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Nombre de documents

45

Matthieu Petit - Aix-Marseille Université / CINaM-CNRS UMR7325


Article dans une revue44 documents

  • Matthieu Petit, Lisa Michez, Jean-Manuel Raimundo, Philippe Dumas. Electrical and optical measurements of the bandgap energy of a light-emitting diode. Physics Education, IOP Publishing, 2016, 51 (2), pp.025003. <http://iopscience.org/ped>. <10.1088/0031-9120/51/2/025003>. <hal-01266699>
  • Matthieu Petit, Ryoma Hayakawa, Yutaka Wakayama, Vinh Le Thanh, Lisa Michez. Mn5Ge3C0.6/Ge(111) Schottky contacts tuned by a n-type ultra-shallow doping layer. Journal of Physics D: Applied Physics, IOP Publishing, 2016, 49 (35), pp.355101. <https://iopscience.iop.org/article/10.1088/0022-3727/49/35/355101/meta;jsessionid=D52B1E3D8710F48D749AE6732A05AF08.c4.iopscience.cld.iop.org#>. <10.1088/0022-3727/49/35/355101>. <hal-01352715>
  • R. Hayakawa, Matthieu Petit, K. Higashiguchi, K. Matsuda, T. Chikyow, et al.. Interface engineering for improving optical switching in a diarylethene-channel transistor. Organic Electronics, Elsevier, 2015, 21, pp.149-154. <hal-01150590>
  • L.-A. Michez, F. Virot, Matthieu Petit, R. Hayn, L. Notin, et al.. Magnetic anisotropy and magnetic domain structure in C-doped Mn5Ge3. Journal of Applied Physics, American Institute of Physics, 2015, 118 (043906), <http://scitation.aip.org/content/aip/journal/jap/118/4/10.1063/1.4927423>. <10.1063/1.4927423>. <hal-01206141>
  • Matthieu Petit, Lisa Michez, Charles-Emmanuel Dutoit, Sylvain Bertaina, Voicu Dolocan, et al.. Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy. Thin Solid Films, Elsevier, 2015, 589, pp.427-432. <http://www.sciencedirect.com/science/article/pii/S0040609015006057#>. <10.1016/j.tsf.2015.05.068>. <hal-01162158>
  • Charles Emmanuel Dutoit, Voicu Dolocan, Michael Kuzmin, Lisa Michez, Matthieu Petit, et al.. Ferromagnetic resonance and magnetic damping in C-doped Mn 5 Ge 3. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 49 (4), pp.045001. <https://iopscience.iop.org/article/10.1088/0022-3727/49/4/045001>. <10.1088/0022-3727/49/4/045001>. <hal-01266713>
  • T.K.P. Luong, A. Ghrib, M.T. Dau, M.A. Zrir, M. Stoffel, et al.. Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source. Thin Solid Films, Elsevier, 2014, 557, pp.70-75. <hal-00975160>
  • L. Assaud, E. Monyoncho, K. Pitzschel, A. Allagui, Matthieu Petit, et al.. 3D-nanoarchitectured Pd/Ni catalysts Prepared by atomic layer deposition for formic acid electrooxidation. Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2014, 5, pp.162. <hal-00975158>
  • Christine Robert-Goumet, M.A. Mahjoub, G. Monier, Luc Bideux, S. Chelda, et al.. Development of Monte-Carlo simulations for nano-patterning surfaces associated with MM-EPES analysis Application to different Si (111) nanoporous surfaces. Surface Science, Elsevier, 2013, 618, pp.72-77. <hal-00919579>
  • A. Spiesser, M.T. Dau, L.A. Michez, Matthieu Petit, V. Le Thanh. The effect of carbon doping on structural and magnetic properties of Mn5Ge3/Ge heterostructures. ECS Transactions, Electrochemical Society, Inc., 2013, 58 (9), pp.157-165. <hal-00919566>
  • I.A. Fischer, C. Sürgers, Matthieu Petit, V. Le Thanh, J. Schulze. Mn5Ge3C0.8 contact for spin injection into Ge. ECS Transactions, Electrochemical Society, Inc., 2013, 58 (9), pp.29-36. <hal-00914756>
  • V. Le Thanh, A. Spiesser, M.T. Dau, S.F. Olive-Mendez, L. Michez, et al.. Epitaxial growth and magnetic properties of Mn5Ge3/Ge and Mn5Ge3Cx/Ge heterostructures for spintronic applications. Advances in Natural Sciences : Nanoscience and Nanotechnology, IOP Publishing, 2013, 4, pp.043002. <hal-00914753>
  • T.K. P. Luong, M.T. Dau, M.A. Zrir, Mathieu Stoffel, V. Le Thanh, et al.. Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy. Journal of Applied Physics, American Institute of Physics, 2013, 114, pp.083504. <10.1063/1.4818945>. <hal-00914738>
  • Mt Dau, Vinh Le Thanh, Tg Le, A Spiesser, M Petit, et al.. Suppression of Mn segregation in Ge/Mn 5Ge 3 heterostructures induced by interstitial carbon. Thin Solid Films, Elsevier, 2012, 520 (8), pp.doi: 10.1016/j.tsf.2011.10.167. <hal-01326674>
  • T-G. Le, M.T. Dau, V. Le Thanh, D.N.H. Nam, Matthieu Petit, et al.. Growth competition between semiconducting Ge1-x Mnx nanocolumns and metallic Mn5Ge3 clusters. Advances in Natural Sciences : Nanoscience and Nanotechnology, IOP Publishing, 2012, 3, pp.025007. <hal-00697537>
  • A. Sellai, A. Mesli, Matthieu Petit, V. Le Thanh, D. Taylor, et al.. Barrier height and interface characteristics of Au/Mn 5 Ge 3 /Ge (1 1 1) Schottky contacts for spin injection. Semiconductor Science and Technology, IOP Publishing, 2012, 27 (3), pp.035014. <hal-00697520>
  • A. Spiesser, M.T. Dau, L. Michez, Matthieu Petit, C. Coudreau, et al.. Boosting the Curie temperature in carbon-doped Mn5Ge3/Ge heterostructures. International Journal of Nanotechnology, Inderscience, 2012, 9, pp.428-438. <hal-00697519>
  • M-T. Dau, V. Le Thanh, L.A. Michez, Matthieu Petit, T-G. Le, et al.. An unusual phenomenon of surface reaction observed during Ge overgrowth on Mn5Ge3/Ge(111) heterostructures. New Journal of Physics, Institute of Physics: Open Access Journals, 2012, 14, pp.103020-10303. <hal-00773485>
  • A. Spiesser, F. Virot, L.A. Michez, R. Hayn, S. Bertaina, et al.. Magnetic anisotropy in epitaxial Mn5Ge3 films. Physical Review B : Condensed matter and materials physics, American Physical Society, 2012, 86 (3), pp.035211. <hal-00773468>
  • G. Monier, Luc Bideux, Christine Robert-Goumet, Bernard Gruzza, Matthieu Petit, et al.. Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source. Surface Science, Elsevier, 2012, 606 (13-14), pp.1093-1099. <hal-00724331>
  • Matthieu Petit, M.-T. Dau, G. Monier, L. Michez, X. Barre, et al.. Carbon diffusion and reactivity in Mn5Ge3 thin films. physica status solidi (c), Wiley, 2012, 9 (6), pp.1374-1377. <hal-00724328>
  • M.T. Dau, Matthieu Petit, A. Watanabe, L. Michez, S.O. Mendez, et al.. Growth of Germanium Nanowires on Silicon(111) Substrates by Molecular Beam Epitaxy. Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2011, 11 (10), pp.9292-9295. <hal-00697521>
  • M.T. Dau, V. Lethanh, T.G. Le, A. Spiesser, Matthieu Petit, et al.. Mn segregation in Ge/Mn(5)Ge(3) heterostructures: The role of surface carbon adsorption. Applied Physics Letters, American Institute of Physics, 2011, 99 (15), pp.151908. <hal-00696025>
  • S. Hajjar, G. Garreau, L. Josien, J.L. Bubendorff, D. Berling, et al.. Morphology and composition of Au catalysts on Ge(111) obtained by thermal dewetting. Physical Review B : Condensed matter and materials physics, American Physical Society, 2011, 84 (12), pp.125325. <hal-00695995>
  • Tuan Dau, Matthieu Petit, Akihiro Watanabe, Lisa Michez, Sion Mendez, et al.. Growth of Germanium Nanowires on Silicon(111) Substrates by Molecular Beam Epitaxy. Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2011, 11 (10), pp.9292-9295. <http://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000010/art00135?token=004f16854b55c37b76504c486667252c236e6c247a724d2c6a332b257d7241255e4e6b63310f9da>. <10.1166/jnn.2011.4288>. <hal-01122595>
  • S Hajjar, G Garreau, L Josien, Jean-Luc Bubendorff, D Berling, et al.. Morphology and composition of Au catalysts on Ge(111) obtained by thermal dewetting. Physical Review B : Condensed matter and materials physics, American Physical Society, 2011, 84, pp.125325. <http://journals.aps.org/prb/abstract/10.1103/PhysRevB.84.125325>. <10.1103/PhysRevB.84.125325>. <hal-01122603>
  • M.-T. Dau, A. Spiesser, T. Le Giang, L.A. Michez, S.F. Olive-Mendez, et al.. Long range Mn segregation and intermixing during subsequent deposition of Ge capping layers on Mn5Ge3/Ge(111) heterostructures. Thin Solid Films, Elsevier, 2010, 518, pp.S266. <hal-00475830>
  • Matthieu Petit, R. Hayakawa, T. Chikyow, J.P. Hill, K. Ariga, et al.. Variable temperature characterization of N,N'-Bis(n-penty)terylene-3,4:11,12-tetracarboxylic diimide thin film transistor. Organic Electronics, Elsevier, 2009, 10 (6), pp.1187-1190. <hal-00419669>
  • N. Hiroshiba, R. Hayakawa, Matthieu Petit, T. Chikyow, K. Matsuishi, et al.. Structural analysis and transistor properties of hetero-molecular bilayers. Thin Solid Films, Elsevier, 2009, 518 (2), pp.441-443. <hal-00440707>
  • Matthieu Petit, Ryoma Hayakawa, Toyohiro Chikyow, Jonathan P. Hill, Katsuhiko Ariga, et al.. Variable temperature characterization of N,N′-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboxylic diimide thin film transistor. Organic Electronics, Elsevier, 2009, 10 (6), pp.1187-1190. <http://www.sciencedirect.com/science/article/pii/S1566119909001475>. <10.1016/j.orgel.2009.05.026>. <hal-01122617>
  • N. Hiroshiba, R. Hayakawa, Matthieu Petit, T. Chikyow, K. Matsuishi, et al.. Growth and structural characterization of molecular superlattice of quaterrylene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide. Organic Electronics, Elsevier, 2009, 10 (5), pp.1032-1036. <hal-00440706>
  • R. Hayakawa, Matthieu Petit, Y. Wakayama, T. Chikyow. Interface engineering for molecular alignment and device performance of quaterrylene thin films. Applied Physics Letters, American Institute of Physics, 2008, 93, pp.153301. <hal-00447725>
  • R. Hayakawa, Matthieu Petit, Y. Wakayama, T. Chikyow. « Analysis of carrier transport in quaterrylene thin film transistors formed by ultraslow vacuum deposition. Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.024506-1. <hal-00447724>
  • Matthieu Petit, R. Hayakawa, Y. Shirai, Y. Wakayama, J.P. Hill, et al.. Growth and electrical properties of N,N'-Bis(n-pentyl)terrylene-3,4:11,12-tetracarboximide thin films. Applied Physics Letters, American Institute of Physics, 2008, 92, pp.163301. <hal-00447723>
  • Matthieu Petit, Ryoma Hayakawa, Yasuhiro Shirai, Yutaka Wakayama, Jonathan P. Hill, et al.. Growth and electrical properties of N,N[sup ʹ]-bis(n-pentyl)terrylene- 3,4:11,12-tetracarboximide thin films. Applied Physics Letters, American Institute of Physics, 2008, 92 (16), pp.163301. <http://scitation.aip.org/content/aip/journal/apl/92/16/10.1063/1.2907689>. <10.1063/1.2907689>. <hal-01122616>
  • Matthieu Petit, Ryoma Hayakawa, Yutaka Wakayama, Toyohiro Chikyo. Early Stage of Growth of a Perylene Diimide Derivative Thin Film Growth on Various Si(001) Substrates. Journal of Physical Chemistry A, 2007, 111 (34), pp.12747-12751. <http://pubs.acs.org/doi/abs/10.1021/jp071876w>. <10.1021/jp071876w>. <hal-01122592>
  • Christine Robert-Goumet, S. Arabasz, B. Adamowicz, Matthieu Petit, Bernard Gruzza, et al.. Room temperature photoluminescence studies of nitrided InP(100). Materials Science and Engineering, Elsevier, 2006, 26, pp.378-382. <hal-00090388>
  • M. Petit, David Baca, S. Arabasz, Luc Bideux, N. Tsud, et al.. Nitridation of InP(100) surface studied by synchrotron radiation. Surface Science Letters, Elsevier, 2005, 583 (2-3), pp.212. <http://www.sciencedirect.com/science/article/pii/S0039602805003195>. <10.1016/j.susc.2005.03.040>. <hal-00272596>
  • Matthieu Petit, David Baca, S. Arabasz, Luc Bideux, Natalia Tsud, et al.. Nitridation of InP(1 0 0) surface studied by synchrotron radiation. Surface Science, Elsevier, 2005, 583 (2-3), pp.205-212. <10.1016/j.susc.2005.03.040>. <hal-00357526>
  • Matthieu Petit, Christine Robert-Goumet, Luc Bideux, Bernard Gruzza, V Matolin, et al.. Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies. Surface and Interface Analysis, Wiley-Blackwell, 2005, 37 (7), pp.615-620. <http://onlinelibrary.wiley.com/doi/10.1002/sia.2045/abstract;jsessionid=86F8E7E028DEC5EBBB3E1B5F8B313414.f03t01?systemMessage=Wiley+Online+Library+will+be+disrupted+on+7th+March+from+10%3A00-13%3A00+GMT+%2805%3A00-08%3A00+EST%29+for+essential+maintenance.++Apologies+for+the+inconvenience.>. <10.1002/sia.2045>. <hal-01122582>
  • Matthieu Petit, Christine Robert-Goumet, Luc Bideux, Bernard Gruzza, Z Benamara, et al.. Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma. Applied Surface Science, Elsevier, 2004, 234 (1-4), pp.451-456. <http://www.sciencedirect.com/science/article/pii/S0169433204006300>. <10.1016/j.apsusc.2004.05.029>. <hal-01122589>
  • Matthieu Petit, Y. Ould-Metidji, C. Robert, L. Bideux, B. Gruzza, et al.. First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPES.. Applied Surface Science, Elsevier, 2003, pp.606. <hal-00272496>
  • Matthieu Petit, Y. Ould-Metidji, C. Robert, L. Bideux, B. Gruzza, et al.. First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPES.. Applied Surface Science, Elsevier, 2003, pp.606. <hal-00272479>
  • Matthieu Petit, Yamina Andre Ould-Metidji, Christine Robert-Goumet, Luc Bideux, Bernard Gruzza, et al.. First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES. Applied Surface Science, Elsevier, 2003, 212-213, pp.601-608. <10.1016/S0169-4332(03)00399-4>. <hal-00357513>

Thèse1 document

  • Matthieu Petit. Etude par spectroscopies électroniques de la nitruration du phosphure d'indium. Matière Condensée [cond-mat]. Université Blaise Pascal - Clermont-Ferrand II, 2004. Français. <tel-00011393v2>