Nombre de documents

12

Nicolas Mauran


Article dans une revue5 documents

  • Fabrice Caignet, Nicolas Nolhier, Marise Bafleur, Anqing Wang, Nicolas Mauran. On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress. Microelectronics Reliability, Elsevier, 2013, 53 (9-11), pp.1278-1283. 〈10.1016/j.microrel.2013.07.056〉. 〈hal-00941840〉
  • Jinyu Jason Ruan, Nicolas Monnereau, David Trémouilles, Nicolas Mauran, Fabio Coccetti, et al.. An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices. IEEE Transactions on Instrumentation and Measurement, Institute of Electrical and Electronics Engineers, 2012, pp.456-461. 〈10.1109/TIM.2011.2161937〉. 〈hal-00668827〉
  • Philippe Artillan, Magali Brunet, David Bourrier, Jean-Pierre Laur, Nicolas Mauran, et al.. Integrated LC filter on silicon for DC-DC converter applications. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2011, 26 (8), pp.2319-2325. 〈10.1109/TPEL.2010.2102776〉. 〈hal-01443073〉
  • Loïc Théolier, Hicham Mahfoz-Kotb, Karine Isoird, Frédéric Morancho, Sandrine Assié-Souleille, et al.. A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30 (6), pp.687 - 689. 〈10.1109/LED.2009.2020348〉. 〈hal-00991660〉
  • Géraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, et al.. Analysis and Compact Modeling of a Vertical Grounded-Base NPN Bipolar Transistor used as ESD Protection in a Smart Power Technology. IEEE Journal of Solid-State Circuits, Institute of Electrical and Electronics Engineers, 2001, 36 (9), pp.1373-1381. 〈hal-00143927〉

Communication dans un congrès6 documents

  • Rémi Bèges, Fabrice Caignet, Patrice Besse, Jean-Philippe Laine, Alain Salles, et al.. TLP-based Human Metal Model stress generator and analysis method of ESD generators. Electrical Overstress / Electrostatic Discharge Symposium (EOS/ESD 2015), Sep 2015, Reno, United States. 2015, 〈10.1109/EOSESD.2015.7314777〉. 〈hal-01239451〉
  • David Trémouilles, Antoine Delmas, Nicolas Mauran, Nicolas Nolhier, Houssam Arbess, et al.. Transient-TLP (T-TLP): a simple method for accurate ESD protection transient behavior measurement. EOS/ESD Symposium, Sep 2013, LAS VEGAS, United States. pp.258-267, 2013. 〈hal-01056511〉
  • Thomas Epert, Fabrice Caignet, Christophe Viallon, Anqing Wang, Nicolas Mauran, et al.. Oscilloscope intégré sur puce appliqué à la caractérisation d'un générateur d'impulsions à 20 GHz. 18èmes Journées Nationales Microondes, May 2013, Paris, France. pp.4, 2013. 〈hal-00924176〉
  • Fabien Thion, Karine Isoird, Dominique Planson, Marie-Laure Locatelli, Henri Schneider, et al.. Réalisation et caractérisation de diodes Schottky en diamant monocristallin protégées par plaque de champ sur Si3N4. Conférence Electronique de Puissance du Futur (EPF 2012), Jul 2012, BORDEAUX, France. 4 p., 2012. 〈hal-01005917〉
  • Antoine Delmas, Nicolas Nolhier, David Trémouilles, Marise Bafleur, Nicolas Mauran, et al.. Accurate Transient Behavior Measurement of High- Voltage ESD Protections Based on a Very Fast Transmission-Line Pulse System. 31st Electrical Overstress/Electrostatic Discharge Symposium, 2009. EOS/ESD Symposium, Aug 2009, ANAHEIM, United States. pp.165-172, 2009. 〈hal-00445676〉
  • Nicolas Bailly, Jean-Marie Dilhac, Christophe Escriba, Claude Vanhecke, Nicolas Mauran, et al.. ENERGY SCAVENGING BASED ON TRANSIENT THERMAL GRADIENTS: APPLICATION TO STRUCTURAL HEALTH MONITORING OF AIRCRAFTS. 8th International Workshop on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS 2008), Nov 2008, SENDAI, Japan. pp.205-208, 2008. 〈hal-00384129〉

Poster1 document