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Degradations during pulsed measurements in temperature of AlGaN/GaN HEMTs

 Y. Douvry , Virginie Hoel , Jean-Claude de Jaeger , N. Defrance , Nathalie Malbert , et al.
European Solid-State Device Research Conference 2010, Sep 2010, Séville, Spain. pp.1
Communication dans un congrès hal-00585101v1

Thermal beheviours of AlGaN/GaN HEMT devices

 Raphaël Aubry , Jean-Claude Jacquet , Erwan Morvan , Charu Dua , N. Defrance , et al.
ESA/DGA Workshop, 2007, Noordwijk, Netherlands
Communication dans un congrès hal-00367423v1

Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

 S. Rennesson , F. Lecourt , N. Defrance , M. Chmielowska , Sébastien Chenot , et al.
IEEE Transactions on Electron Devices, 2013, 60, pp.3105-3111. ⟨10.1109/TED.2013.2272334⟩
Article dans une revue hal-00872025v1

Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts

 Antoine Chanuel , Yveline Gobil , Chuan Lun Hsu , Matthew Charles , Marianne Coig , et al.
IEEE Transactions on Electron Devices, 2022, 69 (10), pp.5530-5535. ⟨10.1109/TED.2022.3201837⟩
Article dans une revue hal-03775876v1
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AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology

 Mahmoud Abou Daher , Marie Lesecq , Pascal Tilmant , N. Defrance , Michel Rousseau , et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (3), pp.033201. ⟨10.1116/1.5143418⟩
Article dans une revue hal-02929037v1

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

 Marie Lesecq , E. Frayssinet , Marc Portail , M Bah , N. Defrance , et al.
13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020), Oct 2021, Tours, France
Communication dans un congrès hal-04038119v1

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

 Yvon Cordier , Remi Comyn , Eric Frayssinet , Mario Khoury , Marie Lesecq , et al.
physica status solidi (a), 2018, 215 (9), ⟨10.1002/pssa.201700637⟩
Article dans une revue hal-03185112v1

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

 N. Malbert , N. Labat , A. Curutchet , C. Sury , Virginie Hoel , et al.
IEEE International Reliability Physics Symposium, IRPS 2010, 2010, United States. pp.139-145, ⟨10.1109/IRPS.2010.5488839⟩
Communication dans un congrès hal-00550009v1

Temperature dependent degradation modes in AlGaN/GaN HEMTs

 Y. Douvry , Virginie Hoel , Jean-Claude de Jaeger , N. Defrance , N. Malbert , et al.
5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Paris, France. pp.114-117
Communication dans un congrès hal-00550022v1

Impact of gate length on the device performance of passivated InAlN/GaN HFET

 N. Ketteniss , F. Lecourt , H. Behmenburg , A. Noculak , N. Defrance , et al.
35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Italy. pp.1-2
Communication dans un congrès hal-00603114v1

Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT

 Charles Pitaval , Cédric Lacam , N. Defrance , Christophe Gaquière , Nicolas Michel , et al.
physica status solidi (a), 2023, 220 (16), pp.2200476. ⟨10.1002/pssa.202200476⟩
Article dans une revue hal-03875911v1

Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors

 Adrien Cutivet , Philippe Altuntas , N. Defrance , Etienne Okada , Vanessa Avramovic , et al.
10th European Microwave Integrated Circuits Conference (EuMIC), Sep 2015, Paris, France. pp.93-96, ⟨10.1109/EuMIC.2015.7345076⟩
Communication dans un congrès hal-03276915v1

Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer

 Mahmoud Abou Daher , Marie Lesecq , N. Defrance , Etienne Okada , Bertrand Boudart , et al.
Microwave and Optical Technology Letters, 2021, 63 (9), pp.2376-2380. ⟨10.1002/mop.32919⟩
Article dans une revue hal-03249292v1

Étude du comportement thermique de différents substrats à partir d'un modèle physico-thermique

 Xing Tang , Michel Rousseau , N. Defrance , A. Soltani , Virginie Hoel , et al.
16èmes Journées Nationales Microondes, JNM 2009, 2009, France. pp.6F-15, 1-4
Communication dans un congrès hal-00480442v1

Microwave power performance on AlGaN/GaN HEMTs on composite substrate

 Jean-Claude de Jaeger , Virginie Hoel , N. Defrance , Y. Douvry , Christophe Gaquière , et al.
4th European Microwave Integrated Circuits Conference, EuMIC 2009, 2009, Italy. pp.144-147
Communication dans un congrès hal-00474461v1

Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology

 Alain Agboton , N. Defrance , Philippe Altuntas , Vanessa Avramovic , Adrien Cutivet , et al.
43rd European Solid-State Device Research Conference, ESSDERC 2013, 2013, Bucharest, Romania. pp.57-60, ⟨10.1109/ESSDERC.2013.6818818⟩
Communication dans un congrès hal-00997378v1

Microwave power capabilities of AlGaN/GaN HEMTs on composite substrates

 Jean-Claude de Jaeger , Virginie Hoel , N. Defrance , Christophe Gaquière , H. Gerard , et al.
ESA/MOD Workshop on GaN Microwave Component Technologies, 2009, Germany. pp.76-86
Communication dans un congrès hal-00573165v1
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Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

 Micka Bah , Damien Valente , Marie Lesecq , N. Defrance , Maxime Garcia Barros , et al.
Scientific Reports, 2020, 10 (1), pp.14166. ⟨10.1038/s41598-020-71064-0⟩
Article dans une revue hal-02929022v1
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Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

 B. Damilano , Marie Lesecq , Di Zhou , Éric Frayssinet , Sebastien Chenot , et al.
IEEE Photonics Technology Letters, 2018, 30 (17), pp.1567-1570. ⟨10.1109/LPT.2018.2858000⟩
Article dans une revue hal-02304909v1

First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor

 Sarra Mhedhbi , Marie Lesecq , Philippe Altuntas , N. Defrance , Etienne Okada , et al.
IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
Article dans une revue hal-03270110v1

Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality

 Edoardo Brezza , Paul Dumas , Alexis Gauthier , Fanny Hilario , Pascal Chevalier , et al.
Microelectronics Reliability, 2022, 139, pp.114847. ⟨10.1016/j.microrel.2022.114847⟩
Article dans une revue hal-03852631v1

A method to determine wide bandgap power devices packaging interconnections

 Loris Pace , N. Defrance , Jean-Claude de Jaeger , Arnaud Videt , Nadir Idir
23rd IEEE Workshop on Signal and Power Integrity (SPI), Jun 2019, Chambery, France. pp.1-4, ⟨10.1109/SaPIW.2019.8781641⟩
Communication dans un congrès hal-03276911v1
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Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications

 Marie Lesecq , Éric Frayssinet , Marc Portail , Micka Bah , Nicolas Defrance , et al.
International Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany
Communication dans un congrès hal-04037282v1
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Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

 Florent Albany , François Lecourt , Ewa Walasiak , N. Defrance , Arnaud Curutchet , et al.
Microelectronics Reliability, 2021, 126, pp.114291. ⟨10.1016/j.microrel.2021.114291⟩
Article dans une revue hal-03539673v1

Resistive nickel temperature sensor integrated into short-gate length AlGaN/GaN HEMT dedicated to RF applications

 Flavien Cozette , Marie Lesecq , Adrien Cutivet , N. Defrance , Michel Rousseau , et al.
IEEE Electron Device Letters, 2018, 39 (10), pp.1-1. ⟨10.1109/LED.2018.2864643⟩
Article dans une revue hal-02273384v1

An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT

 F. Albany , A. Curutchet , N. Labat , F. Lecourt , E. Walasiak , et al.
15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240, https://ieeexplore.ieee.org/abstract/document/9337362
Communication dans un congrès hal-03362260v1

Impact of the bending on the electroluminescence of flexible InGaN/GaN light-emitting diodes

 Gema Tabares Jimenez , Sarra Mhedhbi , Marie Lesecq , Benjamin Damilano , Julien Brault , et al.
IEEE Photonics Technology Letters, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩
Article dans une revue hal-03270097v1

STARGAN : études de structures avancées de la filière nitrure de gallium (GaN)

 François Lecourt , Yannick Douvry , Marie Lesecq , N. Defrance , Alain Agboton , et al.
Journées Nationales en Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France
Communication dans un congrès hal-00941541v1

Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz

 Stéphanie Rennesson , M. Chmielowska , S. Chenot , Yvon Cordier , François Lecourt , et al.
10th International Conference on Nitride Semiconductors, ICNS-10, 2013, Washington, DC, United States
Communication dans un congrès hal-00987956v1

Modeling and characterization of piezoelectric beams based on an aluminum nitride thin-film layer

 Etienne Herth , E. Algré , Jean-Yves Rauch , Jean-Claude Gerbedoen , N. Defrance , et al.
physica status solidi (a), 2016, 213 (1), pp.114 - 121. ⟨10.1002/pssa.201532302⟩
Article dans une revue istex hal-01446379v1
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