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Nicolas Rouger
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Documents
Affiliations actuelles
- 405657
Identifiants chercheurs
- nicolas-rouger
- 0000-0002-2161-9043
- IdRef : 190456760
Site web
- https://scholar.google.fr/citations?user=K1uNl9AAAAAJ
Présentation
My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters.
As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Since Jan. 2020, I have the privilege to be the head of this research group, composed of 35 persons, and work closely with other group leaders and laboratory board of directors, to continuously improve our activities.
I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.
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Field-Plated D3MOSFET design for breakdown voltage improvementDiamond and Related Materials, 2023, 135, pp.109827. ⟨10.1016/j.diamond.2023.109827⟩
Article dans une revue
hal-03881905v1
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Analytic modeling of an hybrid power module based on diamond and SiC devicesDiamond and Related Materials, 2022, 124, pp.108936. ⟨10.1016/j.diamond.2022.108936⟩
Article dans une revue
hal-03346306v1
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Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistorsJournal of Physics D: Applied Physics, 2021, 54 (23), pp.233002. ⟨10.1088/1361-6463/abe8fe⟩
Article dans une revue
hal-03287047v1
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Deep-depletion diamond metal–oxide–semiconductor field-effect transistor with source-field plate for power convertersHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
hal-04099969v1
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Electro-thermal analysis of paralleled diamond devices for higher total currentHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
hal-04099964v1
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Transistors en diamant à effet de champ pour l'électronique de puissance : comparaison de grilles (JFET) et amélioration de la tenue en tension (MOSFET)Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès
hal-04169088v1
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What brings diamond compared to wide bandgap materials in power semiconductor devices?33rd International Conference on Diamond and Carbon Materials, Elsevier, Sep 2023, Mallorca (Spain), Spain
Communication dans un congrès
hal-04221279v1
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Electro-thermal simulations of a diamond MOSFET26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès
hal-03647967v1
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Optimal Design of Diamond Field Effect Transistors Towards a Key Milestone for Diamond Power ElectronicsMRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu & Virtual, United States
Communication dans un congrès
hal-03692793v1
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Design of a Source Field-Plated Deep-Depletion Diamond MOSFETsMRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu, United States
Communication dans un congrès
hal-03692802v1
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