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Nicolas Rouger

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Documents
Affiliations actuelles
  • 405657
Identifiants chercheurs
Site web
  • https://scholar.google.fr/citations?user=K1uNl9AAAAAJ

Présentation

My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters. As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Since Jan. 2020, I have the privilege to be the head of this research group, composed of 35 persons, and work closely with other group leaders and laboratory board of directors, to continuously improve our activities. I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.

Publications

1080398
Image document

Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissance

Cédric Masante , Khaled Driche , Thanh-Toan Pham , Hitoshi Umezawa , Gaetan Perez
Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès hal-02981917v1