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Nathalie Batut

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Article dans une revue5 documents

  • Sébastien Jacques, Zheng Ren, Sébastien Bissey, Ambroise Schellmanns, Nathalie Batut, et al.. An Innovative Solar Production Simulator to Better Teach the Foundations of Photovoltaic Energy to Students. WSEAS Transactions on advances in Engineering Education, 2014, 11, pp.11-20. 〈hal-01810893〉
  • Zheng Ren, Sébastien Jacques, Yubing Song, Adelphe Caldeira, Guillaume Goubard, et al.. Development and Static Mode Characterization of a New Low-Loss AC Switch Based on Super-Gain BJT. Journal of Energy and Power Engineering, 2014, 8 (2), pp.357-364. 〈hal-01833053〉
  • Sébastien Jacques, Adelphe Caldeira, Ambroise Schellmanns, Zheng Ren, Nathalie Batut. New Multilevel Mixed Topology Development to Improve Inverter Robustness for Domestic Photovoltaic Installations. Journal of Power and Energy Engineering, 2013, 01 (05), pp.1-6. 〈10.4236/jpee.2013.15001〉. 〈hal-01810898〉
  • Luong Viet Phung, Nathalie Batut, Ambroise Schellmanns, Sébastien Jacques. A Review on Selected Patents about Trends Regarding Silicon Monolithic Power AC Switches. Recent Patents on Electrical & Electronic Engineering, 2012, 5 (3), pp.222 - 230. 〈10.2174/2213111611205030222〉. 〈hal-01636532〉
  • Sébastien Jacques, Adelphe Caldeira, Nathalie Batut, Ambroise Schellmanns, René Leroy, et al.. Lifetime Prediction Modeling of Non-Insulated TO-220AB Packages with Lead-Based Solder Joints during Power Cycling. Microelectronics Reliability, Elsevier, 2012, 52 (1), pp.212-216. 〈10.1016/j.microrel.2011.08.017〉. 〈hal-01810917〉

Communication dans un congrès4 documents

  • Guillaume Goubard, Zheng Ren, Nathalie Batut, Ambroise Schellmanns. Simulated 1200V SiC-MOSFET short-circuit behavior. icrepq2018, Mar 2018, Salamanca, Spain. 〈hal-01862351〉
  • Zheng Ren, Nathalie Batut, Ambroise Schellmanns. Gummel-Poon modeling of a New Super-Gain BJT and an innovative 600V AC switch. Symposium de Genie Electrique, Jun 2016, Grenoble, France. 〈hal-01361544〉
  • Loïc Théolier, Luong Viet Phung, Nathalie Batut, Ambroise Schellmanns, Yves Raingeaud, et al.. BJT static behavior improvement by modification of the epitaxial layer. 27th International Conference on Microelectronics Proceedings (MIEL), 2010, May 2010, Nis, Serbia. pp.79-82, 2010. 〈hal-00991551〉
  • Loïc Théolier, Chawki Benboujema, Ambroise Schellmanns, Nathalie Batut, Yves Raingeaud, et al.. BJT application expansion by insertion of superjunction. 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, Jun 2010, Hiroshima, Japan. pp.157 - 160, 2010. 〈hal-00991541〉

Brevet1 document

  • N. Cézac, Frédéric Morancho, Henri Tranduc, Pierre Rossel. Perfectionnements apportés aux diodes Schottky. France, N° de brevet: 00 401643.2-2203. Rapport LAAS n° 00219. 2000. 〈hal-01862318〉