n+/p junction formation in germanium

Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates

Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation

Defects evolution and dopant activation anomalies in ion implanted silicon

Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects

Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Fabrication of nanocrystal memories by ultra low energy ion implantation

Size and aerial density distributions of Ge nanocrystals in a SiO 2 layer produced by molecular beam epitaxy and rapid thermal processing

Structure determination of clusters formed in ultra-low energy high-dose implanted silicon

High germanium content SiGe virtual substrates grown at high temperatures

Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications

Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology

Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution

High Ge content Si / SiGe heterostructures for microelectronics and optoelectronics purposes

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

On the “Life” of {113} Defects

Ion beam induced defects in crystalline silicon

Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation

Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

Depth dependence of defect evolution and TED during annealing

Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis

Clusters formation in ultralow-energy high-dose boron-implanted silicon

Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology

Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers

Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs

New developments of the SmartCut process for slicing thin layers

Materials science behind the Smart Cut process

Sequential He++H+ ion implantation in silicon: factors affecting blistering”

. Effect of the Order of He and H Ion Sequential Implantations on Damage Generation and Subsequent Thermal Evolution of Defects in Silicon

The materials science behind the Smart Cut process

Blistering of silicon surfaces due to very low energy H and He co-implantation

Route toward III-V multispectral solar cells on silicon

Defects and Strain imaging of ion implanted materials

Strain imaging of processed layers and devices by dark field electron holography

Strain Mapping of Layers and Devices Using Electron Holography

Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate

Determination of strain within Si1-yCy layers grown by CVD on a Si substrate

Time dependence study of hydrogen-induced defects in silicon during thermal anneals

Materials science issues for the fabrication of naocrystal memory devices by ultra low energy ion implantation

Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications

Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing

Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon