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160 résultats
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Optically-pumped continuous-wave terahertz sourcesConference on Quantum Sensing and Nanophotonic Devices XII, SPIE, Feb 2015, San Francisco, CA, United States. pp.937008, ⟨10.1117/12.2080756⟩
Communication dans un congrès
hal-03286185v1
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Terahertz wireless communications using photonic and electronic devices18th International Conference on Transparent Optical Networks (ICTON), Jul 2016, Trento, Italy. ⟨10.1109/ICTON.2016.7550375⟩
Communication dans un congrès
hal-03286179v1
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22 Gbps wireless communication system at 0.4 THz38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2013, Mainz, Germany. ⟨10.1109/IRMMW-THz.2013.6665491⟩
Communication dans un congrès
hal-03286171v1
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Les structures métamorphiques AlInAs/GaInAs sur substrat GaAs : croissance et applications20ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2001, 2001, St Aygulf, France
Communication dans un congrès
hal-00152677v1
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Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations2021 13th Spanish Conference on Electron Devices (CDE), Jun 2021, Sevilla, Spain. pp.94-97, ⟨10.1109/CDE52135.2021.9455727⟩
Communication dans un congrès
hal-04054156v1
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Quantum cascade transistor11th International Conference on Intersubband Transitions in Quantum Wells, ITQW 2011, 2011, Badesi, Sardinia, Italy
Communication dans un congrès
hal-00807126v1
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Radiation pattern measurements of an integrated transverse electromagnetic horn antenna using a terahertz photomixing setupIEEE Microwave and Wireless Components Letters, 2011, 21, pp.49-51. ⟨10.1109/LMWC.2010.2088383⟩
Article dans une revue
hal-00572643v1
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Optically power supplied Gbit/s wireless hotspot using 1.55 µm THz photomixer and heterodyne detection at 200 GHzElectronics Letters, 2010, 46, pp.1349-1350. ⟨10.1049/el.2010.2062⟩
Article dans une revue
hal-00548731v1
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Charge control and electron transport properties in InyAl1-yAs/InxGa1-xAs metamorphic HEMTs : effect of indium content2000, pp.102-105
Communication dans un congrès
hal-00158437v1
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High-speed photodiodes on silicon nitride with a bandwidth beyond 100 GHzCLEO: Science and Innovations 2022, OSA, May 2022, San Jose, CA, United States. pp.SM3K.3, ⟨10.1364/CLEO_SI.2022.SM3K.3⟩
Communication dans un congrès
hal-03774945v1
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Non-linear analysis of a broadband power amplifier at 300 GHz15th European Microwave Integrated Circuits Conference, Session EuMIC12 - Design and Characterisation Techniques,, Jan 2021, Utrecht, Netherlands. pp.209-212
Communication dans un congrès
hal-03348195v1
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High spectral purity microwave and terahertz oscillator6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013, 2013, Prague, Czech Republic. pp.40-42, ⟨10.1109/EFTF-IFC.2013.6702198⟩
Communication dans un congrès
hal-00944028v1
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Power potentiality at 94 GHz of InP HEMTs with large band gap channels2005, pp.137-140
Communication dans un congrès
hal-00154913v1
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High-Q silicon nitride drum resonators strongly coupled to gatesNano Letters, 2021, 21 (13), pp.5738-5744. ⟨10.1021/acs.nanolett.1c01477⟩
Article dans une revue
hal-03263144v1
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Microwave performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb double heterojunction bipolar transistorsIEEE Electron Device Letters, 2010, 31, pp.299-301. ⟨10.1109/LED.2010.2040241⟩
Article dans une revue
hal-00548566v1
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InAs/Al0.4Ga0.6Sb side gated vertical TFET on GaAs substrate28th International Conference on Indium Phosphide and Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), Jun 2016, Toyama, Japan. ⟨10.1109/ICIPRM.2016.7528571⟩
Communication dans un congrès
hal-03286183v1
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AlInAs/GaInAs HEMTs for power amplification at 60 GHzWorkshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2002, 2002, Austin, TX, United States
Communication dans un congrès
hal-00149711v1
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Oscillateur Micro-Onde à THz Ultra-StableJournée du club Optique Micro-ondes, SFO, Jun 2014, Lannion, France
Communication dans un congrès
hal-01142066v1
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100nm-gate-length In0.47Ga0.53As multi-gate MOSFET : fabrication and characterisation23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. pp.1-4
Communication dans un congrès
hal-00799971v1
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InAs based Esaki tunnel diodes17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p
Communication dans un congrès
hal-01018430v1
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Up to 100 Gbit/s short link using 300 GHz band Yagi-Uda antenna2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2021, Chengdu, China. pp.1-2, ⟨10.1109/IRMMW-THz50926.2021.9566991⟩
Communication dans un congrès
hal-03413395v1
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Sub-micron quantum cascadetransistors36th International Conference on Infrared, Millimeter and Terahertz Waves IRMMW-THz, 2011, Houston, United States
Communication dans un congrès
hal-01858362v1
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Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia
Communication dans un congrès
hal-00149713v1
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300 GHz link enabled by Yagi-Uda antenna2020 International Symposium on Antennas and Propagation (ISAP), Jan 2021, Osaka (virtual), Japan. ⟨10.23919/ISAP47053.2021.9391489⟩
Communication dans un congrès
hal-03223261v1
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Narrow linewidth tunable THz signal generation using a unitravelling carrier photodiode and a dual-mode laser37th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2012, Sep 2012, Wollongong, Australia. pp.1-2, ⟨10.1109/IRMMW-THz.2012.6380162⟩
Communication dans un congrès
hal-00803095v1
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Indoor 100 Gbit/s THz data link in the 300 GHz band using fast photodiodes25th International Conference on Telecommunications (ICT), Jun 2018, Saint Malo, France. pp.288-290, ⟨10.1109/ICT.2018.8464945⟩
Communication dans un congrès
hal-03286177v1
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Coherent THz communication at 200 GHz using a frequency comb, UTC-PD and electronic detectionElectronics Letters, 2014, 50 (5), pp.386-388. ⟨10.1049/el.2014.0056⟩
Article dans une revue
hal-03286173v1
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QAM-32/0.588 THz communication using electronic Schottky transceivers40th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Aug 2015, Hong Kong, Hong Kong SAR China. ⟨10.1109/IRMMW-THz.2015.7327665⟩
Communication dans un congrès
hal-03286182v1
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Study of resonant transport in InAs-based quantum hot electron transistorsAIP Advances, 2020, 10 (7), pp.075027. ⟨10.1063/5.0011780⟩
Article dans une revue
hal-03015743v1
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Narrow linewidth tunable THz signal radiated by 1.55 µm photomixingSPIE Optics + Photonics, Terahertz Emitters, Receivers, and Applications III, 2012, San Diego, CA, United States. pp.84960C-1-7, ⟨10.1117/12.929738⟩
Communication dans un congrès
hal-00803097v1
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