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Nicolas Rouger
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Documents
Affiliations actuelles
- 405657
Identifiants chercheurs
- nicolas-rouger
- 0000-0002-2161-9043
- IdRef : 190456760
Site web
- https://scholar.google.fr/citations?user=K1uNl9AAAAAJ
Présentation
My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters.
As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Since Jan. 2020, I have the privilege to be the head of this research group, composed of 35 persons, and work closely with other group leaders and laboratory board of directors, to continuously improve our activities.
I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.
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Vertical 1kV deep depletion diamond MOSFET: optimization and compact model28th international Hasselt Diamond Workshop (SBDD XXVIII), Feb 2024, Hasselt (Belgium), Belgium
Communication dans un congrès
hal-04506071v1
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First interdigitated diamond FET toward industrial power electronic28th international Hasselt Diamond Workshop SBDD XXVIII, Feb 2024, Hasselt, Belgium
Communication dans un congrès
hal-04506082v1
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Transistors en diamant à effet de champ pour l'électronique de puissance : comparaison de grilles (JFET) et amélioration de la tenue en tension (MOSFET)Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès
hal-04169088v1
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Deep-depletion diamond metal–oxide–semiconductor field-effect transistor with source-field plate for power convertersHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
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Diamond electro-optically controlled JFET based memoryHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
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Threshold voltage shift of deep-depletion ZrO2/O-terminated diamond MOSFET: numerical simulations and comparison with measurementsHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hasselt, Belgium
Communication dans un congrès
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Comparison of diamond based non-volatile photo-switch using phosphorus and nitrogen deep donors as gate dopants32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès
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Non-volatile photo-switch using a diamond pn junction diamond15th International Conference on New Diamond and Nano Carbons NDNC 2022, Jun 2022, Kanazawa, Japan
Communication dans un congrès
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Commutation time of non-volatile photo-switch based on diamond Junction Field Effect Transistor26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès
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Deep-Depletion diamond metal-oxide-semiconductor field-effect transistor with source-field plate for power converters32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès
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How a diamond pn junction can be used to fabricate a non-volatile photo-switch?26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès
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Commutation time of non-volatile photo-switch based on diamond Junction Field Effect Transistor15th International Conference on New Diamond and Nano Carbons NDNC 2022, Jun 2022, Kanazawa, Japan
Communication dans un congrès
hal-03738050v1
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Non-volatile tuning of normally-on and off states of the deep depletion ZrO2/diamond MOSFETs32nd International Conference on Diamond and Carbon Materials, Sep 2022, Lisbonne, Portugal
Communication dans un congrès
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Design of a Source Field-Plated Deep-Depletion Diamond MOSFETsMRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu, United States
Communication dans un congrès
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Electro-thermal simulations of a diamond MOSFET26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium
Communication dans un congrès
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Diamond Inter-Digited JFET for Power Electronic Devices31st International Conference on Diamond and Carbon Materials, Sep 2021, Virtual Meeting (tentative: Palma), Spain
Communication dans un congrès
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Hybrid power module with Diamond and SiC power devices: modeling, performances and challengesMRS Spring Meeting 2021, Apr 2021, Seattle, United States
Communication dans un congrès
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Towards the implementation of diamond power devices in power converters and measurements of their switching lossesMRS Spring Meeting 2021, Apr 2021, Seattle, United States
Communication dans un congrès
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175V, > 5.4 MV/cm, 50 m(omega).cm2 at 250°C Diamond MOSFET and its reverse conduction2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩
Communication dans un congrès
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Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissanceSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
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200V, 4MV/cm lateral diamond MOSFET2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩
Communication dans un congrès
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Diamond Devices for Power Electronics11th Conference on New Diamond and Nano Carbons, May 2017, Cairns, Australia
Communication dans un congrès
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Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States
Communication dans un congrès
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La diode Schottky en diamant : le présent et le futurSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
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Simulation numérique et caractérisation de composants de puissance en diamantSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
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Enabling high switching speed for diamond power transistors3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France
Communication dans un congrès
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Comparison of atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated boron doped diamondSBDD 2014, Feb 2014, Hasselt, Belgium
Communication dans un congrès
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Diamond bipolar device simulationIEEE Workshop on Wide Bandgap Power Devices and Applications, Oct 2013, Columbus, United States
Communication dans un congrès
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Models and parameters study for diamond electronic devices simulations74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan
Communication dans un congrès
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Diamond MIS TransistorUnited States, Patent n° : US11569381 (B2). 2023
Brevet
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