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In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

 Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Mohamed Lamine Masmoudi , Joubert Eric
IET Circuits, Devices & Systems, 2020, 14 (2), pp.222-228. ⟨10.1049/iet-cds.2018.5509⟩
Article dans une revue hal-04355283v1

Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

 Wadia Jouha , Mohamed Lamine Masmoudi , Ahmed El Oualkadi , Eric Joubert , Pascal Dherbécourt
IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩
Article dans une revue hal-03174373v1

Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests

 S. Mbarek , F. Fouquet , Pascal Dherbécourt , Mohamed Lamine Masmoudi , O. Latry
Microelectronics Reliability, 2016, 64, pp.415-418. ⟨10.1016/j.microrel.2016.07.132⟩
Article dans une revue hal-01954256v1
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An athermal measurement technique for long traps characterization in GaN HEMT transistors.

 A Divay , Mohamed Lamine Masmoudi , Olivier Latry , C Duperrier , Farid Temcamani
Microelectronics Reliability, 2015, 55, pp.1703-1707. ⟨10.1016/j.microrel.2015.06.074⟩
Article dans une revue hal-01341768v1

A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications

 O. Latry , Pascal Dherbécourt , K. Mourgues , H. Maanane , P. Sipma , et al.
Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
Article dans une revue hal-02267399v1
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RELIABILITY STUDY OF POWER RF LDMOS DEVICES UNDER THERMAL STRESS

 M.A Belaïd , K. Ketata , K. Mourgues , M. Gares , M. Masmoudi , et al.
THERMINIC 2005, Sep 2005, Belgirate, Lago Maggiore, Italy. pp.38-42
Communication dans un congrès hal-00189450v1

Reliability and Qualification Tests for High-Power MOSFET Transistors

 Niemat Moultif , Mohamed Lamine Masmoudi , Eric Joubert , O. Latry
Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩
Chapitre d'ouvrage hal-01927246v1

A new extraction method of SiC power MOSFET threshold voltage using a physical approach

 Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi
2017 International Conference on Electrical and Information Technologies (ICEIT), Nov 2017, Rabat, France. pp.1-6, ⟨10.1109/EITech.2017.8255289⟩
Communication dans un congrès hal-02177925v1
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An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors

 Alexis Divay , Mohamed Lamine Masmoudi , Olivier Latry , Cédric Duperrier , Farid Temcamani
ESREF 2015, Oct 2015, Toulouse, France
Communication dans un congrès hal-01230925v1

Study of different algorithms and models for trapping effect extraction

 Alexis Divay , Mohamed Lamine Masmoudi , O. Latry , Cédric Duperrier , Farid Temcamani , et al.
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), May 2016, Krakow, France. ⟨10.1109/MIKON.2016.7491990⟩
Communication dans un congrès hal-01740879v1

Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

 Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi
IEEE Transactions on Power Electronics, 2018, 33 (11), pp.9130-9133. ⟨10.1109/TPEL.2018.2822939⟩
Article dans une revue hal-02177905v1

Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures

 Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry
2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩
Communication dans un congrès hal-01765953v1

On Quantization of Quadratic Poisson Structures

 D. Manchon , M. Masmoudi , A. Roux
Communications in Mathematical Physics, 2002, 225 (1), pp.121-130. ⟨10.1007/s002201000575⟩
Article dans une revue hal-03045221v1

RF performance reliability of power N‐LDMOS under pulsed‐RF aging life test in radar application S‐band

 Mohamed Ali Belaïd , Ahmed Almusallam , Mohamed Lamine Masmoudi
IET Circuits, Devices & Systems, 2020, 14 (6), pp.805-810. ⟨10.1049/iet-cds.2019.0552⟩
Article dans une revue hal-04355267v1

An Extraction Method of SiC Power MOSFET Threshold Voltage

 Ahmed Eloualkaki , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi , Wadia Jouha
3rd International Conference on Electrical and Information Technologies, Nov 2017, Rabat, Morocco. ⟨10.1007/978-3-030-05276-8_2⟩
Communication dans un congrès hal-02295944v1

An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET

 Wadia Jouha , Pascal Dherbécourt , Ahmed El Oualkadi , Eric Joubert , Mohamed Lamine Masmoudi
International Journal of Information Science & Technology, 2019, ⟨10.57675/IMIST.PRSM/ijist-v3i1.44⟩
Article dans une revue hal-02295925v1

Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures

 Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry
Microelectronics Reliability, 2017, 76-77, pp.243 - 248. ⟨10.1016/j.microrel.2017.07.013⟩
Article dans une revue hal-01765955v1
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Genetic insights into recolonization processes of Mediterranean octocorals

 D. Aurelle , J. Tariel , F. Zuberer , A. Haguenauer , C. Ribout , et al.
Marine Biology, 2020, 167 (6), pp.73. ⟨10.1007/s00227-020-03684-z⟩
Article dans une revue hal-02569518v1
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