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Nicolas Rouger
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Documents
Affiliations actuelles
- 405657
Identifiants chercheurs
- nicolas-rouger
- 0000-0002-2161-9043
- IdRef : 190456760
Site web
- https://scholar.google.fr/citations?user=K1uNl9AAAAAJ
Présentation
My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters.
As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Since Jan. 2020, I have the privilege to be the head of this research group, composed of 35 persons, and work closely with other group leaders and laboratory board of directors, to continuously improve our activities.
I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.
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Vertical 1kV deep depletion diamond MOSFET: optimization and compact model28th international Hasselt Diamond Workshop (SBDD XXVIII), Feb 2024, Hasselt (Belgium), Belgium
Communication dans un congrès
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First interdigitated diamond FET toward industrial power electronic28th international Hasselt Diamond Workshop SBDD XXVIII, Feb 2024, Hasselt, Belgium
Communication dans un congrès
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Transistors en diamant à effet de champ pour l'électronique de puissance : comparaison de grilles (JFET) et amélioration de la tenue en tension (MOSFET)Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès
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Electro-thermal analysis of paralleled diamond devices for higher total currentHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
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CMOS gate driver for SiC power modulesCongrès annuel de l'Ecole Doctorale Génie Electrique, Electronique, Télécommunications et Santé : du Système au Nanosystème - ED 323 (GEET) - Université de Toulouse, Ecole Doctorale GEET, Jun 2023, Toulouse, France. https://adum.fr/as/ed/GEET/article.pl
Communication dans un congrès
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What brings diamond compared to wide bandgap materials in power semiconductor devices?33rd International Conference on Diamond and Carbon Materials, Elsevier, Sep 2023, Mallorca (Spain), Spain
Communication dans un congrès
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p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver35th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2023), Hong Kong University of Science and Technology, May 2023, Hong Kong, China. ⟨10.1109/ISPSD57135.2023.10147669⟩
Communication dans un congrès
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Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Sep 2023, Aalborg, Denmark. pp.1-8, ⟨10.23919/epe23ecceeurope58414.2023.10264635⟩
Communication dans un congrès
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Diamond electro-optically controlled JFET based memoryHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
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Threshold voltage shift of deep-depletion ZrO2/O-terminated diamond MOSFET: numerical simulations and comparison with measurementsHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
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CMOS Gate Driver with Integrated Ultra-Accurate and Fast Gate Charge Sensor for Robust and Ultra-Fast Short Circuit Detection of SiC power modules2023 IEEE 35th International Symposium on Power Semiconductor Devices and ICs (IEEE ISPSD), Hong Kong University of Science and Technology (HKUST), May 2023, Hong Kong, France. pp.68-71, ⟨10.1109/ispsd57135.2023.10147567⟩
Communication dans un congrès
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Deep-depletion diamond metal–oxide–semiconductor field-effect transistor with source-field plate for power convertersHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
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Développement de fonctionnalités rapides, précises et intégrées CMOS, pour la commutation optimale et la protection interne des onduleurs à module SiC MOSFETSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès
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Non-volatile photo-switch using a diamond pn junction diamond15th International Conference on New Diamond and Nano Carbons NDNC 2022, Jun 2022, Kanazawa, Japan
Communication dans un congrès
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Optimal Design of Diamond Field Effect Transistors Towards a Key Milestone for Diamond Power ElectronicsMRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu & Virtual, United States
Communication dans un congrès
hal-03692793v1
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Comparison of diamond based non-volatile photo-switch using phosphorus and nitrogen deep donors as gate dopants32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès
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Electro-thermal simulations of a diamond MOSFET26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès
hal-03647967v1
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Commutation time of non-volatile photo-switch based on diamond Junction Field Effect Transistor26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès
hal-03738021v1
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Non-volatile tuning of normally-on and off states of the deep depletion ZrO2/diamond MOSFETs32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès
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Design of a Source Field-Plated Deep-Depletion Diamond MOSFETsMRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu, United States
Communication dans un congrès
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Deep-Depletion diamond metal-oxide-semiconductor field-effect transistor with source-field plate for power converters32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès
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Diamond Power Devices: Benchmarks, Optimal Design and Integration in Power ConvertersIEEE International Workshop on Integrated Power Packaging IWIPP 2022, Aug 2022, Grenoble, France
Communication dans un congrès
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How a diamond pn junction can be used to fabricate a non-volatile photo-switch?26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès
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Commutation time of non-volatile photo-switch based on diamond Junction Field Effect Transistor15th International Conference on New Diamond and Nano Carbons NDNC 2022, Jun 2022, Kanazawa, Japan
Communication dans un congrès
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Protection rapide et robuste contre les courts-circuits internes de convertisseurs à base de MOSFETs SiCSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2021), 6 - 8 JUILLET 2021, NANTES, FRANCE, Jul 2021, Nantes, France
Communication dans un congrès
hal-03287704v1
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Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
Communication dans un congrès
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Diamond Inter-Digited JFET for Power Electronic Devices31st International Conference on Diamond and Carbon Materials, Sep 2021, Virtual Meeting (tentative: Palma), Spain
Communication dans un congrès
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Hybrid power module with Diamond and SiC power devices: modeling, performances and challengesMRS Spring Meeting 2021, Apr 2021, Seattle, United States
Communication dans un congrès
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Towards the implementation of diamond power devices in power converters and measurements of their switching lossesMRS Spring Meeting 2021, Apr 2021, Seattle, United States
Communication dans un congrès
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Contrôle ultra-rapide et intégré de dv/dt en boucle fermée lors de l’amorçage de transistors à semiconducteurs grand-gapSymposium de Génie Electrique 2021, Jul 2021, Nantes, France
Communication dans un congrès
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‘ig,vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (Virtual ), France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215619⟩
Communication dans un congrès
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Modular Multilevel SOI-CMOS Active Gate Driver Architecture for SiC MOSFETs2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual ), Austria. pp.278-281, ⟨10.1109/ISPSD46842.2020.9170181⟩
Communication dans un congrès
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Modeling and Design of High Bandwidth Feedback Loop for dv/dt Control in CMOS AGD for GaN2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna ( virtual ), Austria. pp.106-109, ⟨10.1109/ISPSD46842.2020.9170106⟩
Communication dans un congrès
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Optical control of power devices: combining photonics, CMOS integration and monolithic integration for the next generation of power converters2020 International Topical Meeting on Microwave Photonics (MWP), Nov 2020, Matsue, Japan. ⟨10.23919/MWP48676.2020⟩
Communication dans un congrès
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CMOS Gate Driver with fast short circuit protection for SiC MOSFETs2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual), Austria. pp.94-97, ⟨10.1109/ISPSD46842.2020.9170164⟩
Communication dans un congrès
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Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. ⟨10.1109/ispsd.2019.8757693⟩
Communication dans un congrès
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Comparison between ig Integration and vgs Derivation methods dedicated to fast Short-Circuit 2D-Diagnosis for Wide Band Gap Power DevicesELECTRIMACS 2019, May 2019, Salerno, Italy
Communication dans un congrès
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175V, > 5.4 MV/cm, 50 m(omega).cm2 at 250°C Diamond MOSFET and its reverse conduction2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩
Communication dans un congrès
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Double chips low side - high side configurable full gate driver circuits for a high speed inverter legCIPS 2018 10th International Conference on Integrated Power Electronics Systems, 2018, Mar 2018, Stuttgart, Germany
Communication dans un congrès
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Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissanceSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
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Diamond Schottky barrier diodes for power electronics applicationsECCE 2018, Sep 2018, Portland, United States
Communication dans un congrès
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A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jul 2018, Prague, France. pp.105-108, ⟨10.1109/PRIME.2018.8430331⟩
Communication dans un congrès
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Solderless Leadframe Assisted Wafer-Level Packaging Technology for Power Electronics2018 IEEE 68th Electronic Components and Technology Conference (ECTC), May 2018, San Diego, France. pp.1251-1257, ⟨10.1109/ECTC.2018.00193⟩
Communication dans un congrès
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Diodes Schottky en Diamant : augmentation du calibre en courant et parallélisationSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
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Diamond Devices for Power Electronics11th Conference on New Diamond and Nano Carbons, May 2017, Cairns, Australia
Communication dans un congrès
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Parallel and interleaved structures for diamond Schottky diodesEPE 2017 (ECCE Europe), Sep 2017, Varsovie, Poland
Communication dans un congrès
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Operating temperature consideration in the trade-off for designing drift region of diamond power devicesHasselt Diamond Workshop 2017 - SBDD XXII, Mar 2017, Hasselt, Belgium
Communication dans un congrès
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Diamond Schottky diodes interactions in power electronics applicationMRS 2017 Fall Meeting, Nov 2017, Boston, United States
Communication dans un congrès
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Operating temperature as a trade-off parameter for designing drift region of diamond power devices28th International Conference on Diamond and Carbon Materials, Sep 2017, Göteborg, Sweden
Communication dans un congrès
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200V, 4MV/cm lateral diamond MOSFET2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩
Communication dans un congrès
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High Speed Optical Gate Driver for Wide Band Gap Power TransistorsEnergy Conversion Congress & Exposition (ECCE 2016), Sep 2016, Milwaukee, United States
Communication dans un congrès
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Contributions aux circuits de « gate-driver » dédiés aux transistors de puissance à forte vitesse de commutation dans un environnement haute temperatureSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
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Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameterICDCM2016 - International Conference on Diamond and Carbon Materials, Sep 2016, Montpellier, France
Communication dans un congrès
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Simulation numérique et caractérisation de composants de puissance en diamantSymposium de Genie Electrique, Jun 2016, Grenoble, France
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Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States
Communication dans un congrès
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Diamond power electronics : from device simulation to implementation in power converters2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States
Communication dans un congrès
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Towards vertical power device 3D packaging on 8-inch wafer Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic
Communication dans un congrès
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La diode Schottky en diamant : le présent et le futurSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
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CMOS gate drivers with integrated optical interfaces for extremely fast power transistors ESARS-ITEC 2016, Nov 2016, Toulouse, France
Communication dans un congrès
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Mise en place d'un packaging 3D collectif de composants de puissance à structure verticaleSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
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Optimal design of unipolar diamond power devices: drift region and channel doseHasselt Diamond Workshop 2016 - SBDD XXI, Mar 2016, Hasselt, Belgium
Communication dans un congrès
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Trade-off for optimizing drift region of diamond power devicesICDCM (International Conference on Diamond and Carbon Materials) 2016, Sep 2016, Montpellier, France
Communication dans un congrès
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Contributions aux circuits de commande gate driver dédiés à la haute température et aux très fortes vitesses de commutationSymposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès
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Contributions to dedicated gate driver circuitry for very high switching speed high temperature power devicesPower Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic
Communication dans un congrès
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Trade-off for optimizing drift region of diamond power devicesE-MRS 2016, Sep 2016, Varsovie, Poland
Communication dans un congrès
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CMOS SOI gate driver with integrated optical supply and optical driving for fast power transistors Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic
Communication dans un congrès
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Optical Gate Control of Power TransistorsIEICE-NPERC-J Joint Symposium on Smart Applications of Photonics to New Generation Power Electronics, Dec 2016, Tokyo, Japan
Communication dans un congrès
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Optimization and design of diamond High Voltage power devicesE-MRS Spring meeting 2016 , May 2016, Lille, France
Communication dans un congrès
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CMOS Gate Drivers for High Speed - High Voltage Wide Bandgap Power SwitchesCMOS Emerging Technologies Research 2015, May 2015, Vancouver, Canada
Communication dans un congrès
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Enabling high switching speed for diamond power transistors3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France
Communication dans un congrès
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CMOS Gate Driver with Integrated Optical receiver for Power Electronics applicationsECCE Europe 2015, Sep 2015, Genève, Switzerland
Communication dans un congrès
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Méthodes spécifiques de caractérisation et de commande de composants grand gap en environnement variableSymposium de Génie Électrique 2014, Jul 2014, Cachan, France
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Modeling and characterization of 0.35 μm CMOS coreless transformer for gate driversISPSD 2014, Apr 2014, Hawai, United States
Communication dans un congrès
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CMOS Integrated Optical Isolator for Power Transistor Gate DriverIECON 2014, Oct 2014, Dallas, United States
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Transfert isolé des signaux de commande dans le contexte de l'intégration pour les composants actifs d'électronique de puissanceSymposium de Génie Électrique 2014, Jul 2014, Cachan, France
Communication dans un congrès
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3D Packaging for vertical power devicesCIPS 2014, Feb 2014, Nuremberg, Germany
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Challenges and benefits of microelectronics for power electronics: from integrated optical driving to optimized power semiconductor switchesPh. D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on, 2014, Grenoble, France. pp.1--1
Communication dans un congrès
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Comparison of atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated boron doped diamondSBDD 2014, Feb 2014, Hasselt, Belgium
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Integrated gate driver circuits with an ultra-compact design and high level of galvanic isolation for power transistorsInternational Conference on Integrated Power Electronics Systems (CIPS 2014), Feb 2014, Nuremberg, Germany. ISBN 978-3-8007-3578-5, pp 348-353
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Challenges of diamond devices for power electronicsThe 2nd Japan - France CVD diamond power device workshop, 2014, Kyushu, Japan
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Leakage current conduction mechanisms in atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated diamondInternational Conference on Diamond and Carbon Materials, 2014, Seville, Spain
Communication dans un congrès
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Advanced Wafer Level Packaging Technology by Layer Transfer Engineering : Application to 3D Packaging for vertical power devicesFrom nano to macro power electronics and packaging international workshop, Oct 2014, Tours, France
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A Specific Switching Characterization Method for Evaluation of Operating Point and Temperature Impacts on Wide Bandgap DevicesIEEE WipDa 2013, Oct 2013, Columbus, United States. ⟨10.1109/WiPDA.2013.6695573⟩
Communication dans un congrès
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True 3D Packaging Solution for Stacked Vertical Power DevicesThe 25th International Symposium on Power Semiconductor Devices and ICs. (ISPSD 2013), May 2013, Kanazawa, Japan. pp.97-100
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An Adaptive Output Impedance Gate Drive for Safer and More Efficient Control of Wide Bandgap DevicesIEEE WipDa 2013, 2013, Columbus, United States. ⟨10.1109/WiPDA.2013.6695564⟩
Communication dans un congrès
hal-00988293v1
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Diamond bipolar device simulationIEEE Workshop on Wide Bandgap Power Devices and Applications, Oct 2013, Columbus, United States
Communication dans un congrès
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Models and parameters study for diamond electronic devices simulations74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan
Communication dans un congrès
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Performance Measurements of an Optical Detector Designed for Monolithic Integration with a Power VDMOSI2MTC 2013, May 2013, Minnéapolis, United States
Communication dans un congrès
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Evaluation des Performances d'une Chaîne de Traction pour Véhicule Electrique pour Différentes Structures d'Electronique de PuissanceElectronique de Puissance du Futur 2012, Jul 2012, France
Communication dans un congrès
hal-00716734v1
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Etude expérimentale d'un étage intégré d'isolation par voie optique pour transistors de puissanceElectronique de Puissance du Futur 2012, Jul 2012, France
Communication dans un congrès
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Packaging à l'échelle du wafer pour les convertisseurs multicellulairesElectronique de Puissance du Futur 2012, Jul 2012, France
Communication dans un congrès
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Convertisseur intégré pour les applications réseaux de micro convertisseursElectronique de Puissance du Futur 2012, Jul 2012, France
Communication dans un congrès
hal-00716729v1
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An Integration of Dual Active Bridge DC/DC Converters Used in Micro Converters NetworksPower Electronics/Intelligent Motion/Power Quality PCIM Europe Conference 2012, May 2012, Nuremberg, Germany
Communication dans un congrès
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Implementation of monolithic multiple vertical power diodes in a multiphase converterApplied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE, Feb 2012, Orlando, United States. pp.169-175
Communication dans un congrès
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Integration of Dual Active Bridge DC/DC Converters for Converters Networks applicationsPCIM 2012, May 2012, Nuremberg, Germany
Communication dans un congrès
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Vers une filière et un support de conception EDA (Electronic Design Automation) des fonctions de coupure spécifiquesElectronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France. 4p
Communication dans un congrès
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A vertical power device conductive assembly at wafer level using direct bonding technologyIn Power Semiconductor Devices and ICs (ISPSD), Jun 2012, France. pp.77-80
Communication dans un congrès
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Integrated Low Power Low Voltage Isolated Switch Mode Power SupplyIn Industrial Electronics CONference, IEEE IECON 2012, Oct 2012, France. pp.500-505
Communication dans un congrès
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CASCADED INVERTERS FOR ELECTRICAL VEHICLES: TOWARDS A BETTER MANAGEMENT OF TRACTION CHAIN FROM THE BATTERY TO THE MOTOR?ISIE 2011, Jun 2011, Gdansk, Poland
Communication dans un congrès
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Integrated Low Power and High Bandwidth Optical Isolator for Monolithic Power MOSFETs DriverProceedings of 23rd International Symposium on Power Semiconductor Devices & IC's, May 2011, San Diego, United States. pp.356-359
Communication dans un congrès
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Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chipDesign and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip, May 2011, San Diego, United States. pp.360-363
Communication dans un congrès
hal-00599260v1
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"Design and characterization of an integrated coreless transformer onto a CMOS gate driver for gate signal insulation purposes"IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2011, San Diego, United States
Communication dans un congrès
hal-01068882v1
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A novel Power System in Package with 3D chip on chip interconnections of the power transistor and its gate driverProceedings of 23rd International Symposium on Power Semiconductor Devices & IC's, May 2011, San Diego, United States. pp.328-331
Communication dans un congrès
hal-00599317v1
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Towards reduced threshold voltages for vertical power Mosfet transistorsISIE 2011, Jun 2011, Gdansk, Poland
Communication dans un congrès
hal-00607324v1
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Benefits of Cascaded Inverters for Electrical Vehicles'Drive-TrainsECCE, Sep 2011, Phoenix, United States
Communication dans un congrès
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3D hybrid integration and functional interconnection of a power transistor and its gate driverECCE (Energy Conversion Conference and Exposition) IEEE, Sep 2010, Atlanta, United States
Communication dans un congrès
hal-00520083v1
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Current Trends in Silicon Photonics in the Context of Higher EducationCMOS Emerging Technologies Workshop 2010, 2010, Canada
Communication dans un congrès
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optimization of a power MOSFET And Its Monolithically integrated self-powering CircuitsXI-th International Workshop on Optimization and Inverse Problems in Electromagnetism, Sep 2010, Sofia, Bulgaria. pp.ISBN 978-954-438-855-3
Communication dans un congrès
hal-00520051v1
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Design and characterization of an integrated CMOS gate driver for vertical power MOSFETsECCE (Energy Conversion Conference and Exposition) IEEE, Sep 2010, Atlanta, United States
Communication dans un congrès
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Conception, intégration 3D et caractérisation d'un circuit de commande CMOS pour transistors de puissanceÉlectronique de Puissance du Futur, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00498844v1
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Design of a 1550nm SiGe/Si quantum-well optical modulatorProceedings of SPIE Photonics North, 2010, United States
Communication dans un congrès
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Flexible Parameter Identification Tool for semiconductor Device DesignXI-th International Workshop on Optimization and Inverse Problems in Electromagnetism, Sep 2010, Sofia, Bulgaria. pp.ISBN 978-954-438-855-3
Communication dans un congrès
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Silicon Nanophotonics Fabrication: an Innovative Graduate CourseThe 17th International Conference on Telecommunications, Apr 2010, Doha, Qatar
Communication dans un congrès
hal-00476550v1
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Tension de seuil réduite pour composants de puissance à grille: Intérêts et conséquences.Électronique de Puissance du Futur, Jun 2010, Saint-Nazaire, France. 4p
Communication dans un congrès
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Intégration Monolithique d'un Récepteur Optique au sein de Transistors de Puissance : Enjeux et PossibilitésEPF 2008 XIIème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France. pp.141-146
Communication dans un congrès
hal-00296716v1
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Toward Integrated Gate Driver Supplies : Practical and Analytical Analysis of High-Voltage CapabilitiesPower Electronics Specialists Conference PESC 08, Jun 2008, Rhodes, Greece. IEEE pesc conference, pp 873-879
Communication dans un congrès
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Integrated Photoreceiver For An Isolated Control Signal Transfert In Favour Of Power TransistorsIEEE 20th International Symposium on Power Semiconductor Devices and ICs (ISPSD'08), May 2008, Orlando, United States. pp. 213-216
Communication dans un congrès
hal-00282182v1
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High Efficiency and Fully Integrated Self Powering Technique For VIPer Based Flyback ConvertersIAS-IEEE Conference, Oct 2006, Tampa, Floride, United States
Communication dans un congrès
hal-00198345v1
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Simulation, Design and Testing of Integrated Power Supply For Insulated Gate TransistorsIEEE ISPSD'06, Jun 2006, Naples, Italy
Communication dans un congrès
hal-00193829v1
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Toward generic fully integrated gate driver power suppliesIEEE IECON 2006, Nov 2006, Paris, France
Communication dans un congrès
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Nouvelles fonctions de commutation de puissance intégrées sur SiliciumJournées GdR, Oct 2005, Lyon, France
Communication dans un congrès
hal-00188228v1
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Optical Gate Control of Power Transistors IEICE-NPERC-J Joint Symposium on Smart Applications of Photonics to New Generation Power Electronics , Dec 2016, Tokyo, Japan
Poster de conférence
hal-01413341v1
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Diamond devices in power converters: needs, constraints, and impactWoodhead Publishing. Power Electronics Device Applications of Diamond Semiconductors, chap 6.2, pp.400-431, 2018, 978-0-08-102183-5
Chapitre d'ouvrage
hal-04072435v1
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Commande des composants à semi-conducteurs de puissance : contexteTechniques de l'Ingénieur , d3230v2, 2017
Chapitre d'ouvrage
hal-01756766v1
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Industrial and power electronicsintroducing to circuits andsystems, Unesco, 2012
Chapitre d'ouvrage
hal-00821040v1
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Diamond MIS TransistorUnited States, Patent n° : US11569381 (B2). 2023
Brevet
hal-04019131v1
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Dispositif électronique de puissance a structure d’interconnexion électrique planeFrance, N° de brevet: 16/54036. 2016
Brevet
hal-01518798v1
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Dispositif électronique de puissance à cellule de commutation 3D verticaleFrance, N° de brevet: 14/60636. 2014
Brevet
hal-01518820v1
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Promotion d'une approche système dans l'intégration monolithique pour semi-conducteurs de puissance2006
Autre publication scientifique
hal-00202667v1
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Intégration monolithique des fonctions d'interface au sein de composants de puissance à structure verticaleEnergie électrique. Institut National Polytechnique de Grenoble - INPG, 2008. Français. ⟨NNT : ⟩
Thèse
tel-00344847v1
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HABILITATION A DIRIGER DES RECHERCHES Spécialité : Electronique, Electrotechnique, Automatique et Traitement du signal (EEATS)Energie électrique. Institut Polytechnique de Grenoble, 2015
HDR
tel-01187283v1
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