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Nicolas Rouger

10
Documents
Affiliations actuelles
  • 405657
Identifiants chercheurs
Site web
  • https://scholar.google.fr/citations?user=K1uNl9AAAAAJ

Présentation

My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters. As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Since Jan. 2020, I have the privilege to be the head of this research group, composed of 35 persons, and work closely with other group leaders and laboratory board of directors, to continuously improve our activities. I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.

Publications

713848

Deep-depletion diamond metal–oxide–semiconductor field-effect transistor with source-field plate for power converters

Damien Michez , Marine Couret , Juliette Letellier , Khaled Driche , Julien Pernot
Hasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès hal-04099969v1

Electro-thermal analysis of paralleled diamond devices for higher total current

Marine Couret , Anne Castelan , David Eon , Emmanuel Sarraute , Nicolas C. Rouger
Hasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès hal-04099964v1
Image document

Transistors en diamant à effet de champ pour l'électronique de puissance : comparaison de grilles (JFET) et amélioration de la tenue en tension (MOSFET)

Martin Kah , Damien Michez , Nicolas C. Rouger , Juliette Letellier , Khaled Driche
Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès hal-04169088v1
Image document

What brings diamond compared to wide bandgap materials in power semiconductor devices?

Nicolas C. Rouger
33rd International Conference on Diamond and Carbon Materials, Elsevier, Sep 2023, Mallorca (Spain), Spain
Communication dans un congrès hal-04221279v1

Electro-thermal simulations of a diamond MOSFET

Marine Couret , Anne Castelan , Juliette Letellier , Khaled Driche , Julien Pernot
26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès hal-03647967v1

Optimal Design of Diamond Field Effect Transistors Towards a Key Milestone for Diamond Power Electronics

Nicolas C. Rouger
MRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu & Virtual, United States
Communication dans un congrès hal-03692793v1

Design of a Source Field-Plated Deep-Depletion Diamond MOSFETs

Marine Couret , Nicolas C. Rouger , Khaled Driche , Juliette Letellier , Anne Castelan
MRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu, United States
Communication dans un congrès hal-03692802v1