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Mohamed Boutchich
Dr Boutchich Mohamed
Associate Professor in Electrical Engineering
Sorbonne University
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Documents
Affiliations actuelles
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Domaines de recherche
Publications
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Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurementsEnergy Procedia, 2017, 124, pp.10 - 17. ⟨10.1016/j.egypro.2017.09.331⟩
Article dans une revue
hal-01631793v1
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Temperature dependence of the radiative recombination coefficient in crystalline silicon by spectral and modulated photoluminescencephysica status solidi (RRL) - Rapid Research Letters, 2017, 11 (6), ⟨10.1002/pssr.201700066⟩
Article dans une revue
hal-01631792v1
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Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany
Communication dans un congrès
hal-01239190v1
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