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176 résultats
Self-Organization in Growth of InAs quantum dot and quantum dash lasers on InP for 1,55 µm optical telecommunicationsThe third Workshop on laser science and applications, 2006, Damascus, Syria
Communication dans un congrès
hal-00485703v1
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Etude Expérimentale du Gain d'un Guide Plan à Base d'Îlots quantiques InAs/InP(311)B dans le domaine spectral 1.55 µm8ème COlloque sur les Lasers et l'Optique Quantique (COLOQ 8), Sep 2003, Toulouse, France
Communication dans un congrès
hal-00149413v1
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Etude de l'émission laser par pompage optique de guides semi-conducteur à îlots quantiques InAs/InP à 1,52 µmJournée Thématique de l'Action Spécifique n° 13 CNRS-STIC " Boites quantiques pour les télécommunications optiques ", Jun 2003, Marcoussis, France
Communication dans un congrès
hal-00148945v1
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Laser et amplificateurs à Ilots QuantiquesColloque de l'Action Spécifique n°36 CNRS-STIC " Communications Numériques Optiques et Systèmes "Tout Optique" " (COSTO), Dec 2003, Paris, France
Communication dans un congrès
hal-00148590v1
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UHVCVD-MBE growth for tandem solar cells4th PhotoVoltaic Technical Conference (PVTC 2013), May 2013, Aix-en-Provence, France
Communication dans un congrès
hal-00918732v1
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structural characterization of MBE grown GaP/Si nanolayerseuro-MBE, Mar 2011, Alpe d'Huez, France
Communication dans un congrès
hal-00654309v1
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Self-organized growth of InAs quantum dots on InP(001)SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.G. Elias
Communication dans un congrès
hal-00486675v1
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Structural charaterisation of GaP/Si nanolayersCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1-4
Communication dans un congrès
hal-00654292v1
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Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonicsEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès
hal-01497220v1
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Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μmSecond French Research Organizations - Tohoku University Joint Workshop on Frontier Materials, Nov 2009, Sendai, Japan. p-23
Communication dans un congrès
hal-00491459v1
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Photoelectrode/Electrolyte interfacial band lineup engineering with alloyed III-V thin films grown on Si substrate.Journal of Materials Chemistry C, 2024, Journal of Materials Chemistry C, 12 (3), pp.1091-1097. ⟨10.1039/d3tc02556j⟩
Article dans une revue
hal-04383334v1
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
hal-00654285v1
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Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cellsSolar Energy Materials and Solar Cells, 2021, 221, pp.110888. ⟨10.1016/j.solmat.2020.110888⟩
Article dans une revue
hal-03031939v1
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EQUIPEX NANOFUTUR : IMPLANTATION D'UN CLUSTER DE CROISSANCE POUR LES MATÉRIAUX ET COMPOSANTS III-V EPITAXIES A L'INSTITUT FOTONMATEPI 2023, Jul 2023, Paris, France
Communication dans un congrès
hal-04225150v1
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Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPNJournal of Crystal Growth, 2013, 377, pp.17-21. ⟨10.1016/j.jcrysgro.2013.04.052⟩
Article dans une revue
istex
hal-00918658v1
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Room Temperature Laser Emission of 1.5 µm from InAs/InP(311)B Quantum DotsSemiconductor Science and Technology, 2002, Vol.17 (n° 2), pp.L5-L7. ⟨10.1088/0268-1242/17/2/102⟩
Article dans une revue
istex
hal-00145613v1
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Lasers à îlots quantiques InAs/InP émettant à 1.55 µm pompés électriquement10èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, La Grande Motte, France
Communication dans un congrès
hal-00149423v1
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Lasers devices based on nanostructures grown on InP substrate for 1.55 μm emissionWorkshop Frontier 2010, Dec 2010, Albi, France
Communication dans un congrès
hal-00589343v1
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A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP substrate28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.889, ⟨10.1063/1.2730177⟩
Communication dans un congrès
hal-00491466v1
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Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrateApplied Physics Letters, 2019, 114 (17), pp.173102. ⟨10.1063/1.5091058⟩
Article dans une revue
hal-02119035v1
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Sb surface mediated growth of InAs on InP(100) and (311)B substratesEuro-mbe conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918667v1
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Single InAs quantum dots morphology and local electronic properties on (113)B InP substrateeuro-MBE, Mar 2011, Alpe d'Huez, France
Communication dans un congrès
hal-00654305v1
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Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dotsApplied Physics Letters, 2011, 99, pp.143123. ⟨10.1063/1.3646911⟩
Article dans une revue
hal-00654296v1
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Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures, and Fermi levelsPhysical Review B, 2022, 106 (16), pp.165310. ⟨10.1103/PhysRevB.106.165310⟩
Article dans une revue
hal-03966732v1
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Solar Water Splitting: surface energy engineering of GaP Template on SiEuropean Materials Research Society - Spring Meeting 2019 (E-MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States
Communication dans un congrès
hal-02114792v1
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Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on siliconJournal of Applied Physics, 2012, 112 (5), pp.053521. ⟨10.1063/1.4751024⟩
Article dans une revue
hal-00726722v1
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Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrateIPRM, Indium Phosphide & Related Materials, May 2009, Newportbeach, United States. pp.41 - 44, ⟨10.1109/ICIPRM.2009.5012422⟩
Communication dans un congrès
hal-00485799v1
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Is a substrate miscut really required for high quality III-V/Si monolithic integration?21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03402689v1
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Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dotseuro-MBE conference, Mar 2007, Sierra nevada, Granada, France. pp.1
Communication dans un congrès
hal-00491810v1
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Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on siliconEuro-MBE 2015, Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01147439v1
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