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Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

 Minghua Shi , J. Saint-Martin , A. Bournel , D. Querlioz , P. Dollfus , et al.
37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩
Communication dans un congrès hal-00799795v1

Sb-HEMT : toward 100-mV cryogenics electronics

 A. Noudewiva , Yannick Roelens , Francois Danneville , A. Olivier , Nicolas Wichmann , et al.
IEEE Transactions on Electron Devices, 2010, 57, pp.1903-1909. ⟨10.1109/TED.2010.2050109⟩
Article dans une revue hal-00548570v1

InAlAs/InGaAs double gate HEMTS with high extrinsic transconductance

 Nicolas Wichmann , I. Duszynski , T. Parenty , S. Bollaert , J. Mateos , et al.
2004, pp.295-298
Communication dans un congrès hal-00133877v1
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Impact ionization and band-to-band tunneling in In x Ga 1-x As PIN ungated devices: A Monte Carlo analysis

 B. Vasallo , T. Gonzalez , V. Talbo , Y. Lechaux , Nicolas Wichmann , et al.
Journal of Applied Physics, 2018, 123 (3), pp.034501. ⟨10.1063/1.5007858⟩
Article dans une revue hal-02115681v1

Réalisation de transistors InAlAs/InGaAs sur substrats reportés

 I. Duszynski , Nicolas Wichmann , S. Bollaert , X. Wallart , Sylvie Lepilliet , et al.
Actes des 9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, St Aygulf, France
Communication dans un congrès hal-00147827v1

Submicrometer InAlAs/InGaAs double-gate HEMT's on transferred substrate

 Nicolas Wichmann , I. Duszynski , T. Parenty , S. Bollaert , J. Mateos , et al.
2004, pp.215-218
Communication dans un congrès hal-00133903v1

Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

 Nicolas Wichmann , B.G. Vasallo , S. Bollaert , Yannick Roelens , X. Wallart , et al.
Applied Physics Letters, 2009, 94, pp.103504-1-3. ⟨10.1063/1.3095482⟩
Article dans une revue hal-00469682v1

A multiline InP-TRL kit for sub-mmWave characterization of InP-HEMT

 R. Younes , Nicolas Wichmann , Sylvie Lepilliet , Guillaume Ducournau , S. Bollaert
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2022, Delft, Netherlands. pp.1-2, ⟨10.1109/IRMMW-THz50927.2022.9895722⟩
Communication dans un congrès hal-03794291v1

Isolation mésa par gravures humide et sèche des HEMTs AlSb/InAs sur substrat InP

 A. Olivier , T. Gehin , L. Desplanque , X. Wallart , J. Cheng , et al.
11èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2008, 2008, Bordeaux, France
Communication dans un congrès hal-00361522v1

Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics

 Yannick Roelens , A. Olivier , L. Desplanque , A. Noudeviwa , Francois Danneville , et al.
68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩
Communication dans un congrès hal-00549924v1

100mV noise performances of Te-doped Sb-HEMT

 A. Noudeviwa , A. Olivier , Yannick Roelens , Francois Danneville , Nicolas Wichmann , et al.
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩
Communication dans un congrès hal-00549922v1

InAlAs/InGaAa HEMTs on polyimide flexible substrate with high cut-off frequencies

 J.S. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
Journées Nationales Technologies Emergentes en Micro-Nanofabrication, JNTE 2013, 2013, Evian, France
Communication dans un congrès hal-00813609v1

Threshold voltage study of scaled self-aligned In0.53Ga0.47As metal oxide semiconductor field effect transistor for different source/drain doping concentrations

 A. Dehzangi , M.F. Mohd Razip Wee , Nicolas Wichmann , S. Bollaert , M.R. Buyong , et al.
Micro and Nano Letters, 2014, 9, pp.180-183. ⟨10.1049/mnl.2014.0007⟩
Article dans une revue hal-00969127v1

Monte Carlo comparison between InAlAs/InGaAS double-gate and standard HEMTs

 B.G. Vasallo , T. Gonzalez , D. Pardo , J. Mateos , Nicolas Wichmann , et al.
Spanish Conference on Electron Devices, 2007, Spain. pp.80-83, ⟨10.1109/SCED.2007.383958⟩
Communication dans un congrès hal-00284024v1

Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs

 B.G. Vasallo , Nicolas Wichmann , S. Bollaert , Yannick Roelens , A. Cappy , et al.
IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702973⟩
Communication dans un congrès hal-00800960v1

HEMT AlInAs/InGaAs pseudomorphique sur substrat d'InP de longueur de grille de 30nm et de Ft = 450GHz

 Nicolas Wichmann , A. Shchepetov , I. Duszynski , Yannick Roelens , X. Wallart , et al.
15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.1D20
Communication dans un congrès hal-00284471v1

Optimisation des performances à faible tension de polarisation de HEMTs de la filière antimoine

 A. Noudeviwa , A. Olivier , Yannick Roelens , Francois Danneville , Nicolas Wichmann , et al.
17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 304, 2C2, 1-4
Communication dans un congrès hal-00597144v1

Self aligned 200nm In0.53Ga0.47As

 A. Olivier , J.J. Mo , Nicolas Wichmann , Yannick Roelens , L. Desplanque , et al.
TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Morocco. CDROM, session A1, papier 164, 1-3
Communication dans un congrès hal-00591363v1

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

 Gilles Dambrine , S. Bollaert , Yannick Roelens , A. Noudeviwa , Francois Danneville , et al.
67th Device Research Conference, 2009, State College, PA, United States. ⟨10.1109/DRC.2009.5354961⟩
Communication dans un congrès hal-00575689v1

Fabrication technology and device performance of ultra-short 30-nm-gate pseudomorphic In0.52Al0.48As/In0.75Ga0.25As HEMTs

 Nicolas Wichmann , A. Shchepetov , I. Duszynski , Yannick Roelens , X. Wallart , et al.
IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702912⟩
Communication dans un congrès hal-00360404v1

Improvement of interfacial properties of Al2O3/GaSb using O2 plasma postoxidation process

 Y. Lechaux , A-B. Fadjie-Djomkam , S. Bollaert , L. Morgenroth , Nicolas Wichmann
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2
Communication dans un congrès hal-02115658v1

fmax = 800 GHz with 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT

 M. Samnouni , Nicolas Wichmann , X. Wallart , Christophe Coinon , Sylvie Lepilliet , et al.
Compound Semiconductor Week 2019, CSW 2019, May 2019, Nara Japan, Japan
Poster de conférence hal-04486045v1

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

 Aurélien Olivier , Nicolas Wichmann , Jiongjong Mo , Albert M.D. Noudeviwa , Yannick Roelens , et al.
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩
Communication dans un congrès hal-00549921v1

Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

 B.G. Vasallo , Nicolas Wichmann , S. Bollaert , Yannick Roelens , A. Cappy , et al.
IEEE Transactions on Electron Devices, 2007, 54, pp.2815-2822. ⟨10.1109/TED.2007.907801⟩
Article dans une revue hal-00255757v1

Réalisation et caractérisation de transistors à effet de champ à hétérojonction de la filière InAlAs/InGaAs sur substrat flexible

 J.S. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-DA-P9, 4 p
Communication dans un congrès hal-00878373v1

Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices

 M.F. Mohd Razip Wee , Arash Dehzangi , Nicolas Wichmann , S. Bollaert , Burhanuddin Yeop Majlis
Micro and Nano Letters, 2013, 8, pp.836-840. ⟨10.1049/mnl.2013.0560⟩
Article dans une revue hal-00909847v1

Trends and challenge in micro and nanoelectronics device research in Europe

 A. Cappy , Nicolas Wichmann , J.S. Galloo , S. Bollaert , Yannick Roelens , et al.
Topical Workshop on Heterostructure Microelectronics, TWHM 2005, 2005, Hyogo, Japan
Communication dans un congrès hal-00125339v1

100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies

 J.S. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.233-236, ⟨10.1109/ICIPRM.2012.6403366⟩
Communication dans un congrès hal-00801043v1

In0.53Ga0.47As MOSFET with gate-first and gate-last process

 J.J. Mo , Nicolas Wichmann , S. Bollaert
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2
Communication dans un congrès hal-00801048v1

50nm multi-gate In0.53Ga0.47As MOSFET with Ft of 150GHz

 J.J. Mo , Nicolas Wichmann , Yannick Roelens , M. Zaknoune , L. Desplanque , et al.
20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2
Communication dans un congrès hal-00799699v1
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