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Nathalie BATUT
11
Documents
Identifiants chercheurs
- nathalie-batut
- IdRef : 061777366
Présentation
A compléter ....
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Modeling of carrier lifetime based on Deep-Level Transient Spectroscopy for power PIN diodes2022 IEEE International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM), Oct 2022, Tunis, Tunisia. pp.1-6, ⟨10.1109/CISTEM55808.2022.10043947⟩
Communication dans un congrès
hal-04010867v2
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Simulated 1200V SiC-MOSFET short-circuit behavioricrepq2018, Mar 2018, Salamanca, Spain
Communication dans un congrès
hal-01862351v1
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Gummel-Poon modeling of a New Super-Gain BJT and an innovative 600V AC switchSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361544v1
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BJT static behavior improvement by modification of the epitaxial layer27th International Conference on Microelectronics Proceedings (MIEL), 2010, May 2010, Nis, Serbia. pp.79-82
Communication dans un congrès
hal-00991551v1
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BJT application expansion by insertion of superjunction22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, Jun 2010, Hiroshima, Japan. pp.157 - 160
Communication dans un congrès
hal-00991541v1
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Perfectionnements apportés aux diodes SchottkyFrance, N° de brevet: 00 401643.2-2203. Rapport LAAS n° 00219. 2000
Brevet
hal-01862318v1
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