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In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation
Wadia Jouha
,
Ahmed El Oualkadi
,
Pascal Dherbécourt
,
Mohamed Lamine Masmoudi
,
Joubert Eric
Article dans une revue
hal-04355283v1
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Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics
Wadia Jouha
,
Mohamed Lamine Masmoudi
,
Ahmed El Oualkadi
,
Eric Joubert
,
Pascal Dherbécourt
Article dans une revue
hal-03174373v1
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Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests
S. Mbarek
,
F. Fouquet
,
Pascal Dherbécourt
,
Mohamed Lamine Masmoudi
,
O. Latry
Article dans une revue
hal-01954256v1
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An athermal measurement technique for long traps characterization in GaN HEMT transistors.
A Divay
,
Mohamed Lamine Masmoudi
,
Olivier Latry
,
C Duperrier
,
Farid Temcamani
Article dans une revue
hal-01341768v1
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A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications
O. Latry
,
Pascal Dherbécourt
,
K. Mourgues
,
H. Maanane
,
P. Sipma
,
et al.
Article dans une revue
hal-02267399v1
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RELIABILITY STUDY OF POWER RF LDMOS DEVICES UNDER THERMAL STRESS
M.A Belaïd
,
K. Ketata
,
K. Mourgues
,
M. Gares
,
M. Masmoudi
,
et al.
THERMINIC 2005, Sep 2005, Belgirate, Lago Maggiore, Italy. pp.38-42
Communication dans un congrès
hal-00189450v1
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Reliability and Qualification Tests for High-Power MOSFET Transistors
Niemat Moultif
,
Mohamed Lamine Masmoudi
,
Eric Joubert
,
O. Latry
Chapitre d'ouvrage
hal-01927246v1
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A new extraction method of SiC power MOSFET threshold voltage using a physical approach
Wadia Jouha
,
Ahmed El Oualkadi
,
Pascal Dherbécourt
,
Eric Joubert
,
Mohamed Lamine Masmoudi
Communication dans un congrès
hal-02177925v1
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An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors
Alexis Divay
,
Mohamed Lamine Masmoudi
,
Olivier Latry
,
Cédric Duperrier
,
Farid Temcamani
ESREF 2015, Oct 2015, Toulouse, France
Communication dans un congrès
hal-01230925v1
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Study of different algorithms and models for trapping effect extraction
Alexis Divay
,
Mohamed Lamine Masmoudi
,
O. Latry
,
Cédric Duperrier
,
Farid Temcamani
,
et al.
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), May 2016, Krakow, France. ⟨10.1109/MIKON.2016.7491990⟩
Communication dans un congrès
hal-01740879v1
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Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm
Wadia Jouha
,
Ahmed El Oualkadi
,
Pascal Dherbécourt
,
Eric Joubert
,
Mohamed Lamine Masmoudi
Article dans une revue
hal-02177905v1
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Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures
Niemat Moultif
,
Eric Joubert
,
Mohamed Lamine Masmoudi
,
O. Latry
Communication dans un congrès
hal-01765953v1
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On Quantization of Quadratic Poisson Structures
D. Manchon
,
M. Masmoudi
,
A. Roux
Article dans une revue
hal-03045221v1
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RF performance reliability of power N‐LDMOS under pulsed‐RF aging life test in radar application S‐band
Mohamed Ali Belaïd
,
Ahmed Almusallam
,
Mohamed Lamine Masmoudi
Article dans une revue
hal-04355267v1
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An Extraction Method of SiC Power MOSFET Threshold Voltage
Ahmed Eloualkaki
,
Pascal Dherbécourt
,
Eric Joubert
,
Mohamed Lamine Masmoudi
,
Wadia Jouha
Communication dans un congrès
hal-02295944v1
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An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET
Wadia Jouha
,
Pascal Dherbécourt
,
Ahmed El Oualkadi
,
Eric Joubert
,
Mohamed Lamine Masmoudi
Article dans une revue
hal-02295925v1
|
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Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures
Niemat Moultif
,
Eric Joubert
,
Mohamed Lamine Masmoudi
,
O. Latry
Article dans une revue
hal-01765955v1
|
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Genetic insights into recolonization processes of Mediterranean octocorals
D. Aurelle
,
J. Tariel
,
F. Zuberer
,
A. Haguenauer
,
C. Ribout
,
et al.
Article dans une revue
hal-02569518v1
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