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Nicolas Rouger

8
Documents
Affiliations actuelles
  • 405657
Identifiants chercheurs
Site web
  • https://scholar.google.fr/citations?user=K1uNl9AAAAAJ

Présentation

My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters. As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Since Jan. 2020, I have the privilege to be the head of this research group, composed of 35 persons, and work closely with other group leaders and laboratory board of directors, to continuously improve our activities. I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.

Publications

951612
Image document

Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissance

Cédric Masante , Khaled Driche , Thanh-Toan Pham , Hitoshi Umezawa , Gaetan Perez
Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès hal-02981917v1
Image document

Diodes Schottky en Diamant : augmentation du calibre en courant et parallélisation

Gaetan Perez , Juliette Letellier , Aurélien Maréchal , David Eon , Gauthier Chicot
Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès hal-02981846v1

Operating temperature consideration in the trade-off for designing drift region of diamond power devices

Gauthier Chicot , David Eon , Nicolas Clément, Jean-Paul Rouger
Hasselt Diamond Workshop 2017 - SBDD XXII, Mar 2017, Hasselt, Belgium
Communication dans un congrès hal-01590460v1

Operating temperature as a trade-off parameter for designing drift region of diamond power devices

Gauthier Chicot , David Eon , Nicolas Clément, Jean-Paul Rouger
28th International Conference on Diamond and Carbon Materials, Sep 2017, Göteborg, Sweden
Communication dans un congrès hal-01590470v1

Trade-off for optimizing drift region of diamond power devices

Gauthier Chicot , David Eon , Nicolas Clément, Jean-Paul Rouger
E-MRS 2016, Sep 2016, Varsovie, Poland
Communication dans un congrès hal-01370942v1

Optimization and design of diamond High Voltage power devices

Gauthier Chicot , David Eon , Nicolas Clément, Jean-Paul Rouger
E-MRS Spring meeting 2016 , May 2016, Lille, France
Communication dans un congrès hal-01313983v1