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Nicolas Rouger
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Documents
Affiliations actuelles
- 405657
Identifiants chercheurs
- nicolas-rouger
- 0000-0002-2161-9043
- IdRef : 190456760
Site web
- https://scholar.google.fr/citations?user=K1uNl9AAAAAJ
Présentation
My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters.
As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Since Jan. 2020, I have the privilege to be the head of this research group, composed of 35 persons, and work closely with other group leaders and laboratory board of directors, to continuously improve our activities.
I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.
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Diamond semiconductor performances in power electronics applicationsDiamond and Related Materials, 2020, 110, pp.108154. ⟨10.1016/j.diamond.2020.108154⟩
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hal-02988340v1
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High temperature operation of a monolithic bidirectional diamond switchDiamond and Related Materials, 2020, 111, pp.108185. ⟨10.1016/j.diamond.2020.108185⟩
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hal-03017013v1
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Design of Diamond Power Devices: Application to Schottky Barrier DiodesEnergies, 2019, 12 (12), pp.2387. ⟨10.3390/en12122387⟩
Article dans une revue
hal-02377365v1
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Diamond power devices: state of the art, modelling, figures of merit and future perspectiveJournal of Physics D: Applied Physics, 2019, 53 (9), pp.093001. ⟨10.1088/1361-6463/ab4eab⟩
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hal-02377372v1
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Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameterDiamond and Related Materials, 2017, 78, pp.83-87. ⟨10.1016/j.diamond.2017.08.008⟩
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hal-01590613v1
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Towards the implementation of diamond power devices in power converters and measurements of their switching lossesMRS Spring Meeting 2021, Apr 2021, Seattle, United States
Communication dans un congrès
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Diamond Schottky barrier diodes for power electronics applicationsECCE 2018, Sep 2018, Portland, United States
Communication dans un congrès
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Diodes Schottky en Diamant : augmentation du calibre en courant et parallélisationSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02981846v1
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Parallel and interleaved structures for diamond Schottky diodesEPE 2017 (ECCE Europe), Sep 2017, Varsovie, Poland
Communication dans un congrès
hal-01590604v1
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Diamond Devices for Power Electronics11th Conference on New Diamond and Nano Carbons, May 2017, Cairns, Australia
Communication dans un congrès
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