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Researcher identifiers

Number of documents


Moïra Hocevar

Previous Positions

  • since 2015 CNRS Research scientist @ Institut Néel Grenoble
  • 2013-2015 Researcher @ Institut Néel Grenoble
  • 2012-2013 Postdoc @ CEA Grenoble
  • 2008-2012 Postdoc @ TU Delft


  • 2005-2008 PhD in Electronics - INSA de Lyon
  • 2004-2005 Masters in Environmental Science - Université Paris VII Denis Diderot
  • 1999-2004 Masters in Materials Science engineering - INSA de Lyon


  • 2014: Ranked 1st at the CNRS competition in Section 5
  • 2013: 2nd round of ERC Starting Grant (not funded)
  • 2011: Poster prize Wilhem & Else Heraeus Seminar, Bad Honnef, Germany
  • 2010–2012: Marie-Curie European Fellowship
  • 2009: PhD prize of the "Club Electronique, Electrotechnique et Automatique"


  • Département Sciences et Génie des matériaux, INSA de Lyon France
  • Electronique, Travaux pratiques, 60h 2007
  • Département du Premier Cycle, INSA de Lyon France
  • Mesures Physiques, Travaux pratiques, 83h 2006–2007

PhD supervision

  • 2019–2022  An-Hsi Chen, ANR HYBRID: Epitaxial growth of hybrid nanowires for topological quantum computing (direction)
  • 2015–2018 Daria Beznasyuk, LANEF PhD Fellowship: High lattice mismatch GaAs-InAs nanowires for quantum photonics (co-supervision with J. Claudon, IRIG CEA Grenoble)

Master students supervision

  • An-Hsi Chen, M2 Nanophysics UGA, Growth and structural characterizations of hybrid nanowires 2019
  • Sergi Cuesta, M2 Nanophysics UGA (co-supervision with E. Monroy, IRIG CEA Grenoble), Semiconducting nanowire photodetectors 2019 (now PhD student at CEA-IRIG)
  • Anna Park, M1 Carnegie Mellon University, Pittsburgh, USA TEM and XRD studies of Sn/InAs thin films and nanowires 2019
  • Cristina Mier Gonzales, M2 Nanophysics UGA, Growth of Nb/InAs core-shell nanowires 2018 (now PhD student at CFM, San Sebastian, Spain)
  • Saranath Seshradi, M2 Erasmus Mundus, GaAs/InGaAs heterostructure nanowires 2018 (now PhD student at LiPhy, Saint Martin d’Hères)
  • Brian McMinn, M1 University of Pittsburgh, USA, Fabrication of Nb/InAs nanowire devices 2018

Research projects

  • "BIOPHOTON" Biomolecular detection using Nanophotodetectors Arrays CEA Programmes Transversaux de Compétences - Instrumentation et Détection 2020-2022
  • "HYBRID" Hybrid materials for quantum science and engineering ANR PIRE - PI 2018-2022
  • Hybrid materials to study topological states of matter Thomas Jefferson Fund - PI 2018-2020
  • "QDOT" Quantum Dot based Optomechanical Transducers ANR PRC 2017-2021
  • "Super-semi" Nanowires for quantum bits based on spin and Majorana fermions COOPERA Rhône-Alpes région - PI 2016-2018
  • "PHOTOSI35" Nanowires for photonics applications using Si/III-V heterostructures AGIR PEM UGA - PI 2015-2017
  • Hybrid superconductor/semiconductor nanowires Mini projet Institut Néel - PI 2015
  • "TOPONANO" Helical states and Majorana fermions in topological nanostructures ANR OH Risque 2015-2019

Journal articles27 documents

  • M. Pendharkar, B. Zhang, H. Wu, A. Zarassi, P. Zhang, et al.. Parity-preserving and magnetic field–resilient superconductivity in InSb nanowires with Sn shells. Science, American Association for the Advancement of Science, 2021, 372 (6541), pp.508-511. ⟨10.1126/science.aba5211⟩. ⟨hal-02429830⟩
  • D. V. Beznasyuk, P. Stepanov, Jean-Luc Rouvière, F. Glas, M. Verheijen, et al.. Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure. Physical Review Materials, American Physical Society, 2020, 4 (7), pp.074607. ⟨10.1103/PhysRevMaterials.4.074607⟩. ⟨hal-02429832⟩
  • Z. Su, R. Žitko, P. Zhang, H. Wu, D. Car, et al.. Erasing odd-parity states in semiconductor quantum dots coupled to superconductors. Physical Review B, American Physical Society, 2020, 101 (23), pp.235315. ⟨10.1103/PhysRevB.101.235315⟩. ⟨hal-02881117⟩
  • J Chen, B Woods, P Yu, M. Hocevar, D. Car, et al.. Ubiquitous Non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices. Physical Review Letters, American Physical Society, 2019, 123 (10), pp.107703. ⟨10.1103/PhysRevLett.123.107703⟩. ⟨hal-02332243⟩
  • Sergi Cuesta, M. Spies, V. Boureau, F. Donatini, Moïra Hocevar, et al.. Effect of Bias on the Response of GaN Axial p–n Junction Single-Nanowire Photodetectors. Nano Letters, American Chemical Society, 2019, 19 (8), pp.5506-5514. ⟨10.1021/acs.nanolett.9b02040⟩. ⟨hal-02326742⟩
  • S. Pairis, F. Donatini, M. Hocevar, D. Tumanov, N. Vaish, et al.. Shot-Noise-Limited Nanomechanical Detection and Radiation Pressure Backaction from an Electron Beam. Physical Review Letters, American Physical Society, 2019, 122 (8), pp.083603. ⟨10.1103/PhysRevLett.122.083603⟩. ⟨hal-02054430⟩
  • Z Su, A. Zarassi, J.-F Hsu, P San-Jose, E Prada, et al.. Mirage Andreev Spectra Generated by Mesoscopic Leads in Nanowire Quantum Dots. Physical Review Letters, American Physical Society, 2018, 121 (12), pp.127705. ⟨10.1103/PhysRevLett.121.127705⟩. ⟨hal-02332284⟩
  • D. V. Beznasyuk, Eric Robin, Martien den Hertog, Julien Claudon, Moïra Hocevar. Dislocation-free axial InAs-on-GaAs nanowires on silicon. Nanotechnology, Institute of Physics, 2017, 28 (36), pp.365602. ⟨10.1088/1361-6528/aa7d40⟩. ⟨hal-01555564⟩
  • R. Jayaprakash, F. G. Kalaitzakis, G. Christmann, K. Tsagaraki, Moïra Hocevar, et al.. Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap. Scientific Reports, Nature Publishing Group, 2017, 7, pp.5542. ⟨10.1038/s41598-017-06125-y⟩. ⟨hal-01576515⟩
  • A. Zarassi, Z. Su, J. Danon, J. Schwenderling, Moïra Hocevar, et al.. Magnetic field evolution of spin blockade in Ge/Si nanowire double quantum dots. Physical Review B, American Physical Society, 2017, 95 (15), pp.155416. ⟨10.1103/PhysRevB.95.155416⟩. ⟨hal-01555601⟩
  • Zhaoen Su, Alexandre Tacla, Moïra Hocevar, Diana Car, S.R. Plissard, et al.. Andreev molecules in semiconductor nanowire double quantum dots. Nature Communications, Nature Publishing Group, 2017, 8 (1), pp.585. ⟨10.1038/s41467-017-00665-7⟩. ⟨hal-01712990⟩
  • Jun Chen, Peng Yu, John Stenger, Moïra Hocevar, Diana Car, et al.. Experimental phase diagram of zero-bias conductance peaks in superconductor/semiconductor nanowire devices. Science Advances , American Association for the Advancement of Science (AAAS), 2017, 3 (9), pp.1701476. ⟨10.1126/sciadv.1701476⟩. ⟨hal-01712993⟩
  • Maciej Dąbrowski, Yanan Dai, Moïra Hocevar, Sergey Frolov, Hrvoje Petek. Nanoscale guiding and shaping of indium droplets . Applied Physics Letters, American Institute of Physics, 2016, 109 (26), pp.261602. ⟨10.1063/1.4973364⟩. ⟨hal-01428759⟩
  • Moïra Hocevar, Le Thuy Thanh Giang, Rudeesun Songmuang, Martien den Hertog, Lucien Besombes, et al.. Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires. Applied Physics Letters, American Institute of Physics, 2013, 102 (19), pp.191103. ⟨10.1063/1.4803685⟩. ⟨hal-00935527⟩
  • Moïra Hocevar, George Immink, Marcel Verheijen, Nika Akopian, Val Zwiller, et al.. Growth and optical properties of axial hybrid III–V/silicon nanowires. Nature Communications, Nature Publishing Group, 2012, 3 (1), ⟨10.1038/ncomms2277⟩. ⟨hal-02070690⟩
  • Michael Reimer, Gabriele Bulgarini, Nika Akopian, Moïra Hocevar, Maaike Bouwes Bavinck, et al.. Bright single-photon sources in bottom-up tailored nanowires. Nature Communications, Nature Publishing Group, 2012, 3 (1), ⟨10.1038/ncomms1746⟩. ⟨hal-02071152⟩
  • Sébastien Plissard, Dorris Slapak, Marcel Verheijen, Moïra Hocevar, George Immink, et al.. From InSb Nanowires to Nanocubes: Looking for the Sweet Spot. Nano Letters, American Chemical Society, 2012, 12 (4), pp.1794-1798. ⟨10.1021/nl203846g⟩. ⟨hal-02434316⟩
  • Gabriele Bulgarini, Michael Reimer, Moïra Hocevar, Erik Bakkers, Leo Kouwenhoven, et al.. Avalanche amplification of a single exciton in a semiconductor nanowire. Nature Photonics, Nature Publishing Group, 2012, 6 (7), pp.455-458. ⟨10.1038/nphoton.2012.110⟩. ⟨hal-02070682⟩
  • K. Naji, H. Dumont, G. Saint-Girons, J. Penuelas, G. Patriarche, et al.. Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon. Journal of Crystal Growth, Elsevier, 2012, 343 (1), pp.101-104. ⟨10.1016/j.jcrysgro.2011.12.062⟩. ⟨hal-02071144⟩
  • Rienk Algra, Moïra Hocevar, Marcel Verheijen, Ilaria Zardo, George Immink, et al.. Crystal Structure Transfer in Core/Shell Nanowires. Nano Letters, American Chemical Society, 2011, 11 (4), pp.1690-1694. ⟨10.1021/nl200208q⟩. ⟨hal-02071131⟩
  • Silke Diedenhofen, Olaf Janssen, Moïra Hocevar, Aurélie Pierret, Erik Bakkers, et al.. Controlling the Directional Emission of Light by Periodic Arrays of Heterostructured Semiconductor Nanowires. ACS Nano, American Chemical Society, 2011, 5 (7), pp.5830-5837. ⟨10.1021/nn201557h⟩. ⟨hal-02071137⟩
  • Moïra Hocevar, Gilles Patriarche, Abdelkader Souifi, Michel Gendry. Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide. Journal of Crystal Growth, Elsevier, 2011, 321 (1), pp.1-7. ⟨10.1016/j.jcrysgro.2011.01.067⟩. ⟨hal-02070640⟩
  • Aurélie Pierret, Moïra Hocevar, Silke Diedenhofen, Rienk Algra, E Vlieg, et al.. Generic nano-imprint process for fabrication of nanowire arrays. Nanotechnology, Institute of Physics, 2010, 21 (6), pp.065305. ⟨10.1088/0957-4484/21/6/065305⟩. ⟨hal-02070636⟩
  • Moïra Hocevar, Nicolas Baboux, Alain Poncet, Michel Gendry, Abdelkader Souifi. Large Improvement of Data Retention in Nanocrystal-Based Memories on Silicon Using InAs Quantum Dots Embedded in SiO2. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2009, 56 (11), pp.2657-2663. ⟨10.1109/TED.2009.2030659⟩. ⟨hal-02070630⟩
  • Moïra Hocevar, P. Regreny, A. Poncet, M. Gendry, A. Souifi. Electron retention in InAs-nanocrystals embedded in SiO2/Si for non-volatile memories. physica status solidi (c), Wiley, 2008, 5 (12), pp.3601-3604. ⟨10.1002/pssc.200780170⟩. ⟨hal-02070626⟩
  • Benoît Thiebaut, Agnès Lattuati-Derieux, Moïra Hocevar, Léon-Bavi Vilmont. Application of headspace SPME-GC-MS in characterisation of odorous volatile organic compounds emitted from magnetic tape coatings based on poly(urethane-ester) after natural and artificial ageing. Polymer Testing, Elsevier, 2007, 26 (2), pp.243-256. ⟨10.1016/j.polymertesting.2006.10.006⟩. ⟨hal-02070622⟩
  • Moïra Hocevar, Philippe Regreny, Armel Descamps, David Albertini, Guillaume Saint-Girons, et al.. InAs nanocrystals on SiO2∕Si by molecular beam epitaxy for memory applications. Applied Physics Letters, American Institute of Physics, 2007, 91 (13), pp.133114. ⟨hal-01939910⟩

Book sections3 documents

Theses1 document

  • Moïra Hocevar. Croissance et caractérisation électrique de nanocristaux d'InAs/SiO2 pour des applications de mémoires non volatiles sur silicium.. Matière Condensée [cond-mat]. INSA de Lyon, 2008. Français. ⟨NNT : 2008ISAL0072⟩. ⟨tel-00551840⟩